liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Electrical and optical control of single spins integrated in scalable semiconductor devices
Univ Chicago, IL 60637 USA.
Univ Chicago, IL 60637 USA.
Univ Chicago, IL 60637 USA.
Univ Chicago, IL 60637 USA.
Show others and affiliations
2019 (English)In: Science, ISSN 0036-8075, E-ISSN 1095-9203, Vol. 366, no 6470, p. 1225-+Article in journal (Refereed) Published
Abstract [en]

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

Place, publisher, year, edition, pages
AMER ASSOC ADVANCEMENT SCIENCE , 2019. Vol. 366, no 6470, p. 1225-+
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-163035DOI: 10.1126/science.aax9406ISI: 000502662500053PubMedID: 31806809OAI: oai:DiVA.org:liu-163035DiVA, id: diva2:1384257
Note

Funding Agencies|NSFNational Science Foundation (NSF) [DMR-1420709]; SHyNE, a node of the NSFs National Nanotechnology Coordinated Infrastructure [NSF ECCS-1542205]; AFOSRUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-14-1-0231, FA9550-15-1-0029]; DARPAUnited States Department of DefenseDefense Advanced Research Projects Agency (DARPA) [D18AC00015KK1932]; NSF EFRINational Science Foundation (NSF) [EFMA-1641099]; ONROffice of Naval Research [N00014-17-1-3026]; Department of Defense through the NDSEG ProgramUnited States Department of Defense; KAKENHIMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of ScienceGrants-in-Aid for Scientific Research (KAKENHI) [17H01056, 18H03770]; Swedish Energy AgencySwedish Energy Agency [43611-1]; Swedish Research CouncilSwedish Research Council [VR 2016-04068]; Carl Tryggers Stiftelse [CTS 15:339]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW 2018.0071]

Available from: 2020-01-09 Created: 2020-01-09 Last updated: 2020-01-09

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textPubMed

Search in DiVA

By author/editor
Ul-Hassan, JawadNguyen, Son Tien
By organisation
Semiconductor MaterialsFaculty of Science & Engineering
In the same journal
Science
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
pubmed
urn-nbn

Altmetric score

doi
pubmed
urn-nbn
Total: 355 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf