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Surface ligand removal in atomic layer deposition of GaN using triethylgallium
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Chemistry. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-1452-4548
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2021 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 39, no 1, article id 012411Article in journal (Refereed) Published
Abstract [en]

Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 degrees C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse, a "B-pulse" between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increases when a B-pulse is added. We suggest that this can be explained by the removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of x-ray amorphous films.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2021. Vol. 39, no 1, article id 012411
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:liu:diva-173069DOI: 10.1116/6.0000752ISI: 000606527000001Scopus ID: 2-s2.0-85099506350OAI: oai:DiVA.org:liu-173069DiVA, id: diva2:1524248
Note

Funding Agencies|Swedish Foundation for Strategic Research through the project "Time-resolved low-temperature CVD for III-nitrides" [SSF-RMA 15-0018]; Knut and Alice Wallenberg Foundation through the project "Bridging the THz gap" [KAW 2013.0049]; Carl Trygger Foundation

Available from: 2021-02-01 Created: 2021-02-01 Last updated: 2021-12-29Bibliographically approved

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