Low-current multilevel programmability with inherent non-volatility and high stability of resistance states is required for both multi-bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this work realizes >512 (>9 bits) distinct non-volatile conductance levels with stable retention for each state with current levels down to the nanoampere range, highly promising for potential integration with small processing nodes with ultra-low power consumption requirements. This is achieved by demonstrating a new thin film design concept that encompasses three key features: an ultra-thin epitaxial oxygen ionic switching layer that provides a tunable energy barrier at the bottom electrode, an overcoat amorphous layer that acts as an ion migration barrier for stable state retention, and a partial conductive filament as a localized electronic transport channel to the epitaxial switching layer. A large dynamic resistance range of up to seven orders of magnitude is achieved with reset-free transitions among intermediate states, and programmability is demonstrated with ultra-fast (20 ns) pulses. Artificial neural network (ANN) simulations, based on the experimental performance and its non-idealities, demonstrate close-to-ideal inference accuracies for various Modified National Institute of Standards and Technology (MNIST) data sets.

Lead-free halide double perovskites (HDPs) have emerged as a new generation of thermochromic materials. However, further materials development and mechanistic understanding are required. Here, a highly stable HDP Cs2NaFeCl6 single crystal is synthesized, and its remarkable and fully reversible thermochromism with a wide color variation from light-yellow to black over a temperature range of 10 to 423 K is investigated. First-principles, density functional theory (DFT)-based calculations indicate that the thermochromism in Cs2NaFeCl6 is an effect of electron–phonon coupling. The temperature sensitivity of the bandgap in Cs2NaFeCl6 is up to 2.52 meVK−1 based on the Varshni equation, which is significantly higher than that of lead halide perovskites and many conventional group-IV, III–V semiconductors. Meanwhile, this material shows excellent environmental, thermal, and thermochromic cycle stability. This work provides valuable insights into HDPs' thermochromism and sheds new light on developing efficient thermochromic materials.

A double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO3 and Nb2O5, which allows the reversible uptake of Na+ in the Nb2O5 layer. We demonstrate voltage-controlled interfacial barrier tuning via Na+ transfer, enabling conductivity modulation and spike-amplitude- and spike-timing-dependent plasticity. The neuromorphic behavior controlled by Na+ ion dynamics in biocompatible materials shows potential for future low-power sensing electronics and smart wearables with local processing.

MXenes have emerged as promising candidates for enhancing the properties of self-healable flexible strain sensors by serving as conductive fillers. Leveraging the rich functional surface of MXene nanosheets, this study focuses on the transformation of F-rich MXene to O-rich MXene and explores its impact on the mechanical and healing properties of partially crystallized polymeric hydrogels. Through a facile hot-alkali process with KOH, the F terminations are replaced by O and OH groups, dominated by the earlier. Incorporating KOH-treated O-rich MXene (k-MXene) into a partially crystallized polymer hydrogel matrix significantly improves mechanical properties even with a mere 1 wt % addition. The resulting tensile strength reaches 0.93 MPa, with a remarkable healing efficiency of 88.3%. Notably, k-MXene exhibits a higher healing efficiency compared to fluorine-terminated MXene (f-MXene) when incorporated in the polymer matrix. Furthermore, the dry annealing and swelling process alters the hydration interactions between the host and matrix allowing for a 4-fold increase in the electrical response to the same elongation compared to conventional hydrogels. These findings underscore the critical role of tuning surface chemistry of MXene nanosheets and tailoring hydration interactions between the nanofiller and matrix to enhance healing capabilities and electromechanical response. This work opens avenues for designing advanced self-healable flexible strain sensors with superior performance and functionality.

Tritantalum pentanitride (Ta₃N₅) semiconductor is a promising material for photoelectrolysis of water with high efficiency. Ta₃N₅ is a metastable phase in the complex system of TaN binary compounds. Growing stabilized single-crystal Ta₃N₅ films is correspondingly challenging. Here, we demonstrate the growth of a nearly single-crystal Ta₃N₅ film with epitaxial domains on c-plane sapphire substrate, Al₂O₃(0001), by magnetron sputter epitaxy. Introduction of a small amount ~2% of O₂ into the reactive sputtering gas mixed with N₂ and Ar facilitates the formation of a Ta₃N₅ phase in the film dominated by metallic TaN. In addition, we indicate that a single-phase polycrystalline Ta₃N₅ film can be obtained with the assistance of a Ta₂O₅ seed layer. With controlling thickness of the seed layer smaller than 10 nm and annealing at 1000 °C, a crystalline β phase Ta₂O₅ was formed, which promotes the domain epitaxial growth of Ta₃N₅ films on Al₂O₃(0001). The mechanism behind the stabilization of the orthorhombic Ta₃N₅ structure resides in its stacking with the ultrathin seed layer of orthorhombic β-Ta₂O₅, which is energetically beneficial and reduces the lattice mismatch with the substrate.

Although titanium nitride (TiN) is among the most extensively studied and thoroughly characterizedthin-film ceramic materials, detailed knowledge of relevant dislocation core structures is lacking. Byhigh-resolution scanning transmission electron microscopy (STEM) of epitaxial single crystal (001)-oriented TiN films, we identify different dislocation types and their core structures. These include, besidesthe expected primary a/2{110}h110i dislocation, Shockley partial dislocations a/6{111}h112i and sessileLomer edge dislocations a/2{100}h011i. Density-functional theory and classical interatomic potentialsimulations complement STEM observations by recovering the atomic structure of the different disloca-tion types, estimating Peierls stresses, and providing insights on the chemical bonding nature at the core.The generated models of the dislocation cores suggest locally enhanced metal–metal bonding, weakenedTi-N bonds, and N vacancy-pinning that effectively reduces the mobilities of {110}h110i and {111}h112idislocations. Our findings underscore that the presence of different dislocation types and their effects onchemical bonding should be considered in the design and interpretations of nanoscale and macroscopicproperties of TiN.

We systematically study the oxidation properties of sputter-deposited TiB2.5 coatings up to 700 °C. Oxide-scale thickness dox increases linearly with time ta for 300, 400, 500, and 700 °C, while an oxidation-protective behavior occurs with dox=250∙ta0.2 at 600 °C. Oxide-layer’s structure changes from amorphous to rutile/anatase-TiO2 at temperatures ≥ 500 °C. Abnormally low oxidation rate at 600 °C is attributed to a highly dense columnar TiO2-sublayer growing near oxide/film interface with a top-amorphous thin layer, suppressing oxygen diffusion. A model is proposed to explain the oxide-scale evolution at 600 °C. Decreasing heating rate to 1.0 °C/min plays a noticeable role in the TiB2.5 oxidation.

We recently showed that sputter-deposited Zr_1-xTa_xB_y thin films have hexagonal AlB₂-type columnar nanostructure in which column boundaries are B-rich for x < 0.2, while Ta-rich for x ≥ 0.2. As-deposited layers with x ≥ 0.2 exhibit higher hardness and, simultaneously, enhanced toughness. Here, we study the mechanical properties of ZrB_2.4, Zr_0.8Ta_0.2B_1.8, and Zr_0.7Ta_0.3B_1.5 films annealed in Ar atmosphere as a function of annealing temperature T_a up to 1200 °C. In-situ and ex-situ nanoindentation analyses reveal that all films undergo age hardening up to T_a = 800 °C, with the highest hardness achieved for Zr_0.8Ta_0.2B_1.8 (45.5±1.0 GPa). The age hardening, which occurs without any phase separation or decomposition, can be explained by point-defect recovery that enhances chemical bond density. Although hardness decreases at T_a > 800 °C due mainly to recrystallization, column coarsening, and planar defect annihilation, all layers show hardness values above 34 GPa over the entire T_a range.

There is a need for developing synthesis techniques that allow the growth of high-quality functional films at low substrate temperatures to minimize energy consumption and enable coating temperature-sensitive substrates. A typical shortcoming of conventional low-temperature growth strategies is insufficient atomic mobility, which leads to porous microstructures with impurity incorporation due to atmosphere exposure, and, in turn, poor mechanical properties. Here, we report the synthesis of dense Ti_0.67Hf_0.33B_1.7 thin films with a hardness of ∼41.0 GPa grown without external heating (substrate temperature below ∼100 °C) by hybrid high-power impulse and dc magnetron co-sputtering (HfB₂-HiPIMS/TiB₂-DCMS) in pure Ar on Al₂O₃(0001) substrates. A substrate bias potential of −300 V is synchronized to the target-ion-rich portion of each HiPIMS pulse. The limited atomic mobility inherent to such desired low-temperature deposition is compensated for by heavy-mass ion (Hf⁺) irradiation promoting the growth of dense Ti_0.67Hf_0.33B_1.7.

X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX) are applied to investigate the properties of fine-grained concentrates on artisanal, small-scale gold mining samples from the Kubi Gold Project of the Asante Gold Corporation near Dunwka-on-Offinin the Central Region of Ghana. Both techniques show that the Au-containing residual sediments are dominated by the host elements Fe, Ag, Al, N, O, Si, Hg, and Ti that either form alloys with gold or with inherent elements in the sediments. For comparison, a bulk nugget sample mainly consisting of Au forms an electrum, i.e., a solid solution with Ag. Untreated (impure) sediments, fine-grained Au concentrate, coarse-grained Au concentrate, and processed ore (Au bulk/nugget)samples were found to contain clusters of O, C, N, and Ag, with Au concentrations significantly lower than that of the related elements. This finding can be attributed to primary geochemical dispersion, which evolved from the crystallization of magma and hydrothermal liquids as well as the migration of metasomatic elements and the rapid rate of chemical weathering of lateralization in secondary processes. The results indicate that Si and Ag are strongly concomitant with Au because of their eutectic characteristics, while N, C, and O follow alongside because of their affinity to Si. These non-noble elements thus act as pathfinders for Au ores in the exploration area. This paper further discusses relationships between gold and sediments of auriferous lodes as key to determining indicator minerals of gold in mining sites.