Thin Bi films are interesting candidates for spintronic applications due to a large spin-orbit splitting that, combined with the loss of inversion symmetry at the surface, results in a band structure that is not spin-degenerate. In recent years, applications for topological insulators based on Bi and Bi alloys have as well attracted much attention. Here we present angle-resolved photoemission spectroscopy studies of the Bi/InAs(100) interface. Bismuth deposition followed by annealing of the surface results in the formation of one full Bi monolayer decorated by Bi nanolines. We found that the building up of the interface does not affect the electronic structure of the substrate. As a consequence of weak interaction, Bi states are placed in the gaps of the electronic structure of InAs(100). We observe a strong resonance of the Bi electronic states close to the Fermi level; its intensity depends on the photon energy and the photon polarization. These states show nearly no dispersion when measured perpendicular to the nanolines, confirming their one-dimensionality.