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  • 401.
    Zoulis, G.
    et al.
    CNRS, Montpellier, France.
    Sun, Jianwu
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Vasiliauskas, Remigijus
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Lorenzzi, J.
    Laboratoire des Multimateriaux et Interfaces, University Claude Bernard Lyon 1, Villeurbanne, France.
    Peyre, H.
    Université Montpellier 2, France.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Ferro, G.
    Laboratoire des Multimateriaux et Interfaces, University Claude Bernard Lyon 1, Villeurbanne, France.
    Juillaguet, S.
    Université Montpellier 2, France.
    Yakimova, Rositza
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Camassel, J.
    CNRS, Montpellier, France .
    Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy2012In: HETEROSIC and WASMPE 2011 / [ed] Daniel Alquier, Trans Tech Publications Inc., 2012, Vol. 711, p. 149-153Conference paper (Refereed)
    Abstract [en]

    We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.

  • 402.
    Zoulis, Georgios
    et al.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Sun, Jian Wu
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Beshkova, Milena
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Vasiliauskas, Remigijus
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Juillaguet, S.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Peyre, H.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Yakimova, Rositsa
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Camassel, J.
    Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France.
    Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy2010In: Silicon Carbide and Related Materials 2009, 2010, Vol. 645, p. 179-182Conference paper (Refereed)
    Abstract [en]

    Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.

6789 401 - 402 of 402
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