Carrier diffusion in the barrier enabling formation of charged excitons in InAs/GaAs quantum dotsVisa övriga samt affilieringar
2001 (Engelska)Ingår i: XXX International School on the Physics of Semiconducting Compounds,2001, Polish Academy of Sciences, Institute of Physics , 2001, Vol. 100, s. 387-395Konferensbidrag, Publicerat paper (Refereegranskat)
Abstract [en]
It is demonstrated that the photoluminescence spectra of single self-assembled quantum dots are very sensitive to the experimental conditions, such as excitation energy and crystal temperature. A qualitative explanation is given in terms of the effective diffusion of the photogenerated carriers, determined by the experimental conditions, which influence the capture probability and hence also the charge state of the quantum dots. This is proposed as a new tool to populate quantum dots with extra electrons in order to study phenomena involving charged excitons.
Ort, förlag, år, upplaga, sidor
Polish Academy of Sciences, Institute of Physics , 2001. Vol. 100, s. 387-395
Serie
Acta Physica Polonica A, ISSN 0587-4246, E-ISSN 1898-794X ; 3
Nationell ämneskategori
Naturvetenskap
Identifikatorer
URN: urn:nbn:se:liu:diva-44054Lokalt ID: 75490OAI: oai:DiVA.org:liu-44054DiVA, id: diva2:264915
Konferens
XXX International School on the Physics of Semiconducting Compounds, 1-8 June 2001, Jaszowiec, Poland
2009-10-102009-10-102018-02-19