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Growth and characterization of epitaxial wurtzite Al1-xInxN thin films deposited by UHV reactive dual DC magnetron sputtering
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
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2002 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-4, p. 987-990Article in journal (Refereed) Published
Abstract [en]

Ternary Al1-xInxN thin films were grown by dual target direct current (DC) reactive magnetron sputtering under UHV conditions. The film compositions were determined to range from 0.30

Place, publisher, year, edition, pages
2002. Vol. 433-4, p. 987-990
Keywords [en]
AlN, AllnN, cathodoluminescence, epitaxial growth, HREM, InN, magnetron sputtering, thin films, XRD
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-48568OAI: oai:DiVA.org:liu-48568DiVA, id: diva2:269464
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2021-12-29

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Seppänen, TimoTungasmita, SukkanesteHultman, LarsBirch, Jens

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Seppänen, TimoTungasmita, SukkanesteHultman, LarsBirch, Jens
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The Institute of TechnologyThin Film PhysicsDepartment of Physics, Chemistry and Biology
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