Open this publication in new window or tab >>Show others...
2005 (English)In: Organic electronics, ISSN 1566-1199, E-ISSN 1878-5530, Vol. 6, no 1, p. 21-33Article in journal (Refereed) Published
Abstract [en]
A set of polyaniline- and poly(3,4-ethylene dioxythiophene)-based materials were studied as hole injection layers in polymer light emitting devices. The choice of polymeric counterion/dopant poly(styrenesulfonic acid), and poly(acrylamido-2-methyl-1-propanesulfonic acid), and poly(acrylamide) blended with polyaniline/poly(acrylamido-2-methyl-1-propanesulfonic acid) was found to influence both work function and film morphology, which in turn affects device performance. The work functions of the polymer films spanned the range of over 1 eV and the surface region of the films were found to be low in conducting polymer content compared to the bulk. This was particularly the case of the polyaniline/poly(acrylamido-2-methyl-1-propanesulfonic acid) blended with poly(acrylamide) which showed device efficiency equal to that of the poly(3,4-ethylene dioxythiophene)–poly(styrenesulfonic acid) reference. The turn on voltage, however, was significantly larger, likely due to the insulating poly(acrylamide)-rich surface region of the polyaniline/poly(acrylamido-2-methyl-1-propanesulfonic acid)/poly(acrylamide) film. The polymer blend of polyaniline/poly(styrenesulfonic acid) yielded the highest work function (5.5 ± 0.1 eV).
National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-32255 (URN)10.1016/j.orgel.2005.02.001 (DOI)18135 (Local ID)18135 (Archive number)18135 (OAI)
2009-10-092009-10-092017-12-13