In this study, the spindle-like Sn-doped gallium oxide ((3-Ga2O3) nanorods (NRs) were successfully synthesized by using a novel approach within the framework of the existing chemical bath deposition (CBD) method, It features a high aspect ratio with an average height of approximately 850 nm and is vertically grown on a sapphire substrate. Precise stoichiometric calculations and subsequent comparisons of calcination in various atmospheres were employed. Our analyses indicated that lattice oxygen (OL) and oxygen vacancies (OV) play crucial roles in the NRs films, aiding in exceptional gas adsorption and desorption, as well as rapid electron transfer capabilities, thereby enhancing sensor performance. The (3-Ga2O3 (Sn) NRs film was fabricated into a metal oxide semiconductor (MOS) gas sensors, demonstrating excellent response times to nitric oxide (NO) gas within 2 s, efficient recovery times of 4 s, and a low detection limit of 30 ppb. Consequently, this process produced (3-Ga2O3 crystalline NRs with superior properties, leading to high gas-sensing performance. The rapid and continuous detection of trace concentrations of NO gas (ppb level) presents a significant challenge. Consequently, MOS gas sensor with ultra response, sharp response and recovery times are central roles in medical diagnostics and environmental monitoring-related applications.