Herein, the complex pseudodielectric function of Ge and Si from femtosecond pump–probe spectroscopic ellipsometry with 267, 400, and 800 nm pump–pulse wavelengths is analyzed by fitting analytical lineshapes to the second derivatives of the pseudodielectric function with respect to energy. This yields the critical point parameters (threshold energy, lifetime broadening, amplitude, and excitonic phase angle) of E 1 and E 1 + Δ 1 in Ge and E 1 in Si as functions of delay time. Coherent longitudinal acoustic phonon oscillations with a period of about 11 ps are observed in the transient critical point parameters of Ge. From the amplitude of these oscillations, the laser-induced strain is found to be on the order of 0.03% for Ge measured with the 800 nm pump pulse, which is in reasonable agreement with the strain calculated from theory.