Herein, it is shown that a fully vertical GaN FinFET can reach close to ideal Baliga's figure of merit (BFOM) for thicker drift layers. Devices with drift layers between 1 and 8 mu m are simulated using TCAD, and the device geometry is varied to find optimal device performance. For 8 mu m drift layers, device operation at the BFOM limit is found with VB = 1550 V and Ron,sp = 0.53 m Omega cm2. An optimal switching FOM at 2.36 nOC is found.
Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA) [2022-03139]; Lund University; Linkoeping University; Chalmers University of Technology; Hitachi Energy; Ericsson; Epiluvac; FMV; Gotmic; Region Skane; Saab; SweGaN; Volvo Cars; UMS; Austrian Federal Ministry for Digital and Economic Affairs; National Foundation for Research, Technology and Development; Christian Doppler Research Association