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  • 2051.
    Zhou, Mi
    et al.
    University of N Texas.
    Pasquale, Frank L
    University of N Texas.
    Dowben, Peter A
    University of Nebraska Lincoln.
    Boosalis, Alex
    University of Nebraska Lincoln.
    Schubert, Mathias
    University of Nebraska Lincoln.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Kong, Lingmei
    University of Nebraska Lincoln.
    Kelber, Jeffry A
    University of N Texas.
    Direct graphene growth on Co3O4(111) by molecular beam epitaxy2012Inngår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 24, nr 7, s. 072201-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Direct growth of graphene on Co3O4(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp2 carbon film with a lattice constant of 2.5(+/-0.1) angstrom characteristic of graphene. Sixfold symmetry of the graphene diffraction spots is observed at 0.4, 1 and 3 ML. The LEED data also indicate an average domain size of similar to 1800 angstrom, and show an incommensurate interface with the Co3O4(111) substrate, where the latter exhibits a lattice constant of 2.8(+/-0.1) angstrom. Core level photoemission shows a characteristically asymmetric C(1s) feature, with the expected pi to pi* satellite feature, but with a binding energy for the 3 ML film of 284.9(+/-0.1) eV, indicative of substantial graphene-to-oxide charge transfer. Spectroscopic ellipsometry data demonstrate broad similarity with graphene samples physically transferred to SiO2 or grown on SiC substrates, but with the pi to pi* absorption blue-shifted, consistent with charge transfer to the substrate. The ability to grow graphene directly on magnetically and electrically polarizable substrates opens new opportunities for industrial scale development of charge- and spin-based devices.

  • 2052.
    Zhou, Shuai
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. Beijing University of Posts and Telecommun, Peoples R China; China International Telecommunication Construction Group Design Institute Co., Ltd, Beijing, Peoples R China.
    Liu, Yumin
    Beijing University of Posts and Telecommun, Peoples R China.
    Wang, Donglin
    Beijing University of Posts and Telecommun, Peoples R China.
    Yu, Zhongyuan
    Beijing University of Posts and Telecommun, Peoples R China.
    Zhao, Wei
    China Int Telecommun Construct Grp Design Institute Co, Peoples R China.
    Le, Lifeng
    China Int Telecommun Construct Grp Design Institute Co, Peoples R China.
    Holtz, Per-Olof
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    The calculation of InGaN quantum dot formation mechanism on GaN pyramid2015Inngår i: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 84, s. 72-79Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.

  • 2053. Zhu, Q.
    et al.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Byszewski, M.
    Rudra, A.
    Pelucchi, E.
    He, Z.
    Kapon, E.
    Hybridization of electron and hole states in pyramidal quantum dot molecules2008Inngår i: The 5th International Conerence on Semiconductor Quantum Dots QD2008,2008, 2008Konferansepaper (Annet vitenskapelig)
  • 2054. Zhu, Q.
    et al.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Rudra, A.
    Pelucchi, E.
    Byszewski, M.
    Gallo, P.
    Kapon, E.
    Control of Light Polarization using Semiconductor Quantum Dot Molecules2007Inngår i: OSA topical Conference in Nanophotonics,2007, 2007Konferansepaper (Annet vitenskapelig)
  • 2055. Zhu, Q.
    et al.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Rudra, A.
    Pelucchi, E.
    Byszewski, M.
    Gallo, P.
    Kapon, E.
    Quantum Dot Molecules and Superlattices Realized with Modulated Quantum Wire Heterostructures2007Inngår i: 13th International Conference Modulated Semiconductor Structures MSS 13,2007, 2007Konferansepaper (Annet vitenskapelig)
  • 2056. Zhu, Q.
    et al.
    Pelucchi, E.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Dalessi, S.
    Dupertuis, M.-A.
    Kapon, E.
    Experimental Observation of Transition from 2D to 3D Quantum Confinement in Semiconductor Quantum Wires/Quantum dots2006Inngår i: SCOPES Seminar,2006, 2006Konferansepaper (Annet vitenskapelig)
  • 2057. Zhu, Q.
    et al.
    Pelucchi, E.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Dalessi, S.
    Dupertuis, M.-A.
    Moret, N.
    Oberli, D.Y.
    Kapon, E.
    Semiconductor Quantum Wires with Controlled Length and Confinement Potential2006Inngår i: 28th International Conference on the Physics of Semiconductors ICPS,2006, 2006Konferansepaper (Annet vitenskapelig)
  • 2058. Zhu, Q.
    et al.
    Pelucchi, E.
    Karlsson, Fredrik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Moret, N.
    Oberli, D.
    Kapon, E.
    Continuous transition from 2D to 3D quantum confinement realized with pyramidal quantum wires and dots2006Inngår i: 4th International Conference on Quantum Dots,2006, 2006Konferansepaper (Annet vitenskapelig)
  • 2059.
    Zhu, Qing
    et al.
    Ecole Polytech, Lausanne.
    Karlsson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Byszewski, Marcin
    Ecole Polytech, Lausanne.
    Rudra, Alok
    Ecole Polytech, Lausanne.
    Pelucchi, Emanuele
    Ecole Polytech, Lausanne.
    He, Zhanbing
    Ecole Polytech, Lausanne.
    Kapon, Eli
    Ecole Polytech, Lausanne.
    Hybridization of Electron and Hole States in Semiconductor Quantum-Dot Molecules2009Inngår i: Small, ISSN 1613-6810, E-ISSN 1613-6829, Vol. 5, nr 3, s. 329-335Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A novel QD-molecule system is realized using metal–organic vapor-phase epitaxy growth. The dots are tunnel coupled via connected quantum wires (QWRs). The stronger tunnel coupling in this integrated QD-QWR system allows the hybridization of both electron and hole states, yielding direct-real-space excitonic molecules (see image). The structure holds promise for nanophotonic devices for quantum-information-processing applications.

  • 2060.
    Zhu, Xiaolong
    et al.
    Technical University of Denmark, Lyngby.
    Ou, Yiyu
    Technical University of Denmark, Lyngby.
    Jokubavicius, Valdas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Hansen, Ole
    Technical University of Denmark, Lyngby.
    Ou, Haiyan
    Technical University of Denmark, Lyngby.
    Mortensen, N. Asger
    Technical University of Denmark, Lyngby.
    Xiao, Sanshui
    Technical University of Denmark, Lyngby.
    Broadband light-extraction enhanced by arrays of whispering gallery resonators2012Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, nr 24Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We demonstrate a light-extraction approach using a whispering gallery resonators array. The wavelength-scale resonant dielectric nanospheres support whispering gallery modes, which can be coupled with the confined waveguide modes inside the bulk material, thus dramatically improving light extraction. Broadband light-extraction enhancement across the entire visible spectral range is achieved by exciting three low-order and low-quality-factor resonances. As an example, the broadband extraction enhancement of about 50% is obtained for the emission of fluorescent SiC at all the tested angles. The experimental results are supported by numerical simulations. Our light-extraction strategy could enable the manufacturing of high-throughput, nondestructive, and affordable optical coating in a variety of optical devices.

  • 2061.
    Zhuravlev, K S
    et al.
    Physics Dept, Novosibirsk.
    Alexandrov, I A
    Holtz, Per-Olof
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Linear polarized photoluminescence from GaN quantum dots imbedded in AlN matrix2010Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We report microphotoluminescence studies of GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on sapphire substrates. To obtain quantum dots with different density and size a nominal GaN coverage was varied from 1 to 4 monolayers. The highest density of quantum dots was about 1011 cm-2, so about 103 quantum dots was excited in experiments. We found that the photoluminescence intensity of a sample with the smallest amount of deposited GaN decreases in more than two orders of magnitude under continuous-wave laser exposure during about 30 minutes and then it remains stable. The photoluminescence intensity of the rest samples was time-independent quantity. The emission band of the former sample exhibits a prominent linear polarization along the growth plane. We assume that the quite high degree of polarization can be due anisotropy of strain and/or shape of the quantum dots formed near dislocations which act also as recombination centers causing photoluminescence quenching.

  • 2062.
    Zhuravlev, K S
    et al.
    n/a.
    Alexandrov, I A
    n/a.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Linearly polarized photoluminescence from GaN quantum dots embedded in AlN matrix2009Inngår i: International Conference on Physics, Chemistry and Applications of Nanostructures, Belarus, 2009Konferansepaper (Fagfellevurdert)
  • 2063. Zhuravlev, K S
    et al.
    Mansurov, V G
    Yu, A
    Nikitin, A
    Larsson, Mats
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Mobile and immobile photoluminescence bands from single hexagonal GaN quantum dots embedded in an AlN matrix2008Inngår i: ICPS 29th International Conference on the Physics of Semiconductors,2008, 2008Konferansepaper (Fagfellevurdert)
  • 2064. Zhuravlev, KS
    et al.
    Mansurov, VG
    YU, A
    Nikitin, A
    Larsson, Mats
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Power dependence of photoluminescence from single hexagonal GaN quantum dots formed in an AlN matrix2007Inngår i: NANO-2007 workshop,2007, 2007Konferansepaper (Fagfellevurdert)
  • 2065. Zhuravlev, K.S.
    et al.
    Ree, D.D.
    Mansurov, V.G.
    Nikitin, A.Yu.
    Paskov, Plamen
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Microphotoluminescence of GaN/AlN quantum dots grown by MBE2006Inngår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 3, s. 2048-2051Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Presented at: The 6th International Conference on Nitride Semiconductors (ICNS6), Bremen, Germany, Aug 28-Sept 2, 2005

  • 2066. Zhuravlev, KS
    et al.
    Shamirzaev, TS
    Larsson, Mats
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Holtz, Per-Olof
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Materiefysik.
    Photo-luminescence of single InAs quantum dots in an AlAs matrix2007Inngår i: NANO-2007 workshop,2007, 2007Konferansepaper (Fagfellevurdert)
  • 2067. Ziane, D
    et al.
    Bluet, JM
    Guillot, G
    Godignon, P
    Monserrat, J
    Ciechonski, Rafal
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Syväjärvi, Mikael
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Yakimova, Rositsa
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Chen, L
    Mawby, P
    Characterizations of SiC/SiO2 interface quality toward high power MOSFETs realization2004Inngår i: Materials Science Forum, Vols. 457-460, 2004, Vol. 457-460, s. 1281-1286Konferansepaper (Fagfellevurdert)
    Abstract [en]

    The low channel mobility in N-MOS 4H-SiC transistor is a major key issue for the development of power devices with satisfactory on state characteristics. Previous works have demonstrated that this low channel mobility is due to high interface state density (Dit) near the conduction band edge. Furthermore, the realization of SiC MOSFETs sustaining high reverse field necessitates thick epitaxial layer growth. An important thickness (> 30 gm) unfortunately involves important surface roughness which may result in a high interface trap density (Dit) and surface potential fluctuation (sigma(s)) at the SiC/SiO2 interface. In this study, we focus on SiO2/SiC MOS interface quality characterization as a function of process conditions and material properties (dopant type, thick layer growth technique). Investigations of the oxide quality on thick layers grown by CVD and PVT has been realized using CV under UV lightening and GV techniques. We evidenced that the Dit value (between 10(10) cm(-2).eV(-1) and 9x10(10) cm(-2).eV(-1) from 0.9 Ev to 0.2 eV below Ec) and sigma(s) value (60 mV) were slightly lower for thick PVT layers. A discrepancy in the Dit values obtained from C-V and G-V measurements is attributed to the large surface potential standard deviation. Results from an original oxide growth process using a deposited sacrificial silicon layer under UHV conditions are also presented.

  • 2068.
    Zimmermann, F.
    et al.
    TU Bergakad Freiberg, Germany.
    Beyer, Franziska
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Gaertner, G.
    TU Bergakad Freiberg, Germany.
    Roeder, C.
    TU Bergakad Freiberg, Germany.
    Nguyen, Son Tien
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Janzén, Erik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Vesela, D.
    Research Centre Rez, Czech Republic.
    Lorincik, J.
    Research Centre Rez, Czech Republic.
    Hofmann, P.
    NaMLab gGmbH, Germany.
    Krupinski, M.
    NaMLab gGmbH, Germany.
    Mikolajick, T.
    NaMLab gGmbH, Germany; Technical University of Dresden, Germany.
    Habel, F.
    Freiberger Compound Mat GmbH, Germany.
    Leibiger, G.
    Freiberger Compound Mat GmbH, Germany.
    Heitmann, J.
    TU Bergakad Freiberg, Germany.
    Origin of orange color in nominally undoped HVPE GaN crystals2017Inngår i: Optical materials (Amsterdam), ISSN 0925-3467, E-ISSN 1873-1252, Vol. 70, s. 127-130Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this article we investigated unintentionally doped (UID) GaN grown by hydride vapor phase epitaxy (HVPE) with respect to point defects and impurity concentration. The samples were orange tinted to different extent. Optical analysis was performed by micro-photoluminescence and absorption spectroscopy. Absorption measurements revealed an absorption peak at 1.5 eV related to an internal transition in Mn3+ impurities and a second band with low energy onset at 1.9 eV, both increasing with the extent of orange color. Electron paramagnetic resonance investigations showed the presence of Mn2+ and Fe3+ in the colored crystals. The overall impurity concentration was verified by secondary ion mass spectrometry. Orange tint is associated with an increase of transition metal contamination, especially Mn. Based on these observations we suggest that the orange coloring in the investigated UID HVPE GaN samples is caused by the presence of Mn impurities. (C) 2017 Elsevier B.V. All rights reserved.

  • 2069.
    Zimmermann, U
    et al.
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Osterman, J
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Zhang, J
    Henry, Anne
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Hallen, A
    Royal Inst Technol, Dept Microelect & Informat Technol, SE-16440 Kista, Sweden Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden.
    Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers2002Inngår i: Materials Science Forum, Vols. 389-393, 2002, Vol. 389-3, s. 1285-1288Konferansepaper (Fagfellevurdert)
    Abstract [en]

    High-temperature chemical vapour deposition (HTCVD) in a vertical chimney reactor was used to grow thick low-doped epitaxial layers of 4H silicon carbide. These layers were used as drift layers in a combined process to manufacture both bipolar and unipolar high-voltage diodes. The resulting diodes were characterized electrically in order to gain knowledge about the electric quality of the HTCVD epitaxial layers to assess the high-voltage properties of this material.

  • 2070. Zolnai, Z.
    et al.
    Nguyen, Son Tien
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Magnusson, Björn
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Hallin, Christer
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Janzén, Erik
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
    Annealing behaviour of vacancy- and antisite-related defects in electron-irradiated 4H-SiC2004Inngår i: Mater. Sci. Forum, Vol. 457-460, Trans Tech Publications Inc. , 2004, s. 473-Konferansepaper (Fagfellevurdert)
  • 2071.
    Zoulis, G.
    et al.
    CNRS, Montpellier, France.
    Sun, Jianwu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Vasiliauskas, Remigijus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Lorenzzi, J.
    Laboratoire des Multimateriaux et Interfaces, University Claude Bernard Lyon 1, Villeurbanne, France.
    Peyre, H.
    Université Montpellier 2, France.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Ferro, G.
    Laboratoire des Multimateriaux et Interfaces, University Claude Bernard Lyon 1, Villeurbanne, France.
    Juillaguet, S.
    Université Montpellier 2, France.
    Yakimova, Rositza
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Camassel, J.
    CNRS, Montpellier, France .
    Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy2012Inngår i: HETEROSIC and WASMPE 2011 / [ed] Daniel Alquier, Trans Tech Publications Inc., 2012, Vol. 711, s. 149-153Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.

  • 2072.
    Zoulis, Georgios
    et al.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Sun, Jian Wu
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Beshkova, Milena
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Vasiliauskas, Remigijus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Juillaguet, S.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Peyre, H.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Camassel, J.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy2010Inngår i: Silicon Carbide and Related Materials 2009, 2010, Vol. 645, s. 179-182Konferansepaper (Fagfellevurdert)
    Abstract [en]

    Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

  • 2073.
    Ščajev, Patrik
    et al.
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Hassan, Jawad
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Jarašiūnas, Kęstutis
    Institute of Applied Research, Vilnius University, Vilnius, Lithuania.
    Kato, Masashi
    Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Japan.
    Henry, Anne
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Bergman, J Peder
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Comparative Studies of Carrier Dynamics in 3C-SiC Layers Grown on Si and 4H-SiC Substrates2011Inngår i: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 40, nr 4, s. 394-399Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Time-resolved nonlinear optical techniques were applied to determine the electronic parameters of cubic silicon carbide layers. Carrier lifetime, tau, and mobility, mu, were measured in a free-standing wafer grown on undulant Si and an epitaxial layer grown by hot-wall chemical vapor deposition (CVD) on a nominally on-axis 4H-SiC substrate. Nonequilibrium carrier dynamics was monitored in the 80 K to 800 K range by using a picosecond free carrier grating and free carrier absorption techniques. Correlation of tau(T) and mu (a)(T) dependencies was explained by the strong contribution of diffusion-limited recombination on extended defects in the layers. A lower defect density in the epitaxial layer on 4H-SiC was confirmed by a carrier lifetime of 100 ns, being similar to 4 times longer than that in free-standing 3C.

  • 2074.
    Žukauskaitė, Agnė
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Tholander, Christopher
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Pališaitis, Justinas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per O. Å.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Darakchieva, Vanya
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska högskolan.
    Ben Sedrine, Nebiha
    Instituto Tecnológico e Nuclear, 2686-953 Sacavém and CFNUL, Lisbon 1649-003, Portugal.
    Tasnádi, Ferenc
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska högskolan.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    YxAl1-xN Thin Films2012Inngår i: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, nr 42, s. 422001-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Reactive magnetron sputtering was used to deposit YxAl1-xN thin films, 0≤x≤0.22, onto Al2O3(0001) and Si(100) substrates. X-ray diffraction and analytical electron microscopy show that the films are solid solutions. Lattice constants are increasing with Y concentration, in agreement with ab initio calculations. Spectroscopic ellipsometry measurements reveal a band gap decrease from 6.2 eV (x=0) down to 4.9 eV (x=0.22). Theoretical investigations within the special quasirandom structure approach show that the wurtzite structure has the lowest mixingenthalpy for 0≤x≤0.75.

39404142 2051 - 2074 of 2074
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