High power impulse magnetron sputtering (HiPIMS) discharges with a zirconium target are studied experimentally and by applying the ionization region model (IRM). The measured ionized flux fraction lies in the range between 25% and 59% and increases with increased peak discharge current density ranging from 0.5 to 2 A/cm(2) at a working gas pressure of 1 Pa. At the same time, the sputter rate-normalized deposition rate determined by the IRM decreases in accordance with the HiPIMS compromise. For a given discharge current and voltage waveform, using the measured ionized flux fraction to lock the model, the IRM provides the temporal variation of the various species and the average electron energy within the ionization region, as well as internal discharge parameters such as the ionization probability and the back-attraction probability of the sputtered species. The ionization probability is found to be in the range 73%-91%, and the back-attraction probability is in the range 67%-77%. Significant working gas rarefaction is observed in these discharges. The degree of working gas rarefaction is in the range 45%-85%, higher for low pressure and higher peak discharge current density. We find electron impact ionization to be the main contributor to working gas rarefaction, with over 80% contribution, while kick-out by zirconium atoms and argon atoms from the target has a smaller contribution. The dominating contribution of electron impact ionization to working gas rarefaction is very similar to other low sputter yield materials.

The ionization region model (IRM) is applied to explore working gas rarefaction in high power impulse magnetron sputtering discharges operated with graphite, aluminum, copper, titanium, zirconium, and tungsten targets. For all cases the working gas rarefaction is found to be significant, the degree of working gas rarefaction reaches values of up to 83%. The various contributions to working gas rarefaction, including electron impact ionization, kick-out by the sputtered species or hot argon atoms, and diffusion, are evaluated and compared for the different target materials, and over a range of discharge current densities. The relative importance of the various processes varies between different target materials. In the case of a graphite target with argon as the working gas at 1 Pa, electron impact ionization (by both primary and secondary electrons) is the dominating contributor to working gas rarefaction, with over 90% contribution, while the contribution of sputter wind kick-out is small %. In the case of copper and tungsten targets, the kick-out dominates, with up to similar to 60% contribution at 1 Pa. For metallic targets the kick-out is mainly due to metal atoms sputtered from the target, while for the graphite target the small kick-out contribution is mainly due to kick-out by hot argon atoms and to a smaller extent by carbon atoms. The main factors determining the relative contribution of the kick-out by the sputtered species to working gas rarefaction appear to be the sputter yield and the working gas pressure.

The angular dependence of the deposition rates due to ions and neutrals in high-power impulse magnetron sputtering (HiPIMS) discharges with a titanium target were determined experimentally using a magnetically shielded and charge-selective quartz crystal microbalance (or ionmeter). These rates have been established as a function of the argon working gas pressure, the peak discharge current density, and the pulse length. For all explored cases, the total deposition rate exhibits a heart-shaped profile and the ionized flux fraction peaks on the discharge axis normal to the cathode target surface. This heart-shaped pattern is found to be amplified at increasing current densities and reduced at increased working gas pressures. Furthermore, it is confirmed that a low working gas pressure is beneficial for achieving high deposition rates and high ionized flux fractions in HiPIMS operation.

Here, we compare the ionization region model (IRM) against experimental measurements of particle densities and electron temperature in a high power impulse magnetron sputtering discharge with a tungsten target. The semi-empirical model provides volume-averaged temporal variations of the various species densities as well as the electron energy for a particular cathode target material, when given the measured discharge current and voltage waveforms. The model results are compared to the temporal evolution of the electron density and the electron temperature determined by Thomson scattering measurements and the temporal evolution of the relative neutral and ion densities determined by optical emission spectrometry. While the model underestimates the electron density and overestimates the electron temperature, the temporal trends of the species densities and the electron temperature are well captured by the IRM.

The influence of pulse length, working gas pressure, and peak discharge current density on the deposition rate and ionised flux fraction in high power impulse magnetron sputtering discharges of copper is investigated experimentally using a charge-selective (electrically biasable) magnetically shielded quartz crystal microbalance (or ionmeter). The large explored parameter space covers both common process conditions and extreme cases. The measured ionised flux fraction for copper is found to be in the range from approximate to 10% to 80%, and to increase with increasing peak discharge current density up to a maximum at approximate to 1.25Acm-2 , before abruptly falling off at even higher current density values. Low working gas pressure is shown to be beneficial in terms of both ionised flux fraction and deposition rate fraction. For example, decreasing the working gas pressure from 1.0 Pa to 0.5 Pa leads on average to an increase of the ionised flux fraction by approximate to 14 percentage points (pp) and of the deposition rate fraction by approximate to 4pp taking into account all the investigated pulse lengths.

In magnetron sputtering, only a fraction of the sputtered target material leaving the ionization region is directed toward the substrate. This fraction may be different for ions and neutrals of the target material as the neutrals and ions can exhibit a different spread as they travel from the target surface toward the substrate. This difference can be significant in high power impulse magnetron sputtering (HiPIMS) where a substantial fraction of the sputtered material is known to be ionized. Geometrical factors or transport parameters that account for the loss of produced film-forming species to the chamber walls are needed for experimental characterization and modeling of the magnetron sputtering discharge. Here, we experimentally determine transport parameters for ions and neutral atoms in a HiPIMS discharge with a titanium target for various magnet configurations. Transport parameters are determined to a typical substrate, with the same diameter (100 mm) as the cathode target, and located at a distance 70 mm from the target surface. As the magnet configuration and/or the discharge current are changed, the transport parameter for neutral atoms xi(tn) remains roughly the same, while transport parameters for ions xi(ti) vary greatly. Furthermore, the relative ion-to-neutral transport factors, xi(ti)/xi(tn), that describe the relative deposited fractions of target material ions and neutrals onto the substrate, are determined to be in the range from 0.4 to 1.1.

The ionization region model (IRM) is applied to model high power impulse magnetron sputtering (HiPIMS) discharges with a Cu target. We apply the model to three discharges that were experimentally explored in the past, or applied to deposit thin copper films, with the aim to quantify internal plasma process parameters and thereby understand how these discharges differ from each other. The temporal variation of the various neutral and ionic species, the electron density and temperature, as well as internal discharge parameters, such as the ionization probability, back attraction probability, and ionized flux fraction of the sputtered species, are determined. We demonstrate that the Cu+ ions dominate the total ion current to the target surface and that all the discharges are dominated by self-sputter recycling to reach high discharge currents. Furthermore, the ion flux into the diffusion region is dominated by Cu+ ions, which represents roughly 80% of the total ion flux onto the substrate, in agreement with experimental findings. For the discharges operated with peak discharge current densities in the range 0.9 - 1.3 A cm-2, the ion back-attraction probability of the Cu+ ion (beta t) is low compared to previously investigated HiPIMS discharges, or in the range 44 - 50%, while the ionization probability (alpha t) is in the range 61 - 69%, and the ionized flux fraction is in the range 32 - 40%. It is, furthermore, found that operating these Cu HiPIMS discharges at lower working gas pressures (in the present case around 0.5 Pa) is beneficial in terms of optimizing ionization of the sputtered species.

The ionization region model (IRM) is applied to model a high power impulse magnetron sputtering discharge with a tungsten target. The IRM gives the temporal variation of the various species and the average electron energy, as well as internal discharge parameters such as the ionization probability and the back-attraction probability of the sputtered species. It is shown that an initial peak in the discharge current is due to argon ions bombarding the cathode target. After the initial peak, the W+ ions become the dominating ions and remain as such to the end of the pulse. We demonstrate how the contribution of the W+ ions to the total discharge current at the target surface increases with increased discharge voltage for peak discharge current densities J (D,peak) in the range 0.33-0.73 A cm(-2). For the sputtered tungsten the ionization probability increases, while the back-attraction probability decreases with increasing discharge voltage. Furthermore, we discuss the findings in terms of the generalized recycling model and compare to experimentally determined deposition rates and find good agreement.

Magnetron sputtering combines a glow discharge with sputtering from a target that simultaneously serves as a cathode for the discharge. The electrons of the discharge are confined between overarching magnetic field lines and the negatively biased cathode. As the target erodes during the sputter process, the magnetic field strengthens in the cathode vicinity, which can influence discharge parameters with the risk of impairing reproducibility of the deposition process over time. This is of particular concern for high-power impulse magnetron sputtering (HiPIMS) as the discharge current and voltage waveforms vary strongly with the magnetic field strength. We here discuss ways to limit the detrimental effect of target erosion on the film deposition process by choosing an appropriate mode of operation for the discharge. The goal is to limit variations of two principal flux parameters, the deposition rate and the ionized flux fraction. As an outcome of the discussion, we recommend operating HiPIMS discharges by maintaining the peak discharge current constant.