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Capacitance Measurement for Evaluating the Initial Top-Electrode-Damage-Induced Degradation of Organic Devices
Fudan Univ, Peoples R China.
Fudan Univ, Peoples R China.
Heidelberg Univ, Germany.
Fudan Univ, Peoples R China.
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2024 (English)In: ACS Materials Letters, E-ISSN 2639-4979, Vol. 6, no 9, p. 4090-4097Article in journal (Refereed) Published
Abstract [en]

The formation of bubbles and fractures on the top electrode surface is one of the key factors that leads to the degradation of organic devices. This degradation can be directly observed through optical microscopy but only in low spatial resolution of several micrometers due to limited optical contrast between the bubbles and their surroundings. Here, we present a nonintrusive capacitance method to characterize electrode damage with improved accuracy and testing efficiency. For serious degradation with a large damage area at the top electrode (almost more than 10 mu m), the relative drop in capacitance after degradation is consistent with the results derived by optical microscopy. For initial degradation with a damage area below the resolution of optical microscopy (even less than 1 mu m), our proposed capacitance method still works well, which is validated by atomic force microscopy results.

Place, publisher, year, edition, pages
AMER CHEMICAL SOC , 2024. Vol. 6, no 9, p. 4090-4097
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URN: urn:nbn:se:liu:diva-207200DOI: 10.1021/acsmaterialslett.4c01103ISI: 001285545900001OAI: oai:DiVA.org:liu-207200DiVA, id: diva2:1895015
Note

Funding Agencies|National Natural Science Foundation of China [12074076, 11874007]; Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Available from: 2024-09-04 Created: 2024-09-04 Last updated: 2024-11-26Bibliographically approved

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Qin, Jiajun

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