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2000 (English)In: Journal of microelectromechanical systems, ISSN 1057-7157, E-ISSN 1941-0158, Vol. 9, no 3, p. 303-308Article in journal (Refereed) Published
Abstract [en]
This paper reports on the design, fabrication, and characterization of the first low-power consumption MOSFET gas sensor. The novel MOSFET array gas sensor has been fabricated using anisotropic bulk silicon micromachining. A heating resistor, a diode used as temperature sensor, and four MOSFETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and, therefore, thermally isolates the electronic components from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 90 mW for an array of four MOSFETs at an operating temperature of 170 °C. Three of the MOSFETs have their gate covered with thin catalytic metals and are used as gas sensors. The fourth one has a standard gate covered with nitride and could act as a reference. The sensor was tested under different gaseous atmospheres and has shown good gas sensitivities to hydrogen and ammonia. The low-power MOSFET array gas sensor presented is suitable for applications in portable gas sensor instruments, electronic noses, and automobiles.
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-47591 (URN)10.1109/84.870055 (DOI)
2009-10-112009-10-112017-12-13