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  • 51.
    Moskalenko, Evgenii
    et al.
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Larsson, Mats
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Verdozzi, C.
    Solid State Theory, Institute of Physics, Lund University, Lund, Sweden.
    Almbladh, C.-O.
    Solid State Theory, Institute of Physics, Lund University, Lund, Sweden.
    Schoenfeld, W. V.
    Materials Department, University of California, Santa Barbara, California.
    Petroff, P. M.
    Materials Department, University of California, Santa Barbara, California.
    Single InAs/GaAs quantum dot spectroscopy in a lateral electric fieldManuscript (preprint) (Other academic)
    Abstract [en]

    We report on the comprehensive study of InAs/GaAs single quantum dots subjected to a lateral external electric field by means of micro-photoluminescence (μ-PL) technique. The results obtained on the exciton in the μ-PL spectra of a single dot demonstrate a considerable PL intensity enhancement (up to a factor of 4) of the dot as well as a redistribution of the excitonic lines when an electric field is applied. The latter fact exhibits an effective charge reconfiguration of the dot from a purely negatively charged to a neutral state. The model proposed to explain the charge redistribution is based on an effective hole localization at the potential fluctuations of the wetting layer at low temperature and bias.

  • 52.
    Moskalenko, Evgenii
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Larsson, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Schoenfeld, W.V.
    Petroff, P.M.
    Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field2007In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 7, no 1, p. 188-193Article in journal (Refereed)
    Abstract [en]

    InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects are explained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field. © 2007 American Chemical Society.

  • 53.
    Moskalenko, Evgenii
    et al.
    Linköping University, Department of Biomedical Engineering. Linköping University, The Institute of Technology.
    Larsson, Mats
    Linköping University, Department of Biomedical Engineering. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Biomedical Engineering. Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, Department of Biomedical Engineering. Linköping University, The Institute of Technology.
    Monemar, Bo
    Linköping University, Department of Biomedical Engineering. Linköping University, The Institute of Technology.
    Schoenfeld, W.V.
    Materials Department, University of California, Santa Barbara, United States.
    Petroff, P.M.
    Materials Department, University of California, Santa Barbara, United States.
    The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots2007In: Physics of the solid state, ISSN 1063-7834, E-ISSN 1090-6460, Vol. 49, no 10, p. 1995-1998Article in journal (Refereed)
    Abstract [en]

    We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications.

  • 54.
    Moskalenko, Evgeny
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Karlsson, Fredrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Donchev, V.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Monemar, Bo
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Schoenfeld, W.V.
    Petroff, P.M.
    The considerable changes induced by an additional infrared laser on the luminescence intensity from InAs/GaAs quantum dots2004In: 27th International Conference on the Physics of Semiconductors ICPS-27,2004, 2004Conference paper (Other academic)
  • 55.
    Moskalenko, Evgeny
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Larsson, Arvid
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Larsson, Mats
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Schoenfeld, W.V.
    Petroff, P.M.
    Effective tuning of the charge state of a single InAs/GaAs quantum dot by means of external fields2008In: One Day Quantum Dot Meeting,2008, 2008Conference paper (Other academic)
12 51 - 55 of 55
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