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SnSb monolayer: A promising 2D candidate for high sensitivity NO2 gas sensing
Lang Univ, Vietnam.
Lang Univ, Vietnam.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0003-3026-9839
108 Mil Cent Hosp, Vietnam.
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2025 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 190, article id 109318Article in journal (Refereed) Published
Abstract [en]

Data regarding the adsorption-sensing characteristics of two-dimensional (2D) materials are crucial for guiding their design and use in gas sensors. XSb (X = Si, Ge, Sn) are novel 2D materials anticipated to exhibit thermodynamic stability and have the potential for experimental production. Nevertheless, the adsorption- sensing characteristics of XSb (X = Si, Ge, Sn) monolayers have not been thoroughly examined until now. This study employs density functional theory (DFT) and non-equilibrium Green's Function (NEGF) approaches to systematically investigate the structural, electrical, and adsorption-sensing properties of XSb (X = Si, Ge, Sn) monolayers for gas molecules H2O, CO, SO2, and NO2. This work provides a novel analysis of the adsorption- sensing characteristics of 2D XSb (X = Si, Ge, Sn) materials and offers recommendations for developing NO2 gas sensors utilizing these materials. Specifically, our findings suggest that the SnSb monolayer is a promising 2D sensor material for detecting NO2 gas with high sensitivity.

Place, publisher, year, edition, pages
ELSEVIER SCI LTD , 2025. Vol. 190, article id 109318
Keywords [en]
2D IV-V; DFT calculations; NEGF formalism; Adsorption; Sensitivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-212281DOI: 10.1016/j.mssp.2025.109318ISI: 001434256400001Scopus ID: 2-s2.0-85216485427OAI: oai:DiVA.org:liu-212281DiVA, id: diva2:1945189
Available from: 2025-03-18 Created: 2025-03-18 Last updated: 2025-03-18

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