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Lattice Mismatch-Driven In-Plane Strain Engineering for Enhanced Upper Critical Fields in Mo2N Superconducting Thin Films
Indian Inst Technol Mandi, India.
Indian Inst Technol Mandi, India.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0009-0006-4871-8734
Natl Inst Sci Educ & Res NISER, India.
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2025 (English)In: Advanced Materials Interfaces, ISSN 2196-7350, Vol. 12, no 22, article id e00586Article in journal (Refereed) Published
Abstract [en]

Transition metal nitrides are a fascinating class of hard coating material that provides an excellent platform for investigating superconductivity and fundamental electron-phonon (e-ph) interactions. In this work, the structural, morphological, and superconducting properties have been studied for Mo2N thin films deposited via direct current magnetron sputtering on c-plane Al2O3 and MgO substrates to elucidate the effect of internal strain on superconducting properties. High-resolution X-ray diffraction and time-of-flight elastic recoil detection analysis confirm the growth of single-phase Mo2N thin films exhibiting epitaxial growth with twin-domain structure. Low-temperature electrical transport measurements reveal superconducting transitions at approximate to 5.2 and approximate to 5.6 K with corresponding upper critical fields of approximate to 5 and approximate to 7 T for the films deposited on Al2O3 and MgO, respectively. These results indicate strong type-II superconductivity, and the observed differences in superconducting properties are attributed to substrate-induced strain, which leads to higher e-ph coupling for the film on MgO substrate. These findings highlight the tunability of superconducting properties in Mo2N films through strategic substrate selection.

Place, publisher, year, edition, pages
WILEY , 2025. Vol. 12, no 22, article id e00586
Keywords [en]
DC magnetron sputtering; molybdenum nitride; strain engineering; superconductivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-218165DOI: 10.1002/admi.202500586ISI: 001570588600001Scopus ID: 2-s2.0-105016239534OAI: oai:DiVA.org:liu-218165DiVA, id: diva2:2002550
Note

Funding Agencies|Knut och Alice Wallenbergs Stiftelse

Available from: 2025-10-01 Created: 2025-10-01 Last updated: 2026-02-12Bibliographically approved

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Hjort, VictorEklund, Per

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