Soft Error Rate Increase for New Generations of SRAMs 2003 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 50, no 6 I, p. 2065-2068Conference paper, Published paper (Other academic)

Abstract [en]

We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.

Place, publisher, year, edition, pages

2003. Vol. 50, no 6 I, p. 2065-2068

Keywords [en]

Aircraft electronics, CMOS memory integrated circuits, Neutron radiation effects, Radiation effects, Semiconductor device radiation effects, Semiconductor device testing, SRAM chips

National Category

Natural Sciences

Identifiers

URN: urn:nbn:se:liu:diva-46417DOI: 10.1109/TNS.2003.821593OAI: oai:DiVA.org:liu-46417DiVA, id: diva2:267313

Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

In the same journal

IEEE Transactions on Nuclear Science

On the subject

Natural Sciences

Search outside of DiVA

GoogleGoogle ScholarTotal: 278 hits