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  • 301.
    Tengstrand, Olof
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nedfors, Nils
    Department of Chemistry, The Ångström Laboratory, Uppsala University.
    Jansson, Ulf
    Department of Chemistry, The Ångström Laboratory, Uppsala University.
    Flink, Axel
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Incorporation effects of Si in TiCx thin films2012Manuscript (preprint) (Other academic)
    Abstract [en]

    DC magnetron sputtered Ti-Si-C thin films with varying Si content between 0 to 13 at.% were deposited from elemental targets. The effects on microstructure were investigated using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Results show that the growth of pure TiCx onto Al2O3(0001) at a temperature of 350 °C is epitaxial and understoichiometric with x~0.7. For Si contents up to 5 at.%, the Si is incorporated into the TiCx with retained epitaxy. For Si contents above 5 at.%, the Si segregate out from the TiCx to the grain boundaries forming, causing a transition from of epitaxial to polycrystalline and nanocomposite growth.

  • 302.
    Rogström, Lina
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Johansson, Mats
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology. Seco Tools AB, 737 82 Fagersta, Sweden.
    Ghafoor, Naureen
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Influence of chemical composition and deposition conditions on microstructure evolution during annealing of arc evaporated ZrAlN thin films2012In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 30, no 3, p. 031504-Article in journal (Refereed)
    Abstract [en]

    The influence of substrate bias and chemical composition on the microstructure and hardness of arc evaporated Zr1−xAlxN films with 0.12 < x < 0.74 is investigated. A cubic ZrAlN phase is formed at low aluminum contents (x < 0.38) whereas for a high Al-content, above x=0.70, a single-phase hexagonal structure is obtained. For intermediate Al-contents, a two-phase structure is formed. The cubic structured films exhibit higher hardness than the hexagonal structured ones. A low bias results in N-rich films with a partly defect-rich microstructure while a higher substrate bias decreases the grain size and increases the residual stress in the cubic ZrAlN films. Recrystallization and out-diffusion of nitrogen from the lattice in the cubic ZrAlN films takes place during annealing at 800 C, which results in an increased hardness. The cubic ZrAlN phase is stable to annealing temperatures of 1000 C while annealing at higher temperature results in nucleation and growth of hexagonal AlN. In the high Al-content ZrAlN films, formation of ZrN- and AlN-rich domains within the hexagonal lattice during annealing at 1000 C improves the mechanical properties.

  • 303.
    Lundskog, Anders
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hsu, Chih-Wei
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Eriksson, Martin
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Forsberg, Urban
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids2012In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 23, no 30, p. 305708-Article in journal (Refereed)
    Abstract [en]

    Growing InGaN quantum dots (QDs) at the apex of hexagonal GaN pyramids is an elegant approach to achieve a deterministic positioning of QDs. Despite similar synthesis procedures by metal–organic chemical vapor deposition, the optical properties of the QDs reported in the literature vary drastically. The QDs tend to exhibit either narrow or broad emission lines in the micro-photoluminescence spectra. By coupled microstructural and optical investigations, the QDs giving rise to narrow emission lines were concluded to nucleate in association with a (0001) facet at the apex of the GaN pyramid.

  • 304.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigany, Zs
    Hungarian Academic Science, Hungary .
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N-22012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 112, no 1, p. 013305-Article in journal (Refereed)
    Abstract [en]

    Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N-2 ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar+, C+, N-2(+), N+, and CxNy+ ions. An increase of N-2 in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C+, N+, and CN+ ion energies. Ar+, N-2(+), and C2N+ ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C+ ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN+ and C2N+. The formation of fullerene-like structured CNx thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.

  • 305.
    Greczynski, Grzegorz
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greene, Joseph E.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Bolz, Stephan
    CemeCon AG, Germany .
    Koelker, Werner
    CemeCon AG, Germany .
    Schiffers, Christoph
    CemeCon AG, Germany .
    Lemmer, Oliver
    CemeCon AG, Germany .
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Metal versus rare-gas ion irradiation during Ti1-xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias2012In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 30, no 6Article in journal (Refereed)
    Abstract [en]

    Metastable NaCl-structure Ti1-xAlxN is employed as a model system to probe the effects of metal versus rare-gas ion irradiation during film growth using reactive high-power pulsed magnetron sputtering (HIPIMS) of Al and dc magnetron sputtering of Ti. The alloy film composition is chosen to be x = 0.61, near the kinetic solubility limit at the growth temperature of 500 degrees C. Three sets of experiments are carried out: a -60V substrate bias is applied either continuously, in synchronous with the full HIPIMS pulse, or in synchronous only with the metal-rich-plasma portion of the HIPIMS pulse. Alloy films grown under continuous dc bias exhibit a thickness-invariant small-grain, two-phase nanostructure (wurtzite AlN and cubic Ti1-xAlxN) with random orientation, due primarily to intense Ar+ irradiation leading to Ar incorporation (0.2 at. %), high compressive stress (-4.6 GPa), and material loss by resputtering. Synchronizing the bias with the full HIPIMS pulse results in films that exhibit much lower stress levels (-1.8GPa) with no measureable Ar incorporation, larger grains elongated in the growth direction, a very small volume fraction of wurtzite AlN, and random orientation. By synchronizing the bias with the metal-plasma phase of the HIPIMS pulses, energetic Ar+ ion bombardment is greatly reduced in favor of irradiation predominantly by Al+ ions. The resulting films are single phase with a dense competitive columnar structure, strong 111 orientation, no measureable trapped Ar concentration, and even lower stress (-0.9 GPa). Thus, switching from Ar+ to Al+ bombardment, while maintaining the same integrated incident ion/metal ratio, eliminates phase separation, minimizes renucleation during growth, and reduces the high concentration of residual point defects, which give rise to compressive stress.

  • 306.
    Lauridsen, Jonas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Knutsson, A
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Mannerbro, R
    ABB Components, Sweden.
    Andersson, A M
    ABB Corp Research.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Microstructural and Chemical Analysis of AgI Coatings Used as a Solid Lubricant in Electrical Sliding Contacts2012In: Tribology letters, ISSN 1023-8883, E-ISSN 1573-2711, Vol. 46, no 2, p. 187-193Article in journal (Refereed)
    Abstract [en]

    AgI coatings have been deposited by electroplating on Ag-plated Cu coupons. Electron microscopy shows that the coatings consist of weakly agglomerated AgI grains. X-ray diffraction, differential scanning calorimetry, thermogravimetry, and mass spectrometry show that the AgI exhibits a reversible transformation from hexagonal to cubic phase at 150 A degrees C. AgI starts to decompose at 150 A degrees C with an accelerating rate up to the AgI melting temperature (555 A degrees C), where a complex-bonded hydroxide evaporates. Ag pin-on-disk testing shows that the iodine addition to Ag decreases the friction coefficient from 1.2 to similar to 0.4. The contact resistance between AgI and Ag becomes less than 100 mu I (c) after similar to 500 operations as the AgI deagglomerates, and Ag is exposed on the surface and remains low during at least 10,000 reciprocating operations. This makes AgI suitable as a solid lubricant in electrical contacts.

  • 307.
    Žukauskaitė, Agnė
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Wingqvist, Gunilla
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Pališaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Matloub, Ramin
    Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, SwitzerlandNational Laboratory, Oak Ridge, TN 37831, United States.
    Muralt, Paul
    Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland.
    Kim, Yunseok
    Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Microstructure and Dielectric Properties of Piezoelectric Magnetron Sputtered w-ScxAl1-xN thin films2012In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 9, p. 093527-Article in journal (Refereed)
    Abstract [en]

    Piezoelectric wurtzite ScxAl1-xN (x=0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al2O3(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 °C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 °C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x≥0.2 when substrate temperature is increased from 400 to 800 °C. The piezoelectric response of epitaxial ScxAl1-xN films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x=0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

  • 308.
    Eriksson, Anders
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Tengstrand, Olof
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Rosén, Johanna
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nanocolumnar Epitaxial Ti1-xSixN (0 ≤ x ≤ 0.18) Thin Films Grown by Dual Reactive Magnetron Sputtering on MgO (001), (011), and (111) Substrates2012Manuscript (preprint) (Other academic)
    Abstract [en]

    Ti1-xSixNy thin films and multilayers have been grown on single-crystal TiN-templated MgO (001), (011), and (111) substrates kept at 550 °C. Elemental Ti and Si targets were used in UVH reactive dual magnetron sputtering in a mixed Ar/N2 discharge. Composition analysis by time-of-flight energy elastic recoil detection analysis show that the films are close to stoichiometric (0.95 ≤ y ≤ 1.00) with respect to TiN over the wide range of Si concentrations 0 ≤ x ≤ 0.22. High-resolution transmission electron microscopy (TEM) combined with scanning TEM and energy dispersive Xray analysis show that all films grow epitaxially for x ≤ 0.18 and that as much as every fifth Ti atom can be replaced by Si (~10 at.%) in Ti1-xSixN(001). For the (011) and (111)-oriented films, however, only 1-2 at.% Si substitutes for Ti. Instead, Si segregates to form crystalline-to-amorphous SiNz (z ≈ 1) tissue phases, which promote the formation of epitaxial TiN nanocolumns. The nanocolumns have preferred {110} interfaces and {200} top facets and grow several hundreds  of nm in length.

  • 309.
    Lane, Nina J.
    et al.
    Drexel University, USA .
    Vogel, Sven C.
    Los Alamos National Lab, USA .
    Hug, Gilles
    ONERA CNRS, France .
    Togo, Atsushi
    Kyoto University, Japan .
    Chaput, Laurent
    University of Nancy, France .
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Barsoum, Michel W.
    Drexel University, USA .
    Neutron diffraction measurements and first-principles study of thermal motion of atoms in select M(n+1)AX(n) and binary MX transition-metal carbide phases2012In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, no 21Article in journal (Refereed)
    Abstract [en]

    Herein, we compare the thermal vibrations of atoms in select ternary carbides with the formula M(n+1)AX(n) ("MAX phases," M = Ti, Cr; A = Al, Si, Ge; X = C, N) as determined from first-principles phonon calculations to those obtained from high-temperature neutron powder diffraction studies. The transition metal carbides TiC, TaC, and WC are also studied to test our methodology on simpler carbides. Good qualitative and quantitative agreement is found between predicted and experimental values for the binary carbides. For all the MAX phases studied-Ti3SiC2, Ti3GeC2, Ti2AlN, Cr2GeC and Ti4AlN3-density functional theory calculations predict that the A element vibrates with the highest amplitude and does so anisotropically with a higher amplitude within the basal plane, which is in line with earlier results from high-temperature neutron diffraction studies. In some cases, there are quantitative differences in the absolute values between the theoretical and experimental atomic displacement parameters (ADPs), such as reversal of anisotropy or a systematic offset of temperature-dependent ADPs. The mode-dependent Gruneisen parameters are also computed to explore the anharmonicity in the system.

  • 310.
    Gunnarsson Sarius, Niklas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lauridsen, Jonas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lewin, E.
    Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, Sweden.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Öberg, Å.
    ABB Corporate Research, Forskargränd 7, SE-721 78 Västerås, Sweden.
    Ljungcrantz, H.
    Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping, Sweden.
    Leisner, P.
    SP Technical Research Institute of Sweden, Box 857, SE-501 15 Borås, Sweden/School of Engineering Jönköping University, Box 1026, SE- 551 11 Jönköping, Sweden.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ni and Ti diffusion barrier layers between Ti-Si-C-Ag nanocomposite coatings and Cu-based substrates2012In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 8-9, p. 2558-2565Article in journal (Refereed)
    Abstract [en]

    Sputtered Ni and Ti layers were investigated as substitutes for electroplated Ni as adiffusion barrier between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu orCuSn substrates. Samples were subjected to thermal annealing studies by exposure to400 ºC during 11 h. Dense diffusion barrier and coating hindered Cu from diffusing tothe surface. This condition was achieved for electroplated Ni in combination withmagnetron-sputtered Ti-Si-C and Ti-Si-C-Ag layers deposited at 230 ºC and 300 ºC,and sputtered Ti or Ni layers in combination with Ti-Si-C-Ag deposited at 300 ºC.

  • 311.
    Khromov, Sergey
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Avrutin, V.
    Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA.
    Li, Xing
    Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA.
    Morkoç, H.
    Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284, USA.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Optical and structural studies of homoepitaxially grown m-plane GaN2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 17, p. 172108-Article in journal (Refereed)
    Abstract [en]

    We report on cathodoluminescence (CL) and transmission electron microscopy (TEM) studies of m-plane Mg-doped GaN layers grown by metal-organic vapor phase epitaxy (MOVPE). The layers contain basal plane and prismatic stacking faults (SFs) with a density of ~106 cm-1. Broad emission peaks commonly ascribed to SF were found to be insignificant in these samples. However, a set of quite strong and sharp lines were detected in the same spectral region 3.36-3.42 eV. The observed peaks are tentatively explained as excitons bound to some point defects by analogy with p-type GaAs, since donor-acceptor pair (DAP) recombination was ruled out by the CL mapping experiments.

  • 312.
    Khatibi, Ali
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Phase transformations in face centered cubic (Al0.32Cr0.68)(2)O-3 thin films2012In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 14, p. 3216-3222Article in journal (Refereed)
    Abstract [en]

    Face centered cubic (Al0.32Cr0.68)(2)O-3 thin films have been annealed in the temperature range of 500-1000 degrees C during 2-8 h. The fcc structure of the film remains intact when annealed at temperatures up to 700 degrees C for 8 h. X-ray diffraction and transmission electron microscopy show the onset of phase transformation to corundum phase alloys in the sample annealed at 900 degrees C for 2 h, where annealing at 1000 degrees C for 2 h results in complete phase transformation to alpha-(Al0.32Cr0.68)(2)O-3. In-plane and out-of-plane line scans performed in EDX TEM and theta/2 theta XRD patterns did not show any phase separation into alpha-Cr2O3 and Al2O3 prior and after the annealing. The apparent activation energy of this process is 380-480 kJ/mol as determined by the Johnson-Mehl-Avrami model.

  • 313.
    Rogström, Lina
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Ahlgren, Mats
    Sandvik Tooling AB, 126 80 Stockholm, Sweden.
    Almer, J.
    Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439 USA.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Phase transformations in nanocomposite ZrAlN thin films during annealing2012In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 27, no 13, p. 1716-1724Article in journal (Refereed)
    Abstract [en]

    Nanocomposite Zr0.52Al0.48N1.11 thin films consisting of crystalline grains surrounded by an amorphous matrix were deposited using cathodic arc evaporation. The structure evolution after annealing of the films was studied using high-energy x-ray scattering and transmission electron microscopy. The mechanical properties were characterized by nanoindentation on as-deposited and annealed films. After annealing in temperatures of 1050-1400 C nucleation and grain growth of cubic ZrN takes place in the film. This increases the hardness, which reaches a maximum while parts of the film remain amorphous. Grain growth of the hexagonal AlN phase occurs above 1400 C.

  • 314.
    Greczynski, Grzegorz
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Johansson, M.P.
    Sweden Seco Tools AB, Sweden .
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greene, Joseph E
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Role of Tin+ and Aln+ ion irradiation (n=1, 2) during Ti1-xAlxN alloy film growth in a hybrid HIPIMS/magnetron mode2012In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 19-20, p. 4202-4211Article in journal (Refereed)
    Abstract [en]

    Metastable Ti1-xAlxN (0.4 less than= x less than= 0.76) films are grown using a hybrid approach in which high-power pulsed magnetron sputtering (HIPIMS) is combined with dc magnetron sputtering (DCMS). Elemental Al and Ti metal targets are co-sputtered with one operated in HIPIMS mode and the other target in DCMS; the positions of the targets are then switched for the next set of experiments. In both cases, the AlN concentration in the co-sputtered films, deposited at T-s = 500 degrees C with R = 1.5-5.3 angstrom/s, is controlled by adjusting the average DCMS target power. Resulting films are analyzed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, elastic recoil detection analysis, and nanoindentation. Mass spectroscopy is used to determine ion energy distribution functions at the substrate. The distinctly different flux distributions obtained from targets driven in HIPIMS vs. DCMS modes allow the effects of Aln+ and Tin+ (n = 1, 2) ion irradiation on film growth kinetics, and resulting properties, to be investigated separately. Bombardment with Aln+ ions (primarily Al+ in the Al-HIPIMS/Ti-DCMS configuration) during film growth leads to NaCl-structure Ti1-xAlxN (0.53 less than= x less than= 0.60) films which exhibit high hardness (greater than30 GPa) with low stress (0.2-0.7 GPa tensile). In contrast, films with corresponding AlN concentrations grown under Tin+ metal ion irradiation (with a significant Ti2+ component) in the Ti-HIPIMS/Al-DCMS mode have much lower hardness, 18-19 GPa, and high compressive stress ranging up to 2.7 GPa. The surprisingly large variation in mechanical properties results from the fact that the kinetic AlN solubility limit x(max) in Ti1-xAlxN depends strongly on, in addition to T-s and R, the target power configuration during growth and hence the composition of the ion flux. AlN with x(max)similar to 64 mol% can be accommodated in the NaCl structure under Aln+ ion flux, compared with similar to 40 mol% for growth with Tin+ flux. The strong asymmetry in film growth reaction paths is due primarily to the fact that the doubly-ionized metal ion flux is approximately two orders of magnitude higher from the Ti target, than from Al, powered with HIPIMS. This asymmetry becomes decisive upon application of a moderate substrate bias voltage, -60 V, applied synchronously with HIPIMS pulses, during growth.

  • 315.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per O A
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Zhao, Qingxiang
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Li-Chyong
    National Taiwan University, Taiwan .
    Chen, Kuei-Hsien
    National Taiwan University, Taiwan Academic Sinica, Taiwan .
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Room-temperature heteroepitaxy of single-phase Al1-xInxN films with full composition range on isostructural wurtzite templates2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 524, p. 113-120Article in journal (Refereed)
    Abstract [en]

    Al1-xInxN heteroepitaxial layers covering the full composition range have been realized by magnetron sputter epitaxy on basal-plane AlN, GaN, and ZnO templates at room temperature (RT). Both Al1-xInxN single layers and multilayers grown on these isostructural templates show single phase, single crystal wurtzite structure. Even at large lattice mismatch between the film and the template, for instance InN/AlN (similar to 13% mismatch), heteroepitaxy is achieved. However, RT-grown Al1-xInxN films directly deposited on non-isostructural c-plane sapphire substrate exhibit a polycrystalline structure for all compositions, suggesting that substrate surface structure is important for guiding the initial nucleation. Degradation of Al1-xInxN structural quality with increasing indium content is attributed to the formation of more point-and structural defects. The defects result in a prominent hydrostatic tensile stress component, in addition to the biaxial stress component introduced by lattice mismatch, in all RT-grown Al1-xInxN films. These effects are reflected in the measured in-plane and out-of-plane strains. The effect of hydrostatic stress is negligible compared to the effects of lattice mismatch in high-temperature grown AlN layers thanks to their low amount of defects. We found that Vegards rule is applicable to determine x in the RT-grown Al1-xInxN epilayers if the lattice constants of RT-sputtered AlN and InN films are used instead of those of the strain-free bulk materials.

  • 316.
    Greczynski, Grzegorz
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Johansson, M
    Seco Tools AB.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Petrov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Greene, Joseph E
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Selection of metal ion irradiation for controlling Ti1-xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering2012In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, no 8, p. 1036-1040Article in journal (Refereed)
    Abstract [en]

    We demonstrate, for the first time, the growth of metastable single-phase NaCl-structure high-AlN-content Ti1-xAlxN alloys (x andlt;= 0.64) which simultaneously possess high hardness and low residual stress. The films are grown using a hybrid approach combining high-power pulsed magnetron (HPPMS/HIPIMS) and dc magnetron sputtering of opposing metal targets. With HIPIMS applied to the Al target, Aln+ ion irradiation (dominated by Aln+) of the growing film results in alloys 0.55 andlt;= x andlt;= 0.60 which exhibit hardness H similar to 30 GPa and low stress sigma = 0.2-0.7 GPa, tensile. In sharp contrast, films with corresponding AlN concentrations grown with HIPIMS applied to the Ti target, giving rise to Tin+ ion irradiation (with a significant Ti2+ component), are two-phase - cubic (Ti,Al)N and hexagonal AlN - with low hardness, H = 18-19 GPa, and high compressive stress ranging up to 2.7 GPa. Annealing alloys grown with HIPIMS applied to the Al target results in age hardening due to spinodal decomposition; the hardness of Ti0.41Al0.59N increases from 30 to 33 GPa following a 900 degrees C anneal.

  • 317.
    Xia, Chao
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Watcharinyanon, Somsakul
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Zakharov, A A
    Lund University.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Johansson, Leif I
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Virojanadara, Chariya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Si intercalation/deintercalation of graphene on 6H-SiC(0001)2012In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 85, no 4, p. 045418-Article in journal (Refereed)
    Abstract [en]

    The intercalation and deintercalation mechanisms of Si deposited on monolayer graphene grown on SiC(0001) substrates and after subsequent annealing steps are investigated using low-energy electron microscopy (LEEM), photoelectron spectroscopy (PES), and micro-low-energy electron diffraction (mu-LEED). After Si deposition on samples kept at room temperature, small Si droplets are observed on the surface, but no intercalation can be detected. Intercalation is revealed to occur at an elevated temperature of about 800. C. The Si is found to migrate to the interface region via defects and domain boundaries. This observation may provide an answer to the problem of controlling homogeneous bi-/multilayer graphene growth on nearly perfect monolayer graphene samples prepared on SiC(0001). Likewise, Si penetrates more easily small monolayer graphene domains because of the higher density of domain boundaries. Upon annealing at 1000-1100 degrees C, formation of SiC on the surface is revealed by the appearance of a characteristic surface state located at about 1.5 eV below the Fermi level. A streaked mu-LEED pattern is also observed at this stage. The SiC formed on the surface is found to decompose again after annealing at temperatures higher than 1200 degrees C.

  • 318.
    Palisaitis, Justinas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Spinodal decomposition of Al0.3In0.7N(0001) layers following in-situ thermal annealing as investigated by STEM-VEELS2012Manuscript (preprint) (Other academic)
    Abstract [en]

    The thermal stability and spinodal decomposition of thin Al0.3In0.7N layers was studied in-situ by scanning transmission electron microscopy following annealing in a temperature range from 700 oC to 900 oC. The results show that for increasing layer thicknesses (from ~4 nm to ~22 nm) surface directed spinodal decomposition is initiated at Al0.3In0.7N/AlN interfaces and columnar boundaries in the Al0.3In0.7N layers. In the thin layers (~10 nm) annealing caused a single composition layer to split into doubly modulated layers with a compositional undulation perpendicular to the interfaces, while for the thicker layers (~22 nm) the spinodally decomposed structure is more random.

  • 319.
    Johnson, Lars
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Thuvander, Mattias
    Chalmers University of Technology.
    Stiller, Krystyna
    Chalmers University of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Spinodal decomposition of Ti0.33Al0.67N thin films studied by atom probe tomography2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 13, p. 4362-4368Article in journal (Refereed)
    Abstract [en]

    Details of the phase decomposition in NaCl-structure Ti0.33Al0.67N thin films deposited by cathodic arc evaporation are studied by atom probe tomography. We demonstrate that as-deposited films are in the earliest stage of decomposition for which electron microscopy and x-ray diffraction indicate a single-phase solid solution. Annealing at 900 degrees C further activates spinodal decomposition of the films, although pockets of unde-composed material remain after 2 h. N preferentially segregates to the AlN and TiN domains, causing the TiAlN matrix to be understoichiometric, by the energetics of N vacancies in TiAlN. The corresponding modulation in stoichiometry implies a Kirkendall effect, caused by different Al and Ti diffusivities.

  • 320.
    Rogström, Lina
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Ullbrand, Jennifer
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Almer, J.
    Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 USA.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jansson, B.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology. Seco Tools AB, 737 82 Fagersta, Sweden.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Strain evolution during spinodal decomposition of TiAlN thin films2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 17, p. 5542-5549Article in journal (Refereed)
    Abstract [en]

    We use a combination of in-situ x-ray scattering experiments during annealing and phase-field simulations to study the strain and microstructure evolution during decomposition of TiAlN thin films. The evolved microstructure is observed to depend on composition, where the larger elastic anisotropy of higher Al content films causes formation of elongated AlN and TiN domains. The simulations show strain formation in the evolving cubic-AlN and TiN domains, which is a combined effect of increasing lattice mismatch and elastic incompatibility between the domains. The experimental results show an increased compressive strain in the TiAlN phase during decomposition due to the onset of transformation to hexagonal-AlN.

  • 321.
    Broitman, Esteban
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Furlan, Andrej
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Geuorguiev, G. K.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigany, Zsolt
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Structural and Mechanical Properties of CNx and CPx Thin Solid Films2012In: Key Engineering Materials, ISSN 1013-9826, E-ISSN 1662-9795, Vol. 488-489, p. 581-584Article in journal (Refereed)
    Abstract [en]

    The inherent resiliency, hardness and relatively low friction coefficient of the fullerene-like (FL) allotrope of carbon nitride (CNx) thin solid films give them potential in numerous tribological applications. In this work, we study the substitution of N with P to grow FL-CPx to achieve better cross- and inter-linking of the graphene planes, improving thus the materials mechanical and tribological properties. The CNx and CPx films have been synthesized by DC magnetron sputtering. HRTEM have shown the CPx films exhibit a short range ordered structure with FL characteristics for substrate temperature of 300 degrees C and for a phosphorus content of 10-15 at.%. These films show better mechanical properties in terms of hardness and resiliency compared to those of the FL-CNx films. The low water adsorption of the films is correlated to the theoretical prediction for low density of dangling bonds in both, CNx and CPx. First-principles calculations based on Density Functional Theory (DFT) were performed to provide additional insight on the structure and bonding in CNx, CPx and a-C compounds.

  • 322.
    Khatibi, Ali
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sjolen, J.
    SECO Tools AB, Sweden .
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Structural and mechanical properties of Cr-Al-O-N thin films grown by cathodic arc deposition2012In: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 60, no 19, p. 6494-6507Article in journal (Refereed)
    Abstract [en]

    Coatings of (CrxAl1-x)(delta)(O1-yNy)(xi) with 0.33 less than= x less than= 0.96, 0 less than= y less than= 1 and 0.63 less than= delta/xi less than= 1.30 were deposited using cathodic arc evaporation in N-2/O-2 reactive gas mixtures on 50 V negatively biased WC-10 wt.% Co substrates from different Cr and Al alloys with three different Cr/Al compositional ratios. For N-2 less than 63% of the total gas, ternary (Cr,Al)(2)O-3 films containing less than1 at.% of N forms; as determined by elastic recoil detection analysis. Increasing the N-2 fraction to 75% and above results in formation of quaternary oxynitride films. Phase analyses of the films by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy show the predominance of cubic Cr-Al-N and cubic-(Cr,Al)(2)O-3 solid solutions and secondary hexagonal alpha-(Cr,Al)(2)O-3 solid solution. High Cr and Al contents result in films with higher roughness, while high N and O contents result in smoother surfaces. Nanoindentation hardness measurements showed that Al-rich oxide or nitride films have hardness values of 24-28 GPa, whereas the oxynitride films have a hardness of similar to 30 GPa, regardless of the Cr and Al contents. Metal cutting performance tests showed that the good wear properties are mainly correlated to the oxygen-rich coatings, regardless of the cubic or corundum fractions.

  • 323.
    Goyenola, Cecilia
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Stafström, Sven
    Linköping University, Department of Physics, Chemistry and Biology, Computational Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev, Gueorgui Kostov
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Structural Patterns Arising during Synthetic Growth of Fullerene-Like Sulfocarbide2012In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 116, no 39, p. 21124-21131Article in journal (Refereed)
    Abstract [en]

    Carbon-based fullerene-like (FL) solid compounds are a new class of materials with extraordinary mechanical properties, which can be tuned by the dopant choice and its concentration. In this work, FL sulfocarbide (CSx) was studied by DFT simulations during synthetic growth with CmSn (m, n andlt;= 2). The energetic and structural effects of S atoms at C sites in a graphene-like network were addressed by geometry optimizations and cohesive energy calculations. Results showed that for S concentrations lower than 10 at. %, smoothly bent pure hexagonal networks predominate. For higher S concentrations, the higher defect concentration leads to stronger deformation of the graphene-like sheets. It was determined that FL-CSx is well-structured (not amorphous) for S contents between 10 and 20 at. %. In contrast to other FL materials, bond rotation mechanisms are not expected to play any significant role during FL-CSx formation, and cross-linking sites are less frequent and may be assimilated in the planar structure during growth. Both quasi-planar networks and cage-like conformations were found to form during the synthetic growth of CSx. The detailed analysis of how CSx structural patterns form during its synthetic growth provides a realistic picture for the deposition of this novel compound by magnetron sputtering.

  • 324.
    Lane, Nina J.
    et al.
    Drexel University, USA .
    Naguib, Michael
    Drexel University,USA .
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Barsoum, Michel W.
    Drexel University, USA .
    Structure of a new bulk Ti5Al2C3 MAX phase produced by the topotactic transformation of Ti2AlC2012In: Journal of the European Ceramic Society, ISSN 0955-2219, E-ISSN 1873-619X, Vol. 32, no 12, p. 3485-3491Article in journal (Refereed)
    Abstract [en]

    Upon annealing cold-pressed Ti2AlC,-325 mesh powders, at 1500 degrees C for 8 h in argon, the resulting partially sintered sample contained 43(+/- 2) wt.% of the layered ternary carbide Ti5Al2C3. Herein, the X-ray powder diffraction pattern of Ti5Al2C3 is reported for the first time and its structure and stoichiometry are confirmed through high-resolution transmission electron microscopy. This phase has a trigonal structure (space group P3m1) with a unit cell consisting of 3 formula units and cell parameters of a=3.064 angstrom, c = 48.23 angstrom. The lattice parameters determined through first principles calculations agree reasonably well with the experimentally determined values. At 147.1 GPa, the calculated bulk modulus falls between the bulk moduli of Ti2AlC and Ti3AlC2. The transformation from Ti2AlC to Ti5Al2C3 is topotactic.

  • 325.
    Khranovskyy, Volodymyr
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ekblad, Tobias
    Linköping University, Department of Physics, Chemistry and Biology, Sensor Science and Molecular Physics. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Surface morphology effects on the light-controlled wettability of ZnO nanostructures2012In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 258, no 20, p. 8146-8152Article in journal (Refereed)
    Abstract [en]

    ZnO nanostructures of diverse morphology with shapes of corrals and cabbages as well as open and filled hexagons and sheaves prepared by APMOCVD technique, are investigated with water contact angle (CA) analysis. The as-grown ZnO nanostructures exhibit pure hydrophobic behavior, which is enhanced with the increase of the nanostructures surface area. The most hydrophobic structures (CA = 124 degrees) were found to be the complex nanosheaf, containing both the macro-and nanoscale features. It is concluded that the nanoscale roughness contributes significantly to the hydrophobicity increase. The character of wettability was possible to switch from hydrophobic-to-superhydrophilic state upon ultra violet irradiation. Both the rate and amplitude of the contact angle depend on the characteristic size of nanostructure. The observed effect is explained due to the semiconductor properties of zinc oxide enhanced by increased surface chemistry effect in nanostructures.

  • 326.
    Rindermann, Jan Junis
    et al.
    University of Southampton.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
    Amano, Hiroshi
    Nagoya University.
    Lagoudakis, Pavlos G.
    University of Southampton.
    The effect of exciton dimensionality on resonance energytransfer: advances for organic color converters in hybridinorganic/organic LEDs2012In: Proceedings of SPIE: PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XX, 2012, Vol. 8255, p. 82550I-01-82550I-10Conference paper (Refereed)
    Abstract [en]

    The dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on excitondimensionality is studied experimentally and by means of supporting simulations. The variation of temperatureeffectively tunes the balance between localized and free excitons, and allows to investigate the effect of theexcitonic potential disorder on resonance energy transfer. Our theoretical calculations give insight into theexperimentally observed temperature dependence of resonance energy transfer, and allow us to quantify thecontribution from localized and free excitons. It is shown that free excitons can undergo resonance energytransfer at a rate that is an order of magnitude higher compared to localized excitons. In planar geometriesnonradiative resonance energy transfer is dominating over radiative energy transfer and hence we propose hybridinorganic-organic LEDs which are optimized for resonance energy transfer to an organic or QD-based colorconverter.

  • 327.
    Lauridsen, Jonas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Nedfors, N
    Uppsala University, Sweden .
    Jansson, U
    Uppsala University, Sweden .
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Ti-B-C nanocomposite coatings deposited by magnetron sputtering2012In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 258, no 24, p. 9907-9912Article in journal (Refereed)
    Abstract [en]

    Ti-B-C nanocomposite coatings with a B content of 8-17 at.% have been deposited by magnetron sputtering from B4C, Ti, and C targets. X-ray diffraction, photoelectron spectroscopy, and electron microscopy show that the coatings consist of nanocrystalline (nc) TiC: B embedded in a matrix of amorphous (a) C, BCx, TiOx and BOx. The fraction of amorphous phase scales with the Ti concentration, where the matrix predominantly consists of free C with some BCx in coatings with a C/Ti ratio andgt; 1, while the matrix predominantly consists of BCx with some free C in coatings with a C/Ti ratio andlt; 1. nc-TiC:B/a-BCx/a-C coatings with low amount of free C exhibit a contact resistance comparable to the contact resistance of an Ag sputtered coating at loads of similar to 1 N against an Au probe, despite the O content of similar to 16 at.%.

  • 328.
    Sangiovanni, Davide
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chirita, Valeriu
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Toughness enhancement in TiAlN-based quarternary alloys2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 11, p. 4080-4088Article in journal (Refereed)
    Abstract [en]

    Improved toughness in hard and superhard thin films is a primary requirement for present day ceramic hard coatings, known to be prone to brittle failure during in-use conditions. We use density functional theory calculations to investigate a number of (TiAl)(1-x)MxN thin films in the B1 structure, with 0.06 andlt;= x andlt;= 0.75 obtained by alloying TiAlN with M = V, Nb, Ta, Mo and W. Results show significant ductility enhancements, hence increased toughness, in these compounds. Importantly, these thin films are also predicted to be superhard, with similar or increased hardness values, compared to Ti0.5Al0.5 N. For (TiAl)(1-x)WxN the results are experimentally confirmed. The ductility increase originates in the enhanced occupancy of d-t(2g) metallic states, induced by the valence electrons of substitutional elements (V, Nb, Ta, Mo, W). This effect is more pronounced with increasing valence electron concentration, and, upon shearing, leads to the formation of a layered electronic structure in the compound material, consisting of alternating layers of high and low charge density in the metallic sublattice, which in turn, allows a selective response to normal and shear stresses.

  • 329.
    Naguib, Michael
    et al.
    University of Penn.
    Mashtalir, Olha
    University of Penn.
    Carle, Joshua
    University of Penn.
    Presser, Volker
    University of Penn.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gogotsi, Yury
    University of Penn.
    Barsoum, Michel W
    University of Penn.
    Two-Dimensional Transition Metal Carbides2012In: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 6, no 2, p. 1322-1331Article in journal (Refereed)
    Abstract [en]

    Herein we report on the synthesis of two-dimensional transition metal carbides and carbonitrides by immersing select MAX phase powders in hydrofluoric acid, HF. The MAX phases represent a large (andgt;60 members) family of ternary, layered, machinable transition metal carbides, nitrides, and carbonitrides. Herein we present evidence for the exfoliation of the following MAX phases: Ti2AlC, Ta4AlC3, (Ti-0.5,Nb-0.5)(2)AlC, (V-0.5,Cr-0.5)(3)AlC2, and Ti3AlCN by the simple immersion of their powders, at room temperature, in HF of varying concentrations for times varying between 10 and 72 h followed by sonication. The removal of the "A" group layer from the MAX phases results in 2-D layers that we are labeling MXenes to denote the loss of the A element and emphasize their structural similarities with graphene. The sheet resistances of the MXenes were found to be comparable to multilayer graphene. Contact angle measurements with water on pressed MXene surfaces showed hydrophilic behavior.

  • 330.
    Žukauskaitė, Agnė
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Tholander, Christopher
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Pališaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Darakchieva, Vanya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ben Sedrine, Nebiha
    Instituto Tecnológico e Nuclear, 2686-953 Sacavém and CFNUL, Lisbon 1649-003, Portugal.
    Tasnádi, Ferenc
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Alling, Björn
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    YxAl1-xN Thin Films2012In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, no 42, p. 422001-Article in journal (Refereed)
    Abstract [en]

    Reactive magnetron sputtering was used to deposit YxAl1-xN thin films, 0≤x≤0.22, onto Al2O3(0001) and Si(100) substrates. X-ray diffraction and analytical electron microscopy show that the films are solid solutions. Lattice constants are increasing with Y concentration, in agreement with ab initio calculations. Spectroscopic ellipsometry measurements reveal a band gap decrease from 6.2 eV (x=0) down to 4.9 eV (x=0.22). Theoretical investigations within the special quasirandom structure approach show that the wurtzite structure has the lowest mixingenthalpy for 0≤x≤0.75.

  • 331.
    Samuelsson, Mattias
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Högberg, Hans
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    ZrB2 thin films grown by high power impulse magnetron sputtering (HiPIMS) from a compound target2012In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 526, p. 163-167Article in journal (Refereed)
    Abstract [en]

    ZrB2 thin films were grown on Si by high power impulse magnetron sputtering (HiPIMS) from a compound target in an industrial deposition system. By keeping a constant average power while modifying the HiPIMS pulse repetition frequency, the pulse peak current and thereby the degree of ionisation was varied. The films were characterised using X-ray diffraction techniques, scanning electron microscopy, time-of-flight elastic recoil detection analysis, and four-point probe measurements. It was found that the composition of the films matched closely that of the target material, and the films were low in contamination. The films were crystalline with a strong (000n) preferred orientation, and that the residual stress could be adjusted, from tensile to compressive, by increasing the degree of ionisation. The film morphology appeared dense, with a smooth surface, and the resistivity was found to range from 180 to 250 μΩcm with no clear dependence on frequency in the investigated parameter range.

  • 332.
    Alling, Björn
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Ruban, A. V.
    Royal Institute of Technology, Department of Material Science and Engineering.
    Karimi, A
    Ecole Polytechnique Federale de Lausanne, IPMC.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    A unified cluster expansion method applied to the configurational thermodynamics of cubic TiAlN2011In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, no 10, p. 104203-Article in journal (Refereed)
    Abstract [en]

    We use a study of the cubic Ti1−xAlxN system to illustrate a practical way of combining the major methodologies within alloy theory, the Connolly-Williams cluster expansion and the generalized perturbation method, in order to solve difficult alloy problems. The configurational, concentration dependent, Hamiltonian is separated into a fixed-lattice and a local lattice relaxation part. The effective cluster interactions of the first part is obtained primarily with a GPM-based approach while the later is obtained using cluster expansion. In our case the impact on the isostructural phase diagram of considering short range clustering beyond the mean field approximation, obtained from the mixing enthalpy and entropy of the random alloy, is rather small, especially in the composition region x ≤ 0.66, within reach of thin film growth techniques.

  • 333.
    Frodelius, Jenny
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Johansson, Emma M.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Córdoba, José M.
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Annealing of thermally sprayed Ti2AlC coatings2011In: INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, ISSN 1546-542X, Vol. 8, no 1, p. 74-84Article in journal (Refereed)
    Abstract [en]

    Phase transformations during annealing of coatings sprayed with the High Velocity Oxy-Fuel technique using Ti2AlC powder have been investigated by in-situ x-ray diffraction. The asdeposited coatings, consisting of Ti2AlC, Ti3AlC2, TiC, Ti-Al, and oxides, are stable up to 500 °C. Ti3AlC2 forms above 550 °C and Ti2AlC forms above 700 °C by intercalation of Al into TiCx. For temperatures between 900 and 1100 °C, Ti3AlC2 and Ti2AlC decompose by losing Al to the surrounding matrix resulting in TiCx, and Al2O3. The thermal expansion coefficient between ambient and 700°C is 11.9·10-6 K-1. The thermal diffusivity at room temperature is 1.9·10-6 m2/s.

  • 334.
    Kerdsongpanya, Sit
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Van Nong, Ngo
    Technical University of Denmark.
    Pryds, Nini
    Technical University of Denmark.
    Zukauskaite, Agne
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Wingqvist, Gunilla
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Anomalously high thermoelectric power factor in epitaxial ScN thin films2011In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 99, no 23, p. 232113-Article in journal (Refereed)
    Abstract [en]

    Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (similar to 1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of similar to 2.94 mu Omega m, while its Seebeck coefficient is approximately similar to-86 mu V/K at 800 K, yielding a power factor of similar to 2.5 x 10(-3) W/mK(2). This value is anomalously high for common transition-metal nitrides.

  • 335.
    Pore, Viljami
    et al.
    University of Helsinki.
    Dimri, Mukesh
    National Institute for Chemistry Physics and Biophysics,Tallinn.
    Khanduri, Himani
    National Institute for Chemistry Physics and Biophysics,Tallinn.
    Stern, Raivo
    National Institute for Chemistry Physics and Biophysics,Tallinn.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Kukli, Kaupo
    University of Helsinki.
    Ritala, Mikko
    University of Helsinki.
    Leskela, Markku
    University of Helsinki.
    Atomic layer deposition of ferromagnetic cobalt doped titanium oxide thin films2011In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 519, no 10, p. 3318-3324Article in journal (Refereed)
    Abstract [en]

    TiO2 thin films doped or mixed with cobalt oxide were grown by atomic layer deposition using titanium tetramethoxide and cobalt(III)acetylacetonate as metal precursors. The films could be deposited using both 03 and H2O as oxygen precursors. The films grown using water exhibited considerably smoother surface than those grown with ozone. The TiO2:Co films with Co/(Co + Ti) cation ratio ranging from 0.01 to 0.30 were crystallized by annealing at 650 C, possessing mixed phase composition comprising rutile and anatase and, additionally, CoTiO3 or CoTi2O5. The annealed films demonstrated magnetic response expressed by magnetization curves with certain hysteresis and coercive fields.

  • 336.
    Kukli, Kaupo
    et al.
    University of Helsinki.
    Kemell, Marianna
    University of Helsinki.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Riedel, Stefan
    Fraunhofer Centre for Nanoelect Technology.
    Sundqvist, Jonas
    Fraunhofer Centre Nanoelect Technology.
    Ritala, Mikko
    University of Helsinki.
    Leskela, Markku
    University of Helsinki.
    Atomic Layer Deposition of Ruthenium Films on Strontium Titanate2011In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 11, no 9, p. 8378-8382Article in journal (Refereed)
    Abstract [en]

    Atomic layer deposition of ruthenium on SrTiO(3) layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO(2) films and SiO(2)/Si surfaces. Deposition temperature was 325 degrees C. Using rather short but intense air pulses, smooth and uniform Ru films were deposited on SrTiO(3). The films were crystallized at early stages of the growth. The nucleation density and rate on SrTiO(3) were notably lower compared to that on ZrO(2) and SiO(2), but the physical qualities including the film conductivity were considerably enhanced after reaching Ru film thickness around 10 nm.

  • 337.
    Kostov Gueorguiev, Gueorgui
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Goyenola, Cecilia
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Schmidt, Susann
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    CF(x): A first-principles study of structural patterns arising during synthetic growth2011In: Chemical Physics Letters, ISSN 0009-2614, E-ISSN 1873-4448, Vol. 516, no 1-3, p. 62-67Article in journal (Refereed)
    Abstract [en]

    Structural and bonding patterns arising from the incorporation of fluorine atoms in a graphene-like network relevant to the deposition of carbon fluoride (CF(x)) films were addressed by first-principles calculations. We find that large N-member (N = 8-12) rings, defects by sheet branching, and defects associated with bond rotation pertain to CF(x). The cohesive energy gains associated with these patterns are similar to 0.2-0.4 eV/at., which is similar to those for a wide range of defects in other C-based nanostructured solids. Fullerene-like CF(x) is predicted for F concentrations below similar to 10 at.%, while CF(x) compounds with higher F content are predominantly amorphous or polymeric.

  • 338.
    Schmidt, Susann
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greczynski, Grzegorz
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Goyenola, Cecilia
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Kostov Gueorguiev, Gueorgui
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Czigany, Zs
    Hungarian Academic Science.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Gueorguiev Ivanov, Ivan
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    CF(x) thin solid films deposited by high power impulse magnetron sputtering: Synthesis and characterization2011In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 206, no 4, p. 646-653Article in journal (Refereed)
    Abstract [en]

    Fluorine containing amorphous carbon films (CF(x), 0.16 andlt;= x andlt;= 0.35) have been synthesized by reactive high power impulse magnetron sputtering (HiPIMS) in an Ar/CF(4) atmosphere. The fluorine content of the films was controlled by varying the CF(4) partial pressure from 0 mPa to 110 mPa at a constant deposition pressure of 400 mPa and a substrate temperature of 110 degrees C. The films were characterized regarding their composition, chemical bonding and microstructure as well as mechanical properties by applying elastic recoil detection analysis, X-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and nanoindentation. First-principles calculations were carried out to predict and explain F-containing carbon thin film synthesis and properties. By geometry optimizations and cohesive energy calculations the relative stability of precursor species including C(2), F(2) and radicals, resulting from dissociation of CF4, were established. Furthermore, structural defects, arising from the incorporation of F atoms in a graphene-like network, were evaluated. All as-deposited CF(x) films are amorphous. Results from X-ray photoelectron spectroscopy and Raman spectroscopy indicate a graphitic nature of CF(x) films with x andlt;= 0.23 and a polymeric structure for films with x andgt;= 0.26. Nanoindentation reveals hardnesses between similar to 1 GPa and similar to 16 GPa and an elastic recovery of up to 98%.

  • 339.
    Hsiao, Ching-Lien
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Chen, Ruei-San
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per O.Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Sandström, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Composition tunable Al1-xInxN nanorod arrays grown by ultra-high-vacuum magnetron sputter epitaxy2011Manuscript (preprint) (Other academic)
    Abstract [en]

    Self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration, 0.10 ≤ x ≤ 0.32 have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layers assistance. The formation of nanorods was very sensitive to the applied seed layer. Without proper seed layer assistance a continuous Al1-xInxN film was grown. The nanorods exhibit hexagonal crosssections with preferential growth along the c axis. A coaxial rod structure with higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive xray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ~5.46 eV, which was accompanied by a strong defectrelated emission at ~ 3.38 eV.

  • 340.
    Junis Rindermann, Jan
    et al.
    University of Southampton.
    Pozina, Galia
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Amano, Hiroshi
    Nagoya University.
    Lagoudakis, Pavlos G.
    University of Southampton.
    Dependence of Resonance Energy Transfer on Exciton Dimensionality2011In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 107, no 23, p. 236805-Article in journal (Refereed)
    Abstract [en]

    We investigate the dependence of resonance energy transfer from Wannier-Mott excitons to an organic overlayer on exciton dimensionality. We exploit the excitonic potential disorder in a single quantum well to tune the balance between localized and free excitons by scaling the Boltzmann distribution of excitons through temperature. Theoretical calculations predict the experimentally observed temperature dependence of resonance energy transfer and allow us to quantify the contribution of localized and free excitons. We show that free excitons can undergo resonance energy transfer with an order of magnitude higher rate compared to localized excitons, emphasizing the potential of hybrid optoelectronic devices utilizing resonance energy transfer as a means to overcome charge transfer related limitations.

  • 341.
    Pearce, Ruth
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Yakimova, Rositza
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Andersson, Mike
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Lloyd Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Development of FETs based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection2011In: Proceedings of the International Conference on Silicon Carbide and Related materials, 2011, p. 405-Conference paper (Refereed)
  • 342.
    Pozina, Galia
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Khromov, Sergey
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hemmingsson, Carl
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Effect of silicon and oxygen doping on donor bound excitons in bulk GaN2011In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 16, p. 165213-Article in journal (Refereed)
    Abstract [en]

    Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and oxygen were varied in the range between 10(17) and 10(18) cm(-3), as confirmed by secondary ion mass spectroscopy (SIMS). We show that a reduction of the background silicon concentration by one order of magnitude compared to the background level in undoped samples can be achieved by incorporation of oxygen during the growth. A strong band gap narrowing (BGN) of similar to 6 meV was observed with increasing doping in the studied samples. The low temperature PL recombination time for donor-bound excitons (DBEs) was found to depend significantly on donor concentration. A model assuming generation of DBEs by capturing of free excitons by neutral donors explains the experimental results at low temperature. From fitting the experimental DBE lifetime to the model, the donor concentration dependence for O and Si donors could be reproduced. An effective exciton capture cross-section was found to be similar to 9.4 x 10(-15) and 1.2 x 10(-14) cm(2) for silicon and oxygen donors, respectively.

  • 343.
    Palisaitis, Justinas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Junaid, Muhammad
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O.Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Effect of strain on low-loss electron energy loss spectra of group III-nitrides2011In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 24, p. 245301-Article in journal (Refereed)
    Abstract [en]

    Low-loss EELS was used to acquire information about the strain state in group III-nitrides. Experimental and theoretical simulation results show that the bulk plasmon peak position varies near linearly with unit cell volume variations due to strain. A unit cell volume change of 1% results in a bulk plasmon peak shift of 0.159 eV, 0.168 eV, and 0.079 eV for AlN, GaN, and InN, respectively, according to simulations. The AlN peak shift was experimentally corroborated with a peak shift of 0.156 eV, where the applied strain caused a 1% volume change. It is also found that while the bulk plasmon energy can be used as a measure of the composition in a III-nitride alloy for relaxed structures, the presence of strain significantly affects such a measurement. The strain has a lower impact on the peak shift for Al(1-x)InxN (3% compositional error per 1 % volume change) and In(1-x)GaxN alloys compared to significant variations for Al(1-x)GaxN (16% compositional error for 1% volume change). Hence low-loss studies off III-nitrides, particularly for confined structures, must be undertaken with care and understanding.

  • 344.
    Rachbauer, Richard
    et al.
    Montan University Leoben.
    Holec, David
    Montan University Leoben.
    Lattemann, Martina
    Tech University of Darmstadt.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Mayrhofer, Paul H.
    Montan University Leoben.
    Electronic origin of structure and mechanical properties in Y and Nb alloyed Ti-Al-N thin films2011In: International Journal of Materials Research - Zeitschrift für Metallkunde, ISSN 1862-5282, E-ISSN 2195-8556, Vol. 102, no 6, p. 735-742Article in journal (Refereed)
    Abstract [en]

    Ti(1-x)A(x)N thin films are industrially well established protective coatings, whose beneficial mechanical properties are mainly based on the formation of a metastable microstructure and local composition during film synthesis. Alloying of a transition metal (TM) to Ti(1-x)Al(x)N is a promising approach to reach yet higher oxidation and corrosion resistance in high-temperature environments, while maintaining a high intrinsic hardness and elasticity, being essential for a good wear performance. In order to study the effect of alloying with Y and Nb on the structure and mechanical properties of the industrially preferred cubic (c) Ti(1-x)Al(x)N system, quaternary Ti(1-x-z)Al(x)Y(z)N and Ti(1-x)Al(x)Nb(z)N films were deposited by means of plasma-assisted reactive magnetron sputtering and investigated using X-ray diffraction, transmission electron microscopy and nanoindentation. It is shown that Y addition to c-Ti(0.42)Al(0.58)N changes its structure towards single phase wurtzite (w) Ti(0.36)Al(0.55)Y(0.09)N, with deteriorated mechanical properties. In contrast, by the addition of Nb the structure remains cubic up to the studied composition of c-Ti(0.35)Al(0.57)Nb(0.08)N and the film hardness increases from 30.1 to 39.5 GPa. Ab initio studies show that the effect of Y and Nb alloying on structure and mechanical properties of quaternary Ti(1-x-z)Al(x)TM(z)N is not only correlated with strain increase due to lattice mismatch, but rather the changed electronic configuration.

  • 345.
    Junaid, Muhammad
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Hsiao, Ching-Lien
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Persson, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Electronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target2011In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 14, p. 141915-Article in journal (Refereed)
    Abstract [en]

    Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. X-ray rocking curve shows narrow fullwidth at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. The high structural and optical qualities indicate that MSEgrown GaN epilayers can be used for fabricating high-performance devices without the need of any buffer layer.

  • 346.
    Gunnarsson Sarius, Niklas
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Leisner, Peter
    SP Technical Research Institute of Sweden, Box 857, 501 15 Borås, Sweden/School of Engineering, Jönköping University, Sweden.
    Hald, J.
    ENKOTEC A/S, Denmark.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Electroplating of nickel in grooves under the influence of low and medium frequency ultrasound2011In: Journal for Electrochemistry and Plating Technology, ISSN 1866-7406, Vol. 1, no 3, p. 19-28Article in journal (Refereed)
    Abstract [en]

    The effect of ultrasonics on filling properties has been studied by Ni electroplating from a sulphamate electrolyte in high aspect ratio grooves. The experiments have been performed with two different modes of ultrasound: a) 25 kHz ultrasound with an effect of 225 W directed perpendicular to the substrate surface; b) ultrasonic standing waves of 100 kHz and 400 kHz parallel to the substrate surface. It was found that both methods improve the filling in grooves that are between 0.35 and 1 mm wide with aspect ratios between 0.6 and 3, compared to electroplating with conventional agitation. Under the investigated conditions the 400 kHz standing wave parallel to the surface was most efficient to improve filling of grooves.

  • 347.
    Scabarozi, T H
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hettinger, J D
    Rowan University.
    Lofland, S E
    Rowan University.
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Epitaxial growth and electrical-transport properties of Ti(7)Si(2)C(5) thin films synthesized by reactive sputter-deposition2011In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 65, no 9, p. 811-814Article in journal (Refereed)
    Abstract [en]

    Epitaxial predominantly phase-pure Ti(7)Si(2)C(5) thin films were grown onto Al(2)O(3)(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is similar to 60.2 angstrom; the Ti(7)Si(2)C(5) unit cell comprises alternating Ti(3)SiC(2)-like and Ti(4)SiC(3)-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti(7)Si(2)C(5) relative to Ti(3)SiC(2) and Ti(4)SiC(3) is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of similar to 45 mu Omega cm.

  • 348.
    Pearce, Ruth
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Iakimov, Tihomir
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Andersson, Mike
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Lloyd Spetz, Anita
    Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection2011In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 155, no 2, p. 451-455Article in journal (Refereed)
    Abstract [en]

    Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO(2). Due to electron donation from SiC:, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned for extremely sensitive NO(2) detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n-p transition upon exposure to increasing concentrations of NO(2) indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO(2) making holes the majority carriers. (C) 2011 Elsevier B.V. All rights reserved.

  • 349.
    Gao, Xindong
    et al.
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Andersson, Joakim
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Kubart, Tomas
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Nyberg, Tomas
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Smith, Ulf
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Lu, Jun
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Kellock, Andrew J
    IBM Almaden Research Center, San Jose, California, USA .
    Zhang, Zhen
    IBM T.J. Watson Research Center, Yorktown Heights, New York , USA.
    Lavoie, Christian
    IBM T.J. Watson Research Center, Yorktown Heights, New York , USA.
    Zhang, Shi-Li
    Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
    Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness2011In: ELECTROCHEMICAL AND SOLID STATE LETTERS, ISSN 1099-0062, Vol. 14, no 7, p. H268-H270Article in journal (Refereed)
    Abstract [en]

    This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.

  • 350.
    Khatibi, Ali
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Palisaitis, Justinas
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Höglund, Carina
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eriksson, Anders
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Persson, Per O. Å.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Jensen, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Birch, Jens
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Eklund, Per
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Face-Centered Cubic (Al1-xCrx)2O32011In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 519, no 8, p. 2426-2429Article in journal (Refereed)
    Abstract [en]

    We report the discovery of a face-centered cubic (Al1−xCrx)2O3 solid solution [0.60bxb0.70] in films grownonto Si substrates using reactive radio frequency magnetron sputtering from Al and Cr targets at 400 °C. Theproposed structure is NaCl-like with 33% vacancies on the metal sites. The unit cell parameter is 4.04 Å asdetermined by X-ray diffraction. The films have a b100N preferred crystallographic orientation and exhibithardness values up to 26 GPa and an elastic modulus of 220–235 GPa.

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