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  • 51.
    Peng, Ru
    et al.
    Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Wang, Y D
    Studsvik Neutron Research Laboratory, Uppsala universitet, Nyköping , Sweden.
    Odén, Magnus
    Engineering Materials, Luleå University, Luleå, Sweden.
    Almer, J
    Advanced Photon Source Argonne National Laboratory, Argonne, IL, USA.
    Residual Stress Analysis in both As-deposited and Annealed CrN Coatings2005Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 490-491, s. 643-648Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper, we report on residual stress analysis in physical vapour deposited (PVD) CrN coatings. Two 9 µm thick coatings were grown on tool steel substrates with bias voltages of - 50 V and -300 V, respectively. High-energy (E=80 keV) synchrotron radiation measurements have been performed to investigate residual stresses in both as-deposited and annealed CrN coatings. To understand the origins of non-linear distribution of lattice strain versus sin2ψ for certain (hkl) planes in both coatings, a stress orientation distribution function (SODF) analysis has been carried out, which yields grain-orientation-dependent residual stresses. The results are compared to previous analyses using Reuss and Vook-Witt models on the as-deposited coatings.

  • 52.
    Persson, Per
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Growth evolution of dislocation loops in ion implanted 4H-SiC2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 353-3, s. 315-318Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Transmission electron microscopy (TEM) was used to investigate Al ion-implanted 4H-SiC epilayers. A set of annealing experiments were performed to study the evolution of dislocation loops in the implanted region. It was concluded that the dislocation loops evolve according to the extended Ostwald ripening model for small planar precipitates. The activation energy for loop growth was determined to be 2.8 eV.

  • 53. Pons, M.
    et al.
    Blanquet, E.
    Dedulle, J.M.
    Wellmann, P.
    Danielsson, Örjan
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska högskolan.
    Ferret, P.
    di Cioccio, L.
    Baillet, F.
    Chaussende, D.
    Madar, R.
    Progress and limits of the numerical simulation of SiC bulk and epitaxial growth processes2005Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 483-485Artikkel i tidsskrift (Fagfellevurdert)
  • 54.
    Puglisi, Donatella
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten.
    Eriksson, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten.
    Andersson, Mike
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten. Microelectronics and Material Physics Laboratories, University of Oulu, Finland.
    Huotari, Joni
    Microelectronics and Material Physics Laboratories, University of Oulu, Finland.
    Bastuck, Manuel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten. Lab for Measurement Technology, Saarland University, Saarbruecken, Germany.
    Bur, Christian
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten. Lab for Measurement Technology, Saarland University, Saarbruecken, Germany.
    Lappalainen, Jyrki
    Microelectronics and Material Physics Laboratories, University of Oulu, Finland.
    Schuetze, Andreas
    Lab for Measurement Technology, Saarland University, Germany.
    Lloyd Spetz, Anita
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska fakulteten. Microelectronics and Material Physics Laboratories, University of Oulu, Finland.
    Exploring the gas sensing performance of catalytic metal/ metal oxide 4H-SiC field effect transistors2016Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 858, s. 997-1000Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Gas sensitive metal/metal-oxide field effect transistors based on silicon carbide were used to study the sensor response to benzene (C6H6) at the low parts per billion (ppb) concentration range. A combination of iridium and tungsten trioxide was used to develop the sensing layer. Highsensitivity to 10 ppb C6H6 was demonstrated during several repeated measurements at a constant temperature from 180 to 300 °C. The sensor performance was studied also as a function of the electrical operating point of the device, i.e., linear, onset of saturation, and saturation mode. Measurements performed in saturation mode gave a sensor response up to 52 % higher than those performed in linear mode.

  • 55.
    Puglisi, Donatella
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
    Eriksson, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
    Bur, Christian
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan. Saarland University, Saarbruecken, Germany.
    Schuetze, Andreas
    Saarland University, Saarbruecken, Germany.
    Lloyd Spetz, Anita
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
    Andersson, Mike
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad sensorvetenskap. Linköpings universitet, Tekniska högskolan.
    Silicon carbide field effect transistors for detection of ultra-low concentrations of hazardous volatile organic compounds2014Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, s. 1067-1070Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layershave been used for the first time for sensitive detection of volatile organic compounds (VOCs) atpart per billion level, for indoor air quality applications. Formaldehyde, naphthalene, and benzenehave been used as typical VOCs in dry air and under 10% and 20% relative humidity. A singleVOC was used at a time to study long-term stability, repeatability, temperature dependence, effectof relative humidity, sensitivity, response and recovery times of the sensors.

  • 56.
    Puglisi, Donatella
    et al.
    University of Catania, Italy.
    Foti, Gaetano
    University of Catania, Italy.
    Bertuccio, Giuseppe
    Politecnico di Milano, Como Campus, Italy.
    Diffusion Length in n-doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe2009Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 615-617, s. 857-860Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The achievement of nuclear detectors in silicon carbide imposes severe constraints onthe electronic quality and thickness of the material due to the relatively high value of the energyrequired to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers ofn-type doping as active region. The thickness of the epilayer is always below 80 μm with a netdoping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabricationof Schottky diodes that operate well as radiation detectors. At low doping concentration, theepilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximumactive volume.

  • 57.
    Rankl, Dominik
    et al.
    Crystal Growth Lab, University of Erlangen.
    Jokubavicius, Valdas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Syväjärvi, Mikael
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Wellmann, Peter
    Crystal Growth Lab, University of Erlangen.
    Quantitative Study on the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm diameter 3C-SiC2015Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821, s. 77-80Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

  • 58.
    Robbie, K
    et al.
    Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden.
    Jemander, ST
    Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden.
    Lin, N
    Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden.
    Hallin, Christer
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Erlandsson, Ragnar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Hansson, Göran
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Yt- och Halvledarfysik.
    Madsen, LD
    Linkoping Univ, Dept Phys, SE-58183 Linkoping, Sweden.
    Study of contact formation by high temperature deposition of Ni on SiC2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 981-984Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We report the observation, by scanning tunneling microscopy (STM), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and atomic force microscopy (AFM), of island formation on SIC during high temperature deposition and annealing of thin Ni films. Ni films with a nominal thickness of 2.5 monolayers were sputter deposited onto H-2-etched single crystal 6H-SiC (0001) substrates heated to 600 degreesC in an ultrahigh vacuum STM system. After the substrates were annealed to 800-1000 degreesC, island formation was observed by STM. The islands were 0.1-0.5 mum in diameter, similar to 30 nm high, and separated by similar to2 mum from each other, with an exceptionally flat top with a peculiar 'stitched' surface structure. A second type of island, similar to1.5 mum in diameter, similar to 10 nm high, and separated by similar to 10 mum from each other, was observed by ex situ AFM and SEM. Microspot AES showed that the first islands are composed of Ni and C, while the second islands are composed of Ni, C, and Si. AES lineshape studies showed that the carbon in both types of islands is graphitically bound as opposed to the carbon in the substrate which is carbidically bound. From comparisons to literature, we believe that the first islands are a new type of graphite intercalation compound. An indexing of Ni on the top graphite sheets is presented for each anneal temperature.

  • 59.
    Sadrossadat, Mohsen
    et al.
    Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Johansson, Sten
    Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    The effects of solidification conditions and heat treatment on the microstructure and mechanical properties of EN-AC 44400 alloy2010Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 649, s. 505-510Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Improved mechanical and physical properties of an Al-Si alloy as a well-known casting alloy is strongly dependent upon the morphology of silicon particles, Al grains and also type of intermetallics which are in turn a function of alloy composition, solidification rate and heat treatment. This study aims at investigating the influence of the different solidification conditions (high pressure die, gradient and sand cast) and heat treatment on the microstructure (dendrite parameters, silicon particle morphology, intermetallic compounds), mechanical properties and fracture surface appearance of Al- 9Si- 4Mn alloy. To identify the features of microstructure and fracture surface analysis, a combination of optical metallography, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) have been employed. The results show that the cooling rate has a strong effect on the evolution of intermetallics, morphology of the silicon and dendrite parameters.

  • 60.
    Sadrossadat, Mohsen
    et al.
    Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Johansson, Sten
    Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    The influence of casting geometry on the tensile properties and residual stresses in aluminium castings2010Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 652, s. 174-179Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The soundness and the performance of castings are significantly affected by generation and accumulation of residual stresses. This has been proven that mechanical properties and residual stresses level of the casting components are affected by thermal gradient across the casting component during cooling and some intrinsic physical properties of the material. In the present work, microstructural development, mechanical properties, residual stress evolution and cooling curves associated with different legs of a mixed–section grid castings have been investigated employing scanning electron microscope, optical microscope, 3D measurement equipment, computerized thermal data acquisition instrument and tensile testing machine. Experimental results show that the accumulated residual stress in circular, triangular and rectangular grid shapes is increasing respectively. From the results it can be seen that there are clear influences of grid’s geometry on the microstructure and mechanical properties. The geometrical stiffness can affect a lot the residual stress level and the casting modulus has a big influence on the microstructure and mechanical properties.

  • 61.
    Savage, S
    et al.
    ACREO AB, SE-16440 Kista, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Svenningstorp, H
    ACREO AB, SE-16440 Kista, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Unéus, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Kroutchinine, A
    ACREO AB, SE-16440 Kista, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Tobias, P
    ACREO AB, SE-16440 Kista, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Ekedahl, Lars-Gunnar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Lundström, Ingemar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Harris, C
    ACREO AB, SE-16440 Kista, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Lloyd-Spets, Anita
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    SiC based gas sensors and their applications2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 353-3, s. 747-752Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The development and field-testing of hardy high-temperature sensors based on silicon carbide devices has to date shown promising results in several application areas. As the need to take care of the environment becomes more urgent, these small and relatively cheap sensors could be used to increase the monitoring of gases, or to replace or complement larger and more expensive sensor technologies used today. In this paper the development of Silicon Carbide MOSFET transistor sensors and Schottky diode sensors is described. The devices are tested in industrial applications such as monitoring of car exhausts and flue gases.

  • 62.
    Schlauer, Christian
    et al.
    Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Peng, Ru
    Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Odén, Magnus
    Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Residual Stresses in a Nickel-based Superalloy Introduced by Turning2002Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 404-407, s. 173-178Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Near-surface residual stress distributions in the nickel-based superalloy Inconel 718 that originate from the machining operation turning are studied. The turning process that is used in the experiments is face grooving which gives quasi-orthogonal cutting conditions. Cutting speed and feed have been varied to investigate their effects on the residual stress state. Tensile residual stresses with a maximum of 1300 MPa were found at the surface that turn rapidly into compressive residual stresses of up to -800 MPa. The depth distributions of the residual stresses are presented and discussed with respect to observations made by optical and transmission electron microscopy.

  • 63.
    Seppänen, Timo
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Radnoczi, GZ
    Tungasmita, Sukkaneste
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Birch, Jens
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering2002Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-4, s. 987-990Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Ternary Al1-xInxN thin films were grown by dual target direct current (DC) reactive magnetron sputtering under UHV conditions. The film compositions were determined to range from 0.30

  • 64.
    Sjöström, Per
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial.
    Johansson, Sten
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för konstruktions- och produktionsteknik, Konstruktionsmaterial.
    Residual Stress Relaxation During Fatigue of Clinched Joints in Stainless Steels2005Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 490-491, s. 404-408Artikkel i tidsskrift (Fagfellevurdert)
  • 65.
    Staab, TEM
    et al.
    Helsinki Univ Technol, Phys Lab, FI-02015 Helsinki, Finland Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
    Torpo, LM
    Helsinki Univ Technol, Phys Lab, FI-02015 Helsinki, Finland Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
    Puska, MJ
    Helsinki Univ Technol, Phys Lab, FI-02015 Helsinki, Finland Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
    Nieminen, RM
    Helsinki Univ Technol, Phys Lab, FI-02015 Helsinki, Finland Linkoping Univ, IFM, SE-58183 Linkoping, Sweden.
    Calculated positron annihilation parameters for defects in SiC2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 353-3, s. 533-536Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We calculate positron annihilation parameters (lifetime and high momentum part of the Doppler broadening of the annihilation radiation) for different native defects in 4H-SiC. To figure out the influence of lattice relaxations, we consider atomic coordinates in the ideal lattice as well as those determined as minimum energy structures from ab-initio calculations. We then compare the calculated annihilation parameters to experimental data on irradiated bulk SiC, where vacancies in different sublattices can be identified. If we qualitatively take into account the influence of the trapped positron on the relaxation pattern, we find good agreement with experimental data.

  • 66.
    Svenningstorp, H
    et al.
    Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Unéus, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Tobias, P
    Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden.
    Lundström, Ingemar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Ekedahl, Lars-Gunnar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Lloyd-Spets, Anita
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    High temperature gas sensors based on catalytic metal field effect transistors2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1435-1438Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Catalytic metal insulator silicon carbide field effect devices, MISiCFET, have been developed as gas sensitive devices. They functioned in a corrosive atmosphere of hydrogen / oxygen alternating pulses up to 775 degreesC. At 600 degreesC some devices operated with full gas response to hydrogen for 17 hours. Below a temperature of 500 degreesC the gas response of the devices was very stable with no base line drift for several days. MISiC Schottky diodes have been used for cylinder specific monitoring of an engine and exhausts and flue gas diagnosis. The MISiCFET devices will increase the number of possible applications for FET gas sensor devices.

  • 67.
    Terner, Mark R.
    et al.
    Luleå University of Technology.
    Hedström, Peter
    Luleå University of Technology.
    Almer, J.
    Argonne National Laboratory, USA.
    Ilavsky, J.
    Argonne National Laboratory, USA.
    Odén, Magnus
    Luleå University of Technology.
    Residual stress evolution during decomposition of Ti((1-x))Al((x))N coatings using high-energy x-rays2006Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 524-525, s. 619-624Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Residual stresses and microstructural changes during phase separation in Ti33Al67N coatings were examined using microfocused high energy x-rays from a synchrotron source. The transmission geometry allowed simultaneous acquisition of x-ray diffraction data over 360 degrees and revealed that the decomposition at elevated temperatures occurred anisotropically, initiating preferentially along the film plane. The as-deposited compressive residual stress in the film plane first relaxed with annealing, before dramatically increasing concurrently with the initial stage of phase separation where metastable, nm-scale c-AlN platelets precipitated along the film direction. These findings were further supported from SAXS analyses.

  • 68.
    Tungasmita, Sukkaneste
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Persson, Per
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Järrendahl, Kenneth
    Linköpings universitet, Tekniska högskolan.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Birch, Jens
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Low-energy-ion-assisted reactive sputter deposition of epitaxial AlN thin films on 6H-SiC2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1519-1522Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Epitaxial wurzite-structure AIN thin films have been grown on 6H-SiC substrates by ultra-high-vacuum (UHV) low-energy-ion-assisted reactive de magnetron sputtering. The quality of epitaxial AIN films is significantly improved by low-energy ion assistance (E-i = 17-27 eV), during reactive magnetron sputter growth on vicinal (3.5 degrees) 6H-SiC. The ion-assisted growth results in an increased surface mobility, which promotes domain boundary annihilation and epitaxial growth. This results in lateral expansion of column width. Thus, AIN films with domains as large as 40 nm at the interface to 6H-SiC can be realized. At film thickness above 100 nm, the column width expands to 100 nm. The crystal quality of the films is very good with low background impurities (O: 3.5x10 (18)cm(-3)).

  • 69.
    Tungasmita, Sukkaneste
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Persson, Per
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Seppänen, Timo
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Hultman, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Birch, Jens
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik.
    Growth of epitaxial (SiC)(x)(AlN)(1-x) thin films on 6H-SiC by ion-assisted dual magnetron sputter deposition2002Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 389-3, s. 1481-1484Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    (SiC)(X)(AIN)(1-X) thin films have been grown epitaxially on vicinal 6H-SiC (0001) by low-energy ion assisted dual magnetron sputtering in UHV conditions. AES showed a decreasing Si and C content for an increasing magnetron power ratio, (P-Al/P-SiC). The epitaxial quality of the films was improved as the SiC fraction increased. Films containing less than 5% of Si and C show an evolution of domain width similar to the growth of pure AIN. HRXRD show a decreased c-axis lattice parameter for a film with composition of AINC(X) (0less than or equal toxless than or equal to0.1), indicating carbon substitution in AIN. CL spectra show defect-related peaks of similar to3.87 and similar to4.70 eV, corresponding to O and C impurities respectively as well as on un-identified peak at similar to3.40 eV.

  • 70.
    Wang, Yandong
    et al.
    Key Lab for Anisotropy & Texture of Mater., Northeastern Univ., Shenyang, China.
    Peng, Ru
    Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial. Linköpings universitet, Tekniska högskolan.
    Zeng, X H
    Studsvik Neutron Research Laboratory, Uppsala University.
    McGreevy, R
    Studsvik Neutron Research Laboratory, Uppsala University.
    Stress-Orientation Distribution Function (SODF) - Description, Symmetry and Determination2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 347-349, s. 66-71Artikkel i tidsskrift (Fagfellevurdert)
  • 71.
    Wang, YD
    et al.
    Uppsala Univ, Studsvik Neutron Res Lab, SE-61182 Nykoping, Sweden Linkoping Univ, Dept Engn Mech, SE-58183 Linkoping, Sweden.
    Peng, Ru
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för ekonomisk och industriell utveckling, Konstruktionsmaterial.
    Zeng, XH
    Uppsala Univ, Studsvik Neutron Res Lab, SE-61182 Nykoping, Sweden Linkoping Univ, Dept Engn Mech, SE-58183 Linkoping, Sweden.
    McGreevy, R
    Uppsala Univ, Studsvik Neutron Res Lab, SE-61182 Nykoping, Sweden Linkoping Univ, Dept Engn Mech, SE-58183 Linkoping, Sweden.
    Stress-orientation distribution function (SODF) - Description, symmetry and determination2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 347-3, s. 66-71Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper, a stress-orientation distribution function (SODF) is defined to describe statistically the distribution of the stress state of grains as a function of crystal orientation. Similar to the crystal orientation distribution function (CODF), the SODF may be expressed as generalized spherical harmonics. The two symmetry groups existing in the SODF, namely the crystal symmetry and the sample symmetry, are discussed. A method to construct the SODF directly from neutron or X-ray diffraction data is described, Finally, the validity of the method is demonstrated by stress analysis of simulated strain distributions in an austenitic stainless steel under tensile loading.

  • 72.
    Wessén, Magnus
    et al.
    Div Component Technology, Jönköping University, Jönköping, Sweden.
    Cao, Haiping
    Div Component Technology, Jönköping University, Jönköping, Sweden.
    The effect of mould constraints on the 0.2% proof stress of as-cast Mg-Al alloys2005Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 488-489, s. 165-168Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    When a casting solidifies and cools down in a metallic mould, stresses and strains develop as a result of uneven temperature distributions, metal shrinkage and mould constraints. At ejection from the mould, the casting usually springs back slightly when the elastic part of the strain is released. However, due to the low flow stress at high temperatures it is likely that the casting also has experienced some plastic deformations, meaning that the dislocation density has increased. This paper discusses how the existence of remaining plastic deformations affects the initial flow behavior and the yield strength during tensile testing of as cast Mg-Al alloys with different degrees of mould constraints.

  • 73.
    Wingbrant, Helena
    et al.
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Unéus, Lars
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Andersson, M
    Cerda, J
    Savage, S
    Svenningstorp, H
    Salomonsson, P
    Ljung, P
    Mattsson, M
    Visser, JH
    Kubinski, D
    Soltis, R
    Ejakov, SG
    Moldin, D
    Löfdahl, Mikael
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi.
    Einehag, M
    Persson, M
    Lloyd-Spets, Anita
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    MISiCFET chemical sensors for applications in exhaust gases and flue gases2002Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-4, s. 953-956Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A chemical gas sensor based on a silicon carbide field effect transistor with a catalytic gate metal has been under development for a number of years. The choice of silicon carbide as the semiconductor material allows the sensor to operate at high temperatures, for more than 6 months in flue gases at 300degreesC and for at least three days at 700degreesC. The chemical inertness of silicon carbide and a buried gate design makes it a suitable sensor technology for applications in corrosive environments such as exhaust gases and flue gases from boilers. The selectivity of the sensor devices is established through the choice of type and structure of the gate metal as well as the operation temperature. In this way NH3 sensors with low cross sensitivity to NOx have been demonstrated as potential sensors for control of selective catalytic reduction (SCR) of NOx by urea injection into diesel exhausts. Here we show that sensors with a porous platinum or iridium gate show different temperature ranges for NH3 detection. The hardness of the silicon carbide makes it for example more resistant to water splash at cold start of a petrol engine than existing technologies, and a sensor which can control the air to fuel ratio, before the exhaust gases are heated, has been demonstrated. Silicon carbide sensors are also tested in flue gases from boilers. Efficient regulation of the combustion in a boiler will decrease fuel consumption and reduce emissions.

  • 74.
    Zangooie, S
    et al.
    Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, Lab Appl Opt, SE-58183 Linkoping, Sweden.
    Arwin, Hans
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad optik.
    Lundström, Ingemar
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Lloyd-Spets, Anita
    Linköpings universitet, Tekniska högskolan. Linköpings universitet, Institutionen för fysik, kemi och biologi, Tillämpad Fysik.
    Ozone treatment of SiC for improved performance of gas sensitive Schottky diodes2000Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-3, s. 1085-1088Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Schottky diodes with catalytic metal gates fabricated on SiC are suitable for sensing of hydrogen containing gases. The device performance, including reproducibility and long term stability, is improved by including an ozone treatment in the device processing. In this investigation, the properties of the oxide layer formed on 4H SiC by such ozone treatment are studied with spectroscopic ellipsometry. It was found that both the oxide thickness and its properties are different compared to those for a native oxide formed without ozone treatment.

  • 75.
    Zhao, Qing Xiang
    et al.
    Chalmers University of Technology.
    Willander, Magnus
    Chalmers University of Technology.
    Terahertz semiconductor laser structures2002Inngår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 384-3, s. 197-204Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this paper, we theoretically examine the possible quantum well structures that may fulfill the criterion to achieve a terahertz (THz) laser devices. Our calculations are based on well-developed effective-mass theory that accounts for valence-band mixing as well as the mismatch of band parameters and dielectric constants between well and barrier materials. The advantage of the model is that the ground and excited states of acceptors confined in strained quantum well structures can be calculated. Therefore, by calculating the splitting of the acceptor ground states in strained InxGa1-xAs/GaAs and Si1-xGex/Si quantum well structures versus well widths and alloy concentrations, our results provide a guiding to design the structures that inky be suitable for realizing THz stimulated emissions in a range between 2 and 8 THz.

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