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50-830 MHz noise and distortion canceling CMOS low noise amplifier
NED University of Engn and Technology, Pakistan.
United Arab Emirates University, U Arab Emirates.
Linköpings universitet, Tekniska fakulteten. Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial.
2018 (engelsk)Inngår i: Integration, ISSN 0167-9260, E-ISSN 1872-7522, Vol. 60, s. 63-73Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm(2). Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured 811 and S22 are better than -8.9 dB and -8.5 dB, respectively within the 0.05-1 GHz band. The 1-dB compression point is -11.5 dBm at 700 MHz, while the IIP3 is -6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.

sted, utgiver, år, opplag, sider
Elsevier, 2018. Vol. 60, s. 63-73
Emneord [en]
CMOS; Distortion; Feedback; FOM; Linearity; LNA; Noise; Wideband
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-143987DOI: 10.1016/j.vlsi.2017.07.006ISI: 000417777200007Scopus ID: 2-s2.0-85027240956OAI: oai:DiVA.org:liu-143987DiVA, id: diva2:1170229
Merknad

Funding Agencies|UAE University, Alain, UAE [31N157]

Tilgjengelig fra: 2018-01-02 Laget: 2018-01-02 Sist oppdatert: 2018-01-12bibliografisk kontrollert

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Wahab, Qamar-ul

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