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Assesment of a model to calculate the refractive index of AlXGa1-XN epilayers using the multi-oscillator model simulation of the infrared reflectance
Nelson Mandela Univ NMU, South Africa; NMU, South Africa.
Nelson Mandela Univ NMU, South Africa; NMU, South Africa.
NMU, South Africa.
Nelson Mandela Univ NMU, South Africa.
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2022 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 625, article id 413484Article in journal (Refereed) Published
Abstract [en]

A formula for the calculation of the refractive index of AlXGa1-XN in the infrared region has previously been proposed. In this paper, the validity of the proposed model is assessed against the multi-oscillator model which simulates the infrared reflectance of AlXGa1-XN epilayers. Acceptable agreement was found between the two models for wavenumbers greater than 3500 cm(-1). Additional validation for the earlier proposed formula is obtained by the calculation of epilayer thicknesses of AlXGa1-XN samples in the infrared region.

Place, publisher, year, edition, pages
ELSEVIER , 2022. Vol. 625, article id 413484
Keywords [en]
AlxGa1-xN; Refractive index; Infrared reflectance; Multi-oscillator model
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URN: urn:nbn:se:liu:diva-181453DOI: 10.1016/j.physb.2021.413484ISI: 000719850200012OAI: oai:DiVA.org:liu-181453DiVA, id: diva2:1615023
Note

Funding Agencies|National Research Foundation (NRF) , South AfricaNational Research Foundation - South Africa

Available from: 2021-11-29 Created: 2021-11-29 Last updated: 2021-11-29

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Thin Film PhysicsFaculty of Science & Engineering
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