High-performance electrocatalysts for the hydrogen evolution reaction are of interest in the development of next-generation sustainable hydrogen production systems. Although expensive platinum-group metals have been recognized as the most effective HER catalysts, there is an ongoing requirement for the discovery of cost-effective electrode materials. This paper reveals the prospects of two-dimensional (2D) noble metals, possessing a large surface area and a high density of active sites available for hydrogen proton adsorption, as promising catalytic materials for water splitting. An overview of the synthesis techniques is given. The advantages of wet chemistry approaches for the growth of 2D metals over deposition techniques show the potential for kinetic control that is required as a precondition to prevent isotropic growth. An uncontrolled presence of surfactant-related chemicals on a 2D metal surface is however the main disadvantage of kinetically controlled growth methods, which stimulates the development of surfactant-free synthesis approaches, especially template-assisted 2D metal growth on non-metallic substrates. Recent advances in the growth of 2D metals using a graphenized SiC platform are discussed. The existing works in the field of practical application of 2D noble metals for hydrogen evolution reaction are analyzed. This paper shows the technological viability of the "2D noble metals" concept for designing electrochemical electrodes and their implementation into future hydrogen production systems, thereby providing an inspirational background for further experimental and theoretical studies.

The optical properties of graphene nanodots (GND) and their interaction with phosphate ions have been investigated to explore their potential for optical sensing applications. The absorption spectra of pristine GND and modified GND systems were analyzed using time-dependent density functional theory (TD-DFT) calculation investigations. The results revealed that the size of adsorbed phosphate ions on GND surfaces correlated with the energy gap of the GND systems, leading to significant modifications in their absorption spectra. The introduction of vacancies and metal dopants in GND systems resulted in variations in the absorption bands and shifts in their wavelengths. Moreover, the absorption spectra of GND systems were further altered upon the adsorption of phosphate ions. These findings provide valuable insights into the optical behavior of GND and highlight their potential for the development of sensitive and selective optical sensors for phosphate detection.

The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While sp2 bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate largearea, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200 degrees C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity.

The geometrical structure and photoexcitation properties of Zn27-nCdnO27C42 complexes are investigated by density functional theory (DFT) and time-dependent DFT calculations at the PBE0/6-31G*/SDD level of theory. The cohesive energy and frequency analysis indicate that the hybrid materials are energetically stable. In presence of Cd substituting atoms, the energy gap of the ZnO nanodots surrounded by carbon moiety is shown to decrease, as compared to Cd-free complex. In-depth excited state analysis including charge density difference (CDD) mapping and absorption spectrum decomposition is performed to reveal the nature of the dominant excited states and to comprehend the Cd-to-Zn substitution effect on the photoexcitation properties of Zn27-nCdnO27C42. A principal possibility to enhance the intramolecular charge transfer through incorporation of certain number of Cd atoms into the ZnO nanodots is shown. Such Cd-induced modifications in optical properties of semi-spherical Zn27-nCdnO27C42 complexes could potentially enable use of this hybrid material in optoelectronic and photocatalytic applications.

This paper presents a theoretical study on the effects of selected defects (oxygen vacancies and substitutional Fe-Zn atoms) on the structural and electronic properties of a 2D ZnO/graphene heterostructure. Spin-polarized Hubbard- and dispersion-corrected density functional theory (DFT) was used to optimize the geometrical configurations of the heterostructure and to analyze the equilibrium distance, interlayer distance, adhesion energy, and bond lengths. Charge density difference (CDD) analysis and band structure calculations were also performed to study the electronic properties of the heterostructure. The results show that the presence of defects affects the interlayer distance and adhesion energy, with structures including oxygen vacancies and Fe-Zn substitutional atoms having the strongest interaction with graphene. It is demonstrated that the oxygen vacancies generate localized defect states in the ZnO bandgap and lead to a shift of both valence and conduction band positions, affecting the Schottky barrier. In contrast, Fe dopants induce strong spin polarization and high spin density localized on Fe atoms and their adjacent oxygen neighbors as well as the spin asymmetry of Schottky barriers in 2D ZnO/graphene. This study presents a comprehensive investigation into the effects of graphene on the electronic and adsorption properties of 2D ZnO/graphene heterostructures. The changes in electronic properties induced by oxygen vacancies and Fe dopants can enhance the sensitivity and catalytic activity of the 2D ZnO/graphene system, making it a promising material for sensing and catalytic applications.

Here we investigate the interface properties of gold (Au) decorated graphenized surfaces of 4H-SiC intended for electrochemical electrodes. These are fabricated using a two-step process: discontinuous Au layers with a nominal thickness of 2 nm are sputter-deposited onto 4H-SiC substrates with different graphenization extent-zero-layer graphene (ZLG) and monolayer epitaxial graphene) -followed by thermal annealing. By performing combined morphometric analysis, Raman mapping analysis, conductive atomic force microscopy, and electrochemical impedance spectroscopy measurements, we shed light on the relationship between physical processes (Au intercalation, particle re-shaping, and de-wetting) caused by thermal annealing and the intrinsic properties of graphenized SiC (vertical electron transport, charge-transfer properties, vibrational properties, and catalytic activity). We find that the impedance spectra of all considered structures exhibit two semicircles in the high and low frequency regions, which may be attributed to the graphene/ZLG/SiC (or Au/graphene/ZLG/SiC) and SiC/ZLG/graphene/electrolyte (or SiC/ZLG//Au/electrolyte) interfaces, respectively. An equivalent circuit model is proposed to estimate the interface carrier transfer parameters. This work provides an in-depth comprehension of the way by which the Au/2D carbon/SiC interaction strength influences the interface properties of heterostructures, which can be helpful for developing high performance catalytic and sensing devices.

Photoelectrochemical (PEC) water splitting for hydrogen production using the CdTe photocathode has attracted much interest due to its excellent sunlight absorption property and energy band structure. This work presents a study of engineered interfacial energetics of CdTe photocathodes by deposition of CdS, TiO2, and Ni layers. A heterostructure CdTe/CdS/TiO2/Ni photocathode was fabricated by depositing a 100-nm n-type CdS layer on a p-type CdTe surface, with 50 nm TiO2 as a protective layer and a 10 nm Ni layer as a co-catalyst. The CdTe/CdS/TiO2/ Ni photocathode exhibits a high photocurrent density (Jph) of 8.16 mA/cm2 at 0 V versus reversible hydrogen electrode (VRHE) and a positive-shifted onset potential (Eonset) of 0.70 VRHE for PEC hydrogen evolution under 100 mW/cm2 AM1.5G illumination. We further demonstrate that the CdTe/CdS p-n junction promotes the separation of photogenerated carriers, the TiO2 layer protects the electrode from corrosion, and the Ni catalyst improves the charge transfer across the electrode/electrolyte interface. This work provides new insights for designing noble metal-free photocathodes toward solar hydrogen development.

In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm⁻³) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm⁻³ and carbon of 2×1016 cm⁻³. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm²/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.

The combination of wide-band gap semiconductors such as zinc oxide (ZnO) and graphene quantum dots (GQDs) is a promising strategy to tune the optoelectronic properties of GQDs and develop new functionalities. Here we report on a theoretical design of not-yet-synthesized hybrid materials composed of ZnO clusters surrounded by carbon moieties, hereinafter referred to as ZnO-embedded graphene quantum dots. Their structure and light absorption properties are presented, with an in-depth analysis of the nature of the photoexcited states. The stability of the (ZnO)(n)C96-2n system with n = 1, 3, 4, 7, 12 and 27 is investigated by performing vibrational mode analysis and estimating cohesive energy and zinc vacancy formation energy. A strong dependence of the structural and optoelectronic properties of the hybrid material on the amount of ZnO pairs is revealed and discussed. Strong light absorption and unexpected enhancement of Raman modes related to the vibrations in carbon moiety are observed for the highly symmetric (ZnO)(27)C-42 system that makes it an ideal study subject. Complementary excited state analysis, charge density difference (CDD) analysis and interfragment charge transfer analysis present insights deep into the nature of the excited states. An equal contribution of doubly degenerate locally excited states and charge transfer states in broadband light absorption by (ZnO)(27)C-42 is identified. The present results are helpful to elucidate the nature of the fundamental internal mechanisms underlying light absorption in ZnO-embedded graphene quantum dots, thereby providing a scientific background for future experimental study of low-dimensional metal-oxygen-carbon material family.

We report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials based on the tri-layer resist system. We demonstrate the applicability of this method in devices fabricated on epitaxial graphene on silicon carbide (epigraphene) used as a scalable 2D material platform. For epigraphene, data on nearly 70 contacts result in median values of the one-dimensional (1D) specific contact resistances pc 67 omega center dot im and follow the Landauer quantum limit pc n-1/2, consistently reaching values pc < 50 omega center dot im at high carrier densityn. As a proof of concept, we apply the same fabrication method to the transition metal dichalcogenide (TMDC) molybdenum disulfide (MoS2). Our edge contacts enable MoS2 field-effect transistor (FET) behavior with an ON/OFF ratio of >106 at room temperature (>109 at cryogenic temperatures). The fabrication route demonstrated here allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.

In light of their unique physicochemical properties two-dimensional metals are of interest in the development of next-generation sustainable sensing and catalytic applications. Here we showcase results of the investigation of the substrate effect on the formation and the catalytic activity of representative 2D gold layers supported by non-graphenized and graphenized SiC substrates. By performing comprehensive density functional theory (DFT) calculations, we revealed the epitaxial alignment of gold monolayer with the underlying SiC substrate, regardless of the presence of zero-layer graphene or epitaxial graphene. This is explained by a strong binding energy (similar to 4.7 eV) of 2D Au/SiC and a pronounced charge transfer at the interface, which create preconditions for the penetration of the related electric attraction through graphene layers. We then link the changes in catalytic activity of substrate-supported 2D Au layer in hydrogen evolution reaction to the formation of a charge accumulation region above graphenized layers. Gold intercalation beneath zero-layer graphene followed by its transformation to quasi-free-standing epitaxial graphene is found to be an effective approach to tune the interfacial charge transfer and catalytic activity of 2D Au. The sensing potential of substrate-supported 2D Au was also tested through exploring the adsorption behaviour of NH3, NO2 and NO gas molecules. The present results can be helpful for the experimental design of substrate-supported 2D Au layers with targeted catalytic activity and sensing performance.

Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for low-noise radio-frequency amplifiers. In this work, we demonstrate different grading profiles of a 10-nm-thick AlxGa1-xN channel from x = 0 to x = 0.1 using hot-wall metal-organic chemical vapor deposition (MOCVD). The growth process is developed by optimizing the channel grading and the channel-to-barrier transition. For this purpose, the Al-profiles and the interface sharpness, as determined from scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, are correlated with specific MOCVD process parameters. The results are linked to the channel properties (electron density, electron mobility, and sheet resistance) obtained by contactless Hall and terahertz optical Hall effect measurements coupled with simulations from solving self-consistently Poisson and Schrodinger equations. The impact of incorporating a thin AlN interlayer between the graded channel and the barrier layer on the HEMT properties is investigated and discussed. The optimized graded channel HEMT structure is found to have similarly high electron density (similar to 9 x 10(12) cm(-2)) as the non-graded conventional structure, though the mobility drops from similar to 2360 cm(2)/V s in the conventional to similar to 960 cm(2)/V s in the graded structure. The transconductance g(m) of the linearly graded channel HEMTs is shown to be flatter with smaller g(m) and g(m) as compared to the conventional non-graded channel HEMT implying improved device linearity. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

The climate change due to human activities stimulates the research on new energy resources. Hydrogen has attracted interest as a green carrier of high energy density. The sustainable production of hydrogen is achievable only by water electrolysis based on the hydrogen evolution reaction (HER). Graphitic materials are widely utilized in this technology in the role of conductive catalyst supports. Herein, by performing dynamic and steady-state electrochemical measurements in acidic and alkaline media, we investigated the bidirectional electrocatalysis of the HER and hydrogen oxidation reaction (HOR) on metal- and defect-free epigraphene (EG) grown on 4H silicon carbide (4HSiC) as a ground level of structural organization of general graphitic materials. The absence of any signal degradation illustrates the high stability of EG. The experimental and theoretical investigations yield the coherent conclusion on the dominant HER pathway following the Volmer-Tafel mechanism. We ascribe the observed reactivity of EG to its interaction with the underlying SiC substrate that induces strain and electronic doping. The computed high activation energy for breaking the O-H bond is linked to the high negative overpotential of the HER. The estimated exchange current of HER/HOR on EG can be used in the evaluation of complex electrocatalytic systems based on graphite as a conducing support.

Optical nanoantennas based on organic plasmonics are promising for their higher degree of tunability over metallic nanostructures. Here, nanodisks of polythiophene-based semiconducting polymers provide nanooptical antennas with resonances that are tunable over a 1000 nm wavelength range and can be switched off or on by doping modulation. Optical nanoantennas are often based on plasmonic resonances in metal nanostructures, but their dynamic tunability is limited due to the fixed permittivity of conventional metals. Recently, we introduced PEDOT-based conducting polymers as an alternative materials platform for dynamic plasmonics and metasurfaces. Here, we expand dynamic organic plasmonic systems to a wider class of doped polythiophene-based semiconducting polymers. We present nanodisks of PBTTT semiconducting polymer doped with a dicationic salt, enabling a high doping level of around 0.8 charges per monomer, and demonstrate that they can be used as nanooptical antennas via redox-tunable plasmonic resonances. The resonances arise from the polymer being optically metallic in its doped state and dielectric in its non-conducting undoped state. The plasmonic resonances are controllable over a 1000 nm wavelength range by changing the dimensions of the nanodisks. Furthermore, the optical response of the nanoantennas can be reversibly tuned by modulating the doping level of the polymer. Simulations corroborate the experimental results and reveal the possibility to also modulate the optical nearfield response of the nanoantennas.

Nanostructures of conventional metals offer manipulation of light at the nanoscale but are largely limited to static behavior due to fixed material properties. To develop the next frontier of dynamic nano-optics and metasurfaces, this study utilizes the redox-tunable optical properties of conducting polymers, as recently shown to be capable of sustaining plasmons in their most conducting oxidized state. Electrically tunable conducting polymer nano-optical antennas are presented, using nanodisks of poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf) as a model system. In addition to repeated on/off switching of the polymeric nanoantennas, the concept enables gradual electrical tuning of the nano-optical response, which was found to be related to the modulation of both density and mobility of the mobile polaronic charge carriers in the polymer. The resonance position of the PEDOT:Sulf nanoantennas can be conveniently controlled by disk size, here reported down to a wavelength of around 1270 nm. The presented concept may be used for electrically tunable metasurfaces, with tunable farfield as well as nearfield. The work thereby opens for applications ranging from tunable flat meta-optics to adaptable smart windows.

We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1-xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density N s = ( 7.3 +/- 0.7 ) x 10 12 cm(-2), sheet mobility mu s = ( 270 +/- 40 ) cm(2)/(Vs), sheet resistance R- s = ( 3200 +/- 500 ) omega/ ?, and effective mass m( eff) = ( 0.63 +/- 0.04 ) m( 0) at low temperatures ( T = 5 K ) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson-Schrodinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N ( m( eff) = 0.334 m( 0)). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson-Schrodinger calculations .Published under an exclusive license by AIP Publishing.

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T > 1850 degrees C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal- semiconductor-metal (MSM) detectors with a peak external quantum efficiency of g -85% for wavelengths k = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io -50 fA translate into an estimated record high specific detectivity D = 3.5 x 10(15) Jones. The performance that we demonstrate, together with material repro-ducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.

Herein, metal-organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] approximate to 2 x 10(19) cm(-3) is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p approximate to 2 x 10(17) cm(-3) in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated Mg-Ga acceptor.

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range ( 2.45 x 10( 18) cm(-3) up to 1.10 x 10(20) cm(-3)) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 omega cm and 8.4 x 10( 17) cm(-3), respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures. (C)2022 Author(s).

Graphene pn-junctions offer a rich portfolio of intriguing physical phenomena. They stand as the potential building blocks for a broad spectrum of future technologies, ranging from electronic lenses analogous to metamaterials in optics, to high-performance photodetectors important for a variety of optoelectronic applications. The production of graphene pn-junctions and their precise structuring at the nanoscale remains to be a challenge. In this work, a scalable method for fabricating periodic nanoarrays of graphene pn-junctions on a technologically viable semiconducting SiC substrate is introduced. Via H-intercalation, 1D confined armchair graphene nanoribbons are transformed into a single 2D graphene sheet rolling over 6H-SiC mesa structures. Due to the different surface terminations of the basal and vicinal SiC planes constituting the mesa structures, different types of charge carriers are locally induced into the graphene layer. Using angle-resolved photoelectron spectroscopy, the electronic band structure of the two graphene regions are selectively measured, finding two symmetrically doped phases with p-type being located on the basal planes and n-type on the facets. The results demonstrate that through a careful structuring of the substrate, combined with H-intercalation, integrated networks of graphene pn-junctions could be engineered at the nanoscale, paving the way for the realization of novel optoelectronic device concepts.

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.

In this paper, we demonstrate the feasibility of fabricating vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC) material obtained by combining sublimation epitaxy and chemical vapor deposition, starting from 4 degrees -off axis 4H-SiC. First, the good quality of the epilayers grown with this method was demonstrated by morphological and structural analyses. Then, fabricated vertical Pt/3C-SiC Schottky diodes exhibited an ideality factor of 1.21 and a barrier height of 0.6 eV, as determined by thermionic emission model. The temperature dependent forward current analysis indicated the formation of an inhomogeneous barrier, which has been related with the presence of conductive surface defects, detected by nanoscale local current measurements. On the other hand, the reverse leakage current could be described by thermionic field emission model, including image force lowering. These findings demonstrate the viability of the proposed approach for bulk 3C-SiC growth for device fabrication. The material quality and the feasibility of fabricating vertical diodes based on 3C-SiC with a low barrier pave the way for the application of this polytype for medium-voltage power devices.

Novel two-dimensional materials (2DMs) with balanced electrical conductivity and lithium (Li) storage capacity are desirable for next-generation rechargeable batteries as they may serve as high-performance anodes, improving output battery characteristics. Gaining an advanced understanding of the electrochemical behavior of lithium at the electrode surface and the changes in interior structure of 2DM-based electrodes caused by lithiation is a key component in the long-term process of the implementation of new electrodes into to a realistic device. Here, we showcase the advantages of bilayer-patched epitaxial graphene on 4H-SiC (0001) as a possible anode material in lithium-ion batteries. The presence of bilayer graphene patches is beneficial for the overall lithiation process because it results in enhanced quantum capacitance of the electrode and provides extra intercalation paths. By performing cyclic voltammetry and chronoamperometry measurements, we shed light on the redox behavior of lithium at the bilayer-patched epitaxial graphene electrode and find that the early-stage growth of lithium is governed by the instantaneous nucleation mechanism. The results also demonstrate the fast lithium-ion transport (similar to 4.7-5.6 x 10(-7) cm(2).s(-1)) to the bilayer-patched epitaxial graphene electrode. Raman measurements complemented by in-depth statistical analysis and density functional theory calculations enable us to comprehend the lithiation effect on the properties of bilayer-patched epitaxial graphene and ascribe the lithium intercalation-induced Raman G peak splitting to the disparity between graphene layers. The current results are helpful for further advancement of the design of graphene-based electrodes with targeted performance.

Frequency and voltage dependent electrical characteristics are reported for Ni/ZnO Schottky diodes. Schottky diodes are realized from nano-structured ZnO thin films grown by DC magnetron sputtering. Electrical characterizations are performed by current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The diode parameters are extracted, such as barrier height (phi(B)), ideality factor (n) and carrier concentration (N-D). The diodes exhibited a non-linear rectifying behaviour with a barrier height of 0.68 eV and an ideality factor greater than unity. Charge transport mechanism and possible reasons responsible for non-idealities are investigated. The density of interface states (N-SS) below the conduction band are extracted from the measured values of I-V and C-V as a function of E-C - E-SS. From E-C- 0.51 to E-C - 0.64 eV below the conduction band edge, the interface state density N-SS is found to be in the range 1.74 x 10(12)-1.87 x 10(11) eV cm. The interface states density obtained from capacitance-frequency (C-f) characteristics varied from 0.53 x 10(12)-0.12 x 10(12) eV cm from E-C 0.82 eV to E-C 0.89 eV below the conduction band. A complete description of current transport and interface properties is important for the realization of good quality Schottky diodes and for the design and implementation of high performance electronic circuits and systems.

We present a detailed investigation on the effects of water diffusion at the different interfaces of gold-graphene plasmonic sensors on the propagation of the supported surface plasmon polaritons (SPPs). The substrate/metal interfacial chemical reactions are investigated by monitoring the full width at half-maximum of the SPR reflectivity curve. Although protection by single-layer graphene (SLG) grown by chemical vapor deposition inhibits the chemical reactions happening at the metal-dielectric interfaces, SPR experimental results confirm that water diffusion paths through the borders of graphene domains are still present into the plasmonic sensors. Density functional theory calculations show that the doping level of SLG after the transfer on gold as well as interfacial charge transfer can be tuned in the presence of water molecules. On these bases, we propose a simplified effective medium approach for heterogeneous metal-carbon interfaces, where the interaction between the surface atomic layers of the gold thin film, water molecules, and the SLG induces the creation of an extended charge density difference region crossing the Au/H2O/SLG/H2O heterointerface. The latter is modeled as an ultrathin effective medium with a thickness and extraordinary optical susceptivity and conductivity that are different from those of the free-standing graphene. In this context, the extraordinary refractive index and thickness of the graphene-gold effective medium are measured in the near-infrared on the low-damping SPR platforms by applying the two-medium SPR method. The results are coherent with graphene n-doping in water environment, showing that the optically excited electrons along the extraordinary axis have a substantial bonding character and that the enhancement of the sensitivity of the gold-graphene plasmonic sensors is not related to a shift in the plasma frequency of the metal layer but to the changes in the extraordinary polarizability of graphene. The research highlights the importance of the SLG-substrate and SLG-environment interactions in graphene-protected plasmonics and optoelectronics.

In this work a new plasma-based approach to hydrogen intercalation of Graphene grown on SiC is demonstrated. By optimization of the inductively coupled plasma parameters the intercalated by hydrogen Graphene has been modified gradually and transformed into the two-dimensional hydrocarbon Graphane. The intermediate stages during the transition of Graphene to Graphane were studied by means of Raman spectroscopy and AFM. The dependence of the intensities of the Raman Graphene fingerprints: D and G peaks on the hydrogen intercalation time has been studied. The changes of resistance during the hydrogen plasma treatment were parsed. The Raman (D + D ) peak corresponding to hydrogenated graphene was studied in detail. The method developed is highly reliable and flexible as well as convenient for large-scale fabrication of Graphane to be employed as a hydrogen storage material and in 2D electronics.

Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration in a stack of thin layers of materials. The ideal structure of graphene has a fully saturated surface without any binding sites for chemisorption of growth species, making film growth on graphene highly challenging. Herein, an attempt to deposit very thin layers of AlN using an atomic layer deposition approach is reported. It is demonstrated using X-ray photoelectron spectroscopy that Al-N are formed in the films deposited on graphene and shown by scanning electron microscopy and atomic force microscopy that the films have an island morphology. These results may be considered promising toward the development of a growth protocol for AlN on graphene and possibly also for 2D AlN fabrication.

A fundamental understanding of the behavior of gold (Au) nanostructures deposited on functional surfaces is imperative to discover and leverage interface-related phenomena that can boost the efficiency of existing electronic devices in sensorics, catalysis, and spintronics. In the present work, Au layers with nominal thickness of 2 nm were sputter-deposited on graphenized SiC substrates represented by buffer layer (BuL)/4H-SiC and monolayer epitaxial graphene (MLG)/4H-SiC. Morphometric analysis by means of scanning electron microscopy shows that Au on BuL self-assembles in nearly round-shaped plasmonically active islands, while on MLG, a fractal growth of considerably larger and ramified islands is observed. To correlate the experimentally established differences in surface morphology on the two types of graphenized substrates with energetics and kinetics of Au nanostructure growth, the deposit-substrate interaction strength was studied using density functional theory (DFT) calculations, molecular dynamics simulations, and optical measurements. The theoretical considerations involve participation of Au clusters with different sizes and energetics at the initial stages of the metal nanostructure formation. The results indicate that gold exhibits a considerably stronger interaction with BuL than with MLG, which can be considered as a key aspect for explaining the experimentally observed morphological differences. From the statistical analysis of Raman spectra, indications of Au intercalation of MLG are discussed. The current research shows that, due to its unique surface chemistry, buffer layer has peculiar affinity to gold when compared to other atomically flat surfaces, which is beneficial for boosting high-performance catalytic and sensing technologies based on low-dimensional materials.

Early stages of silver nucleation on a two-dimensional (2D) substrate, here, monolayer epitaxial graphene (MEG) on SiC, play a critical role in the formation of application-specific Ag nanostructures. Therefore, it is of both fundamental and practical importance to investigate the growth steps when Ag adatoms start to form a new phase. In this work, we exploit density functional theory to study the kinetics of early-stage nuclei Ag-n (n = 1-9) assembly of Ag nanoparticles on MEG. We find that the Ag-1 monomer tends to occupy hollow site positions of MEG and interacts with the surface mainly through weak dispersion forces. The pseudoepitaxial growth regime is revealed to dominate the formation of the planar silver clusters. The adsorption and nucleation energies of Ag-n clusters exhibit evident odd-even oscillations with cluster size, pointing out the preferable adsorption and nucleation of odd-numbered clusters on MEG. The character of the interaction between a chemisorbed Ag-3 cluster and MEG makes it possible to consider this trimer as the most stable nucleus for the subsequent growth of Ag nanoparticles. We reveal the general correlation between Ag/MEG interaction and Ag-Ag interaction: with increasing cluster size, the interaction between Ag adatoms increases, while the Ag/MEG interaction decreases. The general trend is also supported by the results of charge population analysis, according to which the average charge per Ag adatom in a Ag-n cluster demonstrates a drastic decrement with cluster size increase. 2D-3D structural transition in Ag-n clusters was investigated. We anticipate that the present investigation is beneficial by providing a better understanding of the early-stage nucleation of Ag nanoparticles on MEG at the atomic scale. Specific interaction between odd-numbered Ag clusters preadsorbed onto the MEG surface and carbon monoxide (CO) as well as clusters stability at 300 K is discussed in terms of sensing applications.

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H-SiC. We show that by introducing Ar at higher temperatures, T-A(r), one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TA r is proposed and discussed. Increased T-A(r) is also shown to reduce the sp(3) hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which T-A(r) plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different T-A(r) and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 degrees C, and which is found to be independent of T-A(r). Higher T-A(r) leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. T-A(r) is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating a nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphenes sheet conductance as an in situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the T-4 dependence characteristic for a clean two-dimensional conductor. Based on our measurement, we predict the noise-equivalent power of similar to 10 - 22 W / <mml:msqrt> Hz</mml:msqrt> of the epigraphene bolometer at the low end of achievable temperatures.

In the present work, we elucidate the interplay among energetic bombardment effects in magnetron sputtering and defect generation in two-dimensional (2D) materials. Using deposition of gold (Au) layers on single-layer graphene (SLG) as a model system, we study the effect of pressure-distance (pd) product during magnetron sputtering on the pristine SLG properties. Raman spectroscopy, complemented by X-ray photoelectron spectroscopy, shows that for pd = 8.2 Pa center dot cm, Au layer deposition causes defects in the SLG layer, which gradually diminish and eventually disappear with increasing pd to 82.5 Pa center dot cm. Stochastic and deterministic simulations of the sputtering process, the gas-phase transport, and the interaction of sputtered and plasma species with the substrate surface suggest that defects in SLG primarily emanate from ballistic damage caused by backscattered Ar atoms with energies above 100 eV. With increasing pd, and thereby gas-phase scattering, such high energy Ar species become thermalized and hence incapable of causing atomic displacements in the SLG layer. The overall results of our study suggest that control of backscattered Ar energy is a potential path toward enabling magnetron sputtering for fabrication of multifunctional metal contacts in devices founded upon 2D materials.

Material growth on a dangling-bond-free interface such as graphene is a challenging technological task, which usually requires additional surface pre-treatment steps (functionalization, seed layer formation) to provide enough reactive sites. Being one of the most promising and adaptable graphene-family materials, epitaxial graphene on SiC, due to its internal features (substrate-induced n-doping, compressive strain, terrace-stepped morphology, bilayer graphene nano-inclusions), may provide pre-conditions for the enhanced binding affinity of environmental species, precursor molecules, and metal atoms on the topmost graphene layer. It makes it possible to use untreated pristine epitaxial graphene as a versatile platform for the deposition of metals and insulators. This mini-review encompasses relevant aspects of magnetron sputtering and electrodeposition of selected metals (Au, Ag, Pb, Hg, Cu, Li) and atomic layer deposition of insulating Al2O3 layers on epitaxial graphene on 4H-SiC, focusing on understanding growth mechanisms. Special deliberation has been given to the effect of the deposited materials on the epitaxial graphene quality. The generalization of the experimental and theoretical results presented here is hopefully an important step towards new electronic devices (chemiresistors, Schottky diodes, field-effect transistors) for environmental sensing, nano-plasmonics, and biomedical applications.

Understanding the interaction between noble metals (NMs) and epitaxial graphene is essential for the design and fabrication of novel devices. Within this framework, a combined experimental and theoretical investigation of the effect of vapor-deposited NM (silver [Ag] and gold [Au]) nanostructures on the vibrational and electronic properties of monolayer epitaxial graphene (MLG) on 4H-SiC is presented. Large sets of Raman scattering data are analyzed using supervised classification and statistical methods. This analysis enables identification of the specific Raman fingerprints of Au- and Ag-decorated MLG originating from different dispersion interactions and charge transfer at the metal nanostructure/MLG interface. It is found that Raman scattering spectra of Au-decorated MLG feature a set of allowed phonon modes similar to those in pristine MLG, whereas the stronger Ag physisorption triggers an activation of defect-related phonon modes and electron doping of MLG. A principal component analysis (PCA) and linear discriminant analysis (LDA) are leveraged to highlight the features in phonon dispersion of MLG that emanate from the NM deposition process and to robustly classify large-scale Raman spectra of metal-decorated graphene. The present results can be advantageous for designing highly selective sensor arrays on MLG patches decorated with different metals.

The ultimate goal of photocatalytic CO2 reduction is to achieve high selectivity for a single product with high efficiency. One of the most significant challenges is that expensive catalysts prepared through complex processes are usually used. Herein, gram-scale cubic silicon carbide (3C-SiC) nanoparticles are prepared through a top-down ball-milling approach from low-priced 3C-SiC powders. This facile mechanical milling strategy ensures large-scale production of 3C-SiC nanoparticles with an amorphous silicon oxide (SiOx) shell and simultaneously induces abundant surface states. The surface states are demonstrated to trap the photogenerated carriers, thus remarkably enhancing the charge separation, while the thin SiOx shell prevents 3C-SiC from corrosion under visible light. The unique electronic 3C-SiC tackles the challenge associated with low selectivity of photocatalytic CO2 reduction to C-1 compounds. In conjugation with efficient water oxidation, 3C-SiC nanoparticles can reduce CO2 into CH4 with selectivity over 90%.

The properties of 2D InN are predicted to substantially differ from the bulk crystal. The predicted appealing properties relate to strong in- and out-of-plane excitons, high electron mobility, efficient strain engineering of their electronic and optical properties, and strong application potential in gas sensing. Until now, the realization of 2D InN remained elusive. In this work, the formation of 2D InN and measurements of its bandgap are reported. Bilayer InN is formed between graphene and SiC by an intercalation process in metal-organic chemical vapor deposition (MOCVD). The thickness uniformity of the intercalated structure is investigated by conductive atomic force microscopy (C-AFM) and the structural properties by atomic resolution transmission electron microscopy (TEM). The coverage of the SiC surface is very high, above 90%, and a major part of the intercalated structure is represented by two sub-layers of indium (In) bonded to nitrogen (N). Scanning tunneling spectroscopy (STS) measurements give a bandgap value of 2 +/- 0.1 eV for the 2D InN. The stabilization of 2D InN with a pragmatic wide bandgap and high lateral uniformity of intercalation is demonstrated.

Ever-growing energy consumption in the world fosters the development of innovative energy technologies for sustainable energy production and storage. In this view, monolayer epitaxial graphene grown on 4H-SiC (MLEG/SiC) may be considered as a potential component of energy-related systems. The current paper deals with modelling of adsorption, diffusion and intercalation of hydrogen and lithium using MLEG/SiC model encompassing 2 x 2 graphene on root 3 x root 3R30 degrees surface reconstructed nine-bilayer 4H-SiC. The obtained results demonstrate a strong and stable chemisorption of hydrogen on top site of epitaxial graphene with limited surface mobility, while lithiation process occurs via formation of LiC6 phase. The stages of hydrogen and lithium intercalation beneath graphene are studied in detail by performing potential energy scan. Energetic preferences for MLEG/SiC with intercalated hydrogen and lithium atoms versus MLEG/SiC with top-adsorbed H and Li are revealed. Li intercalant-induced complete decoupling of the buffer layer from the SiC substrate followed by the formation of bilayer graphene with inequivalent doping per layer is proposed as an explanation of experimentally observed Raman G peak splitting in electrochemically lithiated epitaxial graphene on 4H-SiC. This work provides deep insights into the nature of atomic-scale processes at epitaxial graphene, which is essential for improving performance of energy-related devices.

Cubic silicon carbide (3C-SiC) is a promising photoelectrode material for solar water splitting due to its relatively small band gap (2.36 eV) and its ideal energy band positions that straddle the water redox potentials. However, despite various coupled oxygen-evolution-reaction (OER) cocatalysts, it commonly exhibits a much smaller photocurrent (<similar to 1 mA cm(-2)) than the expected value (8 mA cm(-2)) from its band gap under AM1.5G 100 mW cm(-2) illumination. Here, we show that a short carrier diffusion length with respect to the large light penetration depth in 3C-SiC significantly limits the charge separation, thus resulting in a small photocurrent. To overcome this drawback, this work demonstrates a facile anodization method to fabricate nanoporous 3C-SiC photoanodes coupled with Ni:FeOOH cocatalyst that evidently improve the solar water splitting performance. The optimized nanoporous 3C-SiC shows a high photocurrent density of 2.30 mA cm(-2) at 1.23 V versus reversible hydrogen electrode (V-RHE) under AM1.5G 100 mW cm(-2) illumination, which is 3.3 times higher than that of its planar counterpart (0.69 mA cm(-2) at 1.23 V-RHE). We further demonstrate that the optimized nanoporous photoanode exhibits an enhanced light-harvesting efficiency (LHE) of over 93%, a high charge-separation efficiency (Phi(sep)) of 38%, and a high charge-injection efficiency (Phi(ox)) of 91% for water oxidation at 1.23 V-RHE, which are significantly outperforming those its planar counterpart (LHE = 78%, Phi(sep) = 28%, and Phi(ox) = 53% at 1.23 V-RHE). All of these properties of nanoporous 3C-SiC enable a synergetic enhancement of solar water splitting performance. This work also brings insights into the design of other indirect band gap semiconductors for solar energy conversion.

We present optical and near-infrared (NIR, Y-, J-, H-band) observations of 42 Type Ia supernovae (SNe Ia) discovered by the untargeted intermediate Palomar Transient Factory survey. This new data set covers a broad range of redshifts and host galaxy stellar masses, compared to previous SN Ia efforts in the NIR. We construct a sample, using also literature data at optical and NIR wavelengths, to examine claimed correlations between the host stellar masses and the Hubble diagram residuals. The SN magnitudes are corrected for host galaxy extinction using either a global total-to-selective extinction ratio, R-V = 2.0, for all SNe, or a best-fit R-V for each SN individually. Unlike previous studies that were based on a narrower range in host stellar mass, we do not find evidence for a "mass step," between the color- and stretch-corrected peak J and H magnitudes for galaxies below and above log(M-*/M-circle dot) = 10. However, the mass step remains significant (3 sigma) at optical wavelengths (g, r, i) when using a global R-V, but vanishes when each SN is corrected using their individual best-fit R-V. Our study confirms the benefits of the NIR SN Ia distance estimates, as these are largely exempted from the empirical corrections dominating the systematic uncertainties in the optical.

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two different approaches have been used in the last years. From one side, several compliance substrates have been used to try to reduce both the defects and stress, while from another side, the first bulk growth has been performed to try to improve the quality of this material with respect to the heteroepitaxial one. From all these studies, a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters. This new knowledge will be the basis to solve the main issue of the 3C-SiC growth and reach the goal to obtain a material with low defects and low stress that would allow for realizing devices with extremely interesting characteristics.

In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-freestanding-bilayer epitaxial graphene on 4H-SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasifree-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene. (C) 2020 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license.

The paucity of research on hydrogen evolution reaction (HER) under neutral conditions, which is a more sustainable way to produce H-2 compared to acidic and alkaline HER, encourages the development of efficient catalytic materials and devices and deeper investigation of the mechanisms behind neutral HER. We present an electrode concept for facilitating HER under neutral conditions. The concept entails the use of annealing-reshaped silver (Ag) nanoparticle array on monolayer epitaxial graphene (MEG) on 4H-SiC. Measurements of HER performance show more positive onset potential of the cathodic HER for Ag-decorated MEG compared to that for pristine MEG, indicating improved water dissociation at Ag/MEG electrodes. Complementary morphological characterization, absorption measurements, and Raman mapping analysis enable us to ascribe the enhanced catalytic performance of electrodes decorated with 2 nm thick annealed Ag on the synergetic effect originating from simultaneous water reduction on circular Ag nanoparticles of 31 nm in diameter and on compressively strained Ag-free graphene regions. The overall results pave the way toward development of stable van der Waals heterostructure electrodes with a tunable metal-carbon interaction for fast HER under neutral conditions. (C) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

The aim of this Special Issue is to provide a scientific platform for recognized experts in the field of epitaxial graphene on SiC to present their recent studies towards a deeper comprehension of growth mechanisms, property engineering and device processing. This Special Issue gives readers the possibility to gain new insights into the nature of buffer layer formation, control of electronic properties of graphene and usage of epitaxial graphene as a substrate for deposition of different substances, including metals and insulators. We believe that the papers published within the current Special Issue develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic practical applications.

Present study aimed to develop nanocoating of cucurbit[7]uril (CB[7]) on surfaces of silicon and epitaxial graphene using drop casting and spin coating techniques. Here, we report a systematic study for the influence of sonication, probe sonication, and centrifugation time on the dispersion of CB[7] in aqueous solutions for the preparation of high-quality CB[7] nanocoating. Spin speed, spin time, and spin acceleration have been optimised to attain uniform films with minimum rms. Atomic force microscopy is used to study morphology, rms, and height of CB[7] nanocoating under different parameters. The presence of CB[7] on the nanocoating and its binding nature was determined by Infrared absorption and X-ray photoelectron spectroscopy. The present method of CB[7] nanocoating preparation is easy, versatile, scalable, and does not need the addition of electrolyte additives. Prepared CB[7] films are high-quality, uniform, and could be used as a novel sensing platform to tether required functional groups.

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0 degrees to 8 degrees by using the atmospheric pressure meta-organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4 degrees-3.5 degrees) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8 degrees provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

In this study, epitaxial graphene (EG) was grown on a 6H-SiC (0001) substrate via the thermal decomposition of SiC. Undoped and Cl- or N-doped molybdenum disulfide (MoS2) and tungsten disulfide (WS2) ultrathin films were spin-coated on the graphene surface. The scanning electron microscopy (SEM) images and topological atomic force microscopy (AFM) analysis showed good distribution of thin MoS2 and WS2 flakes on the EG surface. The X-ray photoelectron spectroscopy (XPS) confirmed the presence of Mo-related peaks of 3d(5/2) and 3d(3/2) at similar to 232.2 eV and 235.1 eV, respectively. It also represented peaks of W 4f(7/2) and 5p(5/2) at around 36.1 eV and 37.9 eV, respectively. Moreover, XPS results showed peaks at around 167.4 eV and 168.4 eV corresponding to S 2p for MoS2 and WS2, respectively. The XPS results also confirmed the presence of dopant elements in MoS2 and WS2 flakes. We fabricated sensors using undoped and chlorine- or nitrogen-doped MoS2 and WS2 ultrathin films for gas-sensing applications. These sensors were surveyed for ammonia (NH3) and nitrogen dioxide (NO2) gas sensing. As in NO2, both undoped sensors react with a decrease in relative sensor responses to NH3, hence showing n-type behavior. Doping MoS2 and WS2 with chlorine led to a higher response vis-a-vis the nitrogendoped sensors. The absolute relative response of Cl-doped WS2 and MoS2 was about 3.5 and 1.8 times more than that of their undoped counterparts toward NH3. A change of direction with a slightly smaller response (approximately x 0.8), however, could also be observed in the doping of MoS2 and WS2 with nitrogen. When exposed to NO2, the Cl-doped WS2 sensor response was 1.2 more than the N-doped one, while for MoS2 these values changed in the range of 1.2 - 1.6 for different flows of gas.

Precise manipulation of light-matter interactions has enabled a wide variety of approaches to create bright and vivid structural colors. Techniques utilizing photonic crystals, Fabry-Perot cavities, plasmonics, or high-refractive-index dielectric metasurfaces have been studied for applications ranging from optical coatings to reflective displays. However, complicated fabrication procedures for sub-wavelength nanostructures, limited active areas, and inherent absence of tunability of these approaches impede their further development toward flexible, large-scale, and switchable devices compatible with facile and cost-effective production. Here, a novel method is presented to generate structural color images based on monochromic conducting polymer films prepared on metallic surfaces via vapor phase polymerization and ultraviolet (UV) light patterning. Varying the UV dose enables synergistic control of both nanoscale film thickness and polymer permittivity, which generates controllable structural colors from violet to red. Together with grayscale photomasks this enables facile fabrication of high-resolution structural color images. Dynamic tuning of colored surfaces and images via electrochemical modulation of the polymer redox state is further demonstrated. The simple structure, facile fabrication, wide color gamut, and dynamic color tuning make this concept competitive for applications like multifunctional displays.