Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiCShow others and affiliations
2020 (English)In: New Journal of Physics, E-ISSN 1367-2630, Vol. 22, no 10, article id 103051
Article in journal (Refereed) Published
Abstract [en]
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime T-1 of 2.4 s at 2 K.
Place, publisher, year, edition, pages
IOP PUBLISHING LTD , 2020. Vol. 22, no 10, article id 103051
Keywords [en]
semiconductor defects; quantum information; defect symmetries; spin– lattice interaction
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-171490DOI: 10.1088/1367-2630/abbf23ISI: 000583987900001OAI: oai:DiVA.org:liu-171490DiVA, id: diva2:1502323
Note
Funding Agencies|Zernike Institute BIS program; EU H2020 project QuanTELCO [862721]; Swedish Research CouncilSwedish Research Council [VR 2016-04068, VR 2016-05362]; Knut and AliceWallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]; Carl Tryggers Stiftelse for Vetenskaplig Forskning [CTS 15:339]
2020-11-192020-11-192024-01-17Bibliographically approved