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2017 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 421, p. 357-360Article in journal (Refereed) Published
Abstract [en]
Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmᅵᅵᅵ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmᅵᅵᅵ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
Place, publisher, year, edition, pages
Elsevier, 2017
Keywords
THz optical Hall effect, Epitaxial graphene, Free charge carrier properties
National Category
Physical Sciences Condensed Matter Physics Atom and Molecular Physics and Optics Ceramics and Powder Metallurgical Materials
Identifiers
urn:nbn:se:liu:diva-132407 (URN)10.1016/j.apsusc.2016.10.023 (DOI)000408756700015 ()2-s2.0-85005939271 (Scopus ID)
Note
Funding agencies: Swedish Research Council (VR) [2013-5580]; Swedish Governmental Agency for Innovation Systems (VINNOVA) under the VINNMER international qualification program [2011-03486, 2014-04712]; Swedish foundation for strategic research (SSF) [FFL12-0181, RIF14-055]
2016-11-092016-11-092025-05-16Bibliographically approved