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  • 101.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigány, Zs
    Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, Hungary.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    The Influence of Inert Gases on the a-C and CNx Thin Film Deposition: A Comparison between DCMS and HiPIMS ProcessesManuscript (preprint) (Other academic)
    Abstract [en]

    DCMS and HiPIMS discharges of C in Ne, Ar, and Kr as well as their reactive counterparts (N2/Ne, N2/Ar, and N2/Kr) were investigated for the growth of carbon and carbon-nitride (CNx) thin films. The thin films were synthesized in an industrial deposition chamber from a pure graphite target. Time averaged plasma mass spectroscopy showed that the energies of the most abundant plasma cations depend on the inert gas and the amount of N2 in the sputter gas rather than the sputter modes. The ion species population in the plasma, on the other hand, was found to depend heavily on the sputter mode; HiPIMS processes yield approximately ten times higher flux ratios of ions originating from the target to ions originating from the process gas. Exceptional cases are the discharges in Ne or N2/Ne mixtures containing up to 20% N2. Here, no influence of the sputter mode on cation energies and population was found. CNx and a-C thin films deposited in 14% N2/inert gas mixture and pure inert gas, respectively, were characterized regarding the chemical composition, chemical bonding and microstructure as well as their mechanical properties using elastic recoil detection analysis, X-ray photoelectron spectroscopy, transmission electron microscopy in combination with selected area electron diffraction, and nanoindentation, respectively. The thin film characteristics showed strong correlations to the energies of abundant plasma cations (namely C+, Ar+, Ar++, Ne+,22Ne+, Ne++, 82Kr+, 84Kr+, 86Kr+, Kr++, N+, N2+, CN+ as well as C2N2+)and cation population of the corresponding deposition process. High amounts of C bond in sp3 hybridization state were found for thin films sputtered in Ne, accounting for their elevated hardness and amorphous microstructure. With increasing inert gas atomic number the a-C and CNx thin films show an increasingly distinct near range ordered microstructural evolution. This effect is more pronounced for HiPIMS processes and accompanied by a lowered hardness, but elevated elastic properties.

  • 102.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Goyenola, Cecilia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev, Gueorgui Kostov
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev Ivanov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Czigany, Zs
    Hungarian Academic Science, Hungary .
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Reactive high power impulse magnetron sputtering of CFx thin films in mixed Ar/C4F4 and Ar/C4F8 discharges2013In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 542, p. 21-30Article in journal (Refereed)
    Abstract [en]

    The reactive high power impulse magnetron sputtering processes of carbon in argon/tetrafluoromethane (CF4) and argon/octafluorocyclobutane (c-C4F8) have been characterized. Amorphous carbon fluoride (CFx) films were synthesized at deposition pressure and substrate temperature of 400 mPa and 110 degrees C, respectively. The CFx film composition was controlled in the range of 0.15 andlt; x andlt; 0.35 by varying the partial pressure of the F-containing gases from 0 mPa to 110 mPa. The reactive plasma was studied employing time averaged positive ion mass spectrometry and the resulting thin films were characterized regarding their composition, chemical bonding and microstructure as well as mechanical properties by elastic recoil detection analysis, X-ray photoelectron spectroscopy, transmission electron microscopy, nanoindentation, and water droplet contact angle measurements, respectively. The experimental results were compared to results obtained by first-principles calculations based on density functional theory. The modeling of the most abundant precursor fragment from the dissociation of CF4 and C4F8 provided their relative stability, abundance, and reactivity, thus permitting to evaluate the role of each precursor during film growth. Positive ion mass spectrometry of both fluorine plasmas shows an abundance of CF+, C+, CF2+, and CF3+ (in this order) as corroborated by first-principles calculations. Only CF3+ exceeded the Ar+ signal in a CF4 plasma. Two deposition regimes are found depending on the partial pressure of the fluorine-containing reactive gas, where films with fluorine contents below 24 at.% exhibit a graphitic nature, whereas a polymeric structure applies to films with fluorine contents exceeding 27 at.%. Moreover, abundant precursors in the plasma are correlated to the mechanical response of the different CFx thin films. The decreasing hardness with increasing fluorine content can be attributed to the abundance of CF3+ precursor species, weakening the carbon matrix.

  • 103.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Goyenola, Cecilia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev, Gueorgui Kostov
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Ivanov, Ivan Gueorguiev
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Czigány, Zs
    Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, Hungary.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Reactive High Power Impulse Magnetron Sputtering of CFx Thin Films in Mixed Ar/CF4 and Ar/C4F8 DischargesManuscript (preprint) (Other academic)
    Abstract [en]

    The reactive high power impulse magnetron sputtering (HiPIMS) processes of C in Ar/tetrafluoromethane CF4 and Ar/octafluorocyclobutane (c-C4F8) have been characterized. Amorphous carbon fluoride (CFx) films were synthesized at deposition pressure and substrate temperature of 400 mPa and 110 oC, respectively. The CFx film composition was controlled in the range of 0.15 < x < 0.35 by varying the partial pressure of the F-containing gases from 0 mPa to 110 mPa. The reactive plasma was studied employing time averaged positive ion mass spectrometry and the resulting thin films were characterized regarding their composition, chemical bonding and microstructure as well as mechanical properties by elastic recoil detection analysis, X-ray photoelectron spectroscopy, transmission electron microscopy, nanoindentation, and water droplet contact angle measurements, respectively. The experimental results were compared to results obtained by first-principles calculations based on density functional theory.

    The modeling of the most abundant precursor fragment from the dissociation of CF4 and C4F8 provided their relative stability, abundance, and reactivity, thus permitting to evaluate the role of each precursor during film growth. Positive ion mass spectrometry of both F plasmas show an abundance of CF+, C+, CF⁺₂, and CF⁺₃ (in this order) as corroborated by first-principles calculations. Only CF⁺₃ exceeded the Ar+ signal in a CF4 plasma. Two deposition regimes are found depending on the partial pressure of the F-containing reactive gas, where films with fluorine contents below 24 at% exhibit a graphitic nature, whereas a polymeric structure applies to films with fluorine contents exceeding 27 at%. Moreover, abundant precursors in the plasma are correlated to the mechanical response of the different CFx thin films. The decreasing hardness with increasing F content can be attributed to the abundance of CF⁺₃ precursor species, weakening the C matrix.

  • 104.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Goyenola, Cecilia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Kostov Gueorguiev, Gueorgui
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigany, Zs
    Hungarian Academic Science.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev Ivanov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    CF(x) thin solid films deposited by high power impulse magnetron sputtering: Synthesis and characterization2011In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 4, p. 646-653Article in journal (Refereed)
    Abstract [en]

    Fluorine containing amorphous carbon films (CF(x), 0.16 andlt;= x andlt;= 0.35) have been synthesized by reactive high power impulse magnetron sputtering (HiPIMS) in an Ar/CF(4) atmosphere. The fluorine content of the films was controlled by varying the CF(4) partial pressure from 0 mPa to 110 mPa at a constant deposition pressure of 400 mPa and a substrate temperature of 110 degrees C. The films were characterized regarding their composition, chemical bonding and microstructure as well as mechanical properties by applying elastic recoil detection analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and nanoindentation. First-principles calculations were carried out to predict and explain F-containing carbon thin film synthesis and properties. By geometry optimizations and cohesive energy calculations the relative stability of precursor species including C(2), F(2) and radicals, resulting from dissociation of CF4, were established. Furthermore, structural defects, arising from the incorporation of F atoms in a graphene-like network, were evaluated. All as-deposited CF(x) films are amorphous. Results from X-ray photoelectron spectroscopy and Raman spectroscopy indicate a graphitic nature of CF(x) films with x andlt;= 0.23 and a polymeric structure for films with x andgt;= 0.26. Nanoindentation reveals hardnesses between similar to 1 GPa and similar to 16 GPa and an elastic recovery of up to 98%.

  • 105.
    Surpi, A.
    et al.
    Division for Surface and Interface Science, Department of Physics and Astronomy, Uppsala University.
    Göthelid, E.
    Division for Surface and Interface Science, Department of Physics and Astronomy, Uppsala University.
    Kubart, T.
    Solid State Electronics, Department of Engineering Sciences, Uppsala University.
    Martin, D.
    Solid State Electronics, Department of Engineering Sciences, Uppsala University.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Localised modifications of anatase TiO2 thin films by a Focused Ion Beam2010In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 268, p. 3142-3146Article in journal (Refereed)
    Abstract [en]

    A Focused Ion Beam (FIB) has been used to implant micrometer-sized areas of polycrystalline anataseTiO2 thin films with Ga+ ions using fluencies from 1015 to 1017 ions/cm2. The evolution of the surface morphologywas studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, the chemical modifications of the surface were followed by X-ray photoelectron spectroscopy (XPS). The implanted areas show a noticeable change in surface morphology as compared to the as-deposited surface. The surface loses its grainy morphology to gradually become a smooth surface with a RMS roughness of less than 1 nm for the highest ion fluence used. The surface recession or depth of the irradiated area increases with ion fluence, but the rate with which the depth increases changes at around5x1016 ions/cm2. Comparison with implantation of a pre-irradiated surface indicates that the initial surface morphology may have a large effect on the surface recession rate. Detailed analysis of the XPS spectra shows that the oxidation state of Ti and O apparently does not change, whereas the implanted gallium exists in an oxidation state related to Ga2O3.

  • 106.
    Sønderby, Steffen
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Nielsen, A. J.
    Danish Technology Institute, Denmark Aarhus University, Denmark Aarhus University, Denmark .
    Christensen, B. H.
    Danish Technology Institute, Denmark .
    Almtoft, K. P.
    Danish Technology Institute, Denmark .
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nielsen, L. P.
    Danish Technology Institute, Denmark .
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Reactive magnetron sputtering of uniform yttria-stabilized zirconia coatings in an industrial setup2012In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 19-20, p. 4126-4131Article in journal (Refereed)
    Abstract [en]

    Yttria-stabilized zirconia (YSZ) thin films were deposited by reactive magnetron sputtering in an industrial scale setup on silicon wafers as well as commercial NiO-YSZ fuel cell anodes. The texture, morphology, and composition of the deposited films were investigated as a function of deposition parameters. Homogeneous coatings could be deposited over large areas within the coating zone, which is important for industrial applications. The use of substrate bias during film growth was identified as a key parameter to promote less columnar coatings and made it possible to tailor the texture of films deposited on Si. Bias voltages less than= - 40V resulted in highly less than 200 greater than textured YSZ films, intermediate bias voltages of - 50 V to - 70 V in less than 220 greater than textured films and high bias voltages (greater than= - 90 V) in a mixed orientation. In contrast, films grown on NiO-YSZ were seen to be randomly orientated when deposited at substrate bias voltages less than= - 30 V. When bias was further increased the film took over the orientation of underlying substrate due to substrate template effects.

  • 107.
    Tengdelius, Lina
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Samuelsson, Mattias
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)2014In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 550, p. 285-290Article in journal (Other academic)
    Abstract [en]

    ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (-20 V to -80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~95 to 200 μΩcm, decreasing with increased growth temperature and substrate bias.

  • 108.
    Tholander, Christopher
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Tasnádi, Ferenc
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Alling, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany.
    Zukauskaitè, Agne
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany.
    Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy2016In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 105, p. 199-206Article in journal (Refereed)
    Abstract [en]

    By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (YxIn1-xN). Ab initio calculations show that the YxIn1-xN wurtzite phase is lowest in energy among relevant alloy structures for 0≤x≤0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown YxIn1-xN films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1−xN to have comparable piezoelectric properties to ScxAl1-xN.

  • 109.
    Vicente Perez-Giron, J.
    et al.
    Nanoate SL, Spain; Heinrich Pette Institute, Germany.
    Hirtz, M.
    KIT, Germany; KIT, Germany.
    McAtamney, C.
    Trinity Coll Dublin, Ireland.
    Bell, A. P.
    Trinity Coll Dublin, Ireland.
    Antonio Mas, J.
    University of Rey Juan Carlos, Spain.
    Jaafar, M.
    Nanoate SL, Spain; University of Autonoma Madrid, Spain.
    de Luis, O.
    Nanoate SL, Spain; University of Rey Juan Carlos, Spain.
    Fuchs, H.
    KIT, Germany; KIT, Germany; University of Munster, Germany; University of Munster, Germany.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sanz, R.
    Nanoate SL, Spain; CNR IMM MATIS, Italy.
    Selective binding of oligonucleotide on TiO2 surfaces modified by swift heavy ion beam lithography2014In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 339, p. 67-74Article in journal (Refereed)
    Abstract [en]

    We have used swift heavy-ion beam based lithography to create patterned bio-functional surfaces on rutile TiO2 single crystals. The applied lithography method generates a permanent and well defined periodic structure of micrometre sized square holes having nanostructured TiO2 surfaces, presenting different physical and chemical properties compared to the surrounding rutile single crystal surface. On the patterned substrates selective binding of oligonucleotides molecules is possible at the surfaces of the holes. This immobilisation process is only being controlled by UV light exposure. The patterned transparent substrates are compatible with fluorescence detection techniques, are mechanically robust, have a high tolerance to extreme chemical and temperature environments, and apparently do not degrade after ten cycles of use. These qualities make the patterned TiO2 substrates useful for potential biosensor applications.

  • 110.
    Vockenhuber, Christof
    et al.
    ETH, Switzerland.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Julin, Jaakko
    University of Jyvaskyla, Finland.
    Kettunen, Heikki
    University of Jyvaskyla, Finland.
    Laitinen, Mikko
    University of Jyvaskyla, Finland.
    Rossi, Mikko
    University of Jyvaskyla, Finland.
    Sajavaara, Timo
    University of Jyvaskyla, Finland.
    Osmani, Orkhan
    Donostia Int Phys Centre, Spain.
    Schinner, Andreas
    Johannes Kepler University of Linz, Austria.
    Sigmund, Peter
    University of So Denmark, Denmark.
    J Whitlow, Harry
    University of Jyvaskyla, Finland.
    Energy-loss straggling of 2–10 MeV/u Kr ions in gases2013In: European Physical Journal D: Atomic, Molecular and Optical Physics, ISSN 1434-6060, E-ISSN 1434-6079, Vol. 67, no 7Article in journal (Refereed)
    Abstract [en]

    Measurements have been performed on a time-of-flight setup at the Jyväskylä K130 cyclotron, aiming at energy-loss straggling of heavy ions in gases. Theoretical predictions based on recently developed theory as well as an empirical interpolation formula predict that straggling can be more than ten times higher than Bohr straggling in the MeV/u regime. Our measurements with up to 9.3 MeV/u Kr ions on He, N2, Ne and Kr targets confirm this feature. Our calculations show the relative contributions of linear straggling, bunching including packing, and charge exchange. Our results for stopping cross sections are compatible with values from the literature.

  • 111.
    Zettergren, H
    et al.
    Stockholm University.
    Johansson, H A B
    Stockholm University.
    Schmidt, H T
    Stockholm University.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hvelplund, P
    Aarhus University.
    Tomita, S
    University of Tsukuba.
    Wang, Y
    University Autonoma Madrid.
    Martin, F
    University Autonoma Madrid.
    Alcami, M
    University Autonoma Madrid.
    Manil, B
    University of Paris 13.
    Maunoury, L
    Centre Rech Ions Mat and Photon CIMAP.
    Huber, B A
    Centre Rech Ions Mat and Photon CIMAP.
    Cederquist, H
    Stockholm University.
    Magic and hot giant fullerenes formed inside ion irradiated weakly bound C-60 clusters2010In: JOURNAL OF CHEMICAL PHYSICS, ISSN 0021-9606, Vol. 133, no 10, p. 104301-Article in journal (Refereed)
    Abstract [en]

    We find that the most stable fullerene isomers, C-70-C-94, form efficiently in close-to central collisions between keV atomic ions and weakly bound clusters of more than 15 C-60-molecules. We observe extraordinarily high yields of C-70 and marked preferences for C-78 and C-84. Larger even-size carbon molecules, C-96-C-180, follow a smooth log-normal (statistical) intensity distribution. Measurements of kinetic energies indicate that C-70-C-94 mainly are formed by coalescence reactions between small carbon molecules and Coo, while C-n with n andgt;= 96 are due to self-assembly (of small molecules) and shrinking hot giant fullerenes.

  • 112.
    Zhu, Jianqiang
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Johansson Jöesaar, Mats P.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology. Seco Tools, Fagersta, Sweden.
    Polcik, Peter
    PLANSEE Composite Materials GmbH.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Influence of Ti-Si cathode grain size on the cathodic arc process and resulting Ti-Si-N coatings2013In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 235, no 25, p. 637-647Article in journal (Refereed)
    Abstract [en]

    The influence of the Ti-Si cathode grain size on cathodic arc processes and resulting Ti-Si-N coating synthesis has been studied. 63 mm Ti-Si cathodes containing 20-25 at % Si with four dedicated grain size of ~8 µm, ~20 µm, ~110 µm, and ~600 µm were fabricated via spark plasma sintering or hot isostatic pressing. They were evaporated in 2 Pa nitrogen atmosphere in an industrial-scale arc deposition system and the Ti-Si-N coatings were grown at 50 A, 70 A, and 90 A arc current. The composition and microstructure of the virgin and worn cathode surfaces as well as the resulting coatings were characterized using optical and electron microscopy, x-ray diffraction, elastic recoil detection analysis, x-ray photoelectron spectroscopy, and nanoindentation. The results show that the existence of multiple phases with different work function values directly influences the cathode spot ignition behavior and also the arc movement and appearance. Specifically, there is a preferential erosion of the Ti5Si3-phase grains. By increasing the grain size of the virgin cathode, the preferential erosion is enhanced, such that the cathode surface morphology roughens substantially after 600 Ah arc discharging. The deposition rate of the Ti-Si-N coating is increased with decreasing grain size of the evaporated Ti-Si cathodes. The composition, droplet density, and droplet shape of the coatings are influenced by the arc movement, which is also shown to depend on the cathode grain size.

  • 113.
    Žukauskaitė, Agnė
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Wingqvist, Gunilla
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Pališaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Matloub, Ramin
    Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, SwitzerlandNational Laboratory, Oak Ridge, TN 37831, United States.
    Muralt, Paul
    Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland.
    Kim, Yunseok
    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN thin films2012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 9, p. 093527-Article in journal (Refereed)
    Abstract [en]

    Piezoelectric wurtzite ScxAl1-xN (x=0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 °C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 °C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x≥0.2 when substrate temperature is increased from 400 to 800 °C. The piezoelectric response of epitaxial ScxAl1-xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x=0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

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