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Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement
Minist Oil, Iraq.
Amirkabir Univ Technol, Iran.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Amirkabir Univ Technol, Iran.
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2023 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 200, article id 108544Article in journal (Refereed) Published
Abstract [en]

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is confirmed from deep depletion to accumulation and from linear to saturation, based on the numerical solution of the Schrodinger equation using Technology Computer Aided Design (TCAD) simulations. This represents an important stage toward AC small signal analysis of junctionless nanowire-based circuits.

Place, publisher, year, edition, pages
PERGAMON-ELSEVIER SCIENCE LTD , 2023. Vol. 200, article id 108544
Keywords [en]
Gate-all-around field effect transistors  (GAA-FET); Junctionless (JL) FETs; Nanowire FETs; Quantum well; Ultra-thin body silicon on insulator (UTBSOI); Transcapacitances
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-191170DOI: 10.1016/j.sse.2022.108544ISI: 000901098300004OAI: oai:DiVA.org:liu-191170DiVA, id: diva2:1729912
Available from: 2023-01-23 Created: 2023-01-23 Last updated: 2023-01-23

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