In this work, we demonstrate the capability of the hot-wall metalorganic chemical vapor deposition to deliver high-quality n-AlxGa1−xN (x = 0 – 0.12, [Si] = 1×1017 cm⁻³) epitaxial layers on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13 – 0.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5×1015 cm⁻³ and carbon of 2×1016 cm⁻³. Edge type dislocations in the layers gradually increase with increasing Al content while screw dislocations only raise for x above 0.077. The room temperature electron mobility of the n-AlxGa1−xN remain in the range of 400 – 470 cm²/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties.

Compositionally graded channel AlGaN/GaN high electron mobility transistors (HEMTs) offer a promising route to improve device linearity, which is necessary for low-noise radio-frequency amplifiers. In this work, we demonstrate different grading profiles of a 10-nm-thick AlxGa1-xN channel from x = 0 to x = 0.1 using hot-wall metal-organic chemical vapor deposition (MOCVD). The growth process is developed by optimizing the channel grading and the channel-to-barrier transition. For this purpose, the Al-profiles and the interface sharpness, as determined from scanning transmission electron microscopy combined with energy-dispersive x-ray spectroscopy, are correlated with specific MOCVD process parameters. The results are linked to the channel properties (electron density, electron mobility, and sheet resistance) obtained by contactless Hall and terahertz optical Hall effect measurements coupled with simulations from solving self-consistently Poisson and Schrodinger equations. The impact of incorporating a thin AlN interlayer between the graded channel and the barrier layer on the HEMT properties is investigated and discussed. The optimized graded channel HEMT structure is found to have similarly high electron density (similar to 9 x 10(12) cm(-2)) as the non-graded conventional structure, though the mobility drops from similar to 2360 cm(2)/V s in the conventional to similar to 960 cm(2)/V s in the graded structure. The transconductance g(m) of the linearly graded channel HEMTs is shown to be flatter with smaller g(m) and g(m) as compared to the conventional non-graded channel HEMT implying improved device linearity. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Optical nanoantennas based on organic plasmonics are promising for their higher degree of tunability over metallic nanostructures. Here, nanodisks of polythiophene-based semiconducting polymers provide nanooptical antennas with resonances that are tunable over a 1000 nm wavelength range and can be switched off or on by doping modulation. Optical nanoantennas are often based on plasmonic resonances in metal nanostructures, but their dynamic tunability is limited due to the fixed permittivity of conventional metals. Recently, we introduced PEDOT-based conducting polymers as an alternative materials platform for dynamic plasmonics and metasurfaces. Here, we expand dynamic organic plasmonic systems to a wider class of doped polythiophene-based semiconducting polymers. We present nanodisks of PBTTT semiconducting polymer doped with a dicationic salt, enabling a high doping level of around 0.8 charges per monomer, and demonstrate that they can be used as nanooptical antennas via redox-tunable plasmonic resonances. The resonances arise from the polymer being optically metallic in its doped state and dielectric in its non-conducting undoped state. The plasmonic resonances are controllable over a 1000 nm wavelength range by changing the dimensions of the nanodisks. Furthermore, the optical response of the nanoantennas can be reversibly tuned by modulating the doping level of the polymer. Simulations corroborate the experimental results and reveal the possibility to also modulate the optical nearfield response of the nanoantennas.

Nanostructures of conventional metals offer manipulation of light at the nanoscale but are largely limited to static behavior due to fixed material properties. To develop the next frontier of dynamic nano-optics and metasurfaces, this study utilizes the redox-tunable optical properties of conducting polymers, as recently shown to be capable of sustaining plasmons in their most conducting oxidized state. Electrically tunable conducting polymer nano-optical antennas are presented, using nanodisks of poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf) as a model system. In addition to repeated on/off switching of the polymeric nanoantennas, the concept enables gradual electrical tuning of the nano-optical response, which was found to be related to the modulation of both density and mobility of the mobile polaronic charge carriers in the polymer. The resonance position of the PEDOT:Sulf nanoantennas can be conveniently controlled by disk size, here reported down to a wavelength of around 1270 nm. The presented concept may be used for electrically tunable metasurfaces, with tunable farfield as well as nearfield. The work thereby opens for applications ranging from tunable flat meta-optics to adaptable smart windows.

We report on the free charge carrier properties of a two-dimensional electron gas (2DEG) in an AlN/AlxGa1-xN high electron mobility transistor structure with a high aluminum content (x = 0.78). The 2DEG sheet density N s = ( 7.3 +/- 0.7 ) x 10 12 cm(-2), sheet mobility mu s = ( 270 +/- 40 ) cm(2)/(Vs), sheet resistance R- s = ( 3200 +/- 500 ) omega/ ?, and effective mass m( eff) = ( 0.63 +/- 0.04 ) m( 0) at low temperatures ( T = 5 K ) are determined by terahertz (THz) optical Hall effect measurements. The experimental 2DEG mobility in the channel is found within the expected range, and the sheet carrier density is in good agreement with self-consistent Poisson-Schrodinger calculations. However, a significant increase in the effective mass of 2DEG electrons at low temperatures is found in comparison with the respective value in bulk Al0.78Ga22N ( m( eff) = 0.334 m( 0)). Possible mechanisms for the enhanced 2DEG effective mass parameter are discussed and quantified using self-consistent Poisson-Schrodinger calculations .Published under an exclusive license by AIP Publishing.

Herein, metal-organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] approximate to 2 x 10(19) cm(-3) is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p approximate to 2 x 10(17) cm(-3) in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated Mg-Ga acceptor.

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range ( 2.45 x 10( 18) cm(-3) up to 1.10 x 10(20) cm(-3)) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 omega cm and 8.4 x 10( 17) cm(-3), respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures. (C)2022 Author(s).

We report on terahertz (THz) electron paramagnetic resonance generalized spectroscopic ellipsometry (THz-EPR-GSE). Measurements of field and frequency dependencies of magnetic response due to spin transitions associated with nitrogen defects in 4H-SiC are shown as an example. THz-EPR-GSE dispenses with the need of a cavity, permits independently scanning field and frequency parameters, and does not require field or frequency modulation. We investigate spin transitions of hexagonal (h) and cubic (k) coordinated nitrogen including coupling with its nuclear spin (I = 1), and we propose a model approach for the magnetic susceptibility to account for the spin transitions. From the THz-EPR-GSE measurements, we can fully determine polarization properties of the spin transitions, and we can obtain the k coordinated nitrogen g and hyperfine splitting parameters using magnetic field and frequency dependent Lorentzian oscillator line shape functions. Magnetic-field line broadening presently obscures access to h parameters. We show that measurements of THz-EPR-GSE at positive and negative fields differ fundamentally and hence provide additional information. We propose frequency-scanning THz-EPR-GSE as a versatile method to study properties of spins in solid state materials.

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H-SiC. We show that by introducing Ar at higher temperatures, T-A(r), one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TA r is proposed and discussed. Increased T-A(r) is also shown to reduce the sp(3) hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which T-A(r) plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different T-A(r) and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 degrees C, and which is found to be independent of T-A(r). Higher T-A(r) leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. T-A(r) is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

We present optical and near-infrared (NIR, Y-, J-, H-band) observations of 42 Type Ia supernovae (SNe Ia) discovered by the untargeted intermediate Palomar Transient Factory survey. This new data set covers a broad range of redshifts and host galaxy stellar masses, compared to previous SN Ia efforts in the NIR. We construct a sample, using also literature data at optical and NIR wavelengths, to examine claimed correlations between the host stellar masses and the Hubble diagram residuals. The SN magnitudes are corrected for host galaxy extinction using either a global total-to-selective extinction ratio, R-V = 2.0, for all SNe, or a best-fit R-V for each SN individually. Unlike previous studies that were based on a narrower range in host stellar mass, we do not find evidence for a "mass step," between the color- and stretch-corrected peak J and H magnitudes for galaxies below and above log(M-*/M-circle dot) = 10. However, the mass step remains significant (3 sigma) at optical wavelengths (g, r, i) when using a global R-V, but vanishes when each SN is corrected using their individual best-fit R-V. Our study confirms the benefits of the NIR SN Ia distance estimates, as these are largely exempted from the empirical corrections dominating the systematic uncertainties in the optical.

In this work, we demonstrate the application of terahertz-optical Hall effect (THz-OHE) to determine directionally dependent free charge carrier properties of ambient-doped monolayer and quasi-freestanding-bilayer epitaxial graphene on 4H-SiC(0001). Directionally independent free hole mobility parameters are found for the monolayer graphene. In contrast, anisotropic hole mobility parameters with a lower mobility in direction perpendicular to the SiC surface steps and higher along the steps in quasifree-standing-bilayer graphene are determined for the first time. A combination of THz-OHE, nanoscale microscopy and optical spectroscopy techniques are used to investigate the origin of the anisotropy. Different defect densities and different number of graphene layers on the step edges and terraces are ruled out as possible causes. Scattering mechanisms related to doping variations at the step edges and terraces as a result of different interaction with the substrate and environment are discussed and also excluded. It is suggested that the step edges introduce intrinsic scattering in quasi-free-standing-bilayer graphene, that is manifested as a result of the higher ratio between mean free path and average terrace width parameters. The suggested scenario allows to reconcile existing differences in the literature regarding the anisotropic electrical transport in epitaxial graphene. (C) 2020 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license.

Precise manipulation of light-matter interactions has enabled a wide variety of approaches to create bright and vivid structural colors. Techniques utilizing photonic crystals, Fabry-Perot cavities, plasmonics, or high-refractive-index dielectric metasurfaces have been studied for applications ranging from optical coatings to reflective displays. However, complicated fabrication procedures for sub-wavelength nanostructures, limited active areas, and inherent absence of tunability of these approaches impede their further development toward flexible, large-scale, and switchable devices compatible with facile and cost-effective production. Here, a novel method is presented to generate structural color images based on monochromic conducting polymer films prepared on metallic surfaces via vapor phase polymerization and ultraviolet (UV) light patterning. Varying the UV dose enables synergistic control of both nanoscale film thickness and polymer permittivity, which generates controllable structural colors from violet to red. Together with grayscale photomasks this enables facile fabrication of high-resolution structural color images. Dynamic tuning of colored surfaces and images via electrochemical modulation of the polymer redox state is further demonstrated. The simple structure, facile fabrication, wide color gamut, and dynamic color tuning make this concept competitive for applications like multifunctional displays.

Being able to dynamically shape light at the nanoscale is oneof the ultimate goals in nano-optics1. Resonant light–matterinteraction can be achieved using conventional plasmonicsbased on metal nanostructures, but their tunability is highlylimited due to a fixed permittivity2. Materials with switchablestates and methods for dynamic control of light–matterinteraction at the nanoscale are therefore desired. Here weshow that nanodisks of a conductive polymer can supportlocalized surface plasmon resonances in the near-infraredand function as dynamic nano-optical antennas, with their resonancebehaviour tunable by chemical redox reactions. Theseplasmons originate from the mobile polaronic charge carriersof a poly(3,4-ethylenedioxythiophene:sulfate) (PEDOT:Sulf)polymer network. We demonstrate complete and reversibleswitching of the optical response of the nanoantennasby chemical tuning of their redox state, which modulatesthe material permittivity between plasmonic and dielectricregimes via non-volatile changes in the mobile chargecarrier density. Further research may study different conductivepolymers and nanostructures and explore their usein various applications, such as dynamic meta-optics andreflective displays.

Ellagic acid (EA), an antioxidant from fruits or other plants, has recently evoked interest in the field of organic electronics because of its weak electron donor properties. In this work, the preparation of uniaxial pi-stacked EA films by thermal evaporation on different surfaces is reported for the first time. The (102) lattice plane of the pi-electron system was confirmed as the contact plane for one monolayer equivalent on Ag(111) by low-electron energy diffraction. X-ray and atomic force microscopy measurements revealed nanocrystalline grains with an average inplane size of 50 nm and considerably smaller average out-of-plane crystallite sizes (16-25 nm) in films of 16-75 nm thickness. The influence of different substrates was minor compared to the effect of the film thickness. An increase in the in-plane density of grains at larger film thicknesses was deduced from the trend in their uniaxial optical properties. Weak and strong intermolecular H-bonding interactions were identified in the EA crystal lattice, while a surplus of weak H-bonding was observed for the nanocrystallites in thin films, as compared to bulk EA. Finally, EA was coevaporated with the semiconducting thiophene molecule DCV4T-Et-2 to demonstrate principle interactions with a guest molecule by H-bonding analysis. Our results illustrate the feasibility of applying EA films as alignment layers for templating other semiconducting organic films used in organic electronic devices.

We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sublimation on C-face 4H-SiC. The mid-infrared optical Hall effect technique is used to determine the magnetic field dependence of the inter-Landau level transition energies and their optical polarization selection rules, which unambiguously show that the multilayer graphene consists of electronically decoupled layers. Transmission electron microscopy reveals no out-of-plane rotational disorder between layers in the stack, which is in contrast to what is typically observed for C-face graphene grown by low temperature sublimation. It is found that the multilayer graphene maintains AB-stacking order with increased interlayer spacing by 2.4%-8.4% as compared to highly oriented pyrolytic graphite. Electron energy loss spectroscopy mapping reveals Si atoms trapped in between layers, which are proposed to be the cause for the observed increased interlayer spacing leading to layer decoupling. Based on our results, we propose a defect-driven growth evolution mechanism for multilayer graphene on C-face SiC via high temperature sublimation.

Electrically conducting polymers (ECPs) are becoming increasingly important in areas such as optoelectronics, biomedical devices, and energy systems. Still, their detailed charge transport properties produce an anomalous optical conductivity dispersion that is not yet fully understood in terms of physical model equations for the broad range optical response. Several modifications to the classical Drude model have been proposed to account for a strong non-Drude behavior from terahertz (THz) to infrared (IR) ranges, typically by implementing negative amplitude oscillator functions to the model dielectric function that effectively reduce the conductivity in those ranges. Here we present an alternative description that modifies the Drude model via addition of positive-amplitude Lorentz oscillator functions. We evaluate this so-called Drude-Lorentz (DL) model based on the first ultra-wide spectral range ellipsometry study of ECPs, spanning over four orders of magnitude: from 0.41 meV in the THz range to 5.90 eV in the ultraviolet range, using thin films of poly(3,4-ethylenedioxythiophene): tosylate (PEDOT: Tos) as a model system. The model could accurately fit the experimental data in the whole ultrawide spectral range and provide the complex anisotropic optical conductivity of the material. Examining the resonance frequencies and widths of the Lorentz oscillators reveals that both spectrally narrow vibrational resonances and broader resonances due to localization processes contribute significantly to the deviation from the Drude optical conductivity dispersion. As verified by independent electrical measurements, the DL model accurately determines the electrical properties of the thin film, including DC conductivity, charge density, and (anisotropic) mobility. The ellipsometric method combined with the DL model may thereby become an effective and reliable tool in determining both optical and electrical properties of ECPs, indicating its future potential as a contact-free alternative to traditional electrical characterization.

We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that suppresses formation of standing waves by use of stealth technology approaches. The strategy to suppress standing waves consists of three elements geometry, coating, and modulation. The instrument is based on the rotating analyzer ellipsometer principle and can incorporate various sample compartments, such as a superconducting magnet, in situ gas cells, or resonant sample cavities, for example. A backward wave oscillator and three detectors are employed, which permit operation in the spectral range of 0.1–1 THz (3.3–33 cm−1 or 0.4–4 meV). The THz frequency-domain ellipsometer allows for standard and generalized ellipsometry at variable angles of incidence in both reflection and transmission configurations. The methods used to suppress standing waves and strategies for an accurate frequency calibration are presented. Experimental results from dielectric constant determination in anisotropic materials, and free charge carrier determination in optical Hall effect (OHE), resonant-cavity enhanced OHE, and in situ OHE experiments are discussed. Examples include silicon and sapphire optical constants, free charge carrier properties of two-dimensional electron gas in a group III nitride high electron mobility transistor structure, and ambient effects on free electron mobility and density in epitaxial graphene.

Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m(perpendicular to)* = (0.205 +/- 0.013) m(0) and m(parallel to)* = (0.204 +/- 0.016) m(0) for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 +/- 0.2) x 10(19) cm(-3). Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation. Published by AIP Publishing.

We present the PMAS/PPak Integral-field Supernova hosts COmpilation (PISCO), which comprises integral field spectroscopy (IFS) of 232 supernova (SN) host galaxies that hosted 272 SNe, observed over several semesters with the 3.5 m telescope at the Calar Alto Observatory (CAHA). PISCO is the largest collection of SN host galaxies observed with wide-field IFS, totaling 466,347 individual spectra covering a typical spatial resolution of similar to 380 pc. Focused studies regarding specific SN Ia-related topics will be published elsewhere; this paper aims to present the properties of the SN environments, using stellar population (SP) synthesis, and the gas-phase interstellar medium, providing additional results separating stripped-envelope SNe into their subtypes. With 11,270 H ii regions detected in all galaxies, we present for the first time a statistical analysis of H ii regions, which puts H ii regions that have hosted SNe in context with all other star-forming clumps within their galaxies. SNe Ic are associated with environments that are more metal-rich and have higher EW(H alpha) and higher star formation rate within their host galaxies than the mean of all H ii regions detected within each host. This in contrast to SNe IIb, which occur in environments that are very different compared to other core-collapse SNe types. We find two clear components of young and old SPs at SNe IIn locations. We find that SNe II fast decliners tend to explode at locations where the Sigma(SFR) is more intense. Finally, we outline how a future dedicated IFS survey of galaxies in parallel to an untargeted SN search would overcome the biases in current environmental studies.

Context. Type Ia Supernovae (SNe Ia) have been used as standardizable candles in the optical wavelengths to measure distances with an accuracy of similar to 7% out to redshift z similar to 1 : 5. There is evidence that in the near-infrared (NIR) wavelengths SNe Ia are even better standard candles, however, NIR observations are much more time-consuming. Aims. We aim to test whether the NIR peak magnitudes could be accurately estimated with only a single observation obtained close to maximum light, provided that the time of B band maximum, the B - V color at maximum and the optical stretch parameter are known. Methods. We present multi-epoch UBVRI and single-epoch J and H photometric observations of 16 SNe Ia in the redshift range z = 0 : 037 0 : 183, doubling the leverage of the current SN Ia NIR Hubble diagram and the number of SNe beyond redshift 0.04. This sample was analyzed together with 102 NIR and 458 optical light curves (LCs) of normal SNe Ia from the literature. Results. The analysis of 45 NIR LCs with well-sampled first maximum shows that a single template accurately describes the LCs if its time axis is stretched with the optical stretch parameter. This allows us to estimate the peak NIR magnitudes of SNe with only few observations obtained within ten days from B-band maximum. The NIR Hubble residuals show weak correlation with Delta M-15 and the color excess E(B V), and for the first time we report a potential dependence on the J(max) - H-max color. With these corrections, the intrinsic NIR luminosity scatter of SNe Ia is estimated to be similar to 0.10 mag, which is smaller than what can be derived for a similarly heterogeneous sample at optical wavelengths. Analysis of both NIR and optical data shows that the dust extinction in the host galaxies corresponds to a low R-V similar or equal to 1.8-1.9. Conclusions. We conclude that SNe Ia are at least as good standard candles in the NIR as in the optical and are potentially less affected by systematic uncertainties. We extended the NIR SN Ia Hubble diagram to its nonlinear part at z similar to 0 : 2 and confirmed that it is feasible to accomplish this result with very modest sampling of the NIR LCs, if complemented by well-sampled optical LCs. With future facilities it will be possible to extend the NIR Hubble diagram beyond redshift z similar or equal to 1; and our results suggest that the most efficient way to achieve this would be to obtain a single observation close to the NIR maximum.

Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmￜￜￜ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmￜￜￜ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.

Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.

In this work, we report a multi-scale investigation using several nano-, micro and macro-scale techniques of few layer graphene (FLG) sample consisting of large monolayer (ML) and bilayer (BL) areas grown on C-face 4H-SiC (000-1) by high-temperature sublimation. Single 1 x 1 diffraction patterns are observed by micro-low-energy electron diffraction for ML, BL and trilayer graphene with no indication of out-of-plane rotational disorder. A SiOx layer is identified between graphene and SiC by X-ray photoelectron emission spectroscopy and reflectance measurements. The chemical composition of the interface layer changes towards SiO2 and its thickness increases with aging in normal ambient conditions. The formation mechanism of the interface layer is discussed. It is shown by torsion resonance conductive atomic force microscopy that the interface layer causes the formation of non-ideal Schottky contact between ML graphene and SiC. This is attributed to the presence of a large density of interface states. Mid-infrared optical Hall effect measurements revealed Landau-level transitions in FLG that have a square-root dependence on magnetic field, which evidences a stack of decoupled graphene sheets. Contrary to previous works on decoupled C-face graphene, our BL and FLG are composed of ordered decoupled graphene layers without out-of-plane rotation. (C) 2017 Elsevier Ltd. All rights reserved.

We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier density below 2.5 x 10(11) cm(-2). Low-energy electron diffraction mu-LEED) reveals the presence of azimuthally rotated graphene domains with a typical size of amp;lt;= 200 nm.mu-LEED mapping suggests that the azimuth rotation occurs between adjacent domains within the same sheet rather than vertically in the stack. Published by AIP Publishing.

Aims. We present a ground-based, near-infrared search for lensed supernovae behind the massive cluster Abell 1689 at z = 0.18, which is one of the most powerful gravitational telescopes that nature provides. Methods. Our survey was based on multi-epoch J-band observations with the HAWK-I instrument on VLT, with supporting optical data from the Nordic Optical Telescope. Results. Our search resulted in the discovery of five photometrically classified, core-collapse supernovae with high redshifts of 0.671 amp;lt; z amp;lt; 1.703 and magnifications in the range Delta m = -0.31 to -1.58 mag, as calculated from lensing models in the literature. Owing to the power of the lensing cluster, the survey had the sensitivity to detect supernovae up to very high redshifts, z similar to 3, albeit for a limited region of space. We present a study of the core-collapse supernova rates for 0.4 amp;lt; z amp;lt; 2.9, and find good agreement with previous estimates and predictions from star formation history. During our survey, we also discovered two Type Ia supernovae in A 1689 cluster members, which allowed us to determine the cluster Ia rate to be 0.14(-0.09)(+0.19) SNuB h(2) (SNuB 10(-12) SNe L-circle dot,B(-1) yr(-1)), where the error bars indicate 1 sigma confidence intervals, statistical and systematic, respectively. The cluster rate normalized by the stellar mass is 0.10(-0.06)(+0.13) +/- 0.02 in SNuM h(2) (SNuM = 10(-12) SNe M-1 yr(-1)). Furthermore, we explore the optimal future survey for improving the core-collapse supernova rate measurements at z greater than or similar to 2 using gravitational telescopes, and for detections with multiply lensed images, and we find that the planned WFIRST space mission has excellent prospects. Conclusions. Massive clusters can be used as gravitational telescopes to significantly expand the survey range of supernova searches, with important implications for the study of the high-z transient Universe.

We measured the gas abundance profiles in a sample of 122 face-on spiral galaxies observed by the CALIFA survey and included all spaxels whose line emission was consistent with star formation. This type of analysis allowed us to improve the statistics with respect to previous studies, and to properly estimate the oxygen distribution across the entire disc to a distance of up to 3 4 disc effective radii (r(e)). We confirm the results obtained from classical H II region analysis. In addition to the general negative gradient, an outer flattening can be observed in the oxygen abundance radial profile. An inner drop is also found in some cases. There is a common abundance gradient between 0.5 and 2.0 r(e) of alpha(O/H) = -0.075 dex/r(e) with a scatter of sigma = 0.016 dex/r(e) when normalising the distances to the disc effective radius. By performing a set of Kolmogorov-Smirnov tests, we determined that this slope is independent of other galaxy properties, such as morphology, absolute magnitude, and the presence or absence of bars. In particular, barred galaxies do not seem to display shallower gradients, as predicted by numerical simulations. Interestingly, we find that most of the galaxies in the sample with reliable oxygen abundance values beyond similar to 2 effective radii (57 galaxies) present a flattening of the abundance gradient in these outer regions. This flattening is not associated with any morphological feature, which suggests that it is a common property of disc galaxies. Finally, we detect a drop or truncation of the abundance in the inner regions of 27 galaxies in the sample; this is only visible for the most massive galaxies.

This paper describes the Second Public Data Release (DR2) of the Calar Alto Legacy Integral Field Area (CALIFA) survey. The data for 200 objects are made public, including the 100 galaxies of the First Public Data Release (DR1). Data were obtained with the integral-field spectrograph PMAS /PPak mounted on the 3.5 m telescope at the Calar Alto observatory. Two different spectral setups are available for each galaxy, (i) a low-resolution V500 setup covering the wavelength range 3745-7500 angstrom with a spectral resolution of 6.0 angstrom (FWHM); and (ii) a medium-resolution V1200 setup covering the wavelength range 3650-4840 angstrom with a spectral resolution of 2.3 angstrom (FWHM). The sample covers a redshift range between 0.005 and 0.03, with a wide range of properties in the color-magnitude diagram, stellar mass, ionization conditions, and morphological types. All the cubes in the data release were reduced with the latest pipeline, which includes improved spectrophotometric calibration, spatial registration, and spatial resolution. The spectrophotometric calibration is better than 6% and the median spatial resolution is 2 4. In total, the second data release contains over 1.5 million spectra.

We develop and discuss appropriate methods based on x-ray diffraction and generalized infrared spectroscopic ellipsometry to identify wurtizte and zinc-blende polymorphs, and quantify their volume fractions in mixed-phase epitaxial films taking InN as an example. The spectral signatures occurring in the azimuth polarization (Muller matrix) maps of mixed-phase epitaxial InN films are discussed and explained in view of polymorphism (zinc-blende versus wurtzite), volume fraction of different polymorphs and their crystallographic orientation, and azimuth angle. A comprehensive study of the structural, phonon and free electron properties of zinc-blende InN films containing inclusions of wurtzite InN is also presented. Thorough analysis on the formation of the zinc-blende and wurtzite phases is given and the structural evolution with film thickness is discussed in detail. The phonon properties of the two phases are determined and discussed together with the determination of the bulk free-charge carrier concentration, and electron accumulation at the mixed-phase InN film surfaces.

Precise manipulation of light-matter interaction has enabled a wide variety of approaches to create bright and vivid structural colours. Techniques utilizing photonic crystals, Fabry-Pérot cavities, plasmonics, or high-refractive index dielectric metasurfaces have been studied for applications ranging from optical coatings to reflective displays. However, complicated fabrication procedures for sub-wavelength nanostructures, limited active areas, and inherent absence of tunability of these approaches significantly impede their further development towards flexible, large-scale, and switchable devices compatible with facile and cost-effective production. Herein, we present a simple and efficient method to generate structural colours based on nanoscale conducting polymer films prepared on metallic surfaces via vapour phase polymerization and ultraviolet (UV) light patterning. Varying the UV dose enables synergistic control of both nanoscale film thickness and polymer permittivity, which generates controllable colours from violet to red. Together with greyscale photomasks this enables fabrication of high-resolution colour images using single exposure steps. We further demonstrate spatiotemporal tuning of the structurally coloured surfaces and images via electrochemical modulation of the polymer redox state. The simple structure, facile fabrication, wide colour gamut, and dynamic colour tuning make this concept competitive for future multi-functional and smart displays.