Achieving large two-dimensional (2D) sheets of any metal is challenging due to their tendency to coalescence or cluster into 3D shapes. Recently, single-atom-thick gold sheets, termed goldene, was reported. Here, we ask if goldene can be extended to include multiple layers. The answer is yes, and trilayer goldene is the magic number, for reasons of electronegativity. Experiments are made to synthesize the atomically laminated phase Ti4Au3C3 through substitutional intercalation of Si layers in Ti4SiC3 for Au. Density functional theory calculations suggest that it is energetically favorable to insert three layers of Au into Ti4SiC3, compared to inserting a monolayer, a bilayer, or more than three layers. Isolated trilayer goldene sheets, ~100 nanometers wide and 6.7 angstroms thick, were obtained by chemically etching the Ti4C3 layers from Ti4Au3C3 templates. Furthermore, trilayer goldene is found in both hcp and fcc forms, where the hcp is ~50 milli–electron volts per atom more stable at room temperature from ab initio molecular dynamic simulations.

Lowering energy consumption during thin film growth by magnetron sputtering techniques is essential for future industry as a step towards reaching the United Nations (UN) sustainable development goals. Large potential for energy savings has been shown by employing high-mass metal ion irradiation from targets operated in highpower impulse magnetron sputtering (HiPIMS) mode. With this approach, demonstrated for transition metal (TM) nitrides, thermally-induced adatom mobility is replaced with that supplied by overlapping collisions cascades of low-energy recoils, resulting in a strong reduction of the necessary external heating. Here, the novel method is tested for TiBx, which is a model system for TM-based diborides, another class of promising materials to be used as protective coatings for cutting tools. We show that such films grown with no external substrate heating develop porosity over a wide range of B/Ti ratios. However, (Ti1-yWy)Bx films grown by the hybrid W2B5-HiPIMS/Ti-TiB2-DCMS co-sputtering with substrate bias synchronized to W+/W2+-rich ion fluxes, are dense (without porosity), irrespective of x. Nanoindentation hardness increases from 20 GPa for TiBx to 40 GPa for (Ti1-yWy)Bx. The slightly understoichiometric (Ti0.86W0.14)B1.91 film exhibits super-hardness and is nearly stress-free. These results prove that selected heavy ion irradiation is beneficial for low-temperature growth of hard diboride films, which demonstrates the versatility of this approach and calls for evaluation in other material systems.

Altered and gangue quartz in hydrothermal veins from the Kubi Gold deposit in Dunkwa on Offin in the central region of Ghana are investigated for possible Au-associated indicator minerals and to provide the understanding and increase the knowledge of the mineral hosting and alteration processes in quartz. X-ray diffraction, air annealing furnace, differential scanning calorimetry, energy dispersive X-ray spectroscopy, and transmission electron microscopy have been applied on different quartz types outcropping from surface and bedrocks at the Kubi Gold Mining to reveal the material properties at different temperatures. From the diffraction results of the fresh and annealed quartz samples, we find that the samples contain indicator and the impurity minerals iron disulfide, biotite, titanium oxide, and magnetite. These minerals, under oxidation process between 574 and 1400 °C temperatures experienced hematite alterations and a transformation from α-quartz to β-quartz and further to cristobalite as observed from the calorimetry scans for hydrothermally exposed materials. The energy dispersive spectroscopy revealed elemental components of Fe, S, Mg, K, Al, Ti, Na, Si, O, and Ca contained in the samples, and these are attributed to the impurity phase minerals observed in the diffraction. The findings also suggest that during the hydrothermal flow regime, impurity minerals and metals can be trapped by voids and faults. Under favorable temperature conditions, the trapped minerals can be altered to change color at different depositional stages by oxidation and reduction processes leading to hematite alteration which is a useful indicator minerals in mineral exploration.

The synthesis of monolayer gold has so far been limited to free-standingseveral-atoms-thick layers, or monolayers confned on or inside templates.Here we report the exfoliation of single-atom-thick gold achieved throughwet-chemically etching away Ti3C2 from nanolaminated Ti3AuC2, initiallyformed by substituting Si in Ti3SiC2 with Au. Ti3SiC2 is a renown MAX phase,where M is a transition metal, A is a group A element, and X is C or N. Ourdeveloped synthetic route is by a facile, scalable and hydrofuoric acid-freemethod. The two-dimensional layers are termed goldene. Goldene layerswith roughly 9% lattice contraction compared to bulk gold are observedby electron microscopy. While ab initio molecular dynamics simulationsshow that two-dimensional goldene is inherently stable, experiments showsome curling and agglomeration, which can be mitigated by surfactants.X-ray photoelectron spectroscopy reveals an Au 4f binding energy increaseof 0.88 eV. Prospects for preparing goldene from other non-van der WaalsAu-intercalated phases, including developing etching schemes,are presented.

Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local comelting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

Controllable engineering of the nanoporosity in layered Ca3Co4O9 remains a challenge. Here, we show the synthesis of discontinuous films with islands of highly textured Ca3Co4O9, effectively constituting distributed nanoparticles with controlled porosity and morphology. These discontinuously dispersed textured Ca3Co4O9 nanoparticles may be a candidate for hybrid thermoelectrics.

There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti_0.67Hf_0.33B_1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB₂-HiPIMS/TiB₂-DCMS) in pure Ar on Al₂O₃(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf⁺) irradiation promoting the growth of dense Ti_0.67Hf_0.33B_1.7.

Refractory transition-metal (TM) diborides have high melting points, excellent hardness, and good  chemical  stability.  However, these properties are not sufficient for applications involving extreme  environments that require high mechanical strength as well as oxidation and corrosion resistance. Here, we study the effect of Cr addition on the properties of ZrB₂-rich Zr₁-_xCr_xB_y thin films grown by hybrid high-power impulse and dc magnetron co-sputtering (Cr-HiPIMS/ZrB₂-DCMS) with a 100-V Cr-metal-ion synchronized potential. Cr metal fraction, x = Cr/(Zr+Cr), is increased from 0.23 to 0.44 by decreasing the power P_zrb2 applied to the DCMS ZrB₂ target from 4000 to 2000 W, while the average power, pulse width, and frequency applied to the HiPIMS Cr target are maintained constant. In addition, y decreases from 2.18 to 1.11 as a function of P_zrb2, as a result of supplying Cr to the growing film and preferential B resputtering caused by the pulsed Cr-ion flux. ZrB_2.18, Zr_0.77Cr_0.23B_1.52, Zr_0.71Cr_0.29B_1.42, and Zr_0.68Cr_0.32B_1.38 2 films have hexagonal AlB₂ crystal structure with a columnar nanostructure, while Zr_0.64Cr_0.36B_1.30 and Zr_0.56Cr_0.44B_1.11 are  amorphous. All films show hardness above 30 GPa. Zr_0.56Cr_0.44B_1.11 alloys exhibit much better toughness, wear, oxidation, and corrosion resistance than ZrB_2.18. This combination of properties   makes Zr_0.56Cr_0.44B_1.11 ideal candidates for numerous strategic applications.

Guided by the theoretical prediction, a new MAX phase V2SnC was synthesized experimentally for the first time by reaction of V, Sn, and C mixtures at 1000 degrees C. The chemical composition and crystal structure of this new compound were identified by the cross-check combination of first-principles calculations, X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), and high resolution scanning transmission electron microscopy (HR-STEM). The stacking sequence of V2C and Sn layers results in a crystal structure of space group P6(3)/mmc. Thea- andc-lattice parameters, which were determined by the Rietveld analysis of powder XRD pattern, are 0.2981(0) nm and 1.3470(6) nm, respectively. The atomic positions are V at 4f (1/3, 2/3, 0.0776(5)), Sn at 2d (2/3, 1/3, 1/4), and C at 2a (0, 0, 0). A new set of XRD data of V2SnC was also obtained. Theoretical calculations suggest that this new compound is stable with negative formation energy and formation enthalpy, satisfied Born-Huang criteria of mechanical stability, and positive phonon branches over the Brillouin zone. It also has low shear deformation resistancec(44)(second-order elastic constant,c(ij)) and shear modulus (G), positive Cauchy pressure, and low Pughs ratio (G/B= 0.500 < 0.571), which is regarded as a quasi-ductile MAX phase. The mechanism underpinning the quasi-ductility is associated with the presence of a metallic bond.

The authors investigate sputtering of a Ti₃SiC₂ compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the influence of the sputtering power at 850 °C for the deposition of Ti₃SiC₂ films on Al₂O₃(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in the angular distribution between C, Si, and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at. % in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by x-ray photoelectron spectroscopy shows C–Ti and Si–C bonding in the Ti₃SiC₂ films and Si–Si bonding in the Ti₃SiC₂ compound target. X-ray diffraction reveals that the phases Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅ can be deposited from a Ti₃SiC₂ compound target at substrate temperatures above 850 °C and with the growth of TiC and the Nowotny phase Ti₅Si₃C_x at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅ on TiC at 970 °C. Four-point probe resistivity measurements give values in the range ∼120 to ∼450 μΩ cm and with the lowest values obtained for films containing Ti₃SiC₂, Ti₄SiC₃, and Ti₇Si₂C₅.