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Spectroscopic studies of doped GaAs/ AlGaAs quantum wells in the high carrier density regime
Linköping University, Department of Physics, Measurement Technology, Biology and Chemistry. Linköping University, The Institute of Technology.
2000 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis is mainly based on experimental and theoretical investigations of the electronic structures and optical properties of p-type doped GaAs/AlGaAs quantum wells using a combination of photoluminescence and magneto-optical spectroscopy in the presence of high magnetic fields.

The effects of high hole densities up to 3.1 x1012 cm-2 on the optical spectra have been systematically explored for modulation-doped quantum wells. Several novel aspects related to many-body effects have been observed: Firstly, there is a significant red shift observed for the main photoluminescence emission due to band-gap renormalization effect (BGR). Theoretical calculations based on the Hartree self-consistent and the random-phase approximation (RPA) taking into account the finite-well width effect have been established to describe the band-gap renormalization. Secondly, excitons associated with unoccupied bands are found to survive up to a hole density of 2 x 1012 cm-2, i.e. well above the degenerate level. Finally, a novel recombination with light-hole character appears at the Fermi-edge at higher hole concentrations. This transition associated with the light-hole bandtail supported by related theoretical prediction of the luminescence line shape, is the basis for the interpretation of the Fermi-edge emission.

In optical spectra in the presence of a magnetic field, magneto-excitons are observed weakly in low doped samples and are replaced by Landau-level transition at high hole concentrations. The Landau-level formation is complicated by the effect of the valence-band mixing and is smeared out at high-hole densities. The predicted Landau-level formations based on self-consistent calculations taking into account the valence-band mixing, the conduction-band nonparabolicity, and the phase-space filling effect have been employed. The agreement achieved for the experimental results and theoretical predictions results in a more accurate determination of band-to-band transition energies and band-gap renormalization effect from different subbands. Theoretical calculations for the multiple-subband renormalization have been subsequently performed. A theoretical model for the multiple-subband renormalization taking into account the inter- and intrasub bandprocesses and the valence-band mixing provides a good agreement with the experimental results.

The effect of an AlAs monolayer inserted in n-type highly modulation-doped quantum wells on the optical and transport properties has been investigated. The interband Landau-level transition energies were compared with the results of theoretical calculations based on simple self-consistent calculations. Finally, studies of an acceptor confined in a quantum well have been presented. Satellite spectra associated with an acceptor bound exciton were observed. The satellite spectra also in the presence of a magnetic field have been reported, the experimental results have been compared with theoretical calculations and provided essential information for the electronic structure of the confined acceptor.

Place, publisher, year, edition, pages
Linköping: Linköping University , 2000. , p. 50
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 658
National Category
Condensed Matter Physics Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-186057Libris ID: 7624674ISBN: 9172198869 (print)OAI: oai:DiVA.org:liu-186057DiVA, id: diva2:1671492
Public defence
2000-12-18, J206 (Planck), Fysikhuset, Linköpings universitet, Linköping, 11:18
Opponent
Note

All or some of the partial works included in the dissertation are not registered in DIVA and therefore not linked in this post.

Available from: 2022-06-17 Created: 2022-06-17 Last updated: 2022-06-17Bibliographically approved
List of papers
1. Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
Open this publication in new window or tab >>Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 4, p. 2794-2798Article in journal (Refereed) Published
Abstract [en]

Many-body effects have been optically investigated for modulation-doped quantum wells at high acceptor densities. The observed band-gap shrinkage, up to approximate to 20 meV, is consistent with calculations based on the Hartree and random-phase approximations including the finite well width effect. A recombination near the Fermi edge with light-hole character is strikingly enhanced at high acceptor densities. An interpretation based on carrier-carrier interaction is proposed. Finally, the exciton is found to be quenched for hole densities higher than approximate to 2x10(12) cm(-2).

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-49848 (URN)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2022-06-17
2. Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures
Open this publication in new window or tab >>Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 16, p. 10984-10989Article in journal (Refereed) Published
Abstract [en]

Symmetrically modulation doped GaAs/AlxGa1-xAs quantum-well structures, containing a monolayer thickness of single AlAs insertion in the well region, are studied by photoluminescence spectroscopy and electrical characterization. The aim of this study is to explore how the AlAs insertion influences the electronic properties of the structures and the mobility of the carrier confined in the well layer. We find that the electronic structure of the confined electrons is strongly influenced by the AlAs insertion in the modulation doped structures. The effective mass of the particles involved in the observed optical transition and the transition energy were deduced from magneto-optical measurements, while the mobility and carrier concentration were, obtained from the Hall measurements. The experimentally deduced transition energies are compared with the results from a simple self-consistent calculation.

National Category
Engineering and Technology
Identifiers
urn:nbn:se:liu:diva-49547 (URN)10.1103/PhysRevB.62.10984 (DOI)
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2022-06-17

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