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  • 201.
    Wahab, Qamar Ul
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ellson, A.
    Zhang, J.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Duranova, E.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Madsen, L.D.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Power Schottky rectifiers and microwave transistors in 4H-SiC2000In: Proc. of the International Workshop on Semiconductor Devices, 2000, p. 668-671Conference paper (Refereed)
    Abstract [en]

    The physical simulation, fabrication and characterization of 4H-SiC power Schottky diodes and physical simulations of power microwave transistors an presented. A record blocking voltage of 3.85 kV was achieved for a Schottky diode with a 43 μm thick epilayer grown by chimney CVD. For hot-wall CVD grown layers a blocking voltage of 3.6 kV was obtained. Simulations of power MESFETs showed maximum drain currents above 300 mA/mm and a drain breakdown above 150 volt An RF analysis showed the cut-off and the maximum frequency of oscillation for a device with a gate length of 0.5 μm to be 13 and 45 GHz respectively. The maximum achievable gain was above 10 dB ep to 26 GFz.

  • 202.
    Yakimova, Rositsa
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Rendakova, S
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden TDI Inc, Gaithersburg, MD 20877 USA Howard Univ, MSRCE, Washington, DC 20059 USA.
    Dimitriev, VA
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden TDI Inc, Gaithersburg, MD 20877 USA Howard Univ, MSRCE, Washington, DC 20059 USA.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Micropipe healing in liquid phase epitaxial growth of SiC2000In: Materials Science Forum, Vols. 338-342, Trans Tech Publications Inc., 2000, Vol. 338-3, p. 237-240Conference paper (Refereed)
    Abstract [en]

    In this study we demonstrate the feasibility of micropipe reduction in SiC commercial wafers by using liquid phase epitaxial (LPE) growth. We have studied the stability of the micropipe healing by performing hot KOH etching and growing thick (40-50 mum) layer with sublimation epitaxy at temperature higher than that used for the LPE growth. Experimental evidences have been collected by means of different techniques and a phenomenological model for micropipe healing is proposed.

  • 203.
    Yazdanfar, Milan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Leone, Stefano
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Pedersen, Henrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Kordina, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Carrot defect control in chloride-based CVD through optimized ramp up conditions2012In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, p. 109-112Conference paper (Refereed)
    Abstract [en]

    Epitaxial growth of 4H-SiC on 8 degrees off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H-2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 degrees C during the ramp up to growth temperature (1575 degrees C).

  • 204.
    Yu, Byoung-Soo
    et al.
    Kwangwoon University, South Korea.
    Jeon, Jun-Young
    Kwangwoon University, South Korea.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Ha, Tae-Jun
    Kwangwoon University, South Korea.
    Characteristics of Low-Temperature Solution-Processed Boron Nitride Thin Films for Flexible Nanoelectronics2017In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 17, no 11, p. 8567-8570Article in journal (Refereed)
    Abstract [en]

    In this study, we demonstrate the characteristics of high quality boron nitride (BN) thin films for high performance 2 dimensional nanoelectronics. Such thin films were deposited using solution-process technology such as spin-coating, spraying and aerosol deposition at low temperature of 100 degrees C. The material properties of these BN thin films with optimized fabrication processes are competitive with those of BN deposited by employing the vacuum chemical vapor deposition technique. In order to characterize the material properties of solution-processed BN thin films, various measurements including atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were performed. The optimized solution-process based on BN thin films are practical and reproducible in achieving high performance flexible nanoelectronics which require low process temperature and good uniformity in large-area.

  • 205. Zhang, J
    et al.
    Ellison, A
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-58330 Linkoping, Sweden.
    Danielsson, O
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Epitaxial growth of 4H-SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations2001In: Materials Science Forum, Vols. 353-356, Trans Tech Publications , 2001, Vol. 353-3, p. 91-94Conference paper (Refereed)
    Abstract [en]

    The effect of reactor orientation on the CVD growth of JH SIC is investigated. Compared with the up-flow orientation (the chimney reactor), the down-flow orientation (the inverted chimney) shows similar growth rate dependencies on C/Si ratio and pressure. The activation energy of the growth rate in the inverted chimney is Lower than that in the chimney. The inverted chimney also produces epilayers with high growth rates (10 - 30 mum/h) and low residual doping (low 10(16) down to mid 10(13) cm(-3)). The epilayer morphology is comparable with that of the chimney samples. A qualitative analysis is performed on the heat transfer mechanisms in these two reactor orientations in terms of dimensionless flow numbers.

  • 206. Zhang, J.
    et al.
    Forsberg, Urban
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Isacson, M.
    Ellison, A.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Kordina, O.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Growth characteristics of SiC in a hot-wall CVD reactor with rotation2002In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 241, no 4, p. 431-438Article in journal (Refereed)
    Abstract [en]

    A version of the hot-wall reactor, where rotation has been added is investigated for the growth of SiC. The capacity of the reactor is 2 in wafers. The rotation is realized by gas foil levitation of a single plate carrying all three wafers. Uniformities of thickness and doping below 1% and 5%, respectively have been obtained. The run to run reproducibility of n-type doping is within ±10%. The morphology is studied and greatly improved through a modification of the hot-zone, which however made the thickness uniformity marginally worse. © 2002 Published by Elsevier Science B.V.

  • 207. Zhang, J
    et al.
    Forsberg, Urban
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Isacson, M
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
    Ellison, A
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Kordina, Olle
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmetic AB, SE-58330 Linkoping, Sweden.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Growth characteristics of SiC in a hot-wall CVD reactor with rotation2002In: Materials Science Forum(ISSN 0255-5476) Volume 389-3, 2002, Vol. 389-3, p. 191-194Conference paper (Refereed)
    Abstract [en]

    SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone.

  • 208.
    Zhang, Jie
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Ellison, Alexandre
    Okmetic AB, Linköping, Sweden.
    Danielsson, Örjan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Linnarsson, M. K.
    Royal Institute of Technology ( KTH), Stockholm, Sweden.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations2002In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 241, no 4, p. 421-430Article in journal (Refereed)
    Abstract [en]

    The CVD growth of 4H SiC is investigated in a vertical hot-wall reactor in both up-flow (the chimney reactor) and down-flow (the inverted chimney) orientations. The growth rate and the nitrogen doping are studied for comparison. Under the investigated process conditions the growth mechanism is shown to be similar in these two reactor orientations. Only slight difference is observed in the temperature effect depending on the flow direction. Both reactor types have produced epilayers with high growth rates (10–35 μm/h) and low residual n-type doping (low 1016 down to mid 1013 cm−3) with comparable morphology. Dimensionless flow numbers are used to provide a qualitative analysis of the flow and heat transfer mechanisms in the vertical hot-wall system. Two-dimensional numerical simulation in a cylindrical geometry is conducted to demonstrate the flow and temperature profile with selected process parameters. Comparison of the experimental results in the chimney and the inverted chimney is performed to give insight into the fast epitaxial hot-wall growth.

  • 209.
    Zimmermann, U
    et al.
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Osterman, J
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Zhang, J
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Hallen, A
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers2002In: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, p. 1285-1288Conference paper (Refereed)
    Abstract [en]

    High-temperature chemical vapour deposition (HTCVD) in a vertical chimney reactor was used to grow thick low-doped epitaxial layers of 4H silicon carbide. These layers were used as drift layers in a combined process to manufacture both bipolar and unipolar high-voltage diodes. The resulting diodes were characterized electrically in order to gain knowledge about the electric quality of the HTCVD epitaxial layers to assess the high-voltage properties of this material.

  • 210.
    Ščajev, Patrik
    et al.
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Hassan, Jawad
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Jarašiūnas, Kęstutis
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Kato, Masashi
    Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Japan.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Bergman, J Peder
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates2011In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 40, no 4, p. 394-399Article in journal (Refereed)
    Abstract [en]

    Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, tau, and mobility, mu, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of tau(T) and mu (a)(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being similar to 4 times longer than that in free-standing 3C.

2345 201 - 210 of 210
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