GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.
Funding Agencies|KAKENHIMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of ScienceGrants-in-Aid for Scientific Research (KAKENHI) [16H05970, 19H00855, 21KK0068]; Japan Society of Promotion of ScienceMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science; Royal Academy of Engineering under the Research Fellowships scheme; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2019-04312]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]