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Internal structure of free excitons in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2001 (English)In: Physica Status Solidi (B): Basic Solid State Physics, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 228, no 2, p. 467-470Article in journal (Refereed) Published
Abstract [en]

Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
Place, publisher, year, edition, pages
2001. Vol. 228, no 2, p. 467-470
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Natural Sciences
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URN: urn:nbn:se:liu:diva-40139DOI: 10.1002/1521-3951(200111)228:2<467::AID-PSSB467>3.0.CO;2-2Local ID: 52396OAI: oai:DiVA.org:liu-40139DiVA, id: diva2:260988
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2025-08-28

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Paskov, PlamenPaskova, TanjaHoltz, Per-OlofMonemar, Bo

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The Institute of TechnologyMaterials Science Department of Physics, Chemistry and Biology
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