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Free electron properties and hydrogen in InN grown by MOVPE
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-8112-7411
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Ruhr-Universität Bochum, Bochum, Germany.
Ruhr-Universität Bochum, Bochum, Germany.
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2011 (English)In: Physica Status Solidi (A): Applications and Materials Science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 208, no 5, p. 1179-1182Article in journal (Refereed) Published
Abstract [en]

In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state-of-the-art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n-type doping in MOVPE InN.
Place, publisher, year, edition, pages
WILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA , 2011. Vol. 208, no 5, p. 1179-1182
Keywords [en]
free electron properties, hydrogen, InN, unintentional doping
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-68781DOI: 10.1002/pssa.201001151ISI: 000290630200030OAI: oai:DiVA.org:liu-68781DiVA, id: diva2:421196
Available from: 2011-06-08 Created: 2011-06-07 Last updated: 2025-12-01

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Darakchieva, VanyaXie, Mengyao

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