Influence of co-sputtering AlB<sub>2</sub> to TaB<sub>2</sub> on stoichiometry of non-reactively sputtered boride thin filmsVise andre og tillknytning
2024 (engelsk)Inngår i: Materials Research Letters, E-ISSN 2166-3831, Vol. 12, nr 8, s. 561-570Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]
Transition metal diboride thin films are promising functional materials for their outstanding mechanical properties and thermal stability. By combining experiment and simulations, we discuss angular distribution of the sputtered species, their scattering in the gas phase, re-sputtering and potential evaporation from the grown films for the complex evolution of film compositions, as well as energetic preference for vacancy formation and competing phases as factors for governing the phase constitution. By co-sputtering from two compound targets, we developed phase-pure crystalline (Ta,Al)B2 solid solution thin films and correlate the stoichiometry changes with the evolution of their microstructure, hardness, and elastic modulus. {GRAPHICAL ABSTRACT}
sted, utgiver, år, opplag, sider
TAYLOR & FRANCIS INC , 2024. Vol. 12, nr 8, s. 561-570
Emneord [en]
Stoichiometry; diboride thin films; hardness; microstructure; Ab initio
HSV kategori
Identifikatorer
URN: urn:nbn:se:liu:diva-204279DOI: 10.1080/21663831.2024.2357700ISI: 001238511200001OAI: oai:DiVA.org:liu-204279DiVA, id: diva2:1867442
Merknad
Funding Agencies|Christian Doppler Laboratory for Surface Engineering of High-Performance Components, TU Wien, Austria
2024-06-102024-06-102024-06-10