In-situ observation of hydrogen nanobubbles formation on graphene surface by AFM-SECM 2024 (English)In: Electrochimica Acta, ISSN 0013-4686, E-ISSN 1873-3859, Vol. 493, article id 144425Article in journal (Refereed) Published

Abstract [en]

Gas bubble evolution is an important phenomenon in many electrochemical processes and it is highly sensitive to the surface properties. Here we visualize the gas bubble dynamics on the surface of different graphene substrates during hydrogen evolution reaction (HER) using atomic force microscopy combined with scanning electrochemical microscopy. The low overpotential and low surface hydrophobicity of few-layer graphene formed on Cphase SiC causes the uniform distribution of hydrogen nanobubbles, which easily depart from the surface during the reaction. Conversely, the high overpotential and more hydrophobic surface of HOPG induces hydrogen bubbles to linger on the surface for an extended duration, leading to its accumulation and the subsequent formation of microbubbles. This in-situ nanoscale electrochemical mapping of hydrogen bubble dynamics provides new insight into electrocatalytic HER that occurs on non-metal electrodes.

Place, publisher, year, edition, pages

PERGAMON-ELSEVIER SCIENCE LTD , 2024. Vol. 493, article id 144425

Keywords [en]

Atomic force microscopy; Scanning electrochemical microscopy; Graphene; Hydrogen bubble; Hydrogen evolution reaction

National Category

Materials Chemistry

Identifiers

URN: urn:nbn:se:liu:diva-204905DOI: 10.1016/j.electacta.2024.144425ISI: 001241155500001OAI: oai:DiVA.org:liu-204905DiVA, id: diva2:1871583

Note

Funding Agencies|Ministry of Science and Technology [MOST 107-2113-M-001-010-MY3, MOST 111-2124-M-001-001, MOST 112-2112-M-131-003, MOST 111-2112-M-131-003]; National Science and Technology Council (NSTC) of Taiwan-Science Vanguard Project [NSTC 111-2123-M-002-009]; Academic Summit Project [NSTC 112-2639-M-002-005-ASP]; Academia Sinica [AS-SS-106-02-3]; I-MATE program in Academia Sinica; Center of Atomic Initiative for New Materials (AI-Mat) , National Taiwan University , from the Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan [111L9008, 112L9008]; JSPS KAKENHI Grant [JP19H05814, JP23H00301]; JST PRESTO Grant [JPMJPR2274]; Chang Gung University [URRPD2N0021]

Available from: 2024-06-17 Created: 2024-06-17 Last updated: 2024-06-17

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Yakimova, Rositsa

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Semiconductor MaterialsFaculty of Science & Engineering

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