Defects tend to modify significantly the properties of semiconductors, such as transport properties, by increasing the scattering of electrons and phonons, or optical properties, by modifying the band structure and the Fermi level. The high interest of ScN thin films for thermoelectric applications results from the incorporation of oxygen, which is well known to be the source for their degenerate n-type state and their significant power factor. Indeed, oxygen acts as a donor defect when substituted to nitrogen. In this study, oxygen ion implantation was performed at a high damage level as a way to modify electrical properties through defect engineering. Hence, we measured the changes in electrical properties induced by oxygen implantation at room temperature. Two types of defects have been identified as being responsible for the change in resistivity, carrier concentration, mobility, and Seebeck coefficient. At first, the point-like defects, recombining from 440 K and onward, introduce localized states near the Fermi level, inducing a change in the conduction mode from a metallic-like to a hopping mechanism. The relationship between Mott's temperature and defect concentration has been clearly demonstrated through in situ resistivity measurements in the 80-750 K temperature range. Furthermore, these measurements highlight that oxygen induced defects result not only from ballistic effects, but also from chemical effects that are involved. Second, the complex-like defects introduce deep acceptor levels into the bandgap and act as scattering centers that modify the Debye temperature as well as the electron-phonon interactions. These complexes, likely between scandium vacancies and oxygen atoms (V-Sc-yO, y <= 4), are primarily responsible for the increase of the Seebeck coefficient and the reduced mobility. The concentration of such defects can qualitatively be assessed as their formation introduces an additional term, independent of temperature, in the variation of resistivity, mobility, and also the Seebeck coefficient. The recovery of the complex-like defects takes place at a minimum temperature of 750 K. Results show that the effectiveness of oxygen in creating defects exceeds that of noble gases in terms of concentration, demonstrating the promise of this approach to control the electrical properties of ScN.

In this work, we demonstrate epitaxial growth of multiprincipal-element alloy TiZrNbTa nitride thin films at substrate temperature below 50 degrees C. They were deposited on c-plane sapphire substrates by reactive high-power impulse magnetron sputtering (HiPIMS) without external heating. Reference layers were also grown by direct current magnetron sputtering (DCMS) at 400 degrees C as well as without external heating on the same type of substrates. X-ray diffraction and transmission electron microscopy analysis showed single phase films, with the HiPIMS films having a reduced mosaicity along both in-plane and out-of-plane orientations as compared to the DCMS layers grown at 400 degrees C. The optical and electrical properties determined by spectroscopic ellipsometry and room-temperature four-point probe measurements showed that the HiPIMS films exhibit higher absorbance in the near-infrared wavelength and higher electrical resistivity than the DCMS films deposited at 400 degrees C. Furthermore, ion-beam analysis of the HiPIMS grown films revealed nitrogen-to-metal ratio close to unity. This study shows that epitaxial film growth of multiprincipal-element nitrides can be realized without the need of intentional substrate heating provided that the growing film surface is irradiated by metal ions. This reduces the total process energy consumption by similar to 50 % (as compared to DCMS film at 400 degrees C) with the added benefit of possibility to grow film on temperature-sensitive substrates.

Fiber-textured and epitaxial NiO thin films were deposited on Si(100), c-Al₂O₃, and muscovite mica(001) sub-strates using reactive magnetron sputtering at substrate temperatures of 300 °C and 400 °C, to investigate theeffect of film thickness and substrate temperature on epitaxial growth of NiO films. The as-deposited filmsexhibited a face-centered cubic structure with a larger lattice constant, attributed to strain induced during thesputtering process. With an increase in substrate temperature to 400 °C, the d-spacing decreased due to strainrelease, approaching the NiO bulk value for the thickest film. The NiO film grown on Si(100) displayed fibertexture. On c-plane sapphire, NiO thin films exhibited twin domains and three-fold symmetry, consistent withexpected crystallographic orientation relationship for NaCl-structured materials onsapphire: (111)_NiO ‖ (0001)_Al2O3 and [011]_NiO ‖ [1010]_Al2O3, [011]_NiO ‖[1010]_Al2O3. On muscovite mica(001)substrates, the observed epitaxial shows that the mechanism is conventional epitaxy, rather than van der Waalsepitaxy, consistent with the epitaxial growth of the non-layered non-van-der-Waals compound NiO. The epitaxialrelationship was identified as of (111)_NiO‖(001)_Mica and [011]_NiO ‖[010]_Mica, [011]_NiO ‖[010]_Mica.

Fully inorganic or metallic nanocomposite coatings are promising materials for various applications but face limitations in term of their synthesis. A complementary synthesis process, Physical Vapor Deposition combined with magnetron sputtering and plasma-assisted gas-phase aggregation produced Cu nanoparticles embedded in metallic matrix. In this study, the effect of embedded nanoparticles on the matrix structure was investigated. Al and Ni were selected as matrix materials due to their different sputter yields leading to different growth modes film morphologies and difference in surface energy. Depending on the nanocomposite and deposition conditions, defects such as nodular growth were occasionally observed. These growth anomalies originated from the presence of nanoparticles creating new nucleation points for the matrix to grow disturbing the grain growth around it. Key factors responsible for their formation include the surface energy difference between the NPs and the matrix and the geometrical disruption occurring for large NP. In extreme cases with a high concentration of nanoparticles, coatings entirely constituted of nodular defects were produced which can be advantageous for applications needing large specific surface area.

(CoCrFeNi)_1−xMo_x thin films with various Mo content (0–10 at.%) were grown by magnetron sputtering on a stainless steel substrate. The films with 0–2 at.% presented two crystal structures: one FCC phase and one sigma phase, while films with higher Mo content only had the FCC structure. All films have a (111) texture and follow the topography of the substrate. The corrosion resistance of the films was evaluated in 0.05 M H₂SO₄ at room temperature and at 80 °C. It was observed that the corrosion current densities considerably decreased for Mo > 2 at%, and that the current densities were higher at the elevated temperature. Scanning Kelvin Probe Force Microscopy showed a large potential difference between the main FCC phase and sigma phase for the Mo0–2 films. This would suggest that preferential dissolution of the FCC phase occurs over the sigma and reduces the corrosion resistance. Such preferential dissolution does not occur for the higher Mo content films with only the FCC phase. The high corrosion resistance was also attributed to the inhibition of Fe and Cr dissolution by Mo and the stabilisation of the Cr enriched oxide by incorporating Mo oxides into the passive film, identified by X-ray photoelectron spectroscopy. The low corrosion current densities (below 1 µA/cm²) make these thin films possible candidates for protective coatings of bipolar plates in PEM fuel cells.

CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at. % W substituting Cr induce flat electronic bands and push the Fermi level E-F into the conduction band while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity sigma and high Seebeck coefficient alpha and, hence, a high thermoelectric power factor alpha(2)sigma. To investigate this possibility, epitaxial CrWxNz films were grown on c-sapphire by dc-magnetron sputtering. However, even films with the lowest W content (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high alpha. Nevertheless, the films exhibit a sizeable power factor of alpha(2)sigma similar to 4.7 x 10(-4) W m(-1) K-2 due to high sigma similar to 700 S cm(-1), and a moderate alpha similar to - 25 mu V/K. Increasing h-Cr2N fractions in the 0.03 < x <= 0.19 range monotonically increases sigma, but severely diminishes alpha leading to two orders of magnitude decrease in alpha(2)sigma. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN are important for realizing a high thermoelectric power factor in CrWxNz films.

The electronic structure of S⁢c1−𝑥⁢V𝑥⁢N𝑦 epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on S⁢c0.75⁢V0.25⁢N indicate that V 3⁢𝑑 states lie in the band gap of the parent ScN compound in the vicinity of the Fermi level. Thus, theoretically, the presence of light (dispersive) bands at the Γ point with band multiplicity is expected to lead to lower electrical resistivity, while flat (heavy) bands at 𝑋−𝑊−𝐾 symmetry points are associated with higher Seebeck coefficients than that of ScN. Hence, to probe the thermoelectric properties experimentally, epitaxial S⁢c1−𝑥⁢V𝑥⁢N𝑦 thin film samples were deposited on MgO(001) substrates. All the samples showed N substoichiometry and pseudocubic crystal structure. The N-vacancy-induced states were visible in the Sc 2⁢𝑝 x-ray absorption spectroscopy spectra. The reference ScN and S⁢c1−𝑥⁢V𝑥⁢N𝑦 samples up to 𝑥=0.12 were 𝑛 type, exhibiting carrier concentration of 1021 c⁢m−3, typical for degenerate semiconductors. For the highest V alloying of 𝑥=0.15, holes became the majority charge carriers, as indicated by the positive Seebeck coefficient. The underlying electronic structure and bonding mechanisms in S⁢c1−𝑥⁢V𝑥⁢N𝑦 influence the electrical resistivity, Seebeck coefficient, and Hall effect. Thus, this paper contributes to the fundamental understanding to correlate defects and thermoelectric properties to the electronic structure in the Sc-N system with V alloying.

Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely, high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the Fe nanoparticles remained intact without intermixing with the matrix. The electrical and thermal transport properties of the nanocomposites were investigated and compared to those of a monolithic CrN film. The measured thermoelectric properties revealed an increase in the Seebeck coefficient, with a decrease of hall carrier concentration and an increase of the electron mobility, which could be explained by energy filtering by internal phases created at the NP/matrix interface. The thermal conductivity of the final nanocomposite was reduced from 4.8 W m(-1) K-1 to a minimum of 3.0 W m(-1) K-1. This study shows prospects for the nanocomposite synthesis process using nanoparticles and its use in improving the thermoelectric properties of coatings.

Hafnium diboride (HfB2) is a promising candidate as a seed layer for GaN growth on Si substrates due to its excellent lattice and thermal coefficients matching with both materials. This work investigates the epitaxial growth of AlB2-type non-stoichiometric HfB2 (HfB(2+delta )with -0.1 < delta < 0.6) thin films on Si(111) using magnetron co-sputtering. We demonstrated that the process temperature significantly affected the surface roughness (R-RMS similar to 0.5-4 nm), film composition, and the nucleation of secondary impurity phases. Films deposited between 700 and 900 degrees C exhibit epitaxial growth on the Si substrate with a well-defined relationship of ( 0001 ) (HfB 2) & Vert; ( 111 ) (Si )and [ 11 2 <overline> 0 ] (HfB 2) & Vert; [ 1 1 <overline> 0 ] (Si). Detailed x-ray diffraction and scanning transmission electron microscopy analyses reveal that impurity phases detected at high temperatures are primarily carbon-rich phases, identified as HfCx or HfCxBy. Interestingly, this secondary phase's crystal orientation follows the orientation of its surroundings. The different findings in terms of contamination (C and O) and deposition temperature offer valuable insights for further growth optimizing of high-quality epitaxial HfB2 thin films on Si(111) for future GaN-on-Si integration.

CrN-based thin films are emerging as thermoelectric materials for energy harvesting. Their thermoelectric properties depend on phase composition and stoichiometry, necessitating control over the nitrogen content and how it affects the phase composition. Here, the effect of high-temperature ammonia annealing on the thermoelectric properties as well as crystal structure of thin films of Cr-N on c-plane sapphire (Al2O3(0001)) was investigated. Single-phase (cubic CrN) and mix-phase (cubic CrN + hexagonal-Cr2N) Cr-N films were annealed in ammonia, converting any secondary phase of hexagonal Cr2N to cubic CrN. The thermoelectric properties of the films that contained a secondary phase of hexagonal (CrN)-N-2 greatly improved upon annealing, with an increase of 900% to 0.5 x 10-3 W m(-1) K-2 for the film annealed at 800 degrees C for 2 h. Annealing of single-phase films of cubic CrN resulted in films with near-insulating electrical properties. For the thermoelectric applications of CrN, ammonia annealing can be beneficial over meticulous deposition control.

We report results from a study of the local structure of hydrated nanocrystalline 2 �m films of the well known proton conductor BaZr1-xScxO3-x/2 with x = 0.45, 0.54 and 0.64, using infrared (IR) spectroscopy. The films were prepared by magnetron sputtering. Analysis of the IR spectra focused on the O–H stretching region (2000—3700 cm-1), which reveals the presence of several distinct O–H stretching bands for which the intensity and frequency of each band vary in an unsystematic manner with Sc concentration. The spectra for the two higher Sc concentrations, x = 0.54 and 0.64, exhibit a distinct, highly intense O–H stretching band centered at around 3400–3500 cm-1, which is assigned to relatively symmetric, weakly hydrogen-bonding, proton configurations. The spectrum for the lower Sc concentration, x = 0.45, does not feature such a band but a broader, weaker, O–H stretching band between approximately 2500 and 3700 cm-1, suggesting that the protons are more homogeneously distributed over a range of different local proton coordinations in this relatively weakly doped material. A comparison to the IR spectra of powder samples of similar compositions suggests that for x = 0.45, the spectra and proton coordination of films and powder samples are similar, whereas for x = 0.54 and 0.64, a larger fraction of protons seems to be located in weakly hydrogen-bonding proton configurations in the films compared to the respective powder samples.

In this Letter, we investigate the mechanical stability of HEA-based multilayers after Xe-ion irradiation. CrFeCoNi/TiNbZrTa metallic and nitride thin films with a bilayer thickness of 30 nm were grown by reactive dc-magnetron sputtering on Al2O3(0001) substrates for irradiation studies and on Si(100) substrates for other characterizations. The films were subjected to 3-MeV Xe-ion irradiation at room temperature (RT) and at 500 degrees C. The crystal structure and mechanical properties of the films before and after irradiation were studied by x-ray diffraction and nanoindentation. Before irradiation, both the metallic and nitride multilayers displayed a lower hardness (7 and 20 GPa, respectively). Annealing at 500 degrees C for 150 min increased the hardness of the multilayer samples, but it also induced intermixing of elements between the sublayers of the metallic multilayer. Irradiation hardening was observed only in the metallic multilayer at room temperature. When comparing the effects of irradiation damage vs the effects of annealing on the mechanical properties, it was observed that annealing the multilayers had a more pronounced effect.

Integrating interfacial molecular nanolayers (MNL) with inorganic nanolayers is of interest for understanding processing-structure/chemistry correlations in hybrid nanolaminates. Here, we report the synthesis of Co/biphenyldithiol (BPDT)/Co nanolayer sandwiches by metal sputter-deposition and molecular sublimation. The density and surface roughness of the Co layers deposited on the native oxide are invariant with the Ar pressure pAr during deposition. In contrast, the Co layer roughness rCo deposited on top of the BPDT MNL increases with pAr, and correlates with a higher degree of Co oxidation. Increased roughening is attributed to MNL-accentuated self-shadowing of low mobility Co atoms at high pAr, which consequently increases Co oxidation. These results indicating MNL-induced effects on the morphology and chemistry of the inorganic layers should be of importance for tailoring nanolayered hybrid interfaces and laminates. Co/biphenyldithiol (BPDT)/Co nanolayer sandwiches are synthesized by metal sputter deposition and molecular sublimation. These results indicate molecular-nanolayer-induced effects on the morphology and chemistry, of interest for hybrid nanolaminates.

The utilization of polarized neutrons is of great importance in scientific disciplines spanning materials science, physics, biology, and chemistry. However, state-of-the-art multilayer polarizing neutron optics have limitations, particularly low specular reflectivity and polarization at higher scattering vectors/angles, and the requirement of high external magnetic fields to saturate the polarizer magnetization. Here, we show that, by incorporating (B4C)-B-11 into Fe/Si multilayers, amorphization and smooth interfaces can be achieved, yielding higher neutron reflectivity, less diffuse scattering, and higher polarization. Magnetic coercivity is eliminated, and magnetic saturation can be reached at low external fields (>2 militesla). This approach offers prospects for substantial improvement in polarizing neutron optics with nonintrusive positioning of the polarizer, enhanced flux, increased data accuracy, and further polarizing/analyzing methods at neutron scattering facilities.

High-entropy materials, an exciting new class of structural materials involvingfive or more elements, are emerging as unexplored ground forsuperconductors. Here, the effects of nitrogen stoichiometry are investigatedon local chemical structure of TiZrNbTa-based thin films by variousX-ray-based techniques. Lattice distortion and short-range order of a set ofTiZrNbTaNxsamples, including bond lengths of different atomic pairs andcoordination numbers of substituting atoms are quantitatively studied. Themaximum superconducting transition temperature Tcis found at 10 K for anear-stoichiometric (TiZrNbTa)N1.08film, which is>8 K measured for ametallic TiZrNbTa film. The underlying electronic structure and chemicalbonding in these high entropy nitrides thus influence the superconductingmacroscopic properties.

A series of c-TiAlN/ h-Cr2N multilayer films with modulation periods Lambda of 10, 20 and 30 nm and thickness ratios (Cr2N thickness /Lambda) of 25%, 50% and 75% were prepared by dc magnetron sputtering on the Si substrate. The microstructures were characterized by scanning electron microscopy, x-ray diffraction, and the mechanical properties were measured by curvature measurement method and nanoindentation. With the Cr2N ratio increasing from 25% to 75%, the orientation of Cr2N layers changed from a randomly orientation to a 0001 preferential orientation, while inversely, the c-TiAlN layer changed from a 001 preferential orientation to a 111 preferential orientation or a randomly orientation. In the meantime, and regardless of the modulation period, the lattice parameter of c-TiAlN decreased from 4.16 angstrom to 4.12 angstrom and was explained by an increase of tensile stress between + 0.2 and + 1.3 GPa when the increase of Cr2N% in the modulation. With the increase of Cr2N ratio, the morphology of the film changed and led to surface with apparent porosity and large grain sizes of 100 x 300 nm. The film with 25% Cr2N ratio and modulation period of 20 nm exhibited the highest hardness reaching 22 +/- 1.3 GPa and reduced Young's modulus of 253 +/- 6 GPa.

Epitaxial NiO and CrN thin films were deposited on a single-crystal Al2O3(11¯02) (r-plane sapphire) using magnetron sputtering. The two materials were intentionally deposited into two different deposition chamber designs and under different conditions (temperature, pressure, gases, and energy of sputtered particles). Despite the differences in the deposition condition and material system, both materials had the same feature with uncommon tilted epitaxial growth. Through an in-depth x-ray diffraction analysis of the NaCl (B1)-structured materials on r-plane sapphire, the full twin domain epitaxial relations were determined and can be described as (110)NaCl(B1)∥(44¯03)Al2O3 and [11¯2]NaCl(B1)∥[1¯1¯20]Al2O3⁠. This relationship differs from the previously observed orientation of (100)NaCl(B1)∥(11¯02)Al2O3 and [100]NaCl(B1)∥[101¯0]Al2O3⁠. These results are of general relevance for the growth of the extended NaCl (B1)-structured cubic material family onto a r-plane sapphire substrate where similar epitaxial growth can be expected.

Multicomponent or high-entropy oxide films are of interest due to their remarkable structure and properties. Here, energetic ion irradiation is utilized for controlling the phase formation and structure of AlCrNbTi oxide at growth temperature of 500 degrees C. The ion acceleration is achieved by using a high-power impulse magnetron sputtering (HiPIMS) discharge, accompanied by a 10 & mu;s-long synchronized substrate bias (Usync), to minimize the surface charging effect and accelerate early-arriving ions, mainly Al+, O+, Ar2+, and Al2+. By increasing the magnitude of Usync from-100 V to-500 V, the film structure changes from amorphous to single-phase corundum, followed by the formation of high-number-density stacking faults (or nanotwins) at Usync =-500 V. This approach paves the way to tailor the high-temperature-phase and defect formation of oxide films at low growth temperature, with prospects for use in protective-coating and dielectric applications.

Noble-gas implantation was used to introduce defects in n-type degenerate ScN thin films to tailor their transport properties. The electrical resistivity increased significantly with the damage levels created, while the electron mobility decreased regardless of the nature of the ion implanted and their doses. However, the transport property characterizations showed that two types of defects were formed during implantation, named point-like and complex-like defects depending on their temperature stability. The point-like defects changed the electrical conduction mode from metallic-like to semiconducting behavior. In the low temperature range, where both groups of defects were present, the dominant operative conduction mechanism was the variable range hopping conduction mode. Beyond a temperature of about 400 K, the point-like defects started to recover with an activation energy of 90 meV resulting in a decrease in resistivity, independent of the incident ion. The complex-like defects were, therefore, the only remaining group of defects after annealing above 700 K. These latter, thermally stable at least up to 750 K, introduced deep acceptor levels in the bandgap resulting in an increase in the electrical resistivity with higher carrier scattering while keeping the metallic-like behavior of the sample. The generation of both types of defects, as determined by resistivity measurements, appeared to occur through a similar mechanism within a single collision cascade.

c-TiAlN/h-Cr2N multilayer thin films, with modulation period lambda of 10 nm, 20 nm, and 30 nm and different Cr2N/lambda thickness ratios (25 %, 50 % and 75 %), were deposited on c-plane sapphire using reactive DC magnetron sputtering. All multilayers exhibited preferred orientation [Cr2N(0001)/ TiAlN(111)](x), regardless of the modulation period and thickness ratios. X-ray diffraction f-scans revealed an influence of the Cr2N layer thickness on the overall orientation quality of the multilayer, where the thicker the Cr2N layer the higher orientation quality. Atomically resolved high-angle annular dark-field scanning transmission electron microscopy revealed well defined and homogeneous atom stacking in the Cr2N layers. In contrast, the cubic TiAlN layer was found to be composed of coherent cubic AlN-rich and TiN-rich regions. Additionally, the TiAlN layers were found with a higher density of grain boundaries compared to the Cr2N layers. Mechanical properties evaluation revealed that the film with a 20 nm period and 75 % Cr2N thickness ratio exhibited the highest hardness of 27.11 +/- 0.72 GPa and an reduced elastic modulus of 349.1 +/- 6.84 GPa. The hardness increased as the thickness of Cr2N increased, until reaching 10 nm, after which it remained at a high level (similar to 25 GPa).

Phase formation, morphology, and optical properties of Ti(O,N) thin films with varied oxygen-to- nitrogen ration content were investigated. The films were deposited by magnetron sputtering at 500 & DEG;C on Si(100) and c-plane sapphire substrate. A competition between a NaCl B1 structure TiN1-xOx, a rhombohedral structure Ti-2(O1-yNy)(3), and an anatase structure Ti(O1-zNz)(2) phase was observed. While the N-rich films were composed of a NaCl B1 TiN1-xOx phase, an increase of oxygen in the films yields the growth of rhombohedral Ti-2(O1-yNy)(3) phase and the oxygen-rich films are comprised of a mixture of the rhombohedral Ti-2(O1-yNy)(3) phase and anatase Ti(O1-zNz)(2) phase. The optical properties of the films were correlated to the phase composition and the observation of abrupt changes in terms of refractive index and absorption coefficient. The oxide film became relatively transparent in the visible range while the addition of nitrogen into films increases the absorption. The oxygen rich-samples have bandgap values below 3.75 eV, which is higher than the value for pure TiO2, and lower than the optical bandgap of pure TiN. The optical properties characterizations revealed the possibility of adjusting the band gap and the absorption coefficient depending on the N-content, because of the phases constituting the films combined with anionic substitution.

A common design of sputtering systems is to integrate many magnetron sources in a tilted closed-field configuration, which can drastically affect the magnetic field in the chamber and thus plasma characteristics. To study this effect explicitly, multicomponent TiZrNbTaN coatings were deposited at room temperature using direct current magnetron sputtering (DCMS) and high-power impulse magnetron sputtering (HiPIMS) with different substrate biases. The coatings were characterized by x-ray diffraction, scanning electron microscopy, nano-indentation, and energy dispersive x-ray spectroscopy. Magnetic field simulations revealed ten times higher magnetic field strengths at the substrate in single-magnetron configuration when compared to the closed-field. As a result, the substrate ion current increased similar to 3 and 1.8 times for DCMS and HiPIMS, respectively. The film microstructure changed with the discharge type, in that DCMS coatings showed large sized columnar structures and HiPIMS coatings show globular nanosized structures with (111) orientation with a closed-field design. Coatings deposited from a single source showed dense columnar structures irrespective of the discharge type and developed (200) orientation only with HiPIMS. Coatings deposited with closed-field design by DCMS had low stress (0.8 to -1 GPa) and hardness in the range from 13 to 18 GPa. Use of HiPIMS resulted in higher stress (-3.6 to -4.3 GPa) and hardness (26-29 GPa). For coatings deposited with single source by DCMS, the stress (-0.15 to -3.7 GPa) and hardness were higher (18-26 GPa) than for coatings grown in the closed-field design. With HiPIMS and single source, the stress was in the range of -2.3 to -4.2 GPa with a similar to 6% drop in the hardness (24-27 GPa).

Growth temperature (Ts) and ion irradiation energy (Ei) are important factors that influence film growth as well as their properties. In this study, we investigate the evolution of crystal structure and residual stress of TiNb-CrAlHfN films under various Ts and Ei conditions, where the latter is mainly controlled by tuning the flux of sputtered Hf ions using bipolar high-power impulse magnetron (BP-HiPIMS). The results show that TiNbCrAlHfN films exhibit the typical FCC NaCl-type structure. By increasing Ts from room temperature to 600 degrees C, the film texture changes from high-surface-energy (111) to low-surface-energy (100) accompanied by a higher crystal-linity in the out-of-plane direction and a more disordered growth tilt angle to the surface plane. In addition, compressive stress decreases with increasing Ts, which is ascribed to changes in the film growth both in the early and post-coalescence stages and more tensile thermal stress at elevated Ts. In contrast, a clear texture transition window is seen under various Ei of Hf+ ions, i.e., high-surface-energy planes change to low-surface-energy planes as Ei exceeds-110 eV, while low-surface-energy planes gradually transform back to high-surface-energy planes when Ei increases from 210 to 260 eV, indicating renucleation events for Ei > 210 eV. Compressive stress in-creases with increasing Ei but is still lower than that of a reference series with DC substrate bias UDC =-100 V. The study shows that it is possible to tailor properties of FCC-structured high-entropy nitrides by varying Ts and Ei in a similar fashion to conventional transition metal nitrides using the approach of unipolar and bipolar HiPIMS co-sputtering.

NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperature of 300 degrees C using pulsed dc reactive magnetron sputtering. We characterize the structure and optical properties of NiO changes as functions of the oxygen content. NiO with the cubic structure, single phase, and predominant orientation along (111) is found on both substrates. X-ray diffraction and pole figure analysis further show that NiO on the Si(100) substrate exhibits fiber-textured growth, while twin domain epitaxy was achieved on c-Al2O3, with NiO(111) k Al2O3(0001) and NiO[1 (1) over bar0]k Al2O3[10 (1) over bar0] or NiO[(1) over bar 10]k Al2O3[2 (1) over bar(1) over bar0] epitaxial relationship. The oxygen content in NiO films did not have a significant effect on the refractive index, extinction coefficient, and absorption coefficient. This suggests that the optical properties of NiO films remained unaffected by changes in the oxygen content.

The epitaxial growth of boron rich hexagonal zirconium diborides (h-ZrB2+delta) thin films on Si(111) substrates using the magnetron co-sputtering technique with elemental zirconium and boron is reported. The effect of process temperature (700-900 degrees C) on the compositions and epitaxy quality was investigated. The chemical composition of the films was found to have a higher boron to zirconium ratio than the ideal stoichiometric AlB2-type ZrB2 and was observed to be sensitive to process temperature. Films deposited at 700 degrees C exhibited intense diffraction peaks along the growth direction corresponding to (000l) of h-ZrB2 using both lab and synchrotron-based x-ray diffractograms. The thermal and compositional stability of the epitaxial h-ZrB2+delta film was further evaluated under a nitrogen-rich environment through isothermal annealing which showed a reduction in in-plane misorientation during thermal annealing. The relative stability of deviating compositions and the energetics of impurity incorporations were analyzed using density functional theory simulations, and the formation of native point defects or impurity incorporation in h-ZrB2 was found to be endothermic processes. Our experimental results showed that an epitaxial thin film of h-ZrB2+delta can be grown on Si(111) substrate using a magnetron co-sputtering technique at a relatively low processing temperature (700 degrees C) and has the potential to be used as a template for III-nitride growth on Si substrates.

Thin films of BaZr1-xScxO3-x/2, (0 ≤ x ≤ 0.64), well known as proton conducting solid electrolytes for intermediatetemperature solid oxide fuel cell, were deposited by magnetron sputtering. X-ray diffraction analysis of theas deposited films reveals the presence of single-phase perovskite structure. The films were deposited on fourdifferent substrates (c-Al2O3, LaAlO3〈100〉, LaAlO3〈110〉, LaAlO3〈111〉) yielding random, (110)- or (100)-orientedfilms. The stability of the as-deposited films was assessed by annealing in air at 600 ◦C for 2 h. Theannealing treatment revealed instabilities of the perovskite structure for the (110) and randomly oriented films,but not for (100) oriented film. The instability of the coating under heat treatment was attributed to the lowoxygen content in the film (understoichiometry) prior annealing combined with the surface energy and atomiclayers stacking along the growth direction. An understoichiometric (100) oriented perovskite films showedhigher stability of the structure under an annealing in air at 600 ◦C.

Low-temperature epitaxial growth of multicomponent alloy-based thin films remains an outstanding challenge in materials science and is important for established fundamental properties of these complex materials. Here, Cantor nitride (CrMnFeCoNi)N thin films were epitaxially grown on MgO(100) substrates at low deposition temperature by magnetic-field-assisted dc-magnetron sputtering, a technique where a magnetic field is applied to steer the dense plasma to the substrate thereby influencing the flux of Ar-ions bombarding the film during growth. Without ion bombardment, the film displayed textured growth. As the ion flux was increased, the films exhibited epitaxial growth. The epitaxial relationship between film and substrate was found to be cube on cube (001)film parallel to(001)MgO, [100]film parallel to[100]MgO. The epitaxy was retained up to a thickness of approximately similar to 100 nm after which the growth becomes textured with a 002 out-of-plane orientation. The elastic constants determined by Brillouin inelastic light scattering were found to be C-11 = 320 GPa, C-12 = 125 GPa, and C-44 = 66 GPa, from which the polycrystalline Youngs modulus was calculated as 204 GPa and Poissons ratio = 0.32, whereas available elastic properties still remained very scarce. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy. Film-substrate bonding is usually weakened by harnessing natural van der Waals layers (e.g., graphene) on substrate surfaces, but this is difficult to achieve in non-layered materials. Here, we demonstrate van der Waals epitaxy of stress-free films of a non-layered material VO2 on mica. The films exhibit out-of-plane 010 texture with three inplane orientations inherited from the crystallographic domains of the substrate. The lattice parameters are invariant with film thickness, indicating weak film-substrate bonding and complete interfacial stress relaxation. The out-of-plane domain size scales monotonically with film thickness, but the in-plane domain size exhibits a minimum, indicating that the nucleation of large in-plane domains supports subsequent island growth. Complementary ab initio investigations suggest that VO2 nucleation and van der Waals epitaxy involves subtle polarization effects around, and the active participation of, surface potassium atoms on the mica surface. The VO2 films show a narrow domain-size-sensitive electrical-conductiv ity-temperature hysteresis. These results offer promise for tuning the properties of stress-free van der Waals epitaxial films of non-layered materials such as VO2 through microstructure control (C) 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).

Thin films of CrMoVN are deposited on c-plane sapphire (Al2O3 (0001)) by direct current reactive magnetron sputtering, to investigate the effects of Mo and V addition to CrN-based films. All films grow epitaxially, but Mo incorporation affects the crystal structure and nitrogen content. All films in the CrMoVN series are understoichiometric in nitrogen, but largely retain the NaCl B1 structure of stoichiometric CrN films. Addition of vanadium increases the phase-stability range of the cubic phase, allowing for higher solubility of Mo than what has previously been reported for cubic CrN. The Seebeck coefficient and electrical resistivity are greatly affected by the alloying, showing a decrease of the Seebeck coefficient along with a decrease in resistivity. Cr0.83Mo0.11V0.06Nz shows a 70% increase in power factor (S2 sigma = 0.22 mW m-1 K-2) compared to the reference CrNz (S2 sigma = 0.13 mW m-1 K-2). Thermoelectric (TE) materials are in use in several applications, but often have too low efficiency. For more widespread use of these materials, fundamental research on TE material system is necessary. In this work, alloying in CrN, with the hope of pushing a material with great promise closer to applications, is investigated.image (c) 2023 WILEY-VCH GmbH

As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical highentropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher temperatures. The same holds true for Cantor alloy-based ceramics (nitrides and oxides), where phase formation is extremely sensitive to process parameters such as the amount of reactive gas. This study combines theoretical and experimental methods to understand the phase formation in nitrogen-containing CrFeCoNi thin films. Density functional theory calculations considering three competing phases (CrN, Fe-Ni and Co) show that the free energy of mixing, Delta G of (CrFeCoNi)(1-x)N-x solid solutions has a maximum at x = 0.20-0.25, and AG becomes lower when x < 0.20 and x > 0.25. Thin films of (CrFeCoNi)1-xNx (0.14 >= x <= 0.41) grown by magnetron sputtering show stabilization of the metallic fcc when x <= 0.22 and the stabilization of the NaCl B1 structure when x > 0.33, consistent with the theoretical prediction. In contrast, films with intermediate amounts of nitrogen (x = 0.22) grown at higher temperatures show segregation into multiple phases of CrN, Fe-Ni-rich and Co. These results offer an explanation for the requirement of kinetically limited growth conditions at low temperature for obtaining single-phase CrFeCoNi Cantor-like nitrogen-containing thin films and are of importance for understanding the phase-formation mechanisms in multicomponent ceramics. The results from the study further aid in making correlations between the observed mechanical properties and the crystal structure of the films.

The VO2 metastable (B) phase is of interest for applications in temperature sensing, bolometry, and Li-ion batteries. However, single-phase growth of thin films of this metastable phase is a challenge because vanadium oxide exhibits many polymorphs and the VO2 stable (M1) phase is usually present as a secondary phase. Additionally, the phase transition at 350 degrees C in the (B) phase severely narrows the processing window for achieving phase-pure films. Here, single-phase growth of 5-to 50-nm thick VO2 (B) films on muscovite, mica, by pulsed direct-current reactive magnetron sputtering at 400 degrees C is demonstrated. The films are phase-pure and exhibit a high density of 4.05 g cm(-3) and low resistivity of about 50 m Omega cm at 30 degrees C. Increasing the film thickness to 100 nm results in a V2O5-capped VO2 (B) film with a resistivity of 8000 m Omega cm. These results indicate that the stability of the VO2 (B) phase is sensitive to in situ annealing during deposition. These findings should serve as a basis to design processes to exclusively obtain phase-pure VO2 (B) films.

Mg3Bi2-based compounds are of great interest for thermoelectric applications near room temperature. Here, undoped p-type Mg3SbxBi2-x thin films were synthesized using magnetron sputtering (three elemental targets in Ar atmosphere) with a growth temperature of 200 ? on three different substrates, namely, Si as well as c- and r-sapphire. The elemental composition was measured with energy-dispersive x-ray spectroscopy and the structure by x-ray diffraction. The electrical resistivity and the Seebeck coefficient were determined under He atmosphere from room temperature to the growth temperature. All samples are crystalline exhibiting the La2O3-type crystal structure (space group P-3m1). The observed thermoelectric response is consistent with a semiconductive behavior. With increasing x, the samples become more electrically resistive due to the increasing bandgap. High Bi content (x < 1) is thus beneficial due to lower resistivity and a higher power factor near room temperature. Thermoelectric thin films synthesized at low temperatures may provide novel pathways to enable flexible devices on polymeric and other heat-sensitive substrates.

Refractory high-entropy protective coatings are of interest for nuclear fuel cladding applications due to their corrosion resistant properties and irradiation resistance at elevated temperature. Here, TiZrNbTaV metallic and (TiZrNbTaV)N films were deposited by magnetron co-sputtering. The metal elemental contents of both films were nearly equiatomic. These films were irradiated by Xe ions at room temperature and 500 degrees C, and examined by X-ray diffraction and transmission electron microscopy. The as-deposited (TiZrNbTaV)N film showed a single NaCl-type fcc phase and a pronounced columnar growth structure, which could remain intact after irradiation treatments. In contrast, the as-deposited TiZrNbTaV film exhibited an amorphous structure and formed a bcc phase structure after irradiation at 500 degrees C. The TiZrNbTaV film after irradiation at 500 degrees C composed of depth -dependent size of grains. This distribution of grain size is consistent with simulated displacement damage. The stable structure of (TiZrNbTaV)N film under high temperature irradiation indicates that these materials have potential for use as protective coatings for nuclear fuel claddings.

Conducting polymer poly(3,4-ethylenedioxythiophene) nanowires(PEDOTNWs) were synthesized by a modified self-assembled micellar soft-templatemethod, followed by fabrication by vacuum filtration of self-supportingexfoliated WSe2-nanosheet (NS)/PEDOT-NW composite films.The results showed that as the mass fractions of WSe2 NSsincreased from 0 to 20 wt % in the composite films, the electricalconductivity of the samples decreased from & SIM;1700 to & SIM;400S cm(-1), and the Seebeck coefficient increased from12.3 to 23.1 & mu;V K-1 at 300 K. A room-temperaturepower factor of 44.5 & mu;W m(-1) K-2 was achieved at 300 K for the sample containing 5 wt % WSe2 NSs, and a power factor of 67.3 & mu;W m(-1) K-2 was obtained at 380 K. The composite film containing5 wt % WSe2 NSs was mechanically flexible, as shown byits resistance change ratio of 7.1% after bending for 500 cycles ata bending radius of 4 mm. A flexible thermoelectric (TE) power generatorcontaining four TE legs could generate an output power of 52.1 nWat a temperature difference of 28.5 K, corresponding to a power densityof & SIM;0.33 W/m(2). This work demonstrates that the fabricationof inorganic nanosheet/organic nanowire TE composites is an approachto improve the TE properties of conducting polymers.

Chromium-based nitrides are used in hard, resilient coatings and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigate the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. The small amount of N vacancies causes Cr 3d and N 2p states to appear at the Fermi level and reduces the band gap in Cr0.51N0.49. Incorporating holes by alloying of V in N-deficient CrN results in an enhanced thermoelectric power factor with marginal change in the charge transfer of Cr to N compared with Cr0.51N0.49. Further alloying of Mo, isoelectronic to Cr, increases the density of states at the Fermi level due to hybridization of the (Cr, V) 3d and Mo 4d-N 2p states in Cr(Mo,V)Nx. This hybridization and N off-stoichiometry result in more metal-like electrical resistivity and reduction in Seebeck coefficient. The N deficiency in Cr(Mo,V)Nx also depicts a critical role in reduction of the charge transfer from metal to N site compared with Cr0.51N0.49 and Cr0.50V0.03N0.47. In this paper, we envisage ways for enhancing thermoelectric properties through electronic band engineering by alloying and competing effects of N vacancies.

Thin-film Ni-Ca3Co4O9 and Ni-Mo thermocouples were prepared by stepwise magnetron-sputtering/annealing synthesis using masks. Compared with Ni-Mo thin film thermocouples, Ni-Ca3Co4O9 thin film thermocouples have higher output voltage due to large positive Seebeck voltage (153 mu V/K for single thermocouple and 912 mu V/ K for 6-series thermocouple). The maximum output voltage from the thermocouple is 70 mV was obtained for a hot-end temperature of 105 degrees C for Ni-Ca3Co4O9 for a 6-series thermocouple. The stability of Ca3Co4O9 films and the ability to make free-standing films, together with the high Seebeck coefficient, show that these thin-film oxides can be used as p-type leg in thermocouples, with implications for use in free-standing and flexible thermoelectric devices.

Motivated by frequently reported deviations from stoichiometry in cubic transition metal nitride (TMNx) thin films, the effect of N-vacancy concentration on the elastic properties of cubic TiNx, ZrNx, VNx, NbNx, and MoNx (0.72 & LE; x & LE; 1.00) is systematically studied by density functional theory (DFT) calculations. The predictions are validated experimentally for VNx (0.77 & LE; x & LE; 0.97). The DFT results indicate that the elastic behavior of the TMNx depends on both the N-vacancy concentration and the valence electron concentration (VEC) of the transition metal: While TiNx and ZrNx exhibit vacancy-induced reductions in elastic modulus, VNx and NbNx show an increase. These trends can be rationalized by considering vacancy-induced changes in elastic anisotropy and bonding. While introduction of N-vacancies in TiNx results in a significant reduction of elastic modulus along all directions and a lower average bond strength of Ti-N, the vacancy-induced reduction in [001] direction of VNx is overcompensated by the higher stiffness along [011] and [111] directions, resulting in a higher average bond strength of V-N. To validate the predicted vacancy-induced changes in elasticity experimentally, close-to-singlecrystal VNx (0.77 & LE; x & LE; 0.97) are grown on MgO(001) substrates. As the N-content is reduced, the relaxed lattice parameter a0, as probed by X-ray diffraction, decreases from 4.128 & ANGS; to 4.096 & ANGS;. This reduction in lattice parameter is accompanied by an anomalous 11% increase in elastic modulus, as determined by nanoindentation. As the experimental data agree with the predictions, the elasticity enhancement in VNx upon N-vacancy formation can be understood based on the concomitant changes in elastic anisotropy and bonding.

Corrosion resistance and catalytic activity toward the oxygen reduction reaction (ORR) in an alkaline environment are two key properties for water recombination applications. In this work, CoCrFexNi (0 <= x <= 0.7) thin films were deposited by magnetron sputtering on polished steel substrates. The native passive layer was 2-4 nm thick and coherent to the columnar grains determined by transmission electron microscopy. The effect of Fe on the corrosion properties in 0.1 M NaCl and 1 M KOH and the catalytic activity of the films toward ORR were investigated. Electrochemical impedance spectroscopy and potentiodynamic polarization measurements indicate that CoCrFe0.7Ni and CoCrFe0.3Ni have the highest corrosion resistance of the studied films in NaCl and KOH, respectively. The high corrosion resistance of the CoCrFe0.7Ni film in NaCl was attributed to the smaller overall grain size, which leads to a more homogeneous film with a stronger passive layer. For CoCrFe0.3Ni in KOH, it was attributed to a lower Fe dissolution into the electrolyte and the build-up of a thick and protective hydroxide layer. Scanning Kelvin probe force microscopy showed no potential differences globally in any of the films, but locally, a potential gradient between the top of the columns and grain boundaries was observed. Corrosion of the films was likely initiated at the top of the columns where the potential was lowest. It was concluded that Fe is essential for the electrochemical activation of the surfaces and the catalytic activity toward ORR in an alkaline medium. The highest catalytic activity was recorded for high Fe-content films (x >= 0.5) and was attributed to the formation of platelet-like oxide particles on the film surface upon anodization. The study showed that the combination of corrosion resistance and catalytic activity toward ORR is possible for CoCrFexNi, making this material system a suitable candidate for water recombination in an alkaline environment.

A variety of bulk high-entropy alloy superconductors have been recently discovered; however, for thin films, only the TaNbHfZrTi highentropy alloy system has been investigated for its superconducting properties. Here, (TiZrNbTa)_1-xW_x and (TiZrNbTa)_1-xV_x superconducting films have been produced by DC magnetron sputtering at different growth temperatures. The phase formation and superconducting behavior of these films depend on the content of alloying x and deposition temperature. A single body-centered cubic (bcc) phase can be formed in the low x range with enough driving energy for crystallinity, but phase transition between amorphous or two bcc structures is observed when increasing x. The highest superconducting transition temperature T_c reaches 8.0 K for the TiZrNbTa film. The superconducting transition temperature T_c of these films deposited at the same temperature decreases monotonically as a function of x. Increasing deposition temperature to 400 °C can enhance T_c for these films while retaining nearly equivalent compositions. Our experimental observations suggest that T_c of superconducting high entropy alloys relate to the atomic radii difference and electronegativity difference of involved elements beyond the valence electron number.

Controlling nanoporosity to favorably alter multiple properties in layered crystalline inorganic thin films is a challenge. Here, we demonstrate that the thermoelectric and mechanical properties of Ca3Co4O9 films can be engineered through nanoporosity control by annealing multiple Ca(OH)(2)/Co3O4 reactant bilayers with characteristic bilayer thicknesses (b(t)). Our results show that doubling b(t), e.g., from 12 to 26 nm, more than triples the average pore size from similar to 120 nm to similar to 400 nm and increases the pore fraction from 3% to 17.1%. The higher porosity film exhibits not only a 50% higher electrical conductivity of sigma similar to 90 S cm(-1) and a high Seebeck coefficient of alpha similar to 135 mu V K-1, but also a thermal conductivity as low as kappa similar to 0.87 W m(-1) K-1. The nanoporous Ca3Co4O9 films exhibit greater mechanical compliance and resilience to bending than the bulk. These results indicate that annealing reactant multilayers with controlled thicknesses is an attractive way to engineer nanoporosity and realize mechanically flexible oxide-based thermoelectric materials.

Mg3Sb2-based thermoelectric materials attract attention for applications near room temperature. Here, Mg-Bi films were synthesized using magnetron sputtering at deposition temperatures from room temperature to 400 & DEG;C. Single-phase Mg3Bi2 thin films were grown on c-plane-oriented sapphire and Si(100) substrates at a low deposition temperature of 200 & DEG;C. The Mg3Bi2 films grew epitaxially on c-sapphire and fiber-textured on Si(100). The orientation relationships for the Mg3Bi2 film with respect to the c-sapphire substrate are (0001) Mg3Bi2||(0001) Al2O3 and [11 2 over bar 0] Mg3Bi2||[11 2 over bar 0] Al2O3. The observed epitaxy is consistent with the relatively high work of separation, calculated by the density functional theory, of 6.92 J m(-2) for the Mg3Bi2 (0001)/Al2O3 (0001) interface. Mg3Bi2 films exhibited an in-plane electrical resistivity of 34 mu omega m and a Seebeck coefficient of +82.5 mu V K-1, yielding a thermoelectric power factor of 200 mu W m(-1) K-2 near room temperature.

CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3-y (002) films on a (112 over bar 0)-oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3-y shows growth with a small in-plane tilt of <approximate to 0.2 degrees toward the (200) plane of CaMnO3-y and the (1 over bar 104) with respect to the LaAlO3 (112 over bar 0) substrate. X-ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (112 over bar 0) substrate promotes tensile-strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along and , forming stacking faults.

Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature). These were identified as interstitial-type defect dusters and argon vacancy complexes. The insertion of these specific defects induces acceptor-type deep levels in the band gap, yielding a reduction in the free-carrier mobility. With a reduced electrical conductivity, the irradiated sample exhibited a higher Seebeck coefficient while maintaining the power factor of the film. The thermal conductivity is strongly reduced from 12 to 3 W.m(-1). K-1 at 300 K, showing the influence of defects in increasing phonon scattering. Subsequent high-temperature annealing at 1573 K leads to the progressive evolution of these defects: the initial dusters of interstitials evolved to the benefit of smaller dusters and the formation of bubbles. Thus, the number of free carriers, the resistivity, and the Seebeck coefficient are almost restored but the mobility of the carriers remains low and a 30% drop in thermal conductivity is still effective (k(total) similar to 8.5 Wm(-1).K-1). This study shows that control defect engineering with defects introduced by irradiation using noble gases in a thermoelectric coating can be an attractive method to enhance the figure of merit of thermoelectric materials.

Nanoporous Ca3Co4O9 exhibits high thermoelectric properties and low thermal conductivity and can be made mechanically flexible by nanostructural design. To improve the mechanical flexibility with retained thermoelectric properties near room temperature, however, it is desirable to incorporate an organic filler in this nanoporous inorganic matrix material. Here, double-layer nanoporous Ca3Co4O9/PEDOT:PSS thin films were synthesized by spin-coating PEDOT:PSS into the nanopores. The obtained hybrid films exhibit high Seebeck coefficient (~+130 mu V/K) and thermoelectric power factor (0.75 mu W cm(-1) K-2) at room temperature with no deterioration in electrical properties after cyclic bending tests (98% preservation of electrical conductivity after 1000 cycles bending to a bending radius of 3 mm). Compared with the nanoporous Ca3Co4O9 thin film, the mechanical flexibility of the hybrid film can be effectively improved after hybrid with PEDOT:PSS with only a slight decrease of the thermoelectric properties.

During direct current magnetron sputtering (dcMS) of thin films, the ion energy and flux are complex parameters that influence thin film growth and can be exploited to tailor their properties. The ion energy is generally controlled by the bias voltage applied at the substrate. The ion flux density however is controlled by more complex mechanisms. In this study, we look into magnetic-field-assisted dcMs, where a magnetic field applied in the deposition chamber by use of a solenoid coil at the substrate position, influences the energetic bombardment by Ar ions during deposition. Using this technique, CrFeCoNi multicomponent nitride thin films were grown on Si(100) substrates by varying the bias voltage and magnetic field systematically. Plasma diagnostics were performed by a Langmuir wire probe and a flat probe. On interpreting the data from the current-voltage curves it was confirmed that the ion flux at the substrate increased with increasing coil magnetic field with ion energies corresponding to the applied bias. The increased ion flux assisted by the magnetic field produced by the solenoid coil aids in the stabilization of NaCl B1 crystal structure without introducing Ar ion implantation.

We report the results of a combined experimental and theoretical study on nonstoichiometric CrN1+δ thinfilms grown by reactive magnetron sputtering on c-plane sapphire and MgO (100) substrates in an Ar/N2 gasmixture using different percentages of N2. There is a transition from n-type to p-type behavior in the layersas a function of nitrogen concentration varying from 48 to 52 at. % in CrN films. The compositional changefollows a similar trend for all substrates, with a N/Cr ratio increasing from approximately 0.7 to 1.06–1.11 byincreasing the percentage of N2 in the gas flow ratio. As a result of the change in stoichiometry, the latticeparameter and the Seebeck coefficient increase together with the increase of N in CrN1+δ ; in particular, theSeebeck value coefficient transitions from –50 μV K–1 for CrN0.97 to +75μV K–1 for CrN1.1. Density functionaltheory calculations show that Cr vacancies can account for the change in the Seebeck coefficient, since they pushthe Fermi level down in the valence band, whereas N interstitial defects in the form of N2 dumbbells are neededto explain the increasing lattice parameter. Calculations including both types of defects, which have a strongtendency to bind together, reveal a slight increase in the lattice parameter and a simultaneous formation of holesin the valence band. To explain the experimental trends, we argue that both Cr vacancies and N2 dumbbells,possibly in combined configurations, are present in the films. We demonstrate the possibility of controlling thesemiconducting behavior of CrN with intrinsic defects from n to p type, opening possibilities to integrate thiscompound in energy-harvesting thermoelectric devices.