Electron effective mass is a fundamental material parameter defining the free charge carrier transport properties, but it is very challenging to be experimentally determined at high temperatures relevant to device operation. In this work, we obtain the electron effective mass parameters in a Si-doped GaN bulk substrate and epitaxial layers from terahertz (THz) and mid-infrared (MIR) optical Hall effect (OHE) measurements in the temperature range of 38-340 K. The OHE data are analyzed using the well-accepted Drude model to account for the free charge carrier contributions. A strong temperature dependence of the electron effective mass parameter in both bulk and epitaxial GaN with values ranging from (0.18 +/- 0.02) m(0) to (0.34 +/- 0.01) m(0) at a low temperature (38 K) and room temperature, respectively, is obtained from the THz OHE analysis. The observed effective mass enhancement with temperature is evaluated and discussed in view of conduction band nonparabolicity, polaron effect, strain, and deviations from the classical Drude behavior. On the other hand, the electron effective mass parameter determined by MIR OHE is found to be temperature independent with a value of (0.200 +/- 0.002) m(0). A possible explanation for the different findings from THz OHE and MIR OHE is proposed. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)

Herein, the complex pseudodielectric function of Ge and Si from femtosecond pump–probe spectroscopic ellipsometry with 267, 400, and 800 nm pump–pulse wavelengths is analyzed by fitting analytical lineshapes to the second derivatives of the pseudodielectric function with respect to energy. This yields the critical point parameters (threshold energy, lifetime broadening, amplitude, and excitonic phase angle) of E 1 and E 1 + Δ 1 in Ge and E 1 in Si as functions of delay time. Coherent longitudinal acoustic phonon oscillations with a period of about 11 ps are observed in the transient critical point parameters of Ge. From the amplitude of these oscillations, the laser-induced strain is found to be on the order of 0.03% for Ge measured with the 800 nm pump pulse, which is in reasonable agreement with the strain calculated from theory. 

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of beta-Ga2O3. Epitaxial beta-Ga2O3 layers at high growth rates (above 1 mu m/h), at low reagent flows, and at reduced growth temperatures (740 degrees C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial beta-Ga2O3 layers are demonstrated with a 201 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) beta-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of beta-Ga2O3.

Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for the development of GaN homoepitaxy. We propose a new approach to grow high quality homoepitaxial GaN in N2-rich carrier gas and at a higher supersaturation as compared to heteroepitaxy. We develop a low temperature GaN as an optimum nucleation scheme based on the evolution and thermal stability of the GaN surface under different gas compositions and temperatures. Analysis in the framework of nucleation theory of homoepitaxial layers simultaneously grown on GaN templates on SiC and on hydride vapor phase epitaxy GaN substrates is presented. We show that residual strain and screw dislocation densities affect GaN nucleation and subsequent growth leading to distinctively different morphologies of GaN homoepitaxial layers grown on GaN templates and native substrates, respectively. The established comprehensive picture provides a guidance for designing strategies for growth conditions optimization in GaN homoepitaxy. GaN with atomically flat and smooth epilayer surfaces with a root-mean-square roughness value as low as 0.049 nm and low background carbon concentration of 5.3 x 1015 cm-3 has been achieved. It is also shown that there is no generation of additional dislocations during homoepitaxial growth. Thus, our results demonstrate the potential of the hot-wall MOCVD technique to deliver high-quality GaN material for vertical power devices.

We determine the composition dependence of the transverse and longitudinal optical infrared-active phonon modes in rhombohedral α-(AlxGa1−x)2O3 alloys by far-infrared and infrared generalized spectroscopic ellipsometry. Single-crystalline high quality undoped thin-films grown on m-plane oriented α-Al2O3 substrates with x = 0.18, 0.37, and 0.54 were investigated. A single mode behavior is observed for all phonon modes, i.e., their frequencies shift gradually between the equivalent phonon modes of the isostructural binary parent compounds. We also provide physical model line shape functions for the anisotropic dielectric functions. We use the anisotropic high-frequency dielectric constants for polarizations parallel and perpendicular to the lattice c axis measured recently by Hilfiker et al. [Appl. Phys. Lett. 119, 092103 (2021)], and we determine the anisotropic static dielectric constants using the Lyddane–Sachs–Teller relation. The static dielectric constants can be approximated by linear relationships between those of α-Ga2O3 and α-Al2O3. The optical phonon modes and static dielectric constants will become useful for device design and free charge carrier characterization using optical techniques. 

The dielectric function of Ge measured with static and time-resolved spectroscopic ellipsometry is analyzed using linear filtering techniques to investigate the temperature dependence of the direct band gap, as well as the temporal evolvement of critical points obtained from femtosecond pump-probe ellipsometry measurements.

The full transient dielectric-function (DF) tensor of ZnO after UV-laser excitation in the spectral range 1.4–3.6 eV is obtained by measuring an m-plane-oriented ZnO thin film with femtosecond (fs)-time-resolved spectroscopic ellipsometry. From the merits of the method, we can distinguish between changes in the real and the imaginary part of the DF as well as changes in birefringence and dichroism, respectively. We find pump-induced switching from positive to negative birefringence in almost the entire measured spectral range for about 1 ps. Simultaneously, weak dichroism in the spectral range below 3.0 eV hints at contributions of inter-valence-band transitions. Line-shape analysis of the DF above the band gap based on discrete exciton, exciton-continuum, and exciton-phonon-complex contributions shows a maximal dynamic increase in the transient exciton energy by 80 meV. The absorption coefficient below the band gap reveals an exponential line shape attributed to Urbach-rule absorption mediated by exciton–longitudinal-optic-phonon interaction. The transient DF is supported by first-principles calculations for 1020cm−3 excited electron-hole pairs in ideal bulk ZnO.

In this paper, the authors present the characterization experiments of a 20 fs vacuum ultraviolet beam from a high harmonic generation source. The beam hits a silicon sample and passes a triple reflection gold polarizer located inside an ultrahigh vacuum chamber. The polarizer’s Malus curve was obtained; the total acquisition time for each point of the curve was 30 s. This aims to be the first vacuum ultraviolet time-resolved user station dedicated to ellipsometry. The high harmonic beam is generated by a 12 mJ, 1 kHz, 20 fs, in-house-developed laser and detected by a back-illuminated charge-coupled device. 

ZnO and vanadium-doped ZnO (0.7–4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (λ = 248 nm). The films were deposited at 500 °C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm2. The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400–1200 nm. The electrical resistivity of the films drops from 8.2 10−3 to 1.3 10−3 Ω cm with an increase in the dopant concentration up to 0.9 at. % and then rises as the dopant level is increased further.

For polarization-resolved reflection experiments such as ellipsometry, not only is high reflectivity in a wide spectral range required for mirrors but also the quality of their polarization response is important. Furthermore, for VUV ellipsometry, optimal angles of incidence at the sample are between $$45^\circ $$ and $$60^\circ $$ with respect to the surface normal. In the best case, a setup should even allow variable angles. This requires reflective optics working at non-grazing incidence. In this theoretical study, a selection of potentially relevant materials and mirror designs for broadband use in the VUV is investigated. Based on the available tabulated databases of optical constants, we performed transfer-matrix calculations to obtain reflectance as well as polarization-response spectra in the desired VUV range up to 50 eV. From the variety of materials, we discuss metals that are otherwise commonly used at grazing incidence, Si, SiC, and as representatives for coating layers MgF$$_2$$, SiO$$_2$$, and Al$$_2$$O$$_3$$. While SiC is most universal, Si with only native oxide layer performs well especially below 25 eV. Aluminum has good properties but oxide layers are very detrimental, as protective coatings are in general.