Spectroscopic ellipsometry has been employed in the study of wide band gap materials. Ellipsometry is based on the study of changes in the polarization state of light upon reflection on a surface. It is a non-destructive and sensitive tool that provides the possibility to obtain the dielectric properties as well as the morphology and thickness of the material studied. Techniques as spectroscopic ellipsometry and multi sample analysis enhances the possibilities to remove parameter correlation. This work is mainly directed to studies of silicon carbide, a wide band gap material of large scientific interest.

Wide band gap materials have optical and electrical properties that makes them suitable for very demanding electronic devices. By using ellipsometry over a large photon energy range and by studying samples cut in different crystallographic directions, the optical anisotropy of these samples were also studied. Finally a comparison with some recent theoretical calculations is presented.