We used optically detected cyclotron resonance (ODCR) at X-band frequency (similar to9.23 GHz) to study the hole effective masses in 6H-SiC. In high-purity 6H-SiC layers, two well-resolved cyclotron resonance (CR) peaks have been observed and attributed to the CR of electrons and holes. Similar to 4H-SiC, the hole effective mass in 6H polytype is also found to be isotropic in the basal plane with the transverse mass m(hperpendicular to)=(0.66+/-0.02) m(0). The hole effective mass component along the c-axis is determined as m(hparallel to)=(1.85+/-0.03) m(0). From the obtained data we can estimate the electron effective mass component along the c-axis to be in the range 3-6 m(0) depending on the anisotropy of the electron effective mass in the basal plane.