Intercalated layered materials offer distinctive properties and serve as precursors for important two-dimensional (2D) materials. However, intercalation of non-van der Waals structures, which can expand the family of 2D materials, is difficult. We report a structural editing protocol for layered carbides (MAX phases) and their 2D derivatives (MXenes). Gap-opening and species-intercalating stages were respectively mediated by chemical scissors and intercalants, which created a large family of MAX phases with unconventional elements and structures, as well as MXenes with versatile terminals. The removal of terminals in MXenes with metal scissors and then the stitching of 2D carbide nanosheets with atom intercalation leads to the reconstruction of MAX phases and a family of metal-intercalated 2D carbides, both of which may drive advances in fields ranging from energy to printed electronics.

Out-of-plane chemically ordered transitionmetal boride(o-MAB) phases, Ta4M & DPRIME;SiB2 (M & DPRIME; = V, Cr), and a structurally equivalent disordered solidsolution MAB phase, Ta4MoSiB2, are synthesized.DFT calculations are used to examine the dynamic stability, elasticproperties, and electronic density states of the MAB phases. We report on the synthesis of computationally predictedout-of-planechemically ordered transition metal borides labeled o-MAB phases, Ta4M & DPRIME;SiB2 (M & DPRIME; =V, Cr), and a structurally equivalent disordered solid solution MABphase Ta4MoSiB2. The boride phases were preparedusing solid-state reaction sintering of the constituting elements.High-resolution scanning transmission electron microscopy along withRietveld refinement of the powder-X-ray diffraction patterns revealedthat the synthesized o-MAB phases Ta4CrSiB2 (98 wt % purity) and Ta4VSiB2 (81 wt% purity) possess chemical ordering with Ta preferentially residingin the 16l position and Cr and V in the 4c position, whereas Ta4MoSiB2 (46wt % purity) was concluded to form a disordered solid solution. Densityfunctional theory (DFT) calculations were used to investigate thedynamic stability, elastic properties, and electronic density statesfor the MAB phases, confirming the stability and suggesting the boridesbased on Cr and Mo to be stiffer than those based on V and Nb.

Decreasing the growth temperature to lower energy consumption and enable deposition on temperature-sensitive substrates during thin film growth by magnetron sputtering is crucial for sustainable develop-ment. High-mass metal ion irradiation of the growing film surface with ion energy controlled by metal-ion-synchronized biasing, allows to replace conventionally-used resistive heating, as was recently demonstrated in experiments involving a hybrid high-power impulse and dc magnetron co-sputtering (HiPIMS/DCMS) setup and stationary substrates. Here, we report the extension of the method to indus-trial scale conditions. As a model-case towards understanding the role of one-fold substrate rotation on Ti0.50Al0.50N film growth employing W irradiation, we investigate the effect of two parameters: W ion energy (controlled in the range 45 <= EW <= 630 eV by the amplitude of synchronized substrate bias voltage) and W ion dose per deposited metal atom (determined by the target power). We show that the efficient densification of coatings grown without external heating can be achieved by minimizing the thickness of DCMS-deposited Ti0.50Al0.50N layer that is exposed to an W ion flux, or by increasing EW, at a given Ti0.50Al0.50N thickness.(c) 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).

The development of abundant, cheap, and highly active catalysts for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) is important for hydrogen production. Nanolaminate ternary transition metal carbides (MAX phases) and their derived two-dimensional transition metal carbides (MXenes) have attracted considerable interest for electrocatalyst applications. Herein, four new MAX@MXene core-shell structures (Ta2CoC@ Ta2CTx, Ta2NiC@Ta2CTx, Nb2CoC@Nb2CTx, and Nb2NiC@Nb2CTx), in which the core region is Co/Ni-MAX phases while the edge region is MXenes, have been prepared. Under alkaline electrolyte conditions, the Ta2CoC@Ta2CTx core-shell structure showed an overpotential of 239 mV and excellent stability during the HER with MXenes as the active sites. For the OER, the Ta2CoC@Ta2CTx core- shell structure showed an overpotential of 373 mV and a small Tafel plot (56 mV dec-1), which maintained a bulk crystalline structure and generated Co-based oxyhydroxides that formed by surface reconstruction as active sites. Considering rich chemical compositions and structures of MAX phases, this work provides a new strategy for designing multifunctional electrocatalysts and also paves the way for further development of MAX phase-based materials for clean energy applications.

Controlling nanoporosity to favorably alter multiple properties in layered crystalline inorganic thin films is a challenge. Here, we demonstrate that the thermoelectric and mechanical properties of Ca3Co4O9 films can be engineered through nanoporosity control by annealing multiple Ca(OH)(2)/Co3O4 reactant bilayers with characteristic bilayer thicknesses (b(t)). Our results show that doubling b(t), e.g., from 12 to 26 nm, more than triples the average pore size from similar to 120 nm to similar to 400 nm and increases the pore fraction from 3% to 17.1%. The higher porosity film exhibits not only a 50% higher electrical conductivity of sigma similar to 90 S cm(-1) and a high Seebeck coefficient of alpha similar to 135 mu V K-1, but also a thermal conductivity as low as kappa similar to 0.87 W m(-1) K-1. The nanoporous Ca3Co4O9 films exhibit greater mechanical compliance and resilience to bending than the bulk. These results indicate that annealing reactant multilayers with controlled thicknesses is an attractive way to engineer nanoporosity and realize mechanically flexible oxide-based thermoelectric materials.

Grain refinement plays a central role in powder bed fusion (PBF) additive manufacturing by preventing hot cracking and thus enabling the development of high-strength alloys. However, the mechanism behind grain refinement is not fully understood for conventional casting, nor for PBF. In this work, a high throughput method have been used to produce Al-2 wt%Cu alloys with additions of Ti1-xM(Zr,Ta,V,W)(x)B-2, Al3Ti1-xM(Zr,V)(x) or AlB2 grain refiners for 0.1 < x < 0.9. It was found that grain size varied with x, M and the sum of Ti + M. Ti1-xMxB2 grain refiners offered no advantage over Al3Ti1-xMx. Overall, Ti and Zr provide the best grain refinement, both as Ti1-xMxB2 and Al3Ti1-xMx. However, Ti1-xZrxB2 had a grain refinement minimum around x = 0.65-0.70. The behavior was similar with Ta, but to a lesser extent. V and W had detrimental effects on grain refinement. Despite the fact that no AlB2 particles were observed, additions of B provided excellent grain refinement and was more efficient than Ti below 0.5at%. Ti1-xMxB2 lattice parameters varied with x and followed Vegards law, however, a clear relationship between grain size and epitaxial strain/lattice match could not be established. Similarly, the growth restricting factor alone was not a predictor of grain size.

Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local comelting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local comelting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

Controllable engineering of the nanoporosity in layered Ca3Co4O9 remains a challenge. Here, we show the synthesis of discontinuous films with islands of highly textured Ca3Co4O9, effectively constituting distributed nanoparticles with controlled porosity and morphology. These discontinuously dispersed textured Ca3Co4O9 nanoparticles may be a candidate for hybrid thermoelectrics.

Cr-N based materials, including stoichiometric CrN and Cr:N with a wide range of nitrogen contents, are commonly used as hard and corrosion-resistant coatings. Cr-rich films in this materials system can retain the bcc structure of metallic Cr with few percent of dissolved nitrogen, which can be used for tailoring the mechanical, thermal, and electrical properties. Here, we investigated low nitrogen containing Cr thin films deposited by high ion assisted magnetron sputtering with a substrate temperature of 200 degrees C. With the gas flow ratio maintained at f(N2/Ar) = 0.02, the substrate bias and the target power allows for control of the film composition (0.03 < N/Cr < 0.34). The films comprise a mixture of bcc-Cr and hexagonal Cr2N1-delta phases. The mechanical properties studied by nanoindentation and Brillouin inelastic light scattering revealed a hardening effect due to the multiphase nanostructure. The mechanical properties of the Cr:N films depend on the residual stress, on the amount of h-Cr2N1-delta phase and on the nanostructuring nature of the coatings. A maximum hardness of 37 GPa was achieved for a dense film with a Youngs modulus of 340 GPa, a shear modulus of 118 GPa, and a relatively low thermal conductivity of 7 W/mK.

There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti_0.67Hf_0.33B_1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB₂-HiPIMS/TiB₂-DCMS) in pure Ar on Al₂O₃(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf⁺) irradiation promoting the growth of dense Ti_0.67Hf_0.33B_1.7.

MAX phases are gaining attention as precursors of two-dimensional MXenes that are intensively pursued in applications for electrochemical energy storage. Here, we report the preparation of V2SnC MAX phase by the molten salt method. V2SnC is investigated as a lithium storage anode, showing a high gravimetric capacity of 490 mAh g(-1) and volumetric capacity of 570 mAh cm(-3) as well as superior rate performance of 95 mAh g(-1) (110 mAh cm(-3)) at 50 C, surpassing the ever-reported performance of MAX phase anodes. Supported by operando X-ray diffraction and density functional theory, a charge storage mechanism with dual redox reaction is proposed with a Sn-Li (de)alloying reaction that occurs at the edge sites of V2SnC particles where Sn atoms are exposed to the electrolyte followed by a redox reaction that occurs at V2C layers with Li. This study offers promise of using MAX phases with M-site and A-site elements that are redox active as high-rate lithium storage materials.

Ti(1-x )AlxN hard coatings were prepared by reactive magnetron sputtering onto steel substrates (51CrV4 - 1.8159) and subsequently exposed for a short-time (similar to 1 s) to high-flux electron beam (EB) treatment. Morphology, composition and the structure of as-deposited and EB treated coatings were investigated using transmission electron microscopy (TEM), secondary ion mass spectroscopy (SIMS) and X-ray diffraction (XRD). It was found that the EB treatment had only a minor influence on the morphology and crystallinity of the Ti(1-x)AlxN phase, however, the stress-free lattice parameter and partly the compressive stress in the coatings were clearly reduced by the treatment. On the other hand, major changes of composition profiles and structure were observed in the metallic buffer layer between substrate and Ti(1-x)AlxN. The observed modifications in the coating-substrate system are explained by rapid heat up and radiation damage due to the fast electron exposure.

This review celebrates the width and depth of electron microscopy methods and how these have enabled massive research efforts on MXenes. MXenes constitute a powerful recent addition to 2-dimensional materials, derived from their parent family of nanolaminated materials known as MAX phases. Owing to their rich chemistry, MXenes exhibit properties that have revolutionized ranges of applications, including energy storage, electromagnetic interference shielding, water filtering, sensors, and catalysis. Few other methods have been more essential in MXene research and development of corresponding applications, compared with electron microscopy, which enables structural and chemical identification at the atomic scale. In the following, the electron microscopy methods that have been applied to MXene and MAX phase precursor research are presented together with research examples and are discussed with respect to advantages and challenges.

The class of two-dimensional metal carbides and nitrides known as MXenes offer a distinct manner of property tailoring for a wide range of applications. The ability to tune the surface chemistry for expanding the property space of MXenes is thus an important topic, although experimental exploration of surface terminals remains a challenge. Here, we synthesized Ti3C2 MXene with unitary, binary, and ternary halogen terminals, e.g., -Cl, -Br, -I, -BrI, and -ClBrI, to investigate the effect of surface chemistry on the properties of MXenes. The electrochemical activity of Br and I elements results in the extraordinary electrochemical performance of the MXenes as cathodes for aqueous zinc ion batteries. The -Br- and -I-containing MXenes, e.g., Ti3C2Br2 and Ti3C2I2, exhibit distinct discharge platforms with considerable capacities of 97.6 and 135 mA.g(-1). Ti3C2 (BrI) and Ti3C2 (ClBrI) exhibit dual discharge platforms with capacities of 117.2 and 106.7 mAh.g(-1). In contrast, the previously discovered MXenes Ti3C2Cl2 and Ti3C2 (OF) exhibit no discharge platforms and only similar to 50% of capacities and energy densities of Ti3C2Br2. These results emphasize the effectiveness of the Lewis-acidic-melt etching route for tuning the surface chemistry of MXenes and also show promise for expanding the MXene family toward various applications.

Refractory transition-metal (TM) diborides have high melting points, excellent hardness, and good  chemical  stability.  However, these properties are not sufficient for applications involving extreme  environments that require high mechanical strength as well as oxidation and corrosion resistance. Here, we study the effect of Cr addition on the properties of ZrB₂-rich Zr₁-_xCr_xB_y thin films grown by hybrid high-power impulse and dc magnetron co-sputtering (Cr-HiPIMS/ZrB₂-DCMS) with a 100-V Cr-metal-ion synchronized potential. Cr metal fraction, x = Cr/(Zr+Cr), is increased from 0.23 to 0.44 by decreasing the power P_zrb2 applied to the DCMS ZrB₂ target from 4000 to 2000 W, while the average power, pulse width, and frequency applied to the HiPIMS Cr target are maintained constant. In addition, y decreases from 2.18 to 1.11 as a function of P_zrb2, as a result of supplying Cr to the growing film and preferential B resputtering caused by the pulsed Cr-ion flux. ZrB_2.18, Zr_0.77Cr_0.23B_1.52, Zr_0.71Cr_0.29B_1.42, and Zr_0.68Cr_0.32B_1.38 2 films have hexagonal AlB₂ crystal structure with a columnar nanostructure, while Zr_0.64Cr_0.36B_1.30 and Zr_0.56Cr_0.44B_1.11 are  amorphous. All films show hardness above 30 GPa. Zr_0.56Cr_0.44B_1.11 alloys exhibit much better toughness, wear, oxidation, and corrosion resistance than ZrB_2.18. This combination of properties   makes Zr_0.56Cr_0.44B_1.11 ideal candidates for numerous strategic applications.

M(n+)(1)AX(n) (MAX) phases nanolaminated ternary carbides or nitrides possess a unique crystal structure in which single-atom-thick "A" sublayers are interleaved by alternative stacking of a "Mn+1Xn" sublayer; these materials have been investigated as promising high-safety structural materials for industrial applications because of their laminated structure and metal and ceramic properties. However, limited of A-site elements in the definition of M(n+)(1)AX(n) phases, it is a huge challenge for designing nanolaminated ferromagnetic materials with single-atom-thick two-dimensional iron layers occupying the A layers in the M(n+)(1)AX(n) phases. Here, we report three new ternary magnetic M(n+)(1)AX(n) phases (Ta2FeC, Ti2FeN, and Nb2FeC) with A sublayers of single-atom-thick two-dimensional iron through an isomorphous replacement reaction of M(n+)(1)AX(n) precursors (Ta2AlC, Ti2AlN, and Nb2AlC) with a Lewis acid salts (FeCl2). All these M(n+)(1)AX(n) phases exhibit ferromagnetic behavior. The Curie temperatures of the Ta2FeC and Nb2FeC M(n+)(1)AX(n) phases are 281 and 291K, respectively, i.e., close to room temperature. The saturation magnetization of these ternary magnetic MAX phases is almost two orders of magnitude higher than V-2(Sn,Fe)C, whose A-site is partially substituted by Fe. Theoretical calculations on magnetic orderings of spin moments of Fe atoms in these nanolaminated magnetic M(n+)(1)AX(n) phases reveal that the magnetism can be mainly ascribed to an intralayer exchange interaction of the two-dimensional Fe atomic layers. Owing to the richness in composition of M(n+)(1)AX(n) phases, our work provides a large imaginary space for constructing functional single-atom-thick two-dimensional layers in materials using these nanolaminated templates.

Exploratory theoretical predictions in uncharted structural and compositional space are integral to materials discoveries. Inspired by M5SiB2 (T2) phases, the finding of a family of laminated quaternary metal borides, M M-4 SiB2, with out-of-plane chemical order is reported here. 11 chemically ordered phases as well as 40 solid solutions, introducing four elements previously not observed in these borides are predicted. The predictions are experimentally verified for Ti4MoSiB2, establishing Ti as part of the T2 boride compositional space. Chemical exfoliation of Ti4MoSiB2 and select removal of Si and MoB2 sub-layers is validated by derivation of a 2D material, TiOxCly, of high yield and in the form of delaminated sheets. These sheets have an experimentally determined direct band gap of approximate to 4.1 eV, and display characteristics suitable for supercapacitor applications. The results take the concept of chemical exfoliation beyond currently available 2D materials, and expands the envelope of 3D and 2D candidates, and their applications.

(Ti-0.5, Mg-0.5)N thin films were synthesized by reactive dc magnetron sputtering from elemental targets onto c-cut sapphire substrates. Characterization by theta-2 theta X-ray diffraction and pole figure measurements shows a rock-salt cubic structure with (111)-oriented growth and a twin-domain structure. The films exhibit an electrical resistivity of 150 m omega center dot cm, as measured by four-point-probe, and a Seebeck coefficient of -25 mu V/K. It is shown that high temperature (similar to 800 degrees C) annealing in a nitrogen atmosphere leads to the formation of a cubic LiTiO2-type superstructure as seen by high-resolution scanning transmission electron microscopy. The corresponding phase formation is possibly influenced by oxygen contamination present in the as-deposited films resulting in a cubic superstructure. Density functional theory calculations utilizing the generalized gradient approximation (GGA) functionals show that the LiTiO2-type TiMgN2 structure has a 0.07 eV direct bandgap.

The ability to reverse the inherent tendency of noble metals to grow in an uncontrolled three-dimensional (3D) fashion on weakly interacting substrates, including two-dimensional (2D) materials and oxides, is essential for the fabrication of high-quality multifunctional metal contacts in key enabling devices. In this study, we show that this can be effectively achieved by deploying nitrogen (N-2) gas with high temporal precision during magnetron sputtering of nanoscale silver (Ag) islands and layers on silicon dioxide (SiO2) substrates. We employ real-time in situ film growth monitoring using spectroscopic ellipsometry, along with optical modeling in the framework of the finite-difference time-domain method, and establish that localized surface plasmon resonance (LSPR) from nanoscale Ag islands can be used to gauge the evolution of surface morphology of discontinuous layers up to a SiO2 substrate area coverage of similar to 70%. Such analysis, in combination with data on the evolution of room-temperature resistivity of electrically conductive layers, reveals that presence of N-2 in the sputtering gas atmosphere throughout all film-formation stages: (i) promotes 2D growth and smooth film surfaces and (ii) leads to an increase of the continuous-layer electrical resistivity by similar to 30% compared to Ag films grown in a pure argon (Ar) ambient atmosphere. Detailed ex situ nanoscale structural analyses suggest that N-2 favors 2D morphology by suppressing island coalescence rates during initial growth stages, while it causes interruption of local epitaxial growth on Ag crystals. Using these insights, we deposit Ag layers by deploying N-2 selectively, either during the early precoalescence growth stages or after coalescence completion. We show that early N-2 deployment leads to 2D morphology without affecting the Ag-layer resistivity, while postcoalescence introduction of N-2 in the gas atmosphere further promotes formation of three-dimensional (3D) nanostructures and roughness at the film growth front. In a broader context this study generates knowledge that is relevant for the development of (i) single-step growth manipulation strategies based on selective deployment of surfactant species and (ii) real-time methodologies for tracking film and nanostructure morphological evolution using LSPR.

Two-dimensional transition metal carbides and nitrides, known as MXenes, are currently considered as energy storage materials. A generic Lewis acidic etching route for preparing high-rate negative-electrode MXenes with enhanced electrochemical performance in non-aqueous electrolyte is now proposed. Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of materials that have attracted attention as energy storage materials. MXenes are mainly prepared from Al-containing MAX phases (where A = Al) by Al dissolution in F-containing solution; most other MAX phases have not been explored. Here a redox-controlled A-site etching of MAX phases in Lewis acidic melts is proposed and validated by the synthesis of various MXenes from unconventional MAX-phase precursors with A elements Si, Zn and Ga. A negative electrode of Ti3C2 MXene material obtained through this molten salt synthesis method delivers a Li+ storage capacity of up to 738 C g(-1) (205 mAh g(-1)) with high charge-discharge rate and a pseudocapacitive-like electrochemical signature in 1 M LiPF6 carbonate-based electrolyte. MXenes prepared via this molten salt synthesis route may prove suitable for use as high-rate negative-electrode materials for electrochemical energy storage applications.

Engineering tunable graphene-semiconductor interfaces while simultaneously preserving the superior properties of graphene is critical to graphene-based devices for electronic, optoelectronic, biomedical, and photoelectrochemical applications. Here, we demonstrate this challenge can be surmounted by constructing an interesting atomic Schottky junction via epitaxial growth of high-quality and uniform graphene on cubic SiC (3C-SiC). By tailoring the graphene layers, the junction structure described herein exhibits an atomic-scale tunable Schottky junction with an inherent built-in electric field, making it a perfect prototype to systematically comprehend interfacial electronic properties and transport mechanisms. As a proof-of-concept study, the atomicscale-tuned Schottky junction is demonstrated to promote both the separation and transport of charge carriers in a typical photoelectrochemical system for solar-to-fuel conversion under low bias. Simultaneously, the as-grown monolayer graphene with an extremely high conductivity protects the surface of 3C-SiC from photocorrosion and energetically delivers charge carriers to the loaded cocatalyst, achieving a synergetic enhancement of the catalytic stability and efficiency.

This study shows an approach to combine a high electrical conductivity of one composite layer with a high Seebeck coefficient of another composite layer in a double-layer composite, resulting in high thermoelectric power factor. Flexible double-layer-composites, made from Bi2Te3-based-alloy/polylactic acid (BTBA/PLA) composites and Ag/PLA composites, are synthesized by solution additive manufacturing. With the increase in Ag volume-ratio from 26.3% to 41.7% in Ag/PLA layers, the conductivity of the double-layer composites increases from 12 S cm(-1)to 1170 S cm(-1), while the Seebeck coefficient remains approximate to 80 mu V K(-1)at 300 K. With further increase in volume ratio of Ag until 45.6% in Ag/PLA composite layer, the electrical conductivity of the double-layer composites increases to 1710 S cm(-1), however, with a slight decrease of the Seebeck coefficient to 64 mu V K-1. The electrical conductivity and Seebeck coefficient vary only to a limited extent with the temperature. The high Seebeck coefficient is due to scattering of low energy charge carriers across compositionally graded interfaces. A power factor of 875 mu W m(-1) K(-2)is achieved at 360 K for 41.7 vol.% Ag in the Ag/PLA layers. Solution additive manufacturing can directly print this double-layer composite into intricate geometries, making this process is promising for large-scale fabrication of thermoelectric composites.

Thermally induced intercalation of noble metals into non-van der Waals ceramic compounds presents a method to produce a new class of layered materials. We recently demonstrated an exchange reaction of Au with A layers of MAX phase carbides with plentiful combinations of A and M elements. Here, we report the first substitution of Al with Au in a Ti2AlN MAX phase nitride at an elevated temperature without destroying the original layered structure. These results bolster the generalization of the Au intercalation for the A elements in MAX phases with diverse combinations of M, A, and X elements. Furthermore, we propose crucial factors to achieve the exchange reaction: there should be a chemical potential for the A element to dissolve in or react with noble metals to intercalate; the noble metals should be inert to the initial metal carbides/nitrides; and it is necessary to choose the reaction temperature that allows balanced interdiffusion of the noble metals and A elements.

W+ irradiation of TiAlN is used to demonstrate growth of dense, hard, and stress-free refractory nitride coatings with no external heating during reactive magnetron sputtering. Ti0.40Al0.27W0.33N nanocomposite films are deposited on Si(001) substrates using hybrid high-power impulse and dc magnetron cosputtering (HiPIMS and DCMS) in an industrial sputtering system employing substrate rotation during film growth from six cathodes. Two W targets powered by HiPIMS serve as a pulsed source of energetic W+ ions with incident fluxes analyzed by in situ time- and energy-resolved mass spectroscopy, while the remaining four targets (two elemental Ti targets and two Ti plates with Al plugs) are operated in the DCMS mode (W-HiPIMS/TiAl-DCMS) to provide a continuous flux of metal atoms and sustain a high deposition rate. A negative substrate bias V-s is applied only in synchronous with the W+-ion-rich portion of each HiPIMS pulse in order to provide film densification by heavy-ion irradiation of the TiAlN layers deposited between W+-ion exposures. W is selected for densification due to its high mass and relatively low reactivity with N-2, thus minimizing target poisoning while enhancing gas rarefaction. Dense Ti0.40Al0.27W0.33N alloy films, grown with no external substrate heating (substrate temperature T-s lower than 150 degrees C due to heat load from the plasma) and V-s=500V, exhibit a nanoindentation hardness of H=23.1GPa and an elastic modulus of E=378GPa, which are, respectively, 210% and 40% higher than for reference underdense DCMS Ti0.58Al0.42N films grown under the same conditions, but without W+ irradiation. The W ion bombardment does not affect the film stress state, which is compressive and low at 1.2GPa.

A series of (TiNbZrTa)Nx coatings with a thickness of similar to 1.1 mu m were deposited using reactive magnetron sputtering with segmented targets. The deposition temperature was varied from room temperature to 700 degrees C resulting in coatings with different microstructures. The coatings were characterized by electron microscopy, atomic force microscopy, compositional analysis, and X-ray diffraction. Effects of the deposition temperature on the electrical, mechanical and corrosion properties were studied with four-point probe, nanoindentation and potentiodynamic polarization measurements, respectively. X-ray photoelectron spectroscopy (XPS) analyses reveal a gradual change in the chemical state of all elements with increasing growth temperature from nitridic at room temperature to metallic at 700 degrees C. A NaCl-type structure with (001) preferred orientation was observed in the coating deposited at 400 degrees C, while an hcp structure was found for the coatings deposited above 400 degrees C. The resistivities of the TiNbZrTa nitride coatings were found to be around 200 mu Ocm. In 0.1 M H2SO4 aqueous solution, a corrosion current density of 2.8 x 10(-8) A/cm(2) and a passive behaviour up to 1.5 V vs. Ag/AgCl were found for the most corrosion resistant coating. The latter corrosion current is about two orders of magnitude lower than that found for a reference hyper-duplex stainless steel.

Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report 15 inherently nanolaminated V-2(A(x)Sn(1-x))C (A = Fe, Co, Ni, Mn, and combinations thereof, with x similar to 1/3) MAX phases synthesized by an alloy-guided reaction. The simultaneous occupancy of the 4 magnetic elements and Sn in the individual single-atom-thick A layers constitutes high-entropy MAX phase in which multielemental alloying exclusively occurs in the 2 -dimensional (2D) A layers. V-2(A(x)Sn(1-x))C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. Density functional theory and phase diagram calculations are performed to understand the structure stability of these MAX phases. This 2D multielemental alloying approach provides a structural design route to discover nanolaminated materials and expand their chemical and physical properties. In fact, the magnetic behavior of these multielemental MAX phases shows strong dependency on the combination of various elements.

Nanolaminated materials including magnetic ele-ments are of special interest for commonly observed nontrivial magnetic characteristics and as potential precursors for 2D materials. Here, we explore the previously unknown layered phase M2Al2C3, where M = Sc and Er. Sc2Al2C3 was synthesized as single crystals of similar to mm(2) size, and its structure was determined by single crystal X-ray diffraction and scanning transmission electron microscopy. Evaluation of phase stability and possible vacancy formation based on first-principles calculations confirms the attained phase and suggests full occupancy on both the Al and C sites. Potential realization of the hypothetical phase Y2Al2C3 is also proposed. Furthermore, we also demonstrate that Er2Al2C3 can be synthesized in powder form, providing experimental evidence for stoichiometries based on rare earth elements, which, in turn, suggests possible incorporation of other lanthanides.

New bulk MAX phase-based ceramics were synthesized in the Ta-Hf-Al-C and Ta-Nb-Al-C systems. Specifically, (Ta1-x,Hf-x)(4)AlC3 and (Ta1-x,Nb-x)(4)AlC3 stoichiometries with x = 0.05, 0.1, 0.15, 0.2, 0.25 were targeted by reactive hot pressing of Ta2H, HfH2, NbH0.89, Al and C powder mixtures at 1550 degrees C in vacuum. The produced ceramics were characterized in terms of phase composition and microstructure by X-ray diffraction, scanning electron microscopy, electron probe microanalysis and scanning transmission electron microscopy. The investigation confirmed the existence of such M-site solid solutions with low solute concentrations, as predicted by first-principles calculations. These calculations also predicted a linear trend in lattice parameter evolution with increasing Hf concentration, in agreement with the experimental results. In order to increase the low phase purity of the produced ceramics, Sn was added to form (Ta1-x,Hf-x)(4)(Al-0.5,Sn-0.5)C-3 and (Ta1-x,Nb-x)(4)(Al-0.5,Sn-0.5)C-3 double solid solutions, thus resulting in a higher content of the 413 MAX phase compounds in the produced ceramics.

We combine predictive ab initio calculations with experimental verification of bulk materials synthesis for exploration of new and potentially magnetic atomically laminated i-MAX phases. Two such phases are discovered: (Cr2/3Sc1/3)(2)GaC and (Mn2/3Sc1/3)(2)GaC synthesized by the solid state reaction from elemental constituents. The latter compound displays a 2-fold increase in Mn content compared to previously reported bulk MAX phases. Both new compounds exhibit the characteristic in-plane chemical order of Cr(Mn) and Sc, and crystallize in an orthorhombic structure, space group Cmcm, as confirmed by scanning transmission electron microscopy. From density functional theory calculations of the magnetic ground state, including the electron-interaction parameter U, we suggest an antiferromagnetic ground state, close to degenerate with the ferromagnetic state.

Guided by the theoretical prediction, a new MAX phase V2SnC was synthesized experimentally for the first time by reaction of V, Sn, and C mixtures at 1000 degrees C. The chemical composition and crystal structure of this new compound were identified by the cross-check combination of first-principles calculations, X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and high resolution scanning transmission electron microscopy (HR-STEM). The stacking sequence of V2C and Sn layers results in a crystal structure of space group P6(3)/mmc. Thea- andc-lattice parameters, which were determined by the Rietveld analysis of powder XRD pattern, are 0.2981(0) nm and 1.3470(6) nm, respectively. The atomic positions are V at 4f (1/3, 2/3, 0.0776(5)), Sn at 2d (2/3, 1/3, 1/4), and C at 2a (0, 0, 0). A new set of XRD data of V2SnC was also obtained. Theoretical calculations suggest that this new compound is stable with negative formation energy and formation enthalpy, satisfied Born-Huang criteria of mechanical stability, and positive phonon branches over the Brillouin zone. It also has low shear deformation resistancec(44)(second-order elastic constant,c(ij)) and shear modulus (G), positive Cauchy pressure, and low Pughs ratio (G/B= 0.500 < 0.571), which is regarded as a quasi-ductile MAX phase. The mechanism underpinning the quasi-ductility is associated with the presence of a metallic bond.

Nanolamellar transition metal carbides are gaining increasing interests because of the recent developments of their twodimensional (2D) derivatives and promising performance for a variety of applications from energy storage, catalysis to transparent conductive coatings, and medicine. To develop more novel 2D materials, new nanolaminated structures are needed. Here we report on a tungsten based nanolaminated ternary phase, (W,Ti)(4)C4-x, synthesized by an Al catalyzed reaction of W, Ti, and C powders at 1600 degrees C for 4 h, under flowing argon. X-ray and neutron diffraction, along with Z-contrast scanning transmission electron microscopy, were used to determine the atomic structure, ordering, and occupancies. This phase has a layered hexagonal structure (P6(3)/mmc) with lattice parameters, a = 3.00880(7) angstrom, and c = 19.5633(6) angstrom and a nominal chemistry of (W,Ti)(4)C4-x (actual chemistry, W2.1(1)Ti1.6(1)C2.6(1)). The structure is comprised of layers of pure W that are also twin planes with two adjacent atomic layers of mixed W and Ti, on either side. The use of Al as a catalyst for synthesizing otherwise difficult to make phases, could in turn lead to the discovery of a large family of nonstoichiometric ternary transition metal carbides, synthesized at relatively low temperatures and shorter times.

In 2017, we discovered quaternary i-MAX phases atomically layered solids, where M is an early transition metal, A is an A group element, and X is C-with a ((M2/3M1/32)-M-1)(2)AC chemistry, where the M-1 and M-2 atoms are in-plane ordered. Herein, we report the discovery of a class of magnetic i-MAX phases in which bilayers of a quasi-2D magnetic frustrated triangular lattice overlay a Mo honeycomb arrangement and an Al Kagome lattice. The chemistry of this family is (Mo2/3RE1/3)(2)AlC, and the rare-earth, RE, elements are Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. The magnetic properties were characterized and found to display a plethora of ground states, resulting from an interplay of competing magnetic interactions in the presence of magnetocrystalline anisotropy.

The authors investigate sputtering of a Ti₃SiC₂ compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti₃SiC₂ films on Al₂O₃(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray photoelectron spectroscopy shows C–Ti and Si–C bonding in the Ti₃SiC₂ films and Si–Si bonding in the Ti₃SiC₂ compound target. X-ray diffraction reveals that the phases Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅ can be deposited from a Ti₃SiC₂ compound target at substrate temperatures above 850 °C and with the growth of TiC and the Nowotny phase Ti₅Si₃C_x at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅ on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films containing Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅.

The performance of transition metal nitride based coatings deposited by magnetron sputtering, in a broad range of applications including wear-protective coatings on cutting tools and components in automotive engines, is determined by their phase content. The classical example is the precipitation of thermodynamically-favored wurtzite-AlN while alloying TiN with Al to obtain ternary single phase NaCl-structure films with improved high-temperature oxidation resistance. Here, we report on reactive high-power impulse and direct current magnetron co-sputtering (HiPIMS/DCMS) growth of Ti0.31Al0.69N and Zr0.48Al0.52N thin films. The Al concentrations are intentionally chosen to be higher than theoretically predicted solubility limits for the rock salt structure. The goal is to investigate the effect of the incident Al+ energy E-Al(+), controlled by varying the amplitude of the substrate bias applied synchronously with the Al+-rich portion of the ion flux from the Al-HiPIMS source, on the crystalline phase formation. For EAl+ amp;lt;= 60 eV, films contain predominantly the wurtzite phase. With increasing E-Al(+), and thus, the Al subplantation depth, the relative fraction of the NaCl structure increases and eventually for E-Al(+) amp;gt; 250 eV, Ti0.31Al0.69N and Zr0.48Al0.52N layers contain more than 95% of the rock salt phase. Thus, the separation of the film forming species in time and energy domains determines the phase formation of Ti0.31Al0.69N and Zr0.48Al0.52N layers and enables the growth of the cubic phase outside of the predicted Al concentration range. The new film growth concept can be applied to the entire family of multinary transition metal aluminum nitrides, where one of the metallic film constituents is available in the ionized form while the other arrives as neutral.

Semiconductor quantum dots (QDs) are among the most promising next-generation optoelectronic materials. QDs are generally obtained through either epitaxial or colloidal growth and carry the promise for solution-processed high-performance optoelectronic devices such as light-emitting diodes (LEDs), solar cells, etc. Herein, a straightforward approach to synthesize perovskite QDs and demonstrate their applications in efficient LEDs is reported. The perovskite QDs with controllable crystal sizes and properties are in situ synthesized through one-step spin-coating from perovskite precursor solutions followed by thermal annealing. These perovskite QDs feature size-dependent quantum confinement effect (with readily tunable emissions) and radiative monomolecular recombination. Despite the substantial structural inhomogeneity, the in situ generated perovskite QDs films emit narrow-bandwidth emission and high color stability due to efficient energy transfer between nanostructures that sweeps away the unfavorable disorder effects. Based on these materials, efficient LEDs with external quantum efficiencies up to 11.0% are realized. This makes the technologically appealing in situ approach promising for further development of state-of-the-art LED systems and other optoelectronic devices.

Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesizing a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition-metal halides. The approach is a top-down route that enables the late transitional element atom (Zn in the present case) to occupy the A site in the pre-existing MAX phase structure. Using this replacement reaction between the Zn element from molten ZnCl2 and the Al element in MAX phase precursors (Ti3AlC2, Ti2AlC, Ti2AlN, and V2AlC), novel MAX phases Ti3ZnC2, Ti2ZnC, Ti2ZnN, and V2ZnC were synthesized. When employing excess ZnCl2, Cl-terminated MXenes (such as Ti3C2Cl2 and Ti2CCl2) were derived by a subsequent exfoliation of Ti3ZnC2 and Ti2ZnC due to the strong Lewis acidity of molten ZnCl2. These results indicate that A-site element replacement in traditional MAX phases by late transition-metal halides opens the door to explore MAX phases that are not thermodynamically stable at high temperature and would be difficult to synthesize through the commonly employed powder metallurgy approach. In addition, this is the first time that exclusively Cl-terminated MXenes were obtained, and the etching effect of Lewis acid in molten salts provides a green and viable route to preparing MXenes through an HF-free chemical approach.

An enhancement of the electron mobility (mu) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases mu at room temperature (RT) from 1600 to 1930 cm(2)/Vs. The effect is further enhanced at cryogenic temperature (5 K), where the GaN IL sample exhibits a mu of 16 000 cm(2)/Vs, compared to 6900cm(2)/Vs without IL. The results indicate the reduction of one or more scattering mechanisms normally present in InAlN/AlN/GaN heterostructures. We propose that the improvement in mu is either due to the suppression of fluctuations in the quantum well subband energies or to reduced Coulomb scattering, both related to compositional variations in the InAlN. HEMTs fabricated on the GaN IL sample demonstrate larger improvement in dc- and high-frequency performance at 5 K; f(max) increases by 25 GHz to 153 GHz, compared to an increase of 6 GHz to 133 GHz without IL. The difference in improvement was associated mainly with the drop in the access resistances.

Herein, we report on the growth of single crystals of various (Mo2/3RE1/3)(2)AlC (RE = Nd, Gd, Dy, Ho, Er) i-MAX phases and their Raman characterization. Using first principles, the wave numbers of the various phonon modes and their relative atomic displacements are calculated and compared to experimental results. Twelve high-intensity Raman peaks are identified as the fingerprint of this new family of rare-earth containing i-MAX phases, thus being a useful tool to investigate their corresponding composition and structural properties. Indeed, while a redshift is observed in the low-wave-number range due to an increase of the rare-earth atomic mass when moving from left to right on the lanthanide row, a blueshift is observed for most of the high-wave-number modes due to a strengthening of the bonds. A complete classification of bond stiffnesses is achieved based on the direct dependence of a phonon mode wave number with respect to the bond stiffness. Finally, STEM images are used to confirm the crystal structure.

A two-step synthesis approach was utilized to grow CaMnO3 on M-, R- and C-plane sapphire substrates. Radio-frequency reactive magnetron sputtering was used to grow rock-salt-structured (Ca, Mn)O followed by a 3-h annealing step at 800 degrees C in oxygen flow to form the distorted perovskite phase CaMnO3. The effect of temperature in the post-annealing step was investigated using x-ray diffraction. The phase transformation to CaMnO3 started at 450 degrees C and was completed at 550 degrees C. Films grown on R- and C-plane sapphire showed similar structure with a mixed orientation, whereas the film grown on M-plane sapphire was epitaxially grown with an out-of-plane orientation in the [202] direction. The thermoelectric characterization showed that the film grown on M-plane sapphire has about 3.5 times lower resistivity compared to the other films with a resistivity of 0.077cm at 500 degrees C. The difference in resistivity is a result from difference in crystal structure, single orientation for M-plane sapphire compared to mixed for R- and C-plane sapphire. The highest absolute Seebeck coefficient value is -350 mu VK-1 for all films and is decreasing with temperature.

The layered cobaltates A(x)CoO(2) (A: alkali metals and alkaline earth metals) are of interest in the area of energy harvesting and electronic applications, due to their good electronic and thermoelectric properties. However, their future widespread applicability depends on the simplicity and cost of the growth technique. Here, we have investigated the sputtering/annealing technique for the growth of CaxCoO2 (x = 0.33) thin films. In this approach, CaO-CoO film is first deposited by rf-magnetron reactive cosputtering from metallic targets of Ca and Co. Second, the as-deposited film is reactively annealed under O-2 gas flow to form the final phase of CaxCoO2. The advantage of the present technique is that, unlike conventional sputtering from oxide targets, the sputtering is done from the metallic targets of Ca and Co; thus, the deposition rate is high. Furthermore, the composition of the film is controllable by controlling the power at the targets.

(Al,Cr)(2)O-3 coatings with Al/( Al + Cr) = 0.5 or Al = 70 at. %, doped with 0, 5, or 10 at. % Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings showed between 3.3 and 7.4 at. % metal fraction Si incorporated into all studied coatings depending on cathode Si composition. The incorporated Si content does not change significantly with different oxygen flows covering a wide range of deposition conditions from low to high O-2 flow during growth. The addition of Si promotes the metastable B1-like cubic structure over the thermodynamically stable corundum structure. The hardness determined by nanoindentation of the as-deposited coatings is slightly reduced upon Si incorporation as well as upon increased Al content. Si is found enriched in droplets but can also be found at a lower content, evenly spread, without visible segregation at the similar to 5 nm scale, in the actual oxide coating. The positive effect of improved cathode erosion upon Si incorporation has to be balanced against the promotion of the metastable B1-like structure, having lower room temperature hardness and inferior thermal stability compared to the corundum structure. Published by the AVS.

Research on low-dimensional materials has increased drastically in the last decade, with the discovery of two-dimensional transition metal carbides and nitrides (MXenes) produced by atom-selective chemical etching of laminated parent M(n+1)AX(n) (MAX) phases. Here, we apply density functional theory and subsequent materials synthesis and analysis to explore the phase stability and Mo/Sc intermixing on the M site in the chemically ordered quaternary i-MAX phase (MoxSc1-x)(2)AlC. Transmission electron microscopy confirms the theoretical predictions of preferential in-plane ordering of Mo and Sc, with the highest crystal quality obtained for the ideal Mo:Sc ratio of 2:1 (predicted as the most stable), as well as a retained i-MAX structure even for an increased relative Sc content, with Sc partially occupying Mo sites. The results are supported by refined neutron diffraction data, which show space group C2/c (no. 15), and a C occupancy of 1. Subsequent chemical etching produces MXene for x = 0.66, while for x = 0.33 and 0.5 no MXene is observed. These results demonstrate that a precise control of the i-MAX composition is crucial for derivation of MXene, with a MXene quality optimized for a Mo:Sc ratio of 2:1 with minimal intermixing between Mo and Sc.

Coatings of (Al_1-xV_x)₂O₃, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V₂O₃ rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63–42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al₂O₃. The microstructure changes from large columnar faceted grains for α-V₂O₃ to smaller equiaxed grains when lowering the vanadium content towards pure γ-Al₂O₃. Annealing in air resulted in formation of V₂O₅ crystals on the surface of the coating after annealing to 500 °C for 42 at.% V and 700 °C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure γ-Al₂O₃-coating, which transformed to α-Al₂O₃ after annealing to 1100 °C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings.

The phase evolution of reactive radio frequency (RF) magnetron sputtered Cr0.28Zr0.10O0.61 coatings has been studied by in situ synchrotron X-ray diffraction during annealing under air atmosphere and vacuum. The annealing in vacuum shows t-ZrO2 formation starting at similar to 750-800 degrees C, followed by decomposition of the alpha-Cr2O3 structure in conjunction with bcc-Cr formation, starting at similar to 950 degrees C. The resulting coating after annealing to 1140 degrees C is a mixture of t-ZrO2, m-ZrO2, and bcc-Cr. The air-annealed sample shows t-ZrO2 formation starting at similar to 750 degrees C. The resulting coating after annealing to 975 degrees C is a mixture of t-ZrO2 and alpha-Cr2O3 (with dissolved Zr). The microstructure coarsened slightly during annealing, but the mechanical properties are maintained, with no detectable bcc-Cr formation. A larger t-ZrO2 fraction compared with alpha-Cr2O3 is observed in the vacuum-annealed coating compared with the air-annealed coating at 975 degrees C. The results indicate that the studied pseudo-binary oxide is more stable in air atmosphere than in vacuum.