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  • 1.
    Li, Youbing
    et al.
    Chinese Acad Sci, Peoples R China; Univ Chinese Acad Sci, Peoples R China.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Li, Mian
    Chinese Acad Sci, Peoples R China.
    Chang, Keke
    Chinese Acad Sci, Peoples R China.
    Zha, Xianhu
    Chinese Acad Sci, Peoples R China; Peng Cheng Lab, Peoples R China.
    Zhang, Yiming
    Chinese Acad Sci, Peoples R China.
    Chen, Ke
    Chinese Acad Sci, Peoples R China.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Du, Shiyu
    Chinese Acad Sci, Peoples R China.
    Francisco, Joseph S.
    Univ Penn, PA 19104 USA.
    Chai, Zhifang
    Chinese Acad Sci, Peoples R China.
    Huang, Zhengren
    Chinese Acad Sci, Peoples R China.
    Huang, Qing
    Chinese Acad Sci, Peoples R China.
    Multielemental single atom-thick A layers in nanolaminated V2(Sn, A) C (A = Fe, Co, Ni, Mn) for tailoring magnetic properties2020Ingår i: Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, E-ISSN 1091-6490, Vol. 117, nr 2, s. 820-825Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report 15 inherently nanolaminated V-2(A(x)Sn(1-x))C (A = Fe, Co, Ni, Mn, and combinations thereof, with x similar to 1/3) MAX phases synthesized by an alloy-guided reaction. The simultaneous occupancy of the 4 magnetic elements and Sn in the individual single-atom-thick A layers constitutes high-entropy MAX phase in which multielemental alloying exclusively occurs in the 2 -dimensional (2D) A layers. V-2(A(x)Sn(1-x))C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. Density functional theory and phase diagram calculations are performed to understand the structure stability of these MAX phases. This 2D multielemental alloying approach provides a structural design route to discover nanolaminated materials and expand their chemical and physical properties. In fact, the magnetic behavior of these multielemental MAX phases shows strong dependency on the combination of various elements.

  • 2.
    Petruhins, Andrejs
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Dahlqvist, Martin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Theoretical Prediction and Experimental Verification of the Chemically Ordered Atomic-Laminate i-MAX Phases (Cr2/3Sc1/3)(2)GaC and (Mn2/3Sc1/3)(2)GaC2020Ingår i: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 20, nr 1, s. 55-61Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We combine predictive ab initio calculations with experimental verification of bulk materials synthesis for exploration of new and potentially magnetic atomically laminated i-MAX phases. Two such phases are discovered: (Cr2/3Sc1/3)(2)GaC and (Mn2/3Sc1/3)(2)GaC synthesized by the solid state reaction from elemental constituents. The latter compound displays a 2-fold increase in Mn content compared to previously reported bulk MAX phases. Both new compounds exhibit the characteristic in-plane chemical order of Cr(Mn) and Sc, and crystallize in an orthorhombic structure, space group Cmcm, as confirmed by scanning transmission electron microscopy. From density functional theory calculations of the magnetic ground state, including the electron-interaction parameter U, we suggest an antiferromagnetic ground state, close to degenerate with the ferromagnetic state.

  • 3.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    X-ray photoelectron spectroscopy: Towards reliable binding energy referencing2020Ingår i: Progress in Materials Science, ISSN 0079-6425, E-ISSN 1873-2208, Vol. 107, artikel-id 100591Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    With more than 9000 papers published annually, X-ray photoelectron spectroscopy (XPS) is an indispensable technique in modem surface and materials science for the determination of chemical bonding. The accuracy of chemical-state determination relies, however, on a trustworthy calibration of the binding energy (BE) scale, which is a nontrivial task due to the lack of an internal BE reference. One approach, proposed in the early days of XPS, employs the C 1s spectra of an adventitious carbon layer, which is present on all surfaces exposed to air. Despite accumulating criticism, pointing to the unknown origin and composition of the adventitious carbon, this is by far the most commonly used method today for all types of samples, not necessarily electrically insulating. Alarmingly, as revealed by our survey of recent XPS literature, the calibration procedure based on the C 1s peak of adventitious carbon is highly arbitrary, which results in incorrect spectral interpretation, contradictory results, and generates a large spread in reported BE values for elements even present in the same chemical state. The purpose of this review is to critically evaluate the status quo of XPS with a historical perspective, provide the techniques operating principles, resolve myths associated with C 1s referencing, and offer a comprehensive account of recent findings. Owing to the huge volume of XPS literature produced each year, the consequences of improper referencing are dramatic. Our intention is to promote awareness within a growing XPS community as to the problems reported over the last six decades and present a guide with best practice for using the C 1s BE referencing method.

  • 4.
    Kindlund, H.
    et al.
    Univ Calif Los Angeles, CA 90095 USA.
    Sangiovanni, Davide
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr Univ Bochum, Germany.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    A review of the intrinsic ductility and toughness of hard transition-metal nitride alloy thin films2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, artikel-id 137479Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    Over the past decades, enormous effort has been dedicated to enhancing the hardness of refractory ceramic materials. Typically, however, an increase in hardness is accompanied by an increase in brittleness, which can result in intergranular decohesion when materials are exposed to high stresses. In order to avoid brittle failure, in addition to providing high strength, films should also be ductile, i.e., tough. However, fundamental progress in obtaining hard-yet-ductile ceramics has been slow since most toughening approaches are based on empirical trial-and-error methods focusing on increasing the strength and ductility extrinsically, with a limited focus on understanding thin-film toughness as an inherent physical property of the material. Thus, electronic structure investigations focusing on the origins of ductility vs. brittleness are essential in understanding the physics behind obtaining both high strength and high plastic strain in ceramics films. Here, we review recent progress in experimental validation of density functional theory predictions on toughness enhancement in hard ceramic films, by increasing the valence electron concentration, using examples from the V1-xWxN and V1-xMoxN alloy systems.

    Publikationen är tillgänglig i fulltext från 2021-08-19 11:51
  • 5.
    Anasori, Babak
    et al.
    Drexel Univ, PA 19104 USA; Drexel Univ, PA 19104 USA.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rivin, Oleg
    Nucl Res Ctr Negev, Israel.
    Dahlqvist, Martin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Halim, Joseph
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Voigt, Cooper
    Drexel Univ, PA 19104 USA.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Barsoum, Michel W.
    Drexel Univ, PA 19104 USA.
    Caspi, Elad N.
    Drexel Univ, PA 19104 USA; Nucl Res Ctr Negev, Israel.
    A Tungsten-Based Nanolaminated Ternary Carbide: (W,Ti)(4)C4-x2019Ingår i: Inorganic Chemistry, ISSN 0020-1669, E-ISSN 1520-510X, Vol. 58, nr 2, s. 1100-1106Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Nanolamellar transition metal carbides are gaining increasing interests because of the recent developments of their twodimensional (2D) derivatives and promising performance for a variety of applications from energy storage, catalysis to transparent conductive coatings, and medicine. To develop more novel 2D materials, new nanolaminated structures are needed. Here we report on a tungsten based nanolaminated ternary phase, (W,Ti)(4)C4-x, synthesized by an Al catalyzed reaction of W, Ti, and C powders at 1600 degrees C for 4 h, under flowing argon. X-ray and neutron diffraction, along with Z-contrast scanning transmission electron microscopy, were used to determine the atomic structure, ordering, and occupancies. This phase has a layered hexagonal structure (P6(3)/mmc) with lattice parameters, a = 3.00880(7) angstrom, and c = 19.5633(6) angstrom and a nominal chemistry of (W,Ti)(4)C4-x (actual chemistry, W2.1(1)Ti1.6(1)C2.6(1)). The structure is comprised of layers of pure W that are also twin planes with two adjacent atomic layers of mixed W and Ti, on either side. The use of Al as a catalyst for synthesizing otherwise difficult to make phases, could in turn lead to the discovery of a large family of nonstoichiometric ternary transition metal carbides, synthesized at relatively low temperatures and shorter times.

  • 6.
    Engberg, David L. J.
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Tengdelius, Lina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Thuvander, Mattias
    Department of Physics, Chalmers University of Technology, Göteborg, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Atom probe tomography field evaporation characteristics and compositional corrections of ZrB22019Ingår i: Materials Characterization, ISSN 1044-5803, E-ISSN 1873-4189, Vol. 156, artikel-id 109871Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The microstructure of stoichiometric ZrB2.0 and B over-stoichiometric ZrB2.5 thin films has been studied using atom probe tomography (APT), X-ray diffraction, and transmission electron microscopy. Both films consist of columnar ZrB2 grains with AlB2-type crystal structure. The narrow stoichiometry range of ZrB2 results in the presence of separate disordered B-rich boundaries even in ZrB2.0. At higher average B content, specifically ZrB2.5, the formation of a continuous network around the sides of the ZrB2 columns is promoted. In addition, the APT field evaporation characteristics of ZrB2 and its influence on the measured local composition has been studied and compared to the average composition from elastic recoil detection analysis (ERDA). Differences in the measured average compositions of the two techniques are explained by the APT detector dead-time/space. A new pile-up pairs correction procedure based on co-evaporation correlation data was thus employed here for the APT data and compared with the 10B-method (the B equivalence of the 13C-method), as well as the combination of both methods. In ZrB2.0, all of the applied compositional correction methods were found to reduce the compositional difference when appropriate isotopic abundances were used. In ZrB2.5, the inhomogeneity of the film likely increased the local APT composition to such an extent that even conservative correction procedures overestimated the B content compared to the ERDA reference. The strengths of the pile-up pairs correction compared the 10B and the combined methods are higher precision, due to it being less dependent on the accuracy of estimated isotopic abundances, and that the correction itself is not dependent on careful background correction of the mass spectrum.

    Publikationen är tillgänglig i fulltext från 2021-08-10 08:00
  • 7.
    Tao, Quanzheng
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Dahlqvist, Martin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mockuté, Aurelija
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Oak Ridge Natl Lab, TN 37831 USA.
    Calder, Stuart
    Oak Ridge Natl Lab, TN 37831 USA.
    Petruhins, Andrejs
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Meshkian, Rahele
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rivin, Oleg
    Nucl Res Ctr Negev, Israel; Helmholtz Zentrum Berlin Mat and Energie, Germany.
    Potashnikov, Daniel
    Technion Israeli Inst Technol, Israel; Israel Atom Energy Commiss, Israel.
    Caspi, Elad N.
    Nucl Res Ctr Negev, Israel.
    Shaked, Hagai
    Ben Gurion Univ Negev, Israel.
    Hoser, Andreas
    Helmholtz Zentrum Berlin Mat and Energie, Germany.
    Opagiste, Christine
    Univ Grenoble Alpes, France.
    Galera, Rose-Marie
    Univ Grenoble Alpes, France.
    Salikhov, Ruslan
    Univ Duisburg Essen, Germany; Univ Duisburg Essen, Germany.
    Wiedwald, Ulf
    Univ Duisburg Essen, Germany; Univ Duisburg Essen, Germany.
    Ritter, Clemens
    Inst Laue Langevin, France.
    Wildes, Andrew R.
    Inst Laue Langevin, France.
    Johansson, Boerje
    Uppsala Univ, Sweden; Humboldt Univ, Germany.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Fade, Michael
    Univ Duisburg Essen, Germany; Univ Duisburg Essen, Germany.
    Barsoum, Michel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Drexel Univ, PA 19104 USA.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Atomically Layered and Ordered Rare-Earth i-MAX Phases: A New Class of Magnetic Quaternary Compounds2019Ingår i: Chemistry of Materials, ISSN 0897-4756, E-ISSN 1520-5002, Vol. 31, nr 7, s. 2476-2485Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In 2017, we discovered quaternary i-MAX phases atomically layered solids, where M is an early transition metal, A is an A group element, and X is C-with a ((M2/3M1/32)-M-1)(2)AC chemistry, where the M-1 and M-2 atoms are in-plane ordered. Herein, we report the discovery of a class of magnetic i-MAX phases in which bilayers of a quasi-2D magnetic frustrated triangular lattice overlay a Mo honeycomb arrangement and an Al Kagome lattice. The chemistry of this family is (Mo2/3RE1/3)(2)AlC, and the rare-earth, RE, elements are Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu. The magnetic properties were characterized and found to display a plethora of ground states, resulting from an interplay of competing magnetic interactions in the presence of magnetocrystalline anisotropy.

  • 8.
    Magnuson, Martin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Tengdelius, Lina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Samuelsson, Mattias
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanodesign. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 2, artikel-id 021506Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The authors investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray photoelectron spectroscopy shows C–Ti and Si–C bonding in the Ti3SiC2 films and Si–Si bonding in the Ti3SiC2 compound target. X-ray diffraction reveals that the phases Ti3SiC2, Ti4SiC3, and Ti7Si2C5 can be deposited from a Ti3SiC2 compound target at substrate temperatures above 850 °C and with the growth of TiC and the Nowotny phase Ti5Si3Cx at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti3SiC2, Ti4SiC3, and Ti7Si2C5 on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films containing Ti3SiC2, Ti4SiC3, and Ti7Si2C5.

  • 9.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Rhein Westfal TH Aachen, Germany.
    Mraz, Stanislav
    Rhein Westfal TH Aachen, Germany.
    Hans, Marcus
    Rhein Westfal TH Aachen, Germany.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Germany.
    Control over the Phase Formation in Metastable Transition Metal Nitride Thin Films by Tuning the Al+ Subplantation Depth2019Ingår i: Coatings, ISSN 2079-6412, Vol. 9, nr 1, artikel-id 17Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The performance of transition metal nitride based coatings deposited by magnetron sputtering, in a broad range of applications including wear-protective coatings on cutting tools and components in automotive engines, is determined by their phase content. The classical example is the precipitation of thermodynamically-favored wurtzite-AlN while alloying TiN with Al to obtain ternary single phase NaCl-structure films with improved high-temperature oxidation resistance. Here, we report on reactive high-power impulse and direct current magnetron co-sputtering (HiPIMS/DCMS) growth of Ti0.31Al0.69N and Zr0.48Al0.52N thin films. The Al concentrations are intentionally chosen to be higher than theoretically predicted solubility limits for the rock salt structure. The goal is to investigate the effect of the incident Al+ energy E-Al(+), controlled by varying the amplitude of the substrate bias applied synchronously with the Al+-rich portion of the ion flux from the Al-HiPIMS source, on the crystalline phase formation. For EAl+ amp;lt;= 60 eV, films contain predominantly the wurtzite phase. With increasing E-Al(+), and thus, the Al subplantation depth, the relative fraction of the NaCl structure increases and eventually for E-Al(+) amp;gt; 250 eV, Ti0.31Al0.69N and Zr0.48Al0.52N layers contain more than 95% of the rock salt phase. Thus, the separation of the film forming species in time and energy domains determines the phase formation of Ti0.31Al0.69N and Zr0.48Al0.52N layers and enables the growth of the cubic phase outside of the predicted Al concentration range. The new film growth concept can be applied to the entire family of multinary transition metal aluminum nitrides, where one of the metallic film constituents is available in the ionized form while the other arrives as neutral.

  • 10.
    Chipatecua Godoy, Yuri
    et al.
    CINVESTAV, Mexico.
    Tengstrand, Olof
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Olaya Florez, Jairo
    Univ Nacl Colombia, Colombia.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Bustos, Erika
    CIDETEQ, Mexico.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Herrera-Gomez, Alberto
    CINVESTAV, Mexico.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating2019Ingår i: Coatings, ISSN 2079-6412, COATINGS, Vol. 9, nr 12, artikel-id 841Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ti0.92Ta0.08N and Ti0.41Al0.51Ta0.08N thin films grown on stainless-steel substrates, with no external heating, by hybrid high-power impulse and dc magnetron sputtering (HiPIMS/DCMS), were investigated for corrosion resistance. The Ta target was operated in HiPIMS mode to supply pulsed Ta-ion fluxes, while two Ti (or Ti and Al) targets were operated in DCSM mode in order to provide a high deposition rate. Corrosion resistance was investigated using potentiodynamic polarization and electrochemical impedance spectroscopy employing a 3.5% NaCl solution at room temperature. The 300-nm-thick transition-metal nitride coatings exhibited good corrosion resistance due to film densification resulting from pulsed heavy Ta-ion irradiation during film growth. Corrosion protective efficiencies were above 99.8% for both Ti0.41Al0.51Ta0.08N and Ti0.92Ta0.08N, and pore resistance was apparently four orders of magnitude higher than for bare 304 stainless-steel substrates.

  • 11.
    Yu, Hongling
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Wang, Heyong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Zhang, Jiangbin
    Univ Cambridge, England; Imperial Coll London, England.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Yuan, Zhongcheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Xu, Weidong
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Tech Univ, Peoples R China.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Bakulin, Artem A.
    Imperial Coll London, England.
    Friend, Richard H.
    Univ Cambridge, England.
    Wang, Jianpu
    Nanjing Tech Univ, Peoples R China.
    Liu, Xiaoke
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Univ Cambridge, England.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Efficient and Tunable Electroluminescence from In Situ Synthesized Perovskite Quantum Dots2019Ingår i: Small, ISSN 1613-6810, E-ISSN 1613-6829, Vol. 15, nr 8, artikel-id 1804947Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Semiconductor quantum dots (QDs) are among the most promising next-generation optoelectronic materials. QDs are generally obtained through either epitaxial or colloidal growth and carry the promise for solution-processed high-performance optoelectronic devices such as light-emitting diodes (LEDs), solar cells, etc. Herein, a straightforward approach to synthesize perovskite QDs and demonstrate their applications in efficient LEDs is reported. The perovskite QDs with controllable crystal sizes and properties are in situ synthesized through one-step spin-coating from perovskite precursor solutions followed by thermal annealing. These perovskite QDs feature size-dependent quantum confinement effect (with readily tunable emissions) and radiative monomolecular recombination. Despite the substantial structural inhomogeneity, the in situ generated perovskite QDs films emit narrow-bandwidth emission and high color stability due to efficient energy transfer between nanostructures that sweeps away the unfavorable disorder effects. Based on these materials, efficient LEDs with external quantum efficiencies up to 11.0% are realized. This makes the technologically appealing in situ approach promising for further development of state-of-the-art LED systems and other optoelectronic devices.

  • 12.
    Magnuson, Martin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Electronic Structure of ß-Ta Films from X-ray Photoelectron Spectroscopy and First-principles Calculations2019Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 470, s. 607-612Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The electronic structure and chemical bonding of ß-Ta synthesized as a thin 001-oriented film (space group P 21m) is investigated by 4f core level and valence band X-ray photoelectron spectroscopy and compared to α-Ta bulk. For the b-phase, the 4f7/2 peak is located at 21.91 eV and with the 4f5/2 at 23.81 eV which is 0.16 eV higher compared to the corresponding 4f peaks of the a-Ta reference. We suggest that this chemical shift originates from higher resistivity and tensile strain in the ß-Ta film. Furthermore, the 5d-5s states at the bottom of the valence band are shifted by 0.75 eV towards higher binding energy in ß-Ta compared to α-Ta. This is a consequence of the lower number of nearest neighbors with four in ß-Ta compared to eight in the α-Ta phase. The difference in the electronic structures, spectral line shapes of the valence band and the energy positions of the Ta 4f, 5p core-levels of b-Ta versus a-Ta are discussed in relation to calculated states of ß-Ta and α-Ta. In particular, the lower number of states at the Fermi level of ß-Ta (0.557 states/eV/atom) versus α-Ta (1.032 states/eV/atom) that according to Mott’s law should decrease the conductivity in metals and affect the stability by charge redistribution in the valence band. This is experimentally supported from resistivity measurements of the film yielding a value of ~170 µW cm in comparison to α-Ta bulk with a reported value of ~13.1 µW cm.

  • 13.
    Li, Mian
    et al.
    Chinese Acad Sci, Peoples R China.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Luo, Kan
    Chinese Acad Sci, Peoples R China.
    Li, Youbing
    Chinese Acad Sci, Peoples R China.
    Chang, Keke
    Chinese Acad Sci, Peoples R China.
    Chen, Ke
    Chinese Acad Sci, Peoples R China.
    Zhou, Jie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Du, Shiyu
    Chinese Acad Sci, Peoples R China.
    Chai, Zhifang
    Chinese Acad Sci, Peoples R China.
    Huang, Zhengren
    Chinese Acad Sci, Peoples R China.
    Huang, Qing
    Chinese Acad Sci, Peoples R China.
    Element Replacement Approach by Reaction with Lewis Acidic Molten Salts to Synthesize Nanolaminated MAX Phases and MXenes2019Ingår i: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 141, nr 11, s. 4730-4737Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesizing a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition-metal halides. The approach is a top-down route that enables the late transitional element atom (Zn in the present case) to occupy the A site in the pre-existing MAX phase structure. Using this replacement reaction between the Zn element from molten ZnCl2 and the Al element in MAX phase precursors (Ti3AlC2, Ti2AlC, Ti2AlN, and V2AlC), novel MAX phases Ti3ZnC2, Ti2ZnC, Ti2ZnN, and V2ZnC were synthesized. When employing excess ZnCl2, Cl-terminated MXenes (such as Ti3C2Cl2 and Ti2CCl2) were derived by a subsequent exfoliation of Ti3ZnC2 and Ti2ZnC due to the strong Lewis acidity of molten ZnCl2. These results indicate that A-site element replacement in traditional MAX phases by late transition-metal halides opens the door to explore MAX phases that are not thermodynamically stable at high temperature and would be difficult to synthesize through the commonly employed powder metallurgy approach. In addition, this is the first time that exclusively Cl-terminated MXenes were obtained, and the etching effect of Lewis acid in molten salts provides a green and viable route to preparing MXenes through an HF-free chemical approach.

    Publikationen är tillgänglig i fulltext från 2020-03-01 16:05
  • 14.
    Malmros, Anna
    et al.
    Chalmers Univ Technol, Sweden.
    Chen, Jr-Tai
    SweGaN, SE-58330 Linkoping, Sweden.
    Hjelmgren, Hans
    Chalmers Univ Technol, Sweden.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Kordina, Olof
    SweGaN, SE-58330 Linkoping, Sweden.
    Sveinbjörnsson, Einar
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten. Univ Iceland, Iceland.
    Zirath, Herbert
    Chalmers Univ Technol, Sweden.
    Rorsman, Niklas
    Chalmers Univ Technol, Sweden.
    Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer2019Ingår i: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, nr 7, s. 2910-2915Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    An enhancement of the electron mobility (mu) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases mu at room temperature (RT) from 1600 to 1930 cm(2)/Vs. The effect is further enhanced at cryogenic temperature (5 K), where the GaN IL sample exhibits a mu of 16 000 cm(2)/Vs, compared to 6900cm(2)/Vs without IL. The results indicate the reduction of one or more scattering mechanisms normally present in InAlN/AlN/GaN heterostructures. We propose that the improvement in mu is either due to the suppression of fluctuations in the quantum well subband energies or to reduced Coulomb scattering, both related to compositional variations in the InAlN. HEMTs fabricated on the GaN IL sample demonstrate larger improvement in dc- and high-frequency performance at 5 K; f(max) increases by 25 GHz to 153 GHz, compared to an increase of 6 GHz to 133 GHz without IL. The difference in improvement was associated mainly with the drop in the access resistances.

  • 15.
    Hellgren, Niklas
    et al.
    Messiah Coll, PA 17055 USA.
    Thörnberg, Jimmy
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Zhirkov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sortica, Maurico A.
    Uppsala Univ, Sweden.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    High-power impulse magnetron sputter deposition of TiBx thin films: Effects of pressure and growth temperature2019Ingår i: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 169, artikel-id UNSP 108884Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Titanium boride, TiBx thin films are grown in pure Ar discharges by high-power impulse magnetron sputtering (HiPIMS) from a compound TiB2 target Film compositions are determined by time-of-flight elastic recoil detection analysis and Rutherford backscattering spectrometry as a function of deposition temperature (T-s = 25-900 degrees C) and Ar pressure (p(Ar) = 0.67-2.67 Pa, 5-20 mTorr). For reference, films are also grown by direct current magnetron sputtering (dcMS) under similar conditions. The HiPIMS waveform, average target power P-T, and resulting film compositions are strongly dependent not only on P-Ar, but also on T-s. At high pressures the effect of varying T-s on P-T is minimal, while at lower P-Ar the effect of T-s is more pronounced, due to substrate-temperature-induced gas rarefaction. Films grown by HiPIMS at 0.67 Pa are understoichiometric, with B/Ti = 1.4-1.5, while at 2.67 Pa, B/Ti decreases from 2.4 to 1.4 as T-s increases from 25 to 900 degrees C. dcMS-deposited films are overstoichiometric (B/Ti similar or equal to 3) when grown at low pressures, and near-stoichiometric (B/Ti similar or equal to r 1.9-2.2) for higher P-Ar. All experimental results are explained by differences in the ionization potentials of sputtered Ti and B atoms, together with P-Ar- and T-s-dependent gas-phase scattering.

    Publikationen är tillgänglig i fulltext från 2021-08-17 15:22
  • 16.
    Landälv, Ludvig
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Sandvik Coromant AB, Sweden.
    Gothelid, Emmanuelle
    Sandvik Coromant AB, Sweden.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ahlgren, Mats
    Sandvik Coromant AB, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Influence of Si doping and O-2 flow on arc-deposited (Al,Cr)(2)O-3 coatings2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 6, artikel-id 061516Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    (Al,Cr)(2)O-3 coatings with Al/( Al + Cr) = 0.5 or Al = 70 at. %, doped with 0, 5, or 10 at. % Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings showed between 3.3 and 7.4 at. % metal fraction Si incorporated into all studied coatings depending on cathode Si composition. The incorporated Si content does not change significantly with different oxygen flows covering a wide range of deposition conditions from low to high O-2 flow during growth. The addition of Si promotes the metastable B1-like cubic structure over the thermodynamically stable corundum structure. The hardness determined by nanoindentation of the as-deposited coatings is slightly reduced upon Si incorporation as well as upon increased Al content. Si is found enriched in droplets but can also be found at a lower content, evenly spread, without visible segregation at the similar to 5 nm scale, in the actual oxide coating. The positive effect of improved cathode erosion upon Si incorporation has to be balanced against the promotion of the metastable B1-like structure, having lower room temperature hardness and inferior thermal stability compared to the corundum structure. Published by the AVS.

  • 17.
    Mockuté, Aurelija
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Oak Ridge Natl Lab, TN 37831 USA.
    Tao, Quanzheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Dahlqvist, Martin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Calder, S.
    Oak Ridge Natl Lab, TN 37831 USA.
    Caspi, E. N.
    Nucl Res Ctr Negev, Israel.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Materials synthesis, neutron powder diffraction, and first-principles calculations of (MoxSc1-x)(2)AlC i-MAX phase used as parent material for MXene derivation2019Ingår i: PHYSICAL REVIEW MATERIALS, ISSN 2475-9953, Vol. 3, nr 11, artikel-id 113607Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Research on low-dimensional materials has increased drastically in the last decade, with the discovery of two-dimensional transition metal carbides and nitrides (MXenes) produced by atom-selective chemical etching of laminated parent M(n+1)AX(n) (MAX) phases. Here, we apply density functional theory and subsequent materials synthesis and analysis to explore the phase stability and Mo/Sc intermixing on the M site in the chemically ordered quaternary i-MAX phase (MoxSc1-x)(2)AlC. Transmission electron microscopy confirms the theoretical predictions of preferential in-plane ordering of Mo and Sc, with the highest crystal quality obtained for the ideal Mo:Sc ratio of 2:1 (predicted as the most stable), as well as a retained i-MAX structure even for an increased relative Sc content, with Sc partially occupying Mo sites. The results are supported by refined neutron diffraction data, which show space group C2/c (no. 15), and a C occupancy of 1. Subsequent chemical etching produces MXene for x = 0.66, while for x = 0.33 and 0.5 no MXene is observed. These results demonstrate that a precise control of the i-MAX composition is crucial for derivation of MXene, with a MXene quality optimized for a Mo:Sc ratio of 2:1 with minimal intermixing between Mo and Sc.

  • 18.
    Edström, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Orebro Univ, Sweden.
    Sangiovanni, Davide
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr Univ Bochum, Germany.
    Landälv, Ludvig
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Sandvik Coromant AB, Sweden.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mechanical properties of VMoNO as a function of oxygen concentration: Toward development of hard and tough refractory oxynitrides2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 6, artikel-id 061508Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Improved toughness is a central goal in the development of wear-resistant refractory ceramic coatings. Extensive theoretical and experimental research has revealed that NaCl-structure VMoN alloys exhibit surprisingly high ductility combined with high hardness and toughness. However, during operation, protective coatings inevitably oxidize, a problem that may compromise material properties and performance. Here, the authors explore the role of oxidation in altering VMoN properties. Density functional theory and theoretical intrinsic hardness models are used to investigate the mechanical behavior of cubic V0.5Mo0.5N1-xOx solid solutions as a function of the oxygen concentration x. Elastic constant and intrinsic hardness calculations show that oxidation does not degrade the mechanical properties of V0.5Mo0.5N. Electronic structure analyses indicate that the presence of oxygen reduces the covalent bond character, which slightly lowers the alloy strength and intrinsic hardness. Nevertheless, the character of metallic d-d states, which are crucial for allowing plastic deformation and enhancing toughness, remains unaffected. Overall, the authors results suggest that VMoNO oxynitrides, with oxygen concentrations as high as 50%, possess high intrinsic hardness, while still being ductile. Published by the AVS.

  • 19.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 6, artikel-id 060801Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ion refractory ceramic thin films grown at low temperatures by magnetron sputtering. However, in contrast to gas-ion bombardment, the effects of metal-ion irradiation on properties of refractory ceramic thin films have not been extensively studied due to (i) low metal-ion concentrations (a few percents) during standard direct-current magnetron sputtering (DCMS) and (ii) difficulties in separating metal-ion from gas-ion fluxes. Recently, the situation has changed dramatically, thanks to the development of highpower impulse magnetron sputtering (HiPIMS), which provides highly-ionized metal-ion plasmas. In addition, careful choice of sputtering conditions allows exploitation of gas-rarefaction effects such that the charge state, energy, and momentum of metal ions incident at the growing film surface can be tuned. This is possible via the use of pulsed substrate bias, synchronized to the metal-ion-rich portion of each HiPIMS pulse. In this review, the authors begin by summarizing the results of time-resolved mass spectrometry analyses performed at the substrate position during HiPIMS and HiPIMS/DCMS cosputtering of transition-metal (TM) targets in Ar and Ar/N-2 atmospheres. Knowledge of the temporal evolution of metal- and gas-ion fluxes is essential for precise control of the incident metal-ion energy and for minimizing the role of gas-ion irradiation. Next, the authors review results on the growth of binary, pseudobinary, and pseudoternary TM nitride alloys by metal-ion-synchronized HiPIMS. In contrast to gas ions, a fraction of which are trapped at interstitial sites, metal ions are primarily incorporated at lattice sites resulting in much lower compressive stresses. In addition, the closer mass match with the film-forming species results in more efficient momentum transfer and provides the recoil density and energy necessary to eliminate film porosity at low deposition temperatures. Several novel film-growth pathways have been demonstrated: (i) nanostructured N-doped bcc-CrN0.05 films combining properties typically associated with both metals and ceramics, (ii) fully-dense, hard, and stress-free Ti0.39Al0.61N, (iii) single-phase cubic Ti1-xSixN with the highest reported SiN concentrations, (iv) unprecedented AlN supersaturation in single-phase NaCl-structure V1-xAlxN, and (v) a dramatic increase in the hardness, due to selective heavy-metal ion bombardment during growth, of dense Ti0.92Ta0.08N films deposited with no external heating. (C) 2019 Author(s).

  • 20.
    Landälv, Ludvig
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Sandvik Coromant AB, Stockholm, Sweden.
    Carlström, C-F
    Sandvik Coromant AB, Stockholm, Sweden.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Primetzhofer, D.
    Applied Nuclear Physics, Department of Physics and Astronomy, Uppsala University, Uppsala, Sweden.
    Jöesaar, M. J.
    SECO Tools AB, Fagersta, Sweden.
    Ahlgren, M.
    Sandvik Coromant AB, Stockholm, Sweden.
    Göthelid, E.
    Sandvik Coromant AB, Stockholm, Sweden.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Phase composition and transformations in magnetron-sputtered (Al,V)2O3 coatings2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, artikel-id 137369Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63–42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains when lowering the vanadium content towards pure γ-Al2O3. Annealing in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 °C for 42 at.% V and 700 °C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure γ-Al2O3-coating, which transformed to α-Al2O3 after annealing to 1100 °C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings.

  • 21.
    Landälv, Ludvig
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Sandvik Coromant AB, Sweden.
    Rogström, Lina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ostach, Daniel
    Helmholtz Zentrum Geesthacht, Germany.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Junaid, Muhammad
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ghafoor, Naureen
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ekström, Erik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hsiao, Ching-Lien
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Leiste, Harald
    Karlsruhe Inst Technol, Germany.
    Ahlgren, Mats
    Sandvik Coromant AB, Sweden.
    Gothelid, Emmanuelle
    Sandvik Coromant AB, Sweden.
    Ailing, Bjorn
    Not Found:Linkoping Univ, Theoret Phys, Dept Phys Chem and Biol IFM, SE-58183 Linkoping, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Stuber, Michael
    Karlsruhe Inst Technol, Germany.
    Schell, Norbert
    Helmholtz Zentrum Geesthacht, Germany.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Phase evolution of radio frequency magnetron sputtered Cr-rich (Cr,Zr)(2)O-3 coatings studied by in situ synchrotron X-ray diffraction during annealing in air or vacuum2019Ingår i: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 34, nr 22, s. 3735-3746Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The phase evolution of reactive radio frequency (RF) magnetron sputtered Cr0.28Zr0.10O0.61 coatings has been studied by in situ synchrotron X-ray diffraction during annealing under air atmosphere and vacuum. The annealing in vacuum shows t-ZrO2 formation starting at similar to 750-800 degrees C, followed by decomposition of the alpha-Cr2O3 structure in conjunction with bcc-Cr formation, starting at similar to 950 degrees C. The resulting coating after annealing to 1140 degrees C is a mixture of t-ZrO2, m-ZrO2, and bcc-Cr. The air-annealed sample shows t-ZrO2 formation starting at similar to 750 degrees C. The resulting coating after annealing to 975 degrees C is a mixture of t-ZrO2 and alpha-Cr2O3 (with dissolved Zr). The microstructure coarsened slightly during annealing, but the mechanical properties are maintained, with no detectable bcc-Cr formation. A larger t-ZrO2 fraction compared with alpha-Cr2O3 is observed in the vacuum-annealed coating compared with the air-annealed coating at 975 degrees C. The results indicate that the studied pseudo-binary oxide is more stable in air atmosphere than in vacuum.

  • 22.
    Petrov, Ivan
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61820 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Stueber, Michael
    KIT, Germany.
    Chen, Li-Chyong
    Natl Taiwan Univ, Taiwan.
    Desjardins, Patrick
    Ecole Polytech Montreal, Canada.
    Preface of the special issue "Thin Films Advances" dedicated to the 75th birthday of Professor Joe Greene2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, artikel-id 137494Artikel i tidskrift (Övrigt vetenskapligt)
    Abstract [en]

    n/a

    Publikationen är tillgänglig i fulltext från 2021-08-03 09:54
  • 23.
    Magnuson, Martin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Tengdelius, Lina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Samuelsson, Mattias
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanodesign. Linköpings universitet, Tekniska fakulteten.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, artikel-id 137384Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    W-B-C films were deposited on Si(100) substrates held at elevated temperature by reactive sputtering from a W target in Kr/trimethylboron (TMB) plasmas. Quantitative analysis by Xray photoelectron spectroscopy (XPS) shows that the films are W-rich between ~ 73 and ~ 93 at.% W. The highest metal content is detected in the film deposited with 1 sccm TMB. The C and B concentrations increase with increasing TMB flow to a maximum of ~18 and ~7 at.%, respectively, while the O content remains nearly constant at 2-3 at.%. Chemical bonding structure analysis performed after samples sputter-cleaning reveals C-W and B-W bonding and no detectable W-O bonds. During film growth with 5 sccm TMB and 500 o C or with 10 sccm TMB and 300-600 o C thin film X-ray diffraction shows the formation of cubic 100-oriented WC1-x with a possible solid solution of B. Lower flows and lower growth temperatures favor growth of W and W2C, respectively. Depositions at 700 and 800 o C result in the formation of WSi2 due to a reaction with the substrate. At 900 o C, XPS analysis shows ~96 at.% Si in the film due to Si interdiffusion. Scanning electron microscopy images reveal a fine-grained microstructure for the deposited WC1-x films. Nanoindentation gives hardness values in the range from ~23 to ~31 GPa and reduced elastic moduli between ~220 and 280 GPa in the films deposited at temperatures lower than 600 o C. At higher growth temperatures the hardness decreases by a factor of 3 to 4 following the formation of WSi2 at 700-800 o C and Si-rich surface at 900 o C.

    Publikationen är tillgänglig i fulltext från 2021-06-22 08:00
  • 24.
    Li, Youbing
    et al.
    Chinese Acad Sci, Peoples R China; Univ Chinese Acad Sci, Peoples R China.
    Li, Mian
    Chinese Acad Sci, Peoples R China.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ma, Baokai
    Chinese Acad Sci, Peoples R China; Ningbo Univ, Peoples R China.
    Wang, Zhipan
    Ningbo Univ, Peoples R China.
    Cheong, Ling-Zhi
    Ningbo Univ, Peoples R China.
    Luo, Kan
    Chinese Acad Sci, Peoples R China.
    Zha, Xianhu
    Chinese Acad Sci, Peoples R China.
    Chen, Ke
    Chinese Acad Sci, Peoples R China.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Shen, Cai
    Chinese Acad Sci, Peoples R China.
    Wang, Qigang
    Tongji Univ, Peoples R China.
    Xue, Jianming
    Peking Univ, Peoples R China.
    Du, Shiyu
    Chinese Acad Sci, Peoples R China.
    Huang, Zhengren
    Chinese Acad Sci, Peoples R China.
    Chai, Zhifang
    Chinese Acad Sci, Peoples R China.
    Huang, Qing
    Chinese Acad Sci, Peoples R China.
    Single-Atom-Thick Active Layers Realized in Nanolaminated Ti-3(AlxCu1-x)C-2 and Its Artificial Enzyme Behavior2019Ingår i: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 13, nr 8, s. 9198-9205Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A Ti-3(AlxCu1-x)C-2 phase with Cu atoms with a degree of ordering in the A plane is synthesized through the A site replacement reaction in CuCl2 molten salt. The weakly bonded single -atom -thick Cu layers in a Ti-3(AlxCu1-x)C-2 MAX phase provide actives sites for catalysis chemistry. As -synthesized Ti-3(AlxCu1-x)C-2 presents unusual peroxidase-like catalytic activity similar to that of natural enzymes. A fabricated Ti-3(AlxCu1-x)C-2/chitosan/glassy carbon electrode biosensor prototype also exhibits a low detection limit in the electrochemical sensing of H2O2. These results have broad implications for property tailoring in a nanolaminated MAX phase by replacing the A site with late transition elements.

    Publikationen är tillgänglig i fulltext från 2020-07-22 15:15
  • 25.
    Bakhit, Babak
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Engberg, David
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1-xTaxBy thin films2019Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 37, nr 3, artikel-id 031506Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Refractory transition-metal diborides exhibit inherent hardness. However, this is not always sufficient to prevent failure in applications involving high mechanical and thermal stress, since hardness is typically accompanied by brittleness leading to crack formation and propagation. Toughness, the combination of hardness and ductility, is required to avoid brittle fracture. Here, the authors demonstrate a strategy for simultaneously enhancing both hardness and ductility of ZrB2-rich thin films grown in pure Ar on Al2O3(0001) and Si(001) substrates at 475 degrees C. ZrB2.4 layers are deposited by dc magnetron sputtering (DCMS) from a ZrB2 target, while Zr1-xTaxBy alloy films are grown, thus varying the B/metal ratio as a function of x, by adding pulsed high-power impulse magnetron sputtering (HiPIMS) from a Ta target to deposit Zr1-xTaxBy alloy films using hybrid Ta-HiPIMS/ZrB2-DCMS sputtering with a substrate bias synchronized to the metal-rich portion of each HiPIMS pulse. The average power P-Ta (and pulse frequency) applied to the HiPIMS Ta target is varied from 0 to 1800W (0 to 300 Hz) in increments of 600W (100 Hz). The resulting boron-to-metal ratio, y = B/(Zr+Ta), in as-deposited Zr1-xTaxBy films decreases from 2.4 to 1.5 as P-Ta is increased from 0 to 1800W, while x increases from 0 to 0.3. A combination of x-ray diffraction (XRD), glancing-angle XRD, transmission electron microscopy (TEM), analytical Z-contrast scanning TEM, electron energy-loss spectroscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, and atom-probe tomography reveals that all films have the hexagonal AlB2 crystal structure with a columnar nanostructure, in which the column boundaries of layers with 0 amp;lt;= x amp;lt; 0.2 are B-rich, whereas those with x amp;gt;= 0.2 are Ta-rich. The nanostructural transition, combined with changes in average column widths, results in an similar to 20% increase in hardness, from 35 to 42 GPa, with a simultaneous increase of similar to 30% in nanoindentation toughness, from 4.0 to 5.2MPa root m. Published by the AVS.

  • 26.
    Mockuté, Aurelija
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Palisaitis, Justinas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Nedfors, Nils
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Berastegui, P.
    Uppsala Univ, Sweden.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten. SKF Res and Technol Dev Ctr, Netherlands.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Näslund, Lars-Åke
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Patscheider, J.
    Evatec AG, Switzerland.
    Jansson, U.
    Uppsala Univ, Sweden.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Synthesis and characterization of (Ti1-xAlx)B2+Delta thin films from combinatorial magnetron sputtering2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 669, s. 181-187Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    (Ti1-xAlx)B2+Delta films with a lateral composition gradient of x = [0.30-0.66] and Delta = [0.07-1.22] were deposited on an Al2O3 wafer by dual magnetron sputtering at 400 degrees C from sintered TiB2 and AlB2 targets. Composition analysis indicates that higher Ti:Al ratios favor overstoichiometry in B and a reduced incorporation of O. Transmission electron microscopy reveals distinctly different microstructures of Ti- and Al-rich compositions, with formation of characteristic conical growth features for the latter along with a lower degree of crystallinity and significantly less tissue phase from B segregation at the grain boundaries. For Al-rich films, phase separation into Ti- and Al-rich diboride nanometer-size domains is observed and interpreted as surface-initiated spinodal decomposition. The hardness of the films ranges from 14 to 28 GPa, where the higher values were obtained for the Ti-rich regions of the metal boride.

    Publikationen är tillgänglig i fulltext från 2020-10-26 15:00
  • 27.
    Mian, Li
    et al.
    Chinese Acad Sci, Peoples R China.
    You-Bing, Li
    Chinese Acad Sci, Peoples R China.
    Kan, Luo
    Chinese Acad Sci, Peoples R China.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Shi-Yu, Du
    Chinese Acad Sci, Peoples R China.
    Zheng-Ren, Huang
    Chinese Acad Sci, Peoples R China.
    Qing, Huang
    Chinese Acad Sci, Peoples R China.
    Synthesis of Novel MAX Phase Ti3ZnC2 via A-site-element-substitution Approach2019Ingår i: Journal of Inorganic Materials, ISSN 1000-324X, Vol. 34, nr 1, s. 60-64Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Using Ti3AlC2 as the precursor, a new MAX phase Ti3ZnC2 was synthesized via an A-elemental substitution reaction in a molten salts bath. Composition and crystal structure of Ti3ZnC2 were confirmed by XRD, SEM and TEM analysis. Its structure stability and lattice parameter of Ti3ZnC2 were further proved by a theoretical calculation based on density function theory (DFT). Moreover, thermodynamics of A-elemental substitution reactions based on Fe, Co, Ni, and Cu were investigated. All results indicated that the similar substitution reactions are feasible to form series of MAX phases whose A sites are Fe, Co, Ni, and Cu elements. The substitution reaction was achieved by diffusion of Zn atoms into A-layers of Ti3AlC2, which requires Al-Zn eutectic formation at high temperatures. The molten salts provided a moderate environment for substitution reaction and accelerated reaction dynamics. The major advantage of this substitution reaction is that MAX phase keeps individual metal carbide layers intact, thus the formation of competitive phases, such as MA alloys, was avoided. The proposed A-elemental substitution reactions approach opens a new door to design and synthesize novel MAX phases which could not be synthesized by the traditional methods.

  • 28.
    Thörnberg, Jimmy
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Halim, Joseph
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Meshkian, Rahele
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Palisaitis, Justinas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Synthesis of (V2/3Sc1/3)(2)AlC i-MAX phase and V2-xC MXene scrolls2019Ingår i: Nanoscale, ISSN 2040-3364, E-ISSN 2040-3372, Vol. 11, nr 31, s. 14720-14726Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report the synthesis and characterization of a new laminated i-MAX phase, (V2/3Sc1/3)(2)AlC, with in-plane chemical ordering between the M-elements. We also present evidence for the solid solution (V2-xScx)(2)AlC, where x amp;lt;= 0.05. Chemical etching of the Al and Sc results in a two-dimensional (2D) MXene counterpart: V2-xC from the latter phase. Furthermore, etching with HF yields single-sheet MXene of flat morphology, while LiF + HCl gives MXene scrolls. We also show a 4x reduction in etching time for (V2-xScx)(2)AlC compared to V2AlC, suggesting that traces of Sc changes the phase stability, and make the material more susceptible to etching. The results show a path for improved control of MXene synthesis and morphology, which may be applicable also for other MAX/MXene systems.

  • 29.
    Edström, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Orebro Univ, Sweden.
    Sangiovanni, Davide
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr Univ Bochum, Germany.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Natl Taiwan Univ Sci and Technol, Taiwan.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy2019Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 688, artikel-id 137380Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We perform large-scale molecular dynamics simulations of TiN deposition at 1200 K on TiN substrates consisting of under-stoichiometric (N/Ti = 0.86) misoriented grains. The energy of incoming Ti atoms is 2 eV and that of incoming N atoms is 10 eV. The simulations show that misoriented grains are reoriented during the early stages of growth, after which the film grows 001 epitaxially and is nearly stoichiometric. The grain reorientation coincides with an increase in film N/Ti ratio. As the grains reorient, additional nitrogen can no longer be accommodated, and the film composition becomes stoichiometric as the overlayer grows epitaxially.

    Publikationen är tillgänglig i fulltext från 2021-06-20 11:38
  • 30.
    Lu, Jun
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Chen, Jr-Tai
    SweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden.
    Dahlqvist, Martin
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Kabouche, Riad
    Inst Elect Microelect and Nanotechnol, France.
    Medjdoub, Farid
    Inst Elect Microelect and Nanotechnol, France.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Kordina, Olof
    SweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors2019Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 115, nr 22, artikel-id 221601Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN nucleation layers (NLs) grown by metalorganic chemical vapor deposition on SiC (0001) substrates mediated by an interface extending over two atomic layers L1 and L2 with composition (Al1/3Si2/3)(2/3)N and (Al2/3Si1/3)N, respectively. It is remarkable that the interfaces have ordered vacancies on one-third of the Al/Si position in L1, as shown here by analytical scanning transmission electron microscopy and ab initio calculations. This unique interface is coined the out-of-plane compositional-gradient with in-plane vacancy-ordering and can perfectly transform the in-plane lattice atomic configuration from the SiC substrate to the AlN NL within 1 nm thick transition. This transmorphic epitaxial scheme enables a critical breakdown field of similar to 2 MV/cm achieved in thin GaN-based transistor heterostructures grown on top. Lateral breakdown voltages of 900 V and 1800 V are demonstrated at contact distances of 5 and 20 mu m, respectively, and the vertical breakdown voltage is amp;gt;= 3 kV. These results suggest that the transmorphic epitaxially grown AlN layer on SiC may become the next paradigm for GaN power electronics. (C) 2019 Author(s).

  • 31.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Odén, Magnus
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Nanostrukturerade material. Linköpings universitet, Tekniska fakulteten.
    X-ray photoelectron spectroscopy studies of Ti1-xAlxN (0 <= x <= 0.83) high-temperature oxidation: The crucial role of Al concentration2019Ingår i: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 374, s. 923-934Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The resistance to high-temperature oxidation of Ti1-xAlxN films determines performance in numerous applications including coated cutting tools. Here, we present a comprehensive study covering Ti1-xAlxN films with 0 amp;lt;= x amp;lt;= 0.83 annealed in air for 1 h at temperatures T-a ranging from 500 to 800 degrees C. Layers are grown by the combination of high-power impulse and dc magnetron sputtering (HiPIMS/DCMS) in Ar/N-2 atmospheres. We use X-ray photoelectron spectroscopy to study the evolution of surface chemistry and to reconstruct elemental distribution profiles. No dependence of oxidation process on the phase content, average grain size, or preferred orientation could be confirmed, to the accuracy offered by the employed X-ray diffraction techniques. Instead, our results show that, under the applied test conditions, the Ti1-xAlxN oxidation scenario depends on both x and T-a. The common notion of double-layer Al2O3/TiO2 oxide formation is valid only in a limited region of the x-T-a parameter space (Type-1 oxidation). Outside this range, a mixed and non-conformal Al2O3-TiO2 layer forms, characterized by larger oxide thickness (Type-2 oxidation). The clear distinction between different Ti1-xAlxN oxidation scenarios revealed here is essential for numerous applications that can benefit from optimizing the Al content, while targeting a given operational temperature range.

  • 32.
    Chen, Jr-Tai
    et al.
    SweGaN AB, Teknikringen 8D, Linköping, Sweden.
    Bergsten, Johan
    Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Janzén, Erik
    SweGaN AB, Teknikringen 8D, Linköping, Sweden.
    Thorsell, Mattias
    Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rorsman, Niklas
    Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
    Kordina, Olof
    SweGaN AB, Teknikringen 8D, Linköping, Sweden.
    A GaN-SiC hybrid material for high-frequency and power electronics2018Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 113, nr 4, artikel-id 041605Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001) substrates can be accommodated without triggering extended defects over large areas using a grain-boundary-free AIN nucleation layer (NL). Defect formation in the initial epitaxial growth phase is thus significantly alleviated, confirmed by various characterization techniques. As a result, a high-quality 0.2-mu m thin GaN layer can be grown on the AIN NL and directly serve as a channel layer in power devices, like high electron mobility transistors (HEMTs). The channel electrons exhibit a state-of-the-art mobility of amp;gt;2000 cm(2)/V-s, in the AlGaN/GaN heterostructures without a conventional thick C- or Fe-doped buffer layer. The highly scaled transistor processed on the heterostructure with a nearly perfect GaN-SiC interface shows excellent DC and microwave performances. A peak RF power density of 5.8 W/mm was obtained at V-DSQ = 40 V and a fundamental frequency of 30 GHz. Moreover, an unpassivated 0.2-mu m GaN/AIN/SiC stack shows lateral and vertical breakdowns at 1.5 kV. Perfecting the GaN-SiC interface enables a GaN-SiC hybrid material that combines the high-electron-velocity thin GaN with the high-breakdown bulk SiC, which promises further advances in a wide spectrum of high-frequency and power electronics.

  • 33.
    Magnuson, Martin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Tengdelius, Lina
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Högberg, Hans
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    ­Chemical Bonding in Epitaxial ZrB2 Studied by X-ray Spectroscopy2018Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 649, s. 89-96Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The chemical bonding in an epitaxial ZrB2 film is investigated by Zr K-edge (1s) X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopies and compared to the ZrB2 compound target from which the film was synthesized as well as a bulk α-Zr reference. Quantitative analysis of X-ray Photoelectron Spectroscopy spectra reveals at the surface: ~5% O in the epitaxial ZrB2 film, ~19% O in the ZrB2 compound target and ~22% O in the bulk α-Zr reference after completed sputter cleaning. For the ZrB2 compound target, X-ray diffraction (XRD) shows weak but visible   11, 111, and 220 peaks from monoclinic ZrO2 together with peaks from ZrB2 and where the intensity distribution for the ZrB2 peaks show a randomly oriented target material.  For the bulk α-Zr reference no peaks from any crystalline oxide were visible in the diffractogram recorded from the 0001-oriented metal. The Zr K-edge absorption from the two ZrB2 samples demonstrate more pronounced oscillations for the epitaxial ZrB2 film than in the bulk ZrB2 attributed to the high atomic ordering within the columns of the film. The XANES exhibits no pre-peak due to lack of p-d hybridization in ZrB2, but with a chemical shift towards higher energy of 4 eV in the film and 6 eV for the bulk compared to α-Zr (17.993 keV) from the charge-transfer from Zr to B. The 2 eV larger shift in bulk ZrB2 material suggests higher oxygen content than in the epitaxial film, which is supported by XPS. In EXAFS, the modelled cell-edge in ZrB2 is slightly smaller in the thin film (a=3.165 Å, c=3.520 Å) in comparison to the bulk target material (a=3.175 Å, c=3.540 Å) while in hexagonal closest-packed metal (α-phase, a=3.254 Å, c=5.147 Å). The modelled coordination numbers show that the EXAFS spectra of the epitaxial ZrB2 film is highly anisotropic with strong in-plane contribution, while the bulk target material is more isotropic. The Zr-B distance in the film of 2.539 Å is in agreement with the calculated value from XRD data of 2.542 Å. This is slightly shorter compared to that in the ZrB2 compound target 2.599 Å, supporting the XANES results of a higher atomic order within the columns of the film compared to bulk ZrB2.

  • 34.
    Bakhit, Babak
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering2018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 3, artikel-id 030604Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    TiBx thin films grown from compound TiB2 targets by magnetron sputter deposition are typically highly over-stoichiometric, with x ranging from 3.5 to 2.4, due to differences in Ti and B preferential-ejection angles and gas-phase scattering during transport from the target to the substrate. Here, the authors demonstrate that stoichiometric TiB2 films can be obtained using highpower impulse magnetron sputtering (HiPIMS) operated in power-controlled mode. The B/Ti ratio x of films sputter-deposited in Ar is controllably varied from 2.08 to 1.83 by adjusting the length of HiPIMS pulses t(on) between 100 and 30 mu s, while maintaining average power and pulse frequency constant. This results in peak current densities J(T), peak ranging from 0.27 to 0.88 A/cm(2). Energy- and time-resolved mass spectrometry analyses of the ion fluxes incident at the substrate position show that the density of metal ions increases with decreasing t(on) due to a dramatic increase in J(T, peak) resulting in the strong gas rarefaction. With t(on)amp;lt;60 mu s (J(T),(peak)amp;gt; 0.4 A/cm(2)), film growth is increasingly controlled by ions incident at the substrate, rather than neutrals, as a result of the higher plasma dencity and, hence, electron-impact ionization probablity. Thus, since sputter- ejected Ti atoms have a higher probability of being ionized than B atoms, due to their lower first-ionization potential and larger ionization cross-section, the Ti concentration in as-deposited films increases with decreasing ton (increasing J(T,peak)) as ionized sputtered species are steered to the substrate by the plasma in order to maintain charge neutrality. Published by the AVS.

  • 35.
    Junaid, Muhammad
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hsiao, Ching-Lien
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Chen, Yen-Ting
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Palisaitis, Justinas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Effects of N2 Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy2018Ingår i: Nanomaterials, ISSN 2079-4991, Vol. 8, nr 4, artikel-id 223Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    GaN nanorods, essentially free from crystal defects and exhibiting very sharp band-edge luminescence, have been grown by reactive direct-current magnetron sputter epitaxy onto Si (111) substrates at a low working pressure of 5 mTorr. Upon diluting the reactive N2 working gas with a small amount of Ar (0.5 mTorr), we observed an increase in the nanorod aspect ratio from 8 to ~35, a decrease in the average diameter from 74 to 35 nm, and a two-fold increase in nanorod density. With further dilution (Ar = 2.5 mTorr), the aspect ratio decreased to 14, while the diameter increased to 60 nm and the nanorod density increased to a maximum of 2.4 × 109 cm−2. Yet, lower N2 partial pressures eventually led to the growth of continuous GaN films. The observed morphological dependence on N2 partial pressure is explained by a change from N-rich to Ga-rich growth conditions, combined with reduced GaN-poisoning of the Ga-target as the N2 gas pressure is reduced. Nanorods grown at 2.5 mTorr N2 partial pressure exhibited a high intensity 4 K photoluminescence neutral donor bound exciton transitions (D0XA) peak at ~3.479 eV with a full-width-at-half-maximum of 1.7 meV. High-resolution transmission electron microscopy corroborated the excellent crystalline quality of the nanorods.

  • 36.
    Sangiovanni, Davide
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr University of Bochum, Germany.
    Mei, A. B.
    University of Illinois, IL 61801 USA; Cornell University, NY 14853 USA.
    Edström, Daniel
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. University of Illinois, USA.
    Effects of surface vibrations on interlayer mass transport: Ab initio molecular dynamics investigation of Ti adatom descent pathways and rates from TiN/TiN(001) islands2018Ingår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 97, nr 3, artikel-id 035406Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We carried out density-functional ab initio molecular dynamics (AIMD) simulations of Ti adatom (Ti-ad ) migration on, and descent from, square TiN(100) epitaxial islands on TiN(001) at temperatures (T) ranging from 1200 to 2400 K. Adatom-descent energy barriers determined via ab initio nudged-elastic-band calculations at 0 Kelvin suggest that Ti interlayer transport on TiN(001) occurs essentially exclusively via direct hopping onto a lower layer. However, AIMD simulations reveal comparable rates for Ti-ad descent via direct hopping vs push-out/exchange with a Ti island-edge atom for T amp;gt;= 1500 K. We demonstrate that this effect is due to surface vibrations, which yield considerably lower activation energies at finite temperatures by significantly modifying the adatom push-out/exchange reaction pathway.

  • 37.
    Edström, Daniel
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sangiovanni, Davide
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Ruhr Univ Bochum, Germany.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Chirita, Valeriu
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Elastic properties and plastic deformation of TiC- and VC-based alloys2018Ingår i: Acta Materialia, ISSN 1359-6454, E-ISSN 1873-2453, Vol. 144, s. 376-385Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Transition-metal (TM) carbides are an important class of hard, protective coating materials; however, their brittleness often limits potential applications. We use density functional theory to investigate the possibility of improving ductility by forming pseudobinary cubic (MMC)-M-1-C-2 alloys, for which M-1 = Ti or V and M-2 = W or Mo. The alloying elements are chosen based on previous results showing improved ductility of the corresponding pseudobinary nitride alloys with respect to their parent compounds. While commonly-used empirical criteria do not indicate enhanced ductility in the carbide alloys, calculated stress/strain curves along known slip systems, supported by electronic structure analyses, indicate ductile behavior for VMoC. As VMoC layers are sheared along the 1 (1) over bar0 direction on {111} planes, the stress initially increases linearly up to a yield point where the accumulated stress is partially dissipated. With further increase in strain, the stress increases again until fracture occurs. A similar mechanical behavior is observed for the corresponding TM nitride VMoN, known to be a ductile ceramic material [1]. Thus, our results show that VMoC is a TM carbide alloy which may be both hard and ductile, i.e. tough. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  • 38.
    Mühlbacher, Marlene
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Greczynski, Grzegorz
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sartory, Bernhard
    Mat Ctr Leoben Forsch GmbH, Austria.
    Schalk, Nina
    Univ Leoben, Austria.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA; Univ Illinois, IL 61801 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Mitterer, Christian
    Univ Leoben, Austria.
    Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers2018Ingår i: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 8, artikel-id 5360Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We compare the performance of conventional DC magnetron sputter-deposited (DCMS) TiN diffusion barriers between Cu overlayers and Si(001) substrates with Ti0.84Ta0.16N barriers grown by hybrid DCMS/high-power impulse magnetron sputtering (HiPIMS) with substrate bias synchronized to the metal-rich portion of each pulse. DCMS power is applied to a Ti target, and HiPIMS applied to Ta. No external substrate heating is used in either the DCMS or hybrid DCMS/HiPIMS process in order to meet future industrial thermal-budget requirements. Barrier efficiency in inhibiting Cu diffusion into Si(001) while annealing for 1 hour at temperatures between 700 and 900 degrees C is investigated using scanning electron microscopy, X-ray diffraction, four-point-probe sheet resistance measurements, transmission electron microscopy, and energy-dispersive X-ray spectroscopy profiling. Ti0.84Ta0.16N barriers are shown to prevent large-scale Cu diffusion at temperatures up to 900 degrees C, while conventional TiN barriers fail at amp;lt;= 700 degrees C. The improved performance of the Ti0.84Ta0.16N barrier is due to film densification resulting from HiPIMS pulsed irradiation of the growing film with synchronized Ta ions. The heavy ion bombardment dynamically enhances near-surface atomic mixing during barrier-layer deposition.

  • 39.
    Kindlund, Hanna
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten.
    Petrov, Ivan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Greene, Joseph E
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. Univ Illinois, IL 61801 USA.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin films2018Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 36, nr 5, artikel-id 051512Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Pseudobinary V0.5Mo0.5Nx(111) alloys with the Bl-NaCl crystal structure are grown on Al2O3(0001) substrates in an ultra-high-vacuum system by reactive magnetron sputter deposition in mixed Ar/N-2 atmospheres at temperatures T-s between 100 and 900 degrees C. Nitrogen-to-metal, N/(V + Mo), fractions x vary monotonically from 0.9 +/- 0.1 with T-s = 100 degrees C to 0.4 +/- 0.1 at T-s = 900 degrees C. Nitrogen loss at higher growth temperatures leads to a corresponding decrease in the relaxed lattice parameter a(o) from 4.21 +/- 0.01 angstrom at T-s = 300 degrees C to 4.125 +/- 0.005 angstrom with T-s = 900 degrees C. Scanning electron micrographs of cube-corner nanoindents extending into the substrate show that the films are relatively ductile, exhibiting material pile-up (plastic flow) around the indent edges. Nanoindentation hardnesses H and elastic moduli E, obtained using a calibrated Berkovich tip, of V0.5Mo0.5Nx(111) layers increase with increasing T-s(decreasing x) from 15 +/- 1 and 198 +/- 5 GPa at 100 degrees C to 23 +/- 2 and 381 +/- 11 GPa at 900 degrees C. These values are lower than the corresponding results obtained for the 001-oriented V0.5Mo0.5Nx films In addition, film wear resistance increases with increasing T-s, while the coefficient of friction, under 1000 mu N loads, is 0.09 +/- 0.01 for all layers. Published by the AVS.

  • 40.
    Kuo, Yu-Hung
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Magnusson, Roger
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Serban, Alexandra
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sandström, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Järrendahl, Kenneth
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Birch, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hsiao, Ching-Lien
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Influence of InAiN Nanospiral Structures on the Behavior of Reflected Light Polarization2018Ingår i: NANOMATERIALS, ISSN 2079-4991, Vol. 8, nr 3, artikel-id 157Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The influence of structural configurations of indium aluminum nitride (InA1N) nanospirals, grown by reactive magnetron sputter epitaxy, on the transformation of light polarization are investigated in terms of varying structural chirality, growth temperatures, titanium nitride (TiN) seed (buffer) layer thickness, nanospiral thickness, and pitch. The handedness of reflected circularly polarized light in the ultraviolet-visible region corresponding to the chirality of nanospirals is demonstrated. A high degree of circular polarization (P-c) value of 0.75 is obtained from a sample consisting of 1.2 mu m InA1N nanospirals grown at 650 degrees C. A film-like structure is formed at temperatures lower than 450 degrees C. At growth temperatures higher than 750 degrees C, less than 0.1 In-content is incorporated into the InA1N nanospirals. Both cases reveal very low P-c-A red shift of wavelength at P-c peak is found with increasing nanospiral pitch in the range of 200-300 nm. The P-c decreases to 0.37 for two-turn nanospirals with total length of 0.7 mu m, attributed to insufficient constructive interference. A branch-like structure appears on the surface when the nanospirals are grown longer than 1.2 mu m, which yields a low P-c around 0.5, caused by the excessive scattering of incident light.

  • 41.
    Ning, Weihua
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Tech Univ, Peoples R China.
    Wang, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Wu, Bo
    Nanyang Technol Univ, Singapore.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Yan, Zhibo
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten. Nanjing Univ, Peoples R China.
    Liu, Xianjie
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Ytors Fysik och Kemi. Linköpings universitet, Tekniska fakulteten.
    Tao, Youtian
    Nanjing Tech Univ, Peoples R China.
    Liu, Jun-Ming
    Nanjing Univ, Peoples R China.
    Huang, Wei
    Nanjing Tech Univ, Peoples R China.
    Fahlman, Mats
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Ytors Fysik och Kemi. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Sum, Tze Chien
    Nanyang Technol Univ, Singapore.
    Gao, Feng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Biomolekylär och Organisk Elektronik. Linköpings universitet, Tekniska fakulteten.
    Long Electron-Hole Diffusion Length in High-Quality Lead-Free Double Perovskite Films2018Ingår i: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 30, nr 20, artikel-id 1706246Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Developing environmentally friendly perovskites has become important in solving the toxicity issue of lead-based perovskite solar cells. Here, the first double perovskite (Cs2AgBiBr6) solar cells using the planar structure are demonstrated. The prepared Cs2AgBiBr6 films are composed of high-crystal-quality grains with diameters equal to the film thickness, thus minimizing the grain boundary length and the carrier recombination. These high-quality double perovskite films show long electron-hole diffusion lengths greater than 100 nm, enabling the fabrication of planar structure double perovskite solar cells. The resulting solar cells based on planar TiO2 exhibit an average power conversion efficiency over 1%. This work represents an important step forward toward the realization of environmentally friendly solar cells and also has important implications for the applications of double perovskites in other optoelectronic devices.

  • 42.
    Lai, Chung-Chuan
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Tao, Quanzheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Fashandi, Hossein
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Wiedwald, Ulf
    Univ Duisburg Essen, Germany; Natl Univ Sci and Technol MISIS, Russia.
    Salikhov, Ruslan
    Univ Duisburg Essen, Germany.
    Farle, Michael
    Univ Duisburg Essen, Germany; Immanuel Kant Balt Fed Univ, Russia.
    Petruhins, Andrejs
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Eklund, Per
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Magnetic properties and structural characterization of layered (Cr0.5Mn0.5)(2)AuC synthesized by thermally induced substitutional reaction in (Cr0.5Mn0.5)(2)GaC2018Ingår i: APL MATERIALS, ISSN 2166-532X, Vol. 6, nr 2, artikel-id 026104Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The magnetic properties of the new phase (Cr0.5Mn0.5)(2)AuC are compared to the known MAX-phase (Cr0.5Mn0.5)(2)GaC, where the former was synthesized by thermally induced substitution reaction of Au for Ga in (Cr0.5Mn0.5)(2)GaC. The reaction introduced a lattice expansion of similar to 3% along the c-axis, an enhancement of the coercive field from 30 mT to 140 mT, and a reduction of the Curie temperature and the saturation magnetization. Still, (Cr0.5Mn0.5)(2)AuC displays similar features in the magnetic field-and temperature-dependent magnetization curves as previously reported magnetic MAX phases, e.g., (Cr0.5Mn0.5)(2)GaC and (Mo0.5Mn0.5)(2)GaC. Thework suggests a pathway for tuning the magnetic properties of MAX phases. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.

  • 43.
    Kota, Sankalp
    et al.
    Drexel Univ, PA 19104 USA.
    Wang, Wenzhen
    Drexel Univ, PA 19104 USA.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Natu, Varun
    Drexel Univ, PA 19104 USA.
    Opagiste, Christine
    Univ Grenoble Alpes, France.
    Ying, Guobing
    Drexel Univ, PA 19104 USA.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    May, Steven J.
    Drexel Univ, PA 19104 USA.
    Barsoum, Michel W.
    Drexel Univ, PA 19104 USA.
    Magnetic properties of Cr2AlB2, Cr3AlB4, and CrB powders2018Ingår i: Journal of Alloys and Compounds, ISSN 0925-8388, E-ISSN 1873-4669, Vol. 767, s. 474-482Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The MAB phases are ternary, atomically laminated compounds that crystallize with orthorhombic structures and consist of transition metal (M) boride sublattices interleaved with single or double layers of Al. To date, the magnetic properties of ferromagnetic Fe(2)AIB(2) have been well-studied experimentally, but those of most end member MAB phases with other transition metals remain poorly understood. Herein, predominantly single-phase Cr(3)AIB(4) and Cr(2)AIB(2) powders, with minor amounts of CrB impurities, were synthesized by heating mixtures of chromium monoboride (CrB), aluminum (Al), and boron or CrB and Al under flowing Ar. These reactants were found to substantially suppress the formation of undesired phases in the Cr-Al-B system. The magnetic properties of Cr(3)AIB(4), Cr(2)AIB(2) and CrB powders were characterized. All compounds exhibit paramagnetic behavior down to 4 K, with susceptibilities that are quite weakly temperature dependent at higher temperatures and a Curie-Weiss-like component prominent at low temperatures. Magnetization isotherms of the three compounds, showed approximately linear behavior above 5 kOe and no saturation of the magnetic moment up to 40 kOe, which is consistent with paramagnetism. The magnitude of the magnetic moments showed little variation with composition, on a per Cr atom basis. While the exact nature of the Curie-Weiss component is not entirely clear, we tentatively attribute it to dilute extrinsic impurities. (C) 2018 Elsevier B.V. All rights reserved.

  • 44.
    Flores-Ruiz, F. J.
    et al.
    CONACYT-Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Post. J-48, Puebla, Pue, Mexico.
    Tucker, Mark
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska högskolan.
    Bakoglidis, Konstantinos
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. School of Materials, Faculty of Science and Engineering, The University of Manchester, Manchester, United Kingdom.
    Yu, X.
    Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA, USA.
    Gellman, A. J.
    Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, PA, USA.
    Herrera-Gomez, A.
    CINVESTAV-Unidad Queretaro, Queretaro, Qro, Mexico.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Broitman, Esteban
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten. SKF Research & Technology Development Center, Nieuwegein, Netherlands.
    Micro-tribological performance of fullerene-like carbon and carbon-nitride surfaces2018Ingår i: Tribology International, ISSN 0301-679X, E-ISSN 1879-2464, Vol. 128, s. 104-112Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We studied the microtribological behavior of amorphous and fullerene-like (FL) carbon and carbon-nitride coatings deposited by filtered-cathodic-arc. All films show similar friction coefficients but different wear mechanisms. The FL films exhibit a surface swelling with the formation of a layer that thickens during the test, limiting wear and maintaining a low friction. X-ray photoelectron spectroscopy on worn FL film surfaces show an increase in the sp(2)-content, indicating that the lubricious layer generated by the wear process is probably the result of re-hybridization due to plasticity induced by localized shear. In contrast, the wear results of the amorphous films, involving tribomechanical and tribochemical surface phenomena, show that the surface layer formed during sliding is a precursor to the onset of wear.

  • 45.
    Dahlqvist, Martin
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Petruhins, Andrejs
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Origin of Chemically Ordered Atomic Laminates (i-MAX): Expanding the Elemental Space by a Theoretical/Experimental Approach2018Ingår i: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 12, nr 8, s. 7761-7770Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    With increased chemical diversity and structural complexity comes the opportunities for innovative materials possessing advantageous properties. Herein, we combine predictive first-principles calculations with experimental synthesis, to explore the origin of formation of the atomically laminated i-MAX phases. By probing (Mo2/3M1/32)(2)AC (where M-2 = Sc, Y and A = Al, Ga, In, Si, Ge, In), we predict seven stable i-MAX phases, five of which should have a retained stability at high temperatures. (Mo2/3Sc1/3)(2)GaC and (Mo2/3Y1/3)(2)GaC were experimentally verified, displaying the characteristic in-plane chemical order of Mo and Sc/Y and Kagome-like ordering of the A-element. We suggest that the formation of i-MAX phases requires a significantly different size of the two metals, and a preferable smaller size of the A-element. Furthermore, the population of antibonding orbitals should be minimized, which for the metals herein (Mo and Sc/Y) means that A elements from Group 13 (Al, Ga, In) are favored over Group 14 (Si, Ge, Sn). Using these guidelines, we foresee a widening of elemental space for the family of i-MAX phases and expect more phases to be synthesized, which will realize useful properties. Furthermore, based on i-MAX phases as parent materials for 2D MXenes, we also expect that the range of MXene compositions will be expanded.

  • 46.
    Tao, Quanzheng
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Ouisse, T.
    Univ Grenoble Alpes, France.
    Pinek, D.
    Univ Grenoble Alpes, France.
    Chaix-Pluchery, O.
    Univ Grenoble Alpes, France.
    Wilhelm, F.
    ESRF, France.
    Rogalev, A.
    ESRF, France.
    Opagiste, C.
    Univ Grenoble Alpes, France.
    Jouffret, L.
    Inst Chim Clermont Ferrand, France.
    Champagne, A.
    UCLouvain, Belgium.
    Charlier, J-C
    UCLouvain, Belgium.
    Lu, Jun
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Barsoum, M. W.
    Drexel Univ, PA 19104 USA.
    Rosén, Johanna
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Rare-earth (RE) nanolaminates Mo4RE4Al7C3 featuring ferromagnetism and mixed-valence states2018Ingår i: PHYSICAL REVIEW MATERIALS, ISSN 2475-9953, Vol. 2, nr 11, artikel-id 114401Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Rare-earth-based (RE) nanolaminates have attracted attention recently because of their complicated magnetism and their potential as precursors for strongly correlated two-dimensional materials. In this work, we synthesized a class of nanolaminates with a Mo4RE4Al7C3 chemistry, where RE = Ce or Pr. Powder samples of both phases were characterized with respect to structure and composition. Single crystals of Mo4Ce4Al7C3 were used for magnetization measurements. The crystal structure was investigated by means of x-ray diffraction and scanning transmission electron microscopy. Magnetization analysis reveals a ferromagnetic ground state with a Curie temperature of similar to 10.5 K. X-ray absorption near-edge structure provides experimental evidence that Ce is in a mixed-valence state. X-ray magnetic circular dichroism shows that only the Ce atoms with 4f(1) configuration occupying one of the two possible sites are ferromagnetically coupled, with a saturation moment of similar to 1.2 mu(B) per atom. We thus classify Mo4Ce4Al7C3 as a ferromagnetic, mixed-valence compound.

  • 47.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Primetzhofer, D.
    Uppsala Univ, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefacts2018Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 436, s. 102-110Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report x-ray photoelectron spectroscopy (XPS) core level binding energies (BEs) for the widely-applicable groups IVb-VIb transition metal carbides (TMCs) TiC, VC, CrC, ZrC, NbC, MoC, HfC, TaC, and WC. Thin film samples are grown in the same deposition system, by dc magnetron co-sputtering from graphite and respective elemental metal targets in Ar atmosphere. To remove surface contaminations resulting from exposure to air during sample transfer from the growth chamber into the XPS system, layers are either (i) Ar+ ion-etched or (ii) UHV-annealed in situ prior to XPS analyses. High resolution XPS spectra reveal that even gentle etching affects the shape of core level signals, as well as BE values, which are systematically offset by 0.2-0.5 eV towards lower BE. These destructive effects of Ar+ ion etch become more pronounced with increasing the metal atom mass due to an increasing carbon-to-metal sputter yield ratio. Systematic analysis reveals that for each row in the periodic table (3d, 4d, and 5d) C 1s BE increases from left to right indicative of a decreased charge transfer from TM to C atoms, hence bond weakening. Moreover, C 1s BE decreases linearly with increasing carbide/metal melting point ratio. Spectra reported here, acquired from a consistent set of samples in the same instrument, should serve as a reference for true deconvolution of complex XPS cases, including multinary carbides, nitrides, and carbonitrides. (C) 2017 Elsevier B.V. All rights reserved.

  • 48.
    Greczynski, Grzegorz
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Reliable determination of chemical state in x-ray photoelectron spectroscopy based on sample-work-function referencing to adventitious carbon: Resolving the myth of apparent constant binding energy of the C 1s peak2018Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 451, s. 99-103Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The accuracy of chemical-state determination by x-ray photoelectron spectroscopy (XPS) used in contemporary advanced materials research relies on a trustworthy binding energy (BE) referencing method. The C 1s peak corresponding to C-C/C-H bonds of adventitious carbon (AdC), present on a majority of air-exposed samples, is most commonly employed for this purpose, irrespective of whether samples are electrically conducting or not. Contrary to conventional practice, which takes the BE of C 1s peak of AdC as a constant, we find that the C 1s peak position E-B(F) varies over an alarmingly large range, from 284.08 to 286.74 eV, depending on the substrate, for nearly a hundred predominantly thin-film samples comprising metals, nitrides, carbides, borides, oxides, and oxynitrides. Our consistent measurements also show that, independent of materials system, E-B(F) of the C 1s peak is closely correlated to the sample work function phi(SA),such that the sum E-B(F) thorn /SA is constant, indicating that the electronic levels of the AdC layer align to the vacuum level, rather than to the Fermi level as commonly assumed. This phenomenon can be understood given that the AdC layer is not an inherent part of the analyzed sample and that the interaction to the substrate is weak, showing in that a common Fermi level is not established at the interface. Thus, a straightforward complementary measurement of /SA enables using the C 1s peak of AdC for the purpose of BE-scale calibration for samples exhibiting decent electrical conductivity. This new practice resolves problems associated with the conventional method and allows for more reliable bonding assignments. It is thus advisable that both ASTM and ISO XPS referencing guides relying on the use of AdC should be reviewed. (C) 2018 Elsevier B.V. All rights reserved.

    Publikationen är tillgänglig i fulltext från 2020-04-27 17:09
  • 49.
    Engberg, David
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Johnson, Lars J. S.
    Sandvik Coromant, Stockholm, Sweden.
    Jensen, Jens
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Thuvander, Mattias
    Department of Applied Physics, Chalmers University of Technology, Göteborg, Sweden.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Resolving Mass Spectral Overlaps in Atom Probe Tomography by Isotopic Substitutions: Case of TiSi15N2018Ingår i: Ultramicroscopy, ISSN 0304-3991, E-ISSN 1879-2723, Vol. 184, s. 51-60Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Mass spectral overlaps in atom probe tomography (APT) analyses of complex compounds typically limit the identification of elements and microstructural analysis of a material. This study concerns the TiSiN system, chosen because of severe mass-to-charge-state ratio overlaps of the 14N+ and 28Si2+ peaks as well as the 14N and 28Si2+ peaks. By substituting 14N with 15N, mass spectrum peaks generated by ions composed of one or more N atoms will be shifted toward higher mass-to-charge-state ratios, thereby enabling the separation of N from the predominant Si isotope. We thus resolve thermodynamically driven Si segregation on the nanometer scale in cubic phase Ti1-xSix15N thin films for Si contents 0.08 ≤ x ≤ 0.19 by APT, as corroborated by transmission electron microscopy. The APT analysis yields a composition determination that is in good agreement with energy dispersive X-ray spectroscopy and elastic recoil detection analyses. Additionally, a method for determining good voxel sizes for visualizing small-scale fluctuations is presented and demonstrated for the TiSiN system.

  • 50.
    Fallqvist, Amie
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Institutionen för teknik och naturvetenskap. Linköpings universitet, Tekniska fakulteten.
    Olovsson, Weine
    Linköpings universitet, Nationellt superdatorcentrum (NSC). Linköpings universitet, Tekniska fakulteten.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Max Planck Inst Eisenforsch GmbH, Germany.
    Palisaitis, Justinas
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Belov, M. P.
    Natl Univ Sci and Technol MISIS, Russia.
    Abrikosov, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Hultman, Lars
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Persson, Per O A
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Resolving the debated atomic structure of the metastable cubic SiNx tissue phase in nanocomposites with TiN2018Ingår i: Physical Review Materials, ISSN 2475-9953, Vol. 2, nr 9, artikel-id 093608Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The TiN/SiNx nanocomposite and nanolaminate systems are the archetype for super if not ultrahard materials. Yet, the nature of the SiNx tissue phase is debated. Here, we show by atomically resolved electron microscopy methods that SiNx is epitaxially stabilized in a NaCl structure on the adjacent TiN(001) surfaces. Additionally, electron energy loss spectroscopy, supported by first-principles density functional theory calculations infer that SiNx hosts Si vacancies.

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