This study demonstrates a metal-semiconductor-metal (MSM) type photodetector based on 50 nm amorphous Ga2O3 film using the atomic layer deposition (ALD) technique that can provides effective detections at both solar-blind and X-ray lights. The detector exhibits stable performances at high temperature ( 150 degrees C) in the air, characterized by a low dark current (<0.1 nA), high photo-to-dark current ratio ( >10(5)), and fast responses (rising/decaying times of 0.53/0.13 s), respectively. Meanwhile, the detector shows the high sensitivity ( 952 mu C Gy (-1)(air) cm (-2) and ultra-low detection limit (11.23 nGy(air)s (-1) )in X-ray detection, which is among the highest values reported in Ga2O3 thin film photodevices to the best of authors' knowledge. The superior capabilities can be ascribed to the restricted oxygen vacancies during the ALD process. These results indicate that the Ga2O3-based detector has great potential for applications in security system and irradiation exploration in harsh environments.