Artificial superlattices exhibit exceptional electronic, magnetic, optical, and mechanical properties which make them unique candidates for applications in a broad range of technologies. A common key feature of superlattices is the need for atomically abrupt interfaces. However, superlattices comprised of materials with different properties, such as melting points and diffusivities, pose large challenges for achieving high crystal quality of both constituents with abrupt interfaces. By employing ion-assisted magnetron sputter epitaxy, we present an innovative solution to this problem with utilizing a unique combination of thermal radiation and kinetic energy that enable sufficient adatom mobility for epitaxial growth of both materials. The research was implemented for the case of CrB2/TiB2 heteroepitaxial superlattices, as neutron interference mirrors, wherein the constituents’ melting points differ by 1100 K. Ion-induced intermixing was avoided by commencing growth of each TiB2 and CrB2 layer by up to 3 unit cells (uc) without ion assistance, forming a buffer to protect the interface during the ion-assisted growth of the remainder of each layer. Heteroepitaxial superlattice growth with interface widths σCrB2 ∼1 uc and σTiB2 ∼2 uc was confirmed for different modulation periods. More than 3000 uc (∼1 µm) thick superlattices with abrupt interfaces were demonstrated for neutron mirror applications.

Tantalum nitride (Ta3N5) is a promising semiconductor for solar-driven photoelectrochemical (PEC) water splitting, but its performance is limited by intrinsic defects. Here, we investigate the effect of titanium (Ti) doping (0–10 at%) on the structural, compositional, and optoelectronic properties of Ta3N5 thin films. At low concentrations (<2 at%), Ti4+ preferentially substitutes Ta at four-coordinated sites, enhancing nitrogen incorporation and suppressing defect states associated with under-coordinated Ta. This leads to improved carrier dynamics and prolonged electron–hole lifetimes. Higher doping levels (≥3.5 at%) result in occupation of three-coordinated sites, inducing increase in the oxygen content, lattice distortion, and defect formation that deteriorate carrier lifetimes. PEC measurements reveal that optimized Ti doping significantly reduces charge transfer resistance and nearly seven-fold increase in the photocurrent. These findings underscore the importance of controlled Ti doping for defect engineering and band structure tuning to boost the PEC performance of Ta3N5 thin films.

Semiconductor devices are constructed from stacks of materials with different electrical properties, making deposition of thin layers central in producing semiconductor chips. The shrinking of electronics has resulted in complex device architectures which require deposition into holes and recessed features. A key parameter for such deposition is the step coverage (SC), which is the ratio of the thickness of material at the bottom and at the top. Here, we show that adding a co-flow of a heavy inert gas affords a higher SC for deposition by chemical vapor deposition (CVD). By adding a co-flow of Xe to a CVD process for boron carbide using a single source precursor with a lower molecular mass than the atomic mass of Xe, the SC increased from 0.71 to 0.97 in a 10:1 aspect ratio feature. The concept was further validated by a longer deposition depth in lateral high aspect ratio structures. We suggest that competitive co-diffusion is a general route to conformal CVD.

The self-induced formation of core-shell InAlN nanorods (NRs) is addressed at the mesoscopic scale by density functional theory (DFT)-resulting parameters to develop phase field modeling (PFM). Accounting for the structural, bonding, and electronic features of immiscible semiconductor systems at the nanometer scale, we advance DFT-based procedures for computation of the parameters necessary for PFM simulation runs, namely, interfacial energies and diffusion coefficients. The developed DFT procedures conform to experimental self-induced InAlN NRs' concerning phase-separation, core/shell interface, morphology, and composition. Finally, we infer the prospects for the transferability of the coupled DFT-PFM simulation approach to a wider range of nanostructured semiconductor materials.

Currently, self-induced InAlN core-shell nanorods enjoy an advanced stage of accumulation of experimental data from their growth and characterization as well as a comprehensive understanding of their formation mechanism by the ab initio modeling based on Synthetic Growth Concept. However, their electronic and optical properties, on which most of their foreseen applications are expected to depend, have not been investigated comprehensively. GW and the Bethe-Salpeter equation (BSE) are regarded as the state-of-the-art ab initio methodologies to study these properties. However, one of the major drawbacks of these methods is the computational cost, much higher than density-functional theory (DFT). Therefore, in many applications, it is highly desirable to answer the question of how well approaches based on DFT, such as e.g. the local density approximation (LDA), LDA-1/2, the modified Becke-Johnson (mBJ) and the Heyd-Scuseria-Ernzerhof (HSE06) functionals, can be employed to calculate electronic and optical properties with reasonable accuracy. In the present paper, we address this question, investigating how effective the DFT-based methodologies LDA, LDA-1/2, mBJ and HSE06 can be used as approximate tools in studies of the electronic and optical properties of scaled down models of core-shell InAlN nanorods, thus, avoiding GW and BSE calculations.

Single-crystal CrB₂/TiB₂ diboride superlattices with well-defined layers are promising candidates for neutron optics. However, excess B in sputter-deposited TiB_y using a single TiB₂ target deteriorates the structural quality of CrB_x/TiB_y (0001) superlattices. We study the influence of co-sputtering of TiB₂ + Ti on the stoichiometry and crystalline quality of 300-nm-thick TiB_y single layers and CrB_x/TiB_y (0001) superlattices on Al₂O₃(0001) substrates grown by DC magnetron sputter epitaxy at growth-temperatures T_S ranging from 600 to 900 °C. By controlling the relative applied powers to the TiB₂ and Ti magnetrons, y could be reduced from 3.3 to 0.9. TiB_2.3 grown at 750 °C exhibited epitaxial domains about 10x larger than non-co-sputtered films. Close-to-stoichiometry CrB_1.7/TiB_2.3 superlattices with modulation periods Λ = 6 nm grown at 750 °C showed the highest single crystal quality and best layer definition. TiB_2.3 layers display rough top interfaces indicating kinetically limited growth while CrB_1.7 forms flat and abrupt top interfaces indicating epitaxial growth with high adatom mobility.

Cu2O has emerged as a promising material for sustainable hydrogen production through photoelectrochemical (PEC) water splitting, while inefficient charge separation remains one of the main challenges hindering its development. In this work, a new architecture of InAlN/Cu2O heterojunction photocathode is demonstrated by combining n-type InAlN and p-type Cu2O to improve the charge separation efficiency, thus enhancing PEC water-splitting performance. The Pt/InAlN/Cu2O photoelectrode exhibits a photocurrent density of 2.54 mA cm(-2) at 0 V versus reversible hydrogen electrode (V-RHE), which is 3.21 times higher than that of Cu2O (0.79 mA cm(-2) at V-RHE). The enhanced PEC performance is explained by the larger built-in potential V-bi of 1.43 V formed at the InAlN/Cu2O p-n junction than that in the single Cu2O photocathode (V-bi &lt; 0.77 V), which improves the separation of the photogenerated carriers and thus relieves the bottlenecks of charge-transfer kinetics at the electrode bulk and electrode/electrolyte interface. In this work, an avenue is opened for designing III-nitrides/Cu2O heterojunction toward solar energy conversion.

Ga2O3 is a promising ultrawide-bandgap semiconductor for high-voltage and high-power applications, yet achieving reliable p-type electrical conductivity remains a significant challenge. We utilized halide vapor phase epitaxy growth to synthesize epitaxial layers of beta-phase Ga2O3 doped with Zn, which can serve as a suitable acceptor. Thin-film samples with Zn doping concentrations of 1.7 x 1019 and 2.5 x 1020 ions/cm3 were confirmed as single phases of monoclinic beta-Ga2O3 by X-ray diffraction. To determine the location of Zn ions within the beta-Ga2O3 lattice, we employed X-ray absorption near-edge structure (XANES) in conjunction with first-principles density functional theory calculations. Theoretical XANES spectra for Zn substitutions in the tetrahedral and octahedral Ga sites in beta-Ga2O3, as well as a precipitation of ZnGa2O4 spinel, were compared with the experimental data. The experimental XANES spectra of the Zn L 3 edge were reproduced well by theoretical spectra of Zn ions occupied at cationic positions at the tetrahedral coordinated site.

Sputter-deposited titanium diborides are promising candidates for protective coatings in harsh and extreme conditions. However, growing these layers from TiB₂ diboride targets by DC magnetron sputtering usually leads to over-stoichiometric layers with low crystal qualities. Moreover, superlattices with TiB₂ as one of the constituents have been becoming popular, owing to their superior mechanical properties compared to single layer constituents in addition to their use in other applications such as neutron optics. Here, we propose the use of a TiB (Ti:B = 1:1) sputtering target in an on-axis deposition geometry and demonstrate the growth of epitaxial sub-stoichiometric TiB_1.8 thin films. Furthermore, we present the growth of CrB_1.7/TiB_1.8 superlattices, from TiB (Ti:B = 1:1) and stoichiometric CrB₂ targets, with abrupt interfaces as promising materials system for neutron interference mirrors. The high crystal quality structure with well-defined interfaces is the common feature of superlattices which, regardless of application, should be addressed during the growth process.

Utilizing TiB target, all films crystallize in the hexagonal AlB₂ structure. The sub-stoichiometry of the TiB_1.8 films was accompanied by the presence of planar defects embedded in the films. CrB_1.7/TiB_1.8 superlattices exhibited a homogeneous boron distribution within the layers with no sign of B-rich tissue phases through the layers. This study demonstrates the feasibility for TiB as sputter target material, that offers a solution for deposition of TiB₂-based superlattices without the need to adjust the deposition parameters. Such adjustments would otherwise be unavoidable for tuning the TiB2 composition and could affect the growth of the other constituent materials.

The hardness and fracture toughness of high-temperature wear-resistant transition metal aluminum nitride multilayer films depend largely on the constituting layer ' s structure, compositional modulation, morphology, and interface coherency. We present a study on 1-micron thick multilayered films consisting of stacked layers of TiN and Zr 0.37 Al 0.63 N 1.09 , each layer being 10 nm thick. The films were grown using ion-assisted reactive magnetron sputtering on MgO(001) and Si(001) at substrate temperatures ranging from ambient to 900 degrees C. By increasing growth temperature, we found that the ZrAlN layers transition from near amorphous to nanocrystalline wurtzite to decomposed c-ZrN and w-AlN domains. Concurrently, the TiN layers exhibit strong fiber texture, polycrystallinity, and epitaxial growth carried by the ZrN domains. Both hardness and fracture stress, evaluated by nanoindentation and micromechanical tests, increase with temperature from H=24 GPa M g O , 23 GPa Si to 36 GPa M g O , 30 GPa Si , and sigma F Si = 6.1-7.7 GPa, respectively. An improved fracture toughness of K IC =2.4-2.8 MPa root m is related to different toughening mechanisms for the various microstructures. The difference in hardness between the substrates is related to compressive stress due to the deposition conditions and thermal contraction. The superior fracture stress is attributed to dense multilayers, free from macroscopic defects due to ion-assisted growth. After being deposited at 200 degrees C, the multilayers remained thermally stable when vacuum annealed for 15 hours at 900 degrees C, with no significant change in phase composition or hardness. The improved hardness, toughness, and temperature stability of the otherwise brittle nitrides are promising for industrial applications.