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Cubic silicon carbide anode material for low-temperature solid oxide fuel cell
China Univ Geosci, Peoples R China; COMSATS Univ Islamabad, Pakistan.
China Univ Geosci, Peoples R China.
Univ Okara, Pakistan.
COMSATS Univ Islamabad, Pakistan.
Vise andre og tillknytning
2025 (engelsk)Inngår i: Journal of Solid State Electrochemistry, ISSN 1432-8488, E-ISSN 1433-0768, Vol. 29, nr 5, s. 1777-1785Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

Cubic silicon carbide (3C-SiC) synthesized with different methods was investigated as the anode material of low-temperature solid ceramic fuel cells because of high electron mobility, excellent thermal and mechanical stability, and high electrochemical reactivity towards redox-based reactions as well as low leakage current. The sample prepared via the carbothermal reduction method has multiple phases of cubic SiC (JCPDS 01-075-0254), SiO2 (01-076-0933), and quartz (00-008-0415), respectively. Further samples developed using hydrothermal and solid-state methods show the cubic structure of SiC with JCPDS No. 01-073-1708. Fourier transform spectroscopy confirms the presence of Si-C, Si-C and Si-O bonds in the synthesized material. Raman analysis shows the transverse optical line of Si-C stretching mode in all three samples at 801 cm-1. Thermal analysis reveals that the sample prepared using the solid-state method is more stable due to negligible weight loss and less decomposition during thermal heat treatment. The microstructure of materials synthesized using the solid-state method has more porosity, and therefore, better electrical conductivity of 1.1 Scm-1 is obtained compared to other samples synthesized by the hydrothermal method and carbothermal reduction method, respectively. The cell reached the maximum power density of 100 mW cm-2 with an open circuit voltage of 1.1 V at 550 degrees C. This work demonstrates an innovative synthesis method for 3C-SiC and novel material for developing highly efficient anode materials of solid ceramic fuel cells.

sted, utgiver, år, opplag, sider
SPRINGER , 2025. Vol. 29, nr 5, s. 1777-1785
Emneord [en]
Cubic silicon carbide; Solid-state method; Conductivity; Stability; Phonon confinement
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Identifikatorer
URN: urn:nbn:se:liu:diva-209903DOI: 10.1007/s10008-024-06128-6ISI: 001348694500001Scopus ID: 2-s2.0-105002949668OAI: oai:DiVA.org:liu-209903DiVA, id: diva2:1914535
Merknad

Funding Agencies|Higher Education Commission of Pakistan [9889]; Swedish Research Council [2015-05876]

Tilgjengelig fra: 2024-11-19 Laget: 2024-11-19 Sist oppdatert: 2025-10-02bibliografisk kontrollert

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Syväjärvi, Mikael

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