Field Effect Based Gas Sensors, from Basic Mechanisms to the Latest Commercial Device Designs 2016 (engelsk)Inngår i: SENSORS AND ELECTRONIC INSTRUMENTATION ADVANCES (SEIA), INT FREQUENCY SENSOR ASSOC-IFSA , 2016, s. 19-21Konferansepaper, Publicerat paper (Fagfellevurdert)

Abstract [en]

This contribution treats the latest developments in the understanding of basic principles regarding device design, transduction mechanisms, gas-materials-interactions, and materials processing for the tailored design and fabrication of SiC FET gas sensor devices, mainly intended as products for the automotive sector.

sted, utgiver, år, opplag, sider

INT FREQUENCY SENSOR ASSOC-IFSA , 2016. s. 19-21

Emneord [en]

SiC; Field Effect Transistors; Gas sensors; Automotive; Emissions monitoring; Sensor product development

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Identifikatorer

URN: urn:nbn:se:liu:diva-141848ISI: 000411474200006ISBN: 978-84-608-9963-1 (tryckt)OAI: oai:DiVA.org:liu-141848DiVA, id: diva2:1147961

Konferanse

2nd International Conference on Sensors and Electronic Instrumentation Advances (SEIA)

Tilgjengelig fra: 2017-10-09 Laget: 2017-10-09 Sist oppdatert: 2025-02-18

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Andersson, MikeMöller, PeterFashandi, HosseinEriksson, JensPuglisi, DonatellaLloyd Spetz, Anita

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